CN102683538A - 发光二极管封装和制造方法 - Google Patents

发光二极管封装和制造方法 Download PDF

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CN102683538A
CN102683538A CN2012100574276A CN201210057427A CN102683538A CN 102683538 A CN102683538 A CN 102683538A CN 2012100574276 A CN2012100574276 A CN 2012100574276A CN 201210057427 A CN201210057427 A CN 201210057427A CN 102683538 A CN102683538 A CN 102683538A
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CN102683538B (zh
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M·马格利特
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Led Chip Solutions Co ltd
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Abstract

公开了发光二极管(LED)器件和发光二极管器件的封装。在一些方面，使用包括多个层的垂直构造来制造LED。某些层用于提升器件的机械特性、电特性、热特性或光学特性。所述器件避免了一些设计问题，包括传统LED器件中存在的制造复杂、成本和散热问题。一些实施方案包括多个光学许可层，包括堆叠在半导体LED上方并且使用一个或更多个对准标记定位的光学许可覆盖衬底或晶片。

Description

发光二极管封装和制造方法
技术领域
本申请涉及发光二极管(LED)器件，该LED器件实现在晶片覆盖层上并且提供有允许有效并可重复地制造该LED器件的特征。
相关申请
本申请涉及并要求同时在2011年3月6日提交的美国临时申请No.61/449,685和No.61/449,686的权益和优先权，这两个申请以引用方式被并入本文。
背景技术
发光二极管(LED)是一种半导体器件，其被构造用于接收电力或刺激并且用于通常在可见光谱(光)范围内输出电磁辐射。LED的一些部分含有掺杂的半导体材料，这些掺杂的半导体材料以这种方式工作来使电荷复合，从而从LED材料的本体释放所述光能。这种效应有时被称作电致发光。输出的能量或光由LED的材料和工作条件(包括LED材料的能带隙和LED的电偏置)来限定。
发光二极管(LED)与其他光源相比是有利的，并且尤其可用于某些应用和市场。例如，LED照明通常在能效、紧凑性、坚固且长期寿命设计和形状因子以及其他特征方面提供了益处。与光源耗费的红外或热能相比，在可见电磁波谱中产生的光能的量方面，LED照明相比其他光源是有利的。另外，当与其他灯形式相比时，LED灯包括对环境损害更少的组件，因此更好地适应危害物质限制(RohS)法规。
也就是说，当与其他光源相比时，根据某些量度，传统LED器件的制造成本会相对较高。一个原因在于，对于制造LED，需要精确的封装。LED封装要求合适的清洁条件、与其他半导体制造操作类似的微细加工设施、密封要求、光学要求、LED应用中使用荧光体以及被设计用于操纵器件所产生的热的传导的封装。
传统的LED封装包括晶片级组件技术中使用的硅(Si)基衬底。然而，这些传统技术需要使用载体芯片来支撑LED，这样会使LED器件的制造和封装成本加倍。另外，载体芯片大大增加了器件的热阻率并且对其散热特性产生不利影响。
因此，存在对这样的LED器件的需求，即所述LED器件不遭受以上问题中的一些或全部。
发明内容
公开了发光二极管(LED)器件和发光二极管器件的封装。在一些方面，使用包括多个层的垂直构造来制造LED。某些层用于提升器件的机械特性、电特性、热特性或光学特性。所述器件避免了一些设计问题，包括传统LED器件中存在的制造复杂、成本和散热问题。一些实施方案包括多个光学许可层(permissive layer)，包括堆叠在半导体LED上方并且使用一个或更多个对准标记定位的光学许可覆盖衬底或晶片。
一些实施方案涉及一种发光器件，所述发光器件包括：半导体LED，其包括掺杂区和本征区，所述半导体LED的第一表面用在所述第一表面的至少一部分上方的导电金属化层来金属化；光学许可层，其靠近所述半导体LED的第二表面，所述半导体LED的所述第一表面和所述第二表面位于所述半导体LED的相对的面上；光学可限定材料，其靠近所述光学许可层或者位于所述光学许可层内，影响穿过所述光学许可层的发射光的光学特性；以及光学许可覆盖衬底(cover substrate)，其覆盖以上组件中的至少一部分。
其他实施方案涉及在制造环境下在晶片上制成这种发光器件或器件组的方式。具体来讲，实施方案涉及一种制造发光器件的方法，所述方法包括：在设置在光学许可层上的发光器件(LED)中，形成多个掺杂层；在所述LED中形成凹陷，以在所述LED的第一掺杂层的深度处允许与所述LED的所述第一掺杂层电接触；将所述LED的面的至少一部分金属化以形成金属化层，提供与靠近所述LED的所述面的所述LED的所述第一掺杂层和第二掺杂层的电接触；以及使用光学许可粘合剂，以机械方式将所述光学许可层固定于光学许可覆盖衬底。
附图说明
为了更充分地理解本发明构思的性质和优点，参考以下对优选实施方案的详细说明并且结合附图，在附图中：
图1图示说明根据现有技术的蓝宝石层上方的半导体LED层；
图2图示说明根据现有技术的蓝宝石层上的半导体LED层的一部分中蚀刻形成腔体；
图3图示说明根据一些方面的LED器件的金属化过程；
图4图示说明示例性LED器件的俯视图；
图5图示说明另一个示例性LED器件的剖视图；
图6图示说明LED器件60的俯视图；
图7图示说明LED器件的另一个示例性剖视图；
图8图示说明包括钝化层的示例性LED器件；
图9图示说明具有一定形状的、可选地为镜面化或金属化钝化层的示例性LED器件；
图10图示说明另一个示例性LED器件；
图11图示说明LED器件的又一个实施方案；以及
图12图示说明如何能在单个制造平台或晶片上制造不止一个LED器件。
具体实施方式
现代LED器件基于半导体材料及其特性。例如，使用氮化镓(GaN)制成某些LED，GaN是适于高功率LED使用的一种带隙半导体。GaN LED通常外延生长在蓝宝石衬底上。这些LED包括P-I-N结器件，该器件具有位于N型掺杂层和P型掺杂层之间的本征(I)层。通过与LED的N型和P型部分耦合的电极或触点，使用合适的电驱动信号来驱动所述器件。根据施加到器件的电动势和器件的构造，电子活动造成从器件的本征部分发射可见电磁辐射(光)。
图1图示说明如上所述的LED器件10，该LED器件10在蓝宝石层110上设置有GaN层100(通常称为LED)。通常使用一些半导体微细加工技术来处理图1的器件。在一些实施例中，使用本领域技术人员已知的技术，蚀刻掉或去除LED(GaN层)中的一些部分。导电和非导电层的其他应用方式连同用于各种功能的沟道和通孔(如以下将描述的)一起应用于这种基础设计。
图2图示说明如同图1所示LED器件的LED器件20，其中，GaN层200设置在蓝宝石层210上方。在GaN层200的一部分中蚀刻形成凹陷或凹槽或沟道202。
应该理解的是，GaN型LED不是在本讨论中可采用的唯一一种LED材料，但是本说明只是示例性的，使得本领域的技术人员可以意识到一些优选实施方案以及制造和设计本LED的方法。类似地，在以下优选和示例性的实例中，要理解，许多其他类似和等同的实施方案对于本领域的技术人员将是清楚的并且将实现基本相同的结果。这就本发明实施例中描述的几何形状、布局、构造、尺寸和对材料的选择以及其他方面的变形形式来讲是正确的。具体来讲，可以省略所描述的某些元件和步骤，或者，可以将其他元件作为本文出于图示说明的缘故所描述的元件的替代或补充，而不会实质上影响本公开和发明的范围。
图3图示说明使用将适合的金属层320施用于LED器件30的一些部分的步骤将图2中器件的GaN层300的表面金属化的结果。在此，如之前的，GaN层300设置在蓝宝石层310上。在实施方案中，GaN层300包括其内具有分层的P-I-N结，该P-I-N结包括：P型掺杂层301，其靠近GaN层300的体表面并且远离蓝宝石层310；N型掺杂层303，在GaN层300内，靠近蓝宝石层310；以及本征(I)半导体层305，其位于P型层301和N型层303之间的中间位置。在操作中，P型层301对N型层303的电偏置造成从本征层305发射光子。
如之前所提及的，在GaN层300表面的一部分中，蚀刻形成凹陷302。凹陷302的深度可以是浅或深的，并且与GaN层300和其内的P-I-N分层的厚度相适应。
此外，向GaN层300表面的至少一部分，施用金属化层320。金属化层320可以延伸来覆盖GaN层300的体表面以及在GaN层300的本体中蚀刻形成凹陷302之后变成暴露于凹陷302中的区域。
在实施方案中，所形成的凹陷302足够深，以允许电连接件与N型层303之间的接触，从而驱动LED。以此方式，可以向N型层303和P型层301应用一组触点，用于驱动或激发LED器件30。因此，电流可以通常从与N型层303耦合的导电电极流向与P型层301耦合的另一个导电电极。所述金属可以是Al、Au、Ag、Cu或其他导电金属。在实施方案中，顶部触点覆盖如图3和图4所示的LED的基本上全部未蚀刻部分。在另一个实施方案中，金属被设计成具有接触焊盘，其中所述金属具有大于100微米×100微米的基本上连续区域的区域。
图4图示说明示例性LED器件40的俯视图。剖面线420基本上对应于图3所示的侧视图。底部金属焊盘面积限定组装LED和创建电触点时的对准公差。因此，在一个实施方案中，教导的是，通过将焊盘尺寸增大为150微米×150微米来放宽所需公差。金属的厚度可以是0.5-2微米，但是本实施例不是以限制方式给出的。
图5图示说明示例性LED器件50的剖视图。器件50包括如以上讨论的所述LED半导体层(一层或多层)500，连同经蚀刻的凹陷502和金属化区域520。如之前的，LED(例如，GaN)层500设置在蓝宝石层510上。
在此，将光学透明或透射性粘合层530放置成倚靠蓝宝石层510与LED材料500相对的那侧，这意味着，蓝宝石层510的一面靠近LED材料层500而蓝宝石层510的另一个相对面靠近透明粘合层530。透明粘合层530可以由有机硅或某种其他合适的光可限定材料组成，所述有机硅或某种其他合适的光可限定材料可以提供粘合或环氧树脂的质量，以结合或用机械方式耦合LED器件50的元件。
在透明粘合剂层530内部或接壤透明粘合剂层530的是含有荧光体和/或量子点材料(QD)535的区域。在操作中，从LED层500发射的光子穿过所述蓝宝石层510并且经过光学透明层530以及含有荧光体和/或量子点535的区域。如本文进一步描述的，这造成颜色(波长)得以控制并且发射从LED器件输出的选择性的所需光。
一个、两个或更多个对准标记540设置在透明粘合层530上或设置在透明粘合层530中，并且用于在制造过程中将LED主体对准在覆盖衬底550片上方并且大体对准在伸展的晶片结构中。覆盖衬底550提供LED器件50的元件的结构性状态和机械耦合。对于LED层500发射的波长范围内的光而言，覆盖衬底550也是透明或光学透射性的。
在一些实施方案中，可以将光学透镜560放置在覆盖衬底550上，使其大体位于器件50的LED发光部分的主体上方。透镜560可以用于传播、漫射、准直或者以其他方式重新引导并形成LED的输出。
图6图示说明LED器件60的俯视图。该器件基本上包括以上关于图5描述的元件，包括布置在图案化覆盖衬底610上的LED发光主体600和定位或对准标记640、透镜660。在实施方案中，相对于所述对准标记定位LED。在晶片上的相邻LED之间，存在(例如)50微米的间隔，以便随后对LED进行处理和切片。
将各个LED组装到载体晶片上，使蓝宝石层面对载体晶片层。载体晶片层具有如上所述的光学透明材料，如玻璃或塑料。所述覆盖(cover)可以包括其他光学组件，如透镜或光漫射结构或光引导结构。如所提及的，光子或量子点层使LED产生的光能够转换成其他颜色。最常用的是利用荧光体来使蓝色LED能够发射白光。在一个实施方案中，透镜形状由聚合物或有机硅材料液滴的表面张力来创建。在另一个实施方案中，通过对施用到载体晶片一侧的聚合物进行热压印来创建透镜。可以进一步地将载体晶片图案化，以创建特定液滴形状、尺寸和所要求的表面质量。
图7图示说明LED器件70的另一个示例性剖视图。在载体晶片上创建支座结构737，支座结构737由合适的能提供机械支撑的材料制成。支座结构737可以包括热塑性材料并且通过压印或注塑成型来创建，或者可以通过施用光可限定材料(如聚酰胺(polymide)或焊接掩模)的层并且使用合适的掩模将材料曝光来制成支座结构。支座结构737可以用于包围QD或荧光体材料735，或者可替换地提供用于材料沉积的腔体。
图8图示说明与上述器件类似的LED器件80。在此，已施用钝化层870，使其环绕器件的中心部分，位于LED半导体层800、金属化层820和蓝宝石层810周围。钝化层870可以包括非导电层并且可以由SiO2、SiN、AlN、Al2O3或有机材料如环氧树脂或电泳沉积涂料(如在汽车工业中使用的)构成，或者可以通过喷涂形成。在一个实施方案中，根据材料和所要求的电钝化水平，钝化层870的厚度范围是1微米至40微米。在实施方案中，在制造期间，钝化层870以共形的方式覆盖LED之间的间隔。在另一个实施方案中，LED之间的间隔未被覆盖，或者可供选择地，在机械加工(如，切片)的过程中被暴露。LED器件80的其他元件类似于上述以类似方式标号的元件。
图9图示说明具有一定形状、可选为镜面化或金属化钝化层970的示例性LED器件90，以增强器件性能。可以以这样的方式将二极管侧的钝化层图案化，以通过使钝化层970的边缘975成角度或成形来提供(例如)光学反射性。可以使用采用特定刀片的机械切片系统或者借助化学蚀刻，将钝化层970图案化。在一个实施方案中，优选地，用诸如SiN或AlN的导热层来使LED器件封装的热导率最小化。LED器件90的其他元件类似于上述以类似方式标号的元件。
图10图示说明另一个示例性LED器件1001。之前讨论的以类似方式标号的元件与本实施方案中的那些元件相同或类似。在此，在一个实施方案中，使用激光，钻穿钝化层直至到达金属焊盘和硅衬底，形成接触孔。如果使用的是SiN或SiO2，则还可以使用等离子体蚀刻来创建接触孔。如果使用的是激光，则激光可以止于金属焊盘(盲孔)或穿透金属焊盘并且随后将会利用焊盘厚度来进行电连接。
注意的是，如上所述，切割或蚀刻掉钝化层1075，从而至少为靠近激光钻孔的凹陷1072的N型半导体和靠近金属化层1020的部分1074的P型半导体提供导电通路。
图11图示说明LED器件1101的又一个实施方案。在此，将金属晶种层1177施用于钝化层1170。金属晶种层1077可以由钛、铬、镍、钯、铂、铜或其组合物中的任一种构成。通过在初始晶种层上方使用溅射，可以加厚晶种层。在一个实施方案中，使用电泳沉积得到的光致抗蚀剂、喷涂抗蚀剂或厚层抗蚀剂(在一个实施方案中，大于50微米)，将晶种层图案化。抗蚀剂被图案化来创建电走线(electrical routing)连接和凸点下金属化(UBM)。在将抗蚀剂图案化之后，镀上具有限定图案的厚金属层(在一个优选实施方案中，10微米至40微米)。在一个非限制性实施方案中，通过使用湿金属蚀刻，去除抗蚀剂并且蚀刻裸晶种层。在一个实施方案中，施用焊接掩模以形成这种层。在操作中，层1177提供外部电组件和器件的金属化层或导电焊盘之间的增强的导电性。该层1177还提供从LED层1100的最大程度的增强的散热。
图12图示说明如何能在单个制造平台或晶片上制造如同上述器件的不止一个LED器件。在此，在制造两个LED单元1201和1202的金属化步骤中，将这两个单元电连接。LED可以并联、串联或者利用串-并联的组合连接。这些可以被切开，或者在其他实施方案中，可以在不进行切割的情况下就被布置在衬底上，以形成多个LED的单元或光源。
本发明不应该被视为限于上述具体实施方案，而是应该被理解为涵盖如本发明权利要求书完全地阐述的本发明的所有方面。本发明所属领域的技术人员在阅读了本公开之后，将很容易清楚本发明可能可应用的各种修改形式、等同处理以及多种结构。权利要求书旨在涵盖这样修改形式。

Claims (11)

1.一种发光器件，所述发光器件包括：
半导体LED，所述半导体LED包括掺杂区和本征区，所述半导体LED的第一表面用在所述第一表面的至少一部分上方的导电金属化层来金属化；
光学许可层，所述光学许可层靠近所述半导体LED的第二表面，所述半导体LED的所述第一表面和所述第二表面位于所述半导体LED的相对的面上；
光学可限定材料，所述光学可限定材料靠近所述光学许可层或者位于所述光学许可层内，影响穿过所述光学许可层的发射光的光学特性；以及
光学许可覆盖衬底，所述光学许可覆盖衬底覆盖以上组件中的至少一部分。
2.根据权利要求1所述的发光器件，还包括覆盖所述光学透射性覆盖衬底的至少一部分的透镜。
3.根据权利要求1所述的发光器件，还包括至少一个凹陷，所述至少一个凹陷形成在所述半导体LED中，达到在所述半导体LED的第一掺杂层和第一外部驱动电极之间允许电连接的深度。
4.根据权利要求1所述的发光器件，还包括靠近所述半导体LED的所述第一表面的钝化层，所述钝化层基本上是非导电的并且还设置有至少一对孔，以便导电电极与所述钝化层的连接。
5.根据权利要求4所述的发光器件，所述钝化层还包括成形边缘，所述成形边缘被构造用于将所述发光器件产生的光从所述成形边缘向外反射。
6.根据权利要求1所述的发光器件，还包括光学许可粘合层，所述光学许可粘合层耦合所述光学许可层和所述光学可限定材料。
7.根据权利要求1所述的发光器件，还包括机械偏置构件，所述机械偏置构件提供所述光学许可层和所述光学许可覆盖之间的空间间隔。
8.根据权利要求1所述的发光器件，还包括至少一个对准标记，所述至少一个对准标记指示在包括所述光学许可覆盖的一加工衬底中所述器件相对于所述光学许可覆盖的所要求位置。
9.一种制造发光器件的方法，所述方法包括：
在设置在光学许可层上的发光器件(LED)中，形成多个掺杂层；
在所述LED中形成凹陷，以在所述LED的第一掺杂层的深度处允许与所述LED的所述第一掺杂层电接触；
将所述LED的面的至少一部分金属化以形成金属化层，提供与靠近所述LED的所述面的所述LED的所述第一掺杂层和第二掺杂层的电接触；以及
使用光学许可粘合剂，以机械方式将所述光学许可层固定于光学许可覆盖衬底。
10.根据权利要求9所述的方法，还包括将电绝缘钝化层施用于所述金属化层，并且进一步在所述钝化层中提供至少一对孔，以便对应的成对偏置电极与对应的所述LED的所述第一掺杂层和所述第二掺杂层的电耦合。
11.根据权利要求9所述的方法，还包括在所述LED上放置一个或更多个对准标记，以使所述LED能相对于所述光学许可覆盖衬底正确定位。
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US8952405B2 (en) 2015-02-10
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US9837583B2 (en) 2017-12-05
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