CN102666944B - 合成cvd金刚石 - Google Patents

合成cvd金刚石 Download PDF

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Publication number
CN102666944B
CN102666944B CN201080058389.5A CN201080058389A CN102666944B CN 102666944 B CN102666944 B CN 102666944B CN 201080058389 A CN201080058389 A CN 201080058389A CN 102666944 B CN102666944 B CN 102666944B
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CN
China
Prior art keywords
diamond
absorption
hydrogen
diamond material
source gas
Prior art date
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CN201080058389.5A
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English (en)
Chinese (zh)
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CN102666944A (zh
Inventor
D·J·特威切恩
A·M·贝内特
R·U·A·卡恩
P·M·马蒂诺
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Element Six Ltd
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Element Six Ltd
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Publication date
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Priority to CN201510083320.2A priority Critical patent/CN104746038B/zh
Publication of CN102666944A publication Critical patent/CN102666944A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Adornments (AREA)
CN201080058389.5A 2009-12-22 2010-12-15 合成cvd金刚石 Active CN102666944B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510083320.2A CN104746038B (zh) 2009-12-22 2010-12-15 合成cvd金刚石

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0922449A GB2476478A (en) 2009-12-22 2009-12-22 Chemical vapour deposition diamond synthesis
GB0922449.4 2009-12-22
PCT/EP2010/069828 WO2011076643A1 (en) 2009-12-22 2010-12-15 Synthetic cvd diamond

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201510083320.2A Division CN104746038B (zh) 2009-12-22 2010-12-15 合成cvd金刚石

Publications (2)

Publication Number Publication Date
CN102666944A CN102666944A (zh) 2012-09-12
CN102666944B true CN102666944B (zh) 2015-04-29

Family

ID=41717422

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201080058389.5A Active CN102666944B (zh) 2009-12-22 2010-12-15 合成cvd金刚石
CN201510083320.2A Active CN104746038B (zh) 2009-12-22 2010-12-15 合成cvd金刚石

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201510083320.2A Active CN104746038B (zh) 2009-12-22 2010-12-15 合成cvd金刚石

Country Status (10)

Country Link
EP (1) EP2516701B1 (enExample)
JP (2) JP5615937B2 (enExample)
CN (2) CN102666944B (enExample)
CA (1) CA2782159C (enExample)
GB (1) GB2476478A (enExample)
IL (1) IL220094A (enExample)
MY (1) MY160769A (enExample)
RU (1) RU2516574C2 (enExample)
SG (2) SG181831A1 (enExample)
WO (1) WO2011076643A1 (enExample)

Families Citing this family (19)

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Publication number Priority date Publication date Assignee Title
BE1019439A3 (fr) 2010-07-30 2012-07-03 Diarotech Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
GB201112113D0 (en) * 2011-07-14 2011-08-31 Element Six Ltd Single crystal diamond substrates for synthesis of single crystal diamond material
GB201121642D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
CN106460226A (zh) * 2014-07-15 2017-02-22 住友电气工业株式会社 单晶金刚石、制造单晶金刚石的方法和包含单晶金刚石的工具
CN104182615B (zh) * 2014-07-29 2017-06-20 北京科技大学 一种在三元相图中表示任意成分夹杂物数量的方法
CN104775154B (zh) * 2015-04-25 2017-06-27 哈尔滨工业大学 一种同质外延生长单晶金刚石时控制表面温度的方法
CN104878447B (zh) * 2015-06-04 2017-03-01 哈尔滨工业大学 一种同质外延生长单晶金刚石的籽晶衬底原位连接方法
CN104975343B (zh) * 2015-06-04 2017-08-25 哈尔滨工业大学 利用氢等离子体多次刻蚀/退火循环工艺提高金刚石籽晶质量的方法
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
AT517693B1 (de) * 2015-11-11 2017-04-15 Zkw Group Gmbh Konverter für Leuchtvorrichtungen
GB201522502D0 (en) * 2015-12-21 2016-02-03 Element Six Technologies Ltd Thick Optical quality synethetic polycrystalline Diamond Material with low bulk absorption and low microfeature density
GB201620415D0 (en) * 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
RU2660872C1 (ru) * 2017-05-29 2018-07-10 Общество с ограниченной ответственностью "СИНТЕЗ" (ООО "СИНТЕЗ") Способ получения выращенных радиоактивных алмазов и выращенный радиоактивный алмаз
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
CA3168480A1 (en) 2020-01-20 2021-07-29 M7D Corporation Method of growing larger diamonds
RU2746870C1 (ru) * 2020-09-11 2021-04-21 Федеральное государственное унитарное предприятие "ВСЕРОССИЙСКИЙ НАУЧНО-ИССЛЕДОВАТЕЛЬСКИЙ ИНСТИТУТ ОПТИКО-ФИЗИЧЕСКИХ ИЗМЕРЕНИЙ" (ФГУП "ВНИИОФИ") Однофотонный источник излучения
CN112886370B (zh) * 2021-01-08 2022-05-31 中国科学院理化技术研究所 金刚石拉曼长波激光装置及本征吸收带预填充方法
GB2618050A (en) * 2021-08-24 2023-11-01 Element Six Tech Ltd Raman laser system
GB2614521A (en) * 2021-10-19 2023-07-12 Element Six Tech Ltd CVD single crystal diamond

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Publication number Priority date Publication date Assignee Title
WO2004022821A1 (en) * 2002-09-06 2004-03-18 Element Six Limited Coloured diamond
WO2004046427A1 (en) * 2002-11-21 2004-06-03 Element Six Limited Optical quality diamond material

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JPH0492894A (ja) * 1990-08-03 1992-03-25 Sumitomo Electric Ind Ltd 高熱伝導性気相合成ダイヤモンド
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CN104630882B (zh) * 2009-06-26 2018-03-30 六号元素有限公司 用于制备鲜艳橙色着色的单晶cvd 金刚石的方法及其获得的产品

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WO2004022821A1 (en) * 2002-09-06 2004-03-18 Element Six Limited Coloured diamond
WO2004046427A1 (en) * 2002-11-21 2004-06-03 Element Six Limited Optical quality diamond material

Also Published As

Publication number Publication date
RU2012131169A (ru) 2014-01-27
CN102666944A (zh) 2012-09-12
EP2516701A1 (en) 2012-10-31
HK1174068A1 (en) 2013-05-31
CA2782159C (en) 2015-04-28
WO2011076643A1 (en) 2011-06-30
MY160769A (en) 2017-03-15
CA2782159A1 (en) 2011-06-30
GB0922449D0 (en) 2010-02-03
SG2014015143A (en) 2014-08-28
GB2476478A (en) 2011-06-29
CN104746038A (zh) 2015-07-01
RU2516574C2 (ru) 2014-05-20
JP2014221713A (ja) 2014-11-27
SG181831A1 (en) 2012-07-30
JP5938790B2 (ja) 2016-06-22
IL220094A (en) 2015-10-29
CN104746038B (zh) 2017-10-31
JP2013514959A (ja) 2013-05-02
JP5615937B2 (ja) 2014-10-29
EP2516701B1 (en) 2016-08-03

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