JP5615937B2 - 合成ｃｖｄダイヤモンド - Google Patents

合成ｃｖｄダイヤモンド Download PDF

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JP5615937B2
JP5615937B2 JP2012545239A JP2012545239A JP5615937B2 JP 5615937 B2 JP5615937 B2 JP 5615937B2 JP 2012545239 A JP2012545239 A JP 2012545239A JP 2012545239 A JP2012545239 A JP 2012545239A JP 5615937 B2 JP5615937 B2 JP 5615937B2
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sample
diamond
diamond material
cvd diamond
hydrogen
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Japanese (ja)
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JP2013514959A5 (enExample
JP2013514959A (ja
Inventor
ダニエル ジェイムズ トゥウィッチェン
ダニエル ジェイムズ トゥウィッチェン
アンドリュー マイケル ベネット
アンドリュー マイケル ベネット
リズワン ウディン アーマッド カーン
リズワン ウディン アーマッド カーン
フィリップ モーリス マルティノ
フィリップ モーリス マルティノ
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エレメント シックス リミテッド
エレメント シックス リミテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Adornments (AREA)
JP2012545239A 2009-12-22 2010-12-15 合成ｃｖｄダイヤモンド Active JP5615937B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0922449A GB2476478A (en) 2009-12-22 2009-12-22 Chemical vapour deposition diamond synthesis
GB0922449.4 2009-12-22
PCT/EP2010/069828 WO2011076643A1 (en) 2009-12-22 2010-12-15 Synthetic cvd diamond

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014122151A Division JP5938790B2 (ja) 2009-12-22 2014-06-13 合成ｃｖｄダイヤモンド

Publications (3)

Publication Number Publication Date
JP2013514959A JP2013514959A (ja) 2013-05-02
JP2013514959A5 JP2013514959A5 (enExample) 2014-01-16
JP5615937B2 true JP5615937B2 (ja) 2014-10-29

Family

ID=41717422

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012545239A Active JP5615937B2 (ja) 2009-12-22 2010-12-15 合成ｃｖｄダイヤモンド
JP2014122151A Active JP5938790B2 (ja) 2009-12-22 2014-06-13 合成ｃｖｄダイヤモンド

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014122151A Active JP5938790B2 (ja) 2009-12-22 2014-06-13 合成ｃｖｄダイヤモンド

Country Status (10)

Country Link
EP (1) EP2516701B1 (enExample)
JP (2) JP5615937B2 (enExample)
CN (2) CN104746038B (enExample)
CA (1) CA2782159C (enExample)
GB (1) GB2476478A (enExample)
IL (1) IL220094A (enExample)
MY (1) MY160769A (enExample)
RU (1) RU2516574C2 (enExample)
SG (2) SG181831A1 (enExample)
WO (1) WO2011076643A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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BE1019439A3 (fr) 2010-07-30 2012-07-03 Diarotech Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
GB201112113D0 (en) * 2011-07-14 2011-08-31 Element Six Ltd Single crystal diamond substrates for synthesis of single crystal diamond material
GB201121642D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
EP3170926B1 (en) * 2014-07-15 2025-02-12 Sumitomo Electric Industries, Ltd. Single crystal diamond, method for producing single crystal diamond, and tool using single crystal diamond
CN104182615B (zh) * 2014-07-29 2017-06-20 北京科技大学 一种在三元相图中表示任意成分夹杂物数量的方法
CN104775154B (zh) * 2015-04-25 2017-06-27 哈尔滨工业大学 一种同质外延生长单晶金刚石时控制表面温度的方法
CN104878447B (zh) * 2015-06-04 2017-03-01 哈尔滨工业大学 一种同质外延生长单晶金刚石的籽晶衬底原位连接方法
CN104975343B (zh) * 2015-06-04 2017-08-25 哈尔滨工业大学 利用氢等离子体多次刻蚀/退火循环工艺提高金刚石籽晶质量的方法
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
AT517693B1 (de) * 2015-11-11 2017-04-15 Zkw Group Gmbh Konverter für Leuchtvorrichtungen
GB201522502D0 (en) * 2015-12-21 2016-02-03 Element Six Technologies Ltd Thick Optical quality synethetic polycrystalline Diamond Material with low bulk absorption and low microfeature density
GB201620415D0 (en) * 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
RU2660872C1 (ru) * 2017-05-29 2018-07-10 Общество с ограниченной ответственностью "СИНТЕЗ" (ООО "СИНТЕЗ") Способ получения выращенных радиоактивных алмазов и выращенный радиоактивный алмаз
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
US12139812B2 (en) 2020-01-20 2024-11-12 Advanced Diamond Holdings, Llc Method of growing bulk single crystal diamond on a substrate in a prescribed gas environment at a prescribed temperature and pressure
RU2746870C1 (ru) * 2020-09-11 2021-04-21 Федеральное государственное унитарное предприятие "ВСЕРОССИЙСКИЙ НАУЧНО-ИССЛЕДОВАТЕЛЬСКИЙ ИНСТИТУТ ОПТИКО-ФИЗИЧЕСКИХ ИЗМЕРЕНИЙ" (ФГУП "ВНИИОФИ") Однофотонный источник излучения
CN112886370B (zh) * 2021-01-08 2022-05-31 中国科学院理化技术研究所 金刚石拉曼长波激光装置及本征吸收带预填充方法
GB2618050A (en) * 2021-08-24 2023-11-01 Element Six Tech Ltd Raman laser system
GB2614521A (en) 2021-10-19 2023-07-12 Element Six Tech Ltd CVD single crystal diamond

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JPH03252396A (ja) * 1990-02-27 1991-11-11 Idemitsu Petrochem Co Ltd ダイヤモンドの製造方法
JPH0492894A (ja) * 1990-08-03 1992-03-25 Sumitomo Electric Ind Ltd 高熱伝導性気相合成ダイヤモンド
JP2913796B2 (ja) * 1990-08-09 1999-06-28 住友電気工業株式会社 気相合成ダイヤモンド
EP0671482A1 (en) 1994-03-11 1995-09-13 General Electric Company Toughened chemically vapor deposited diamond
JP3484749B2 (ja) * 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
US5451430A (en) 1994-05-05 1995-09-19 General Electric Company Method for enhancing the toughness of CVD diamond
US5672395A (en) 1994-05-05 1997-09-30 General Electric Company Method for enhancing the toughness of CVD diamond
JP3261687B2 (ja) * 1994-06-09 2002-03-04 日本電信電話株式会社 パッドコンディショナー及びその製造方法
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DE60335117D1 (de) * 2002-09-06 2011-01-05 Element Six Ltd Verfahren zum ändern die farbe eines cvd-artigen diamanteinkristalles und dadurch hergestellte diamant-schicht
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CN101023028A (zh) * 2004-09-10 2007-08-22 华盛顿卡内基研究所 超硬cvd单晶金刚石及其三维生长
RU2398922C2 (ru) 2005-05-25 2010-09-10 Карнеги Инститьюшн Оф Вашингтон Бесцветный монокристаллический алмаз, полученный химическим осаждением из газовой фазы при высокой скорости роста
JP5284575B2 (ja) * 2006-10-31 2013-09-11 住友電気工業株式会社 ダイヤモンド単結晶及びその製造方法
EP1990313A1 (en) * 2007-05-10 2008-11-12 INSERM (Institut National de la Santé et de la Recherche Médicale) Method to produce light-emitting nano-particles of diamond
WO2009045445A1 (en) * 2007-10-02 2009-04-09 Carnegie Institution Of Washington Low pressure method annealing diamonds
SG177261A1 (en) * 2009-06-26 2012-02-28 Element Six Ltd Method for making fancy orange coloured single crystal cvd diamond and product obtained

Also Published As

Publication number Publication date
RU2012131169A (ru) 2014-01-27
RU2516574C2 (ru) 2014-05-20
WO2011076643A1 (en) 2011-06-30
EP2516701B1 (en) 2016-08-03
HK1174068A1 (en) 2013-05-31
GB0922449D0 (en) 2010-02-03
JP5938790B2 (ja) 2016-06-22
CN102666944A (zh) 2012-09-12
EP2516701A1 (en) 2012-10-31
CN104746038A (zh) 2015-07-01
JP2014221713A (ja) 2014-11-27
JP2013514959A (ja) 2013-05-02
SG2014015143A (en) 2014-08-28
CA2782159C (en) 2015-04-28
SG181831A1 (en) 2012-07-30
CN104746038B (zh) 2017-10-31
CN102666944B (zh) 2015-04-29
MY160769A (en) 2017-03-15
GB2476478A (en) 2011-06-29
CA2782159A1 (en) 2011-06-30
IL220094A (en) 2015-10-29

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