CN102682938B - 抗硫化芯片电阻器及其制造方法 - Google Patents
抗硫化芯片电阻器及其制造方法 Download PDFInfo
- Publication number
- CN102682938B CN102682938B CN201110443555.XA CN201110443555A CN102682938B CN 102682938 B CN102682938 B CN 102682938B CN 201110443555 A CN201110443555 A CN 201110443555A CN 102682938 B CN102682938 B CN 102682938B
- Authority
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- Prior art keywords
- protection coating
- end electrode
- metal
- outer protection
- coat
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000005987 sulfurization reaction Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 94
- 238000000576 coating method Methods 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052709 silver Inorganic materials 0.000 claims abstract description 28
- 239000004332 silver Substances 0.000 claims abstract description 28
- 238000009713 electroplating Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 238000001465 metallisation Methods 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 238000007789 sealing Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 4
- 230000019635 sulfation Effects 0.000 claims description 4
- 238000005670 sulfation reaction Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 44
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 29
- 229910052759 nickel Inorganic materials 0.000 abstract description 22
- 230000008569 process Effects 0.000 abstract description 7
- 239000011195 cermet Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 21
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 9
- 229910052717 sulfur Inorganic materials 0.000 description 9
- 239000011593 sulfur Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 239000000976 ink Substances 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000012080 ambient air Substances 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 argent Compound Chemical class 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/034—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/288—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thin film techniques
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
- Details Of Resistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89250307P | 2007-03-01 | 2007-03-01 | |
| US60/892,503 | 2007-03-01 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880010666.8A Division CN101681705B (zh) | 2007-03-01 | 2008-02-21 | 抗硫化芯片电阻器及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102682938A CN102682938A (zh) | 2012-09-19 |
| CN102682938B true CN102682938B (zh) | 2016-06-15 |
Family
ID=39535523
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110443555.XA Active CN102682938B (zh) | 2007-03-01 | 2008-02-21 | 抗硫化芯片电阻器及其制造方法 |
| CN200880010666.8A Active CN101681705B (zh) | 2007-03-01 | 2008-02-21 | 抗硫化芯片电阻器及其制造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880010666.8A Active CN101681705B (zh) | 2007-03-01 | 2008-02-21 | 抗硫化芯片电阻器及其制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7982582B2 (https=) |
| EP (1) | EP2130207B1 (https=) |
| JP (4) | JP2010520624A (https=) |
| CN (2) | CN102682938B (https=) |
| TW (2) | TWI479514B (https=) |
| WO (1) | WO2008109262A1 (https=) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7982582B2 (en) * | 2007-03-01 | 2011-07-19 | Vishay Intertechnology Inc. | Sulfuration resistant chip resistor and method for making same |
| CN103219964A (zh) | 2012-01-18 | 2013-07-24 | 新科实业有限公司 | 衰减器 |
| JP6227877B2 (ja) * | 2013-02-26 | 2017-11-08 | ローム株式会社 | チップ抵抗器、およびチップ抵抗器の製造方法 |
| CN104347208B (zh) * | 2013-07-31 | 2018-10-12 | 南京中兴新软件有限责任公司 | 一种电阻器制作方法、电阻器及电路 |
| JP6274789B2 (ja) | 2013-08-30 | 2018-02-07 | ローム株式会社 | チップ抵抗器 |
| JP6386723B2 (ja) * | 2013-12-11 | 2018-09-05 | Koa株式会社 | 抵抗素子の製造方法 |
| TWI508109B (zh) * | 2013-12-25 | 2015-11-11 | Yageo Corp | Chip resistors |
| JP6326192B2 (ja) * | 2014-03-19 | 2018-05-16 | Koa株式会社 | チップ抵抗器およびその製造法 |
| US9336931B2 (en) | 2014-06-06 | 2016-05-10 | Yageo Corporation | Chip resistor |
| JP6373723B2 (ja) * | 2014-10-31 | 2018-08-15 | Koa株式会社 | チップ抵抗器 |
| US9818512B2 (en) | 2014-12-08 | 2017-11-14 | Vishay Dale Electronics, Llc | Thermally sprayed thin film resistor and method of making |
| JP6398749B2 (ja) * | 2015-01-28 | 2018-10-03 | 三菱マテリアル株式会社 | 抵抗器及び抵抗器の製造方法 |
| WO2016153116A1 (ko) * | 2015-03-23 | 2016-09-29 | 조인셋 주식회사 | 내 환경성이 향상된 탄성 전기접촉단자 및 그 제조 방법 |
| KR101883040B1 (ko) | 2016-01-08 | 2018-07-27 | 삼성전기주식회사 | 칩 저항 소자 |
| JP2017168817A (ja) * | 2016-03-15 | 2017-09-21 | ローム株式会社 | チップ抵抗器およびその製造方法 |
| TWI598878B (zh) * | 2016-05-24 | 2017-09-11 | 宇瞻科技股份有限公司 | 抗硫化之記憶體儲存裝置 |
| CN105931663B (zh) * | 2016-05-24 | 2019-03-01 | 宇瞻科技股份有限公司 | 抗硫化的内存存储装置 |
| TWI620318B (zh) * | 2016-08-10 | 2018-04-01 | Wafer resistor device and method of manufacturing same | |
| KR102527724B1 (ko) * | 2016-11-15 | 2023-05-02 | 삼성전기주식회사 | 칩 저항 소자 및 칩 저항 소자 어셈블리 |
| CN108231308B (zh) * | 2016-12-21 | 2020-03-24 | 李文熙 | 铝端电极芯片电阻器的制造方法 |
| JP7385358B2 (ja) | 2016-12-27 | 2023-11-22 | ローム株式会社 | チップ抵抗器 |
| TWI605476B (zh) * | 2017-02-06 | 2017-11-11 | Anti-vulcanization chip resistor and its manufacturing method | |
| CN108399992B (zh) * | 2017-02-08 | 2019-12-27 | 东莞华科电子有限公司 | 抗硫化的晶片电阻及其制法 |
| CN107331486A (zh) * | 2017-06-28 | 2017-11-07 | 中国振华集团云科电子有限公司 | 抗硫化电阻器及其制备方法 |
| CN111344818B (zh) * | 2017-11-02 | 2022-06-03 | 罗姆股份有限公司 | 片式电阻器 |
| CN107946075B (zh) * | 2017-11-18 | 2024-01-30 | 湖南艾华集团股份有限公司 | 叠层电容器 |
| KR102160500B1 (ko) * | 2018-07-11 | 2020-09-28 | 주식회사 테토스 | 기판 측면부 배선 형성 방법 |
| CN109148065B (zh) * | 2018-08-21 | 2020-02-18 | 广东风华高新科技股份有限公司 | 一种抗硫化片式电阻器及其制造方法 |
| KR20210046669A (ko) | 2018-08-23 | 2021-04-28 | 미쓰비시 마테리알 가부시키가이샤 | 보호막이 형성된 서미스터 및 그 제조 방법 |
| US11056630B2 (en) | 2019-02-13 | 2021-07-06 | Samsung Electronics Co., Ltd. | Display module having glass substrate on which side wirings are formed and manufacturing method of the same |
| TWI707366B (zh) * | 2020-03-25 | 2020-10-11 | 光頡科技股份有限公司 | 電阻元件 |
| CN116457903A (zh) * | 2020-11-17 | 2023-07-18 | 京瓷株式会社 | 电路基板以及电子装置 |
| CN113972045B (zh) * | 2021-10-26 | 2023-11-03 | 江西昶龙科技有限公司 | 一种制备抗硫化厚膜晶片电阻的方法 |
| JP2023114299A (ja) * | 2022-02-04 | 2023-08-17 | Koa株式会社 | チップ抵抗器 |
| JP7788346B2 (ja) * | 2022-05-11 | 2025-12-18 | Koa株式会社 | チップ抵抗器 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6201290B1 (en) * | 1998-01-08 | 2001-03-13 | Matsushita Electric Industrial Co., Ltd. | Resistor having moisture resistant layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135098A (ja) * | 1974-09-20 | 1976-03-25 | Toray Industries | Denkiteikotai |
| JP3282424B2 (ja) | 1995-01-20 | 2002-05-13 | 松下電器産業株式会社 | 角形薄膜チップ抵抗器の製造方法 |
| JPH11195505A (ja) * | 1997-12-26 | 1999-07-21 | E I Du Pont De Nemours & Co | 厚膜抵抗体及びその製造方法 |
| JPH11204301A (ja) | 1998-01-20 | 1999-07-30 | Matsushita Electric Ind Co Ltd | 抵抗器 |
| JP3852649B2 (ja) * | 1998-08-18 | 2006-12-06 | ローム株式会社 | チップ抵抗器の製造方法 |
| JP2000299203A (ja) * | 1999-04-15 | 2000-10-24 | Matsushita Electric Ind Co Ltd | 抵抗器およびその製造方法 |
| JP3967040B2 (ja) | 1999-07-05 | 2007-08-29 | ローム株式会社 | 多連のチップ型抵抗器の構造 |
| JP2001110601A (ja) | 1999-10-14 | 2001-04-20 | Matsushita Electric Ind Co Ltd | 抵抗器およびその製造方法 |
| JP2001143905A (ja) * | 1999-11-17 | 2001-05-25 | Murata Mfg Co Ltd | チップ型サーミスタの製造方法 |
| JP4722318B2 (ja) * | 2000-06-05 | 2011-07-13 | ローム株式会社 | チップ抵抗器 |
| JP2002184602A (ja) * | 2000-12-13 | 2002-06-28 | Matsushita Electric Ind Co Ltd | 角形チップ抵抗器 |
| JP3958532B2 (ja) * | 2001-04-16 | 2007-08-15 | ローム株式会社 | チップ抵抗器の製造方法 |
| JP3935687B2 (ja) * | 2001-06-20 | 2007-06-27 | アルプス電気株式会社 | 薄膜抵抗素子およびその製造方法 |
| KR20040053097A (ko) * | 2001-11-28 | 2004-06-23 | 로무 가부시키가이샤 | 칩 저항기와 그 제조방법 |
| JP4204029B2 (ja) * | 2001-11-30 | 2009-01-07 | ローム株式会社 | チップ抵抗器 |
| KR20030052196A (ko) * | 2001-12-20 | 2003-06-26 | 삼성전기주식회사 | 박막 칩 저항기 및 그 제조방법 |
| JP2004259864A (ja) * | 2003-02-25 | 2004-09-16 | Rohm Co Ltd | チップ抵抗器 |
| JP2005191406A (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | チップ抵抗器およびその製造方法 |
| JP2005268302A (ja) * | 2004-03-16 | 2005-09-29 | Koa Corp | チップ抵抗器およびその製造方法 |
| JP2006024767A (ja) * | 2004-07-08 | 2006-01-26 | Koa Corp | チップ抵抗器の製造方法 |
| US7772961B2 (en) * | 2004-09-15 | 2010-08-10 | Panasonic Corporation | Chip-shaped electronic part |
| JP4841914B2 (ja) * | 2005-09-21 | 2011-12-21 | コーア株式会社 | チップ抵抗器 |
| US7982582B2 (en) | 2007-03-01 | 2011-07-19 | Vishay Intertechnology Inc. | Sulfuration resistant chip resistor and method for making same |
-
2008
- 2008-02-13 US US12/030,281 patent/US7982582B2/en active Active
- 2008-02-21 JP JP2009552007A patent/JP2010520624A/ja active Pending
- 2008-02-21 EP EP08730372.3A patent/EP2130207B1/en active Active
- 2008-02-21 CN CN201110443555.XA patent/CN102682938B/zh active Active
- 2008-02-21 WO PCT/US2008/054557 patent/WO2008109262A1/en not_active Ceased
- 2008-02-21 CN CN200880010666.8A patent/CN101681705B/zh active Active
- 2008-02-26 TW TW101136473A patent/TWI479514B/zh active
- 2008-02-26 TW TW097106574A patent/TWI423271B/zh active
-
2011
- 2011-07-18 US US13/185,065 patent/US8514051B2/en active Active
-
2012
- 2012-12-25 JP JP2012280566A patent/JP2013080952A/ja active Pending
-
2013
- 2013-06-26 JP JP2013133754A patent/JP2013219387A/ja active Pending
- 2013-08-19 US US13/970,011 patent/US8957756B2/en active Active
-
2016
- 2016-05-06 JP JP2016093075A patent/JP6546118B2/ja active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6201290B1 (en) * | 1998-01-08 | 2001-03-13 | Matsushita Electric Industrial Co., Ltd. | Resistor having moisture resistant layer |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008109262A1 (en) | 2008-09-12 |
| TWI479514B (zh) | 2015-04-01 |
| US20120126934A1 (en) | 2012-05-24 |
| US20130335191A1 (en) | 2013-12-19 |
| JP2013080952A (ja) | 2013-05-02 |
| US8514051B2 (en) | 2013-08-20 |
| TWI423271B (zh) | 2014-01-11 |
| TW201303912A (zh) | 2013-01-16 |
| US20080211619A1 (en) | 2008-09-04 |
| CN101681705B (zh) | 2012-02-15 |
| US8957756B2 (en) | 2015-02-17 |
| EP2130207A1 (en) | 2009-12-09 |
| CN101681705A (zh) | 2010-03-24 |
| JP2013219387A (ja) | 2013-10-24 |
| JP2010520624A (ja) | 2010-06-10 |
| CN102682938A (zh) | 2012-09-19 |
| HK1142715A1 (en) | 2010-12-10 |
| JP6546118B2 (ja) | 2019-07-17 |
| US7982582B2 (en) | 2011-07-19 |
| TW200901234A (en) | 2009-01-01 |
| EP2130207B1 (en) | 2018-09-05 |
| JP2016157980A (ja) | 2016-09-01 |
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