CN102652185A - 铟靶材及其制造方法 - Google Patents

铟靶材及其制造方法 Download PDF

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CN102652185A
CN102652185A CN2011800048448A CN201180004844A CN102652185A CN 102652185 A CN102652185 A CN 102652185A CN 2011800048448 A CN2011800048448 A CN 2011800048448A CN 201180004844 A CN201180004844 A CN 201180004844A CN 102652185 A CN102652185 A CN 102652185A
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前川贵诚
远藤瑶辅
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JX Nippon Mining and Metals Corp
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Abstract

本发明提供一种可良好地抑制异常放电产生的铟靶材及其制造方法。该铟靶材的靶材表面的算术平均粗糙度(Ra)为1.6μm以下。

Description

铟靶材及其制造方法
技术领域
本发明涉及一种溅射靶材及其制造方法,更详细而言,涉及一种铟靶材及其制造方法。
背景技术
铟作为形成Cu-In-Ga-Se类(CIGS类)薄膜太阳能电池吸光层的溅射靶材使用。
目前,如专利文献1所公开的那样,铟靶材通过使铟合金等附着于托板上之后,将铟浇注于金属模具进行铸造而制作。
专利文献
专利文献1:日本特公昭63-44820号公报
发明内容
然而,通过上述熔铸法制造铟靶材时,就通过将铟浇铸于金属模具所得的铟锭而言,若不实施表面加工,则会在其表面形成氧化膜。若为除去该氧化膜而打磨铟锭表面,则由于铟为非常柔软的金属,反而会使表面变粗糙。因此,上述铟靶材表面的粗糙化成为溅射时异常放电产生的原因。
因此,本发明的课题是提供一种可良好地抑制异常放电产生的铟靶材及其制造方法。
本发明人为了解决上述课题而潜心研究,结果发现:通过对以熔铸法而制作的铟靶材表面进行刮削加工,使靶材表面的算术平均粗糙度(Ra)为1.6μm以下,优选进一步使靶材表面的十点平均粗糙度(Rz)为15μm以下,由此可良好地抑制异常放电的产生。
以上述发现为基础而完成的本发明的一个方面是靶材表面的算术平均粗糙度(Ra)为1.6μm以下的铟靶材。
本发明所述的铟靶材的一个实施方式中,算术平均粗糙度(Ra)为1.2μm以下。
本发明所述的铟靶材的另一实施方式中,靶材表面的十点平均粗糙度(Rz)为15μm以下。
本发明所述的铟靶材的又一实施方式中,十点平均粗糙度(Rz)为10μm以下。
本发明另一方面是通过将铟原料熔铸后,使用刮刀进行刮削加工而制作本发明铟靶材的铟靶材制造方法。
根据本发明,可提供一种能良好地抑制异常放电产生的铟靶材及其制造方法。
具体实施方式
本发明所述的铟靶材具有如下特征:靶材表面的算术平均粗糙度(Ra)为1.6μm以下。若靶材表面的算术平均粗糙度(Ra)超过1.6μm,则在对靶进行溅射时,有可能产生异常放电。靶材表面的算术平均粗糙度(Ra)优选为1.2μm以下,更优选为1.0μm以下。本发明中,“算术平均粗糙度(Ra)”如JIS B0601-1994所定义。
本发明所述的铟靶材具有如下特征:靶材表面的十点平均粗糙度(Rz)为15μm以下。若靶材表面的十点平均粗糙度(Rz)为15μm以下,则可更好地抑制对靶材进行溅射时异常放电的产生。靶材表面的十点平均粗糙度(Rz)优选为10μm以下,更优选为8μm以下。本发明中,“十点平均粗糙度(Rz)”如JIS B0601-1994所定义。
其次,对本发明所述的铟靶材制造方法中适合的例子逐步进行说明。首先,将作为原料的铟熔解,浇注至铸模。若所使用的原料铟含有杂质,则使用该原料制作而成的太阳能电池的转换效率会降低,因此理想的是原料铟具有高纯度,例如可使用纯度99.99质量%以上的铟。然后,将原料铟冷却至室温,形成铟锭。冷却速度可为通过空气的自然放置冷却。
继而,若需要,则可将所得的铟锭冷轧至所需的厚度,进而若有需要,可对其进行酸洗或脱脂。接着,例如使用刃宽5~100mm的刮刀进行表面的刮削加工,由此制作铟靶材。只要具有可经受铟靶材表面刮削的硬度、具有优异的耐磨损性,对刮刀并无特别的限制,例如可使用不锈钢、高铬钢等金属制刮刀,或者,若可能,则亦可使用陶瓷制刮刀。通过使用上述刮刀打磨靶材表面,将靶材表面的算术平均粗糙度(Ra)加工成1.6μm以下、优选为1.2μm以下、更优选为1.0μm以下。此外,对于靶材表面的十点平均粗糙度(Rz),也加工成15μm以下、优选为10μm以下、更优选为8μm以下。
以上述方式所得的铟靶材可适合用作CIGS类薄膜太阳能电池用光吸收层的溅射靶材。
实施例
以下,同时说明本发明的实施例与比较例,这些实施例是为了更好地理解本发明及其优点而提供,并无限制本发明的意图。
实施例1
在直径250mm、厚度5mm的铜制托板上,围出直径205mm、高度7mm的圆柱状铸模,在其内部浇注以160℃熔解的铟原料(纯度5N)之后,冷却至室温,形成圆盘状的铟锭(直径204mm×厚度6mm)。然后,使用刃宽20mm的不锈钢制刮刀对该铟锭的表面进行刮削加工,获得铟靶材。
实施例2
除将不锈钢制刮刀的刃宽设为40mm以外,其他以与实施例1相同的条件制作铟靶材。
实施例3
除将不锈钢制刮刀的刃宽设为10mm以外,其他以与实施例1相同的条件制作铟靶材。
实施例4
除将不锈钢制刮刀的刃宽设为5mm以外,其他以与实施例1相同的条件制作铟靶材。
比较例1
除不进行靶材表面的刮削以外,其他以与实施例1相同的条件制作铟靶材。
比较例2
除用进行铣削加工(フライス加工)来代替使用不锈钢制刮刀的靶材表面的刮削加工以外,其他以与实施例1相同的条件制作铟靶材。评价
对由实施例和比较例所得的铟靶材,测定JIS B0601-1994所规定的“算术平均粗糙度(Ra)”及“十点平均粗糙度(Rz)”。
此外,使用ANELVA制SPF-313H溅射装置,以溅射开始前的腔室内的极限真空压力为1×10-4Pa、溅射时的压力为0.5Pa、氩溅射气流量为5SCCM、溅射功率为650W的条件,对上述实施例和比较例的铟靶材进行30分钟溅射,测量通过目测观察到的溅射中的异常放电次数。
各测定结果显示于表1中。
表1
 Ra(μm)  Rz(μm)   异常放电次数
 实施例1   1.3   12   0
 实施例2   1.6   15   0
 实施例3   1.2   10   0
 实施例4   0.8   8   0
 比较例1   2   20   80
 比较例2   50   150   250
实施例1中,使用刃宽20mm的不锈钢制刮刀对靶材表面进行刮削加工,算术平均粗糙度(Ra)为1.3μm且十点平均粗糙度(Rz)为12μm。因此,未发现异常放电。
实施例2中,使用刃宽较实施例1宽的40mm的不锈钢制刮刀对靶材表面进行刮削加工,算术平均粗糙度(Ra)为1.6μm且十点平均粗糙度(Rz)为15μm,表面略比实施例1的粗糙,但未发现异常放电。
实施例3中,使用刃宽较实施例1窄的10mm的不锈钢制刮刀对靶材表面进行刮削加工,算术平均粗糙度(Ra)为1.2μm且十点平均粗糙度(Rz)为10μm,表面较实施例1的平坦,未发现异常放电。
实施例4中,使用刃宽较实施例1和实施例3窄的5mm的不锈钢制刮刀对靶材表面进行刮削加工,算术平均粗度(Ra)为0.8μm且十点平均粗糙度(Rz)为8μm,表面比实施例1和实施例3的光滑,未发现异常放电。
比较例1中,未进行靶材表面的刮削,算术平均粗糙度(Ra)为2μm且十点平均粗糙度(Rz)为20μm,较粗糙,异常放电也多达80次。
比较例2中,通过使用铣削加工代替使用刮刀的靶材表面的刮削加工而进行表面处理,因此算术平均粗糙度(Ra)为50μm且十点平均粗糙度(Rz)为150μm,较粗糙,异常放电也多达250次。

Claims (5)

1.一种铟靶材,其特征为,所述靶材表面的算术平均粗糙度(Ra)为1.6μm以下。
2.如权利要求1所述的铟靶材,其中,所述算术平均粗糙度(Ra)为1.2μm以下。
3.如权利要求1或2所述的铟靶材,其中,所述靶材表面的十点平均粗糙度(Rz)为15μm以下。
4.如权利要求3所述的铟靶材,其中,所述十点平均粗糙度(Rz)为10μm以下。
5.一种铟靶材的制造方法,其特征为,将铟原料熔铸后,使用刮刀进行刮削加工而制作如权利要求1至4中任意一项所述的铟靶材。
CN2011800048448A 2010-08-31 2011-05-12 铟靶材及其制造方法 Pending CN102652185A (zh)

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CN106574359A (zh) * 2014-07-03 2017-04-19 住友金属矿山株式会社 溅射用靶材及其制造方法
CN108165936A (zh) * 2017-12-21 2018-06-15 清远先导材料有限公司 制备铟靶材的方法
CN112030119A (zh) * 2020-08-27 2020-12-04 苏州思菲科新材料科技有限公司 一种铟管靶及其制备方法

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JP4948634B2 (ja) 2010-09-01 2012-06-06 Jx日鉱日石金属株式会社 インジウムターゲット及びその製造方法
JP5140169B2 (ja) 2011-03-01 2013-02-06 Jx日鉱日石金属株式会社 インジウムターゲット及びその製造方法
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JP5074628B1 (ja) 2012-01-05 2012-11-14 Jx日鉱日石金属株式会社 インジウム製スパッタリングターゲット及びその製造方法
KR20140054169A (ko) 2012-08-22 2014-05-08 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 인듐제 원통형 스퍼터링 타깃 및 그 제조 방법
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