CN102648514A - 制造具有植入侧壁的半导体器件的方法和由其制成的器件 - Google Patents

制造具有植入侧壁的半导体器件的方法和由其制成的器件 Download PDF

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Publication number
CN102648514A
CN102648514A CN2010800553654A CN201080055365A CN102648514A CN 102648514 A CN102648514 A CN 102648514A CN 2010800553654 A CN2010800553654 A CN 2010800553654A CN 201080055365 A CN201080055365 A CN 201080055365A CN 102648514 A CN102648514 A CN 102648514A
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China
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layer
channel layer
implanted
source
doping concentration
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CN2010800553654A
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English (en)
Chinese (zh)
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大卫·C·谢里登
安德鲁·里特诺尔
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Pi Co
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SS SC IP LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Junction Field-Effect Transistors (AREA)
CN2010800553654A 2009-12-08 2010-12-08 制造具有植入侧壁的半导体器件的方法和由其制成的器件 Pending CN102648514A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26752409P 2009-12-08 2009-12-08
US61/267,524 2009-12-08
PCT/US2010/059374 WO2011071973A2 (en) 2009-12-08 2010-12-08 Methods of making semiconductor devices having implanted sidewalls and devices made thereby

Publications (1)

Publication Number Publication Date
CN102648514A true CN102648514A (zh) 2012-08-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800553654A Pending CN102648514A (zh) 2009-12-08 2010-12-08 制造具有植入侧壁的半导体器件的方法和由其制成的器件

Country Status (8)

Country Link
US (1) US8466017B2 (https=)
EP (1) EP2510539A4 (https=)
JP (1) JP2013513252A (https=)
KR (1) KR20120091368A (https=)
CN (1) CN102648514A (https=)
AU (1) AU2010328256A1 (https=)
CA (1) CA2780459A1 (https=)
WO (1) WO2011071973A2 (https=)

Cited By (2)

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CN104599971A (zh) * 2013-10-30 2015-05-06 英飞凌科技股份有限公司 用于制造竖直半导体器件的方法和竖直半导体器件
CN109494253A (zh) * 2017-09-11 2019-03-19 三星电子株式会社 垂直场效应晶体管和包括其的半导体器件

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KR20120032531A (ko) * 2009-06-19 2012-04-05 에스에스 에스시 아이피, 엘엘시 이온주입 없이 ｖｊｆｅｔ와 ｂｊｔ를 제조하는 방법 및 그 장치
US9136116B2 (en) * 2011-08-04 2015-09-15 Avogy, Inc. Method and system for formation of P-N junctions in gallium nitride based electronics
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
CN103946978B (zh) * 2011-11-24 2017-03-01 夏普株式会社 半导体装置以及电子设备
US8969994B2 (en) 2012-08-14 2015-03-03 Avogy, Inc. Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back
US8937317B2 (en) 2012-12-28 2015-01-20 Avogy, Inc. Method and system for co-packaging gallium nitride electronics
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
US9136397B2 (en) 2013-05-31 2015-09-15 Infineon Technologies Ag Field-effect semiconductor device
JP6138619B2 (ja) * 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US8947154B1 (en) 2013-10-03 2015-02-03 Avogy, Inc. Method and system for operating gallium nitride electronics
US9324809B2 (en) 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
US9543290B2 (en) 2014-01-23 2017-01-10 International Business Machines Corporation Normally-off junction field-effect transistors and application to complementary circuits
KR101669987B1 (ko) * 2014-12-03 2016-10-27 서강대학교산학협력단 경사 이온 주입을 이용한 실리콘 카바이드 트렌치 모스 장벽 쇼트키 다이오드 및 그의 제조 방법
US10396215B2 (en) 2015-03-10 2019-08-27 United Silicon Carbide, Inc. Trench vertical JFET with improved threshold voltage control
US20160268446A1 (en) * 2015-03-10 2016-09-15 United Silicon Carbide, Inc. Trench vertical jfet with improved threshold voltage control
US9905645B2 (en) 2016-05-24 2018-02-27 Samsung Electronics Co., Ltd. Vertical field effect transistor having an elongated channel
WO2018048972A1 (en) * 2016-09-09 2018-03-15 United Silicon Carbide Inc. Trench vertical jfet with improved threshold voltage control
CN112909088B (zh) * 2021-01-25 2022-11-08 深圳大学 静电感应晶体管及其制备方法

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CN1503990A (zh) * 2001-03-28 2004-06-09 ͨ�ð뵼�幫˾ 具有减小导通电阻的双扩散场效应晶体管
US6821834B2 (en) * 2002-12-04 2004-11-23 Yoshiyuki Ando Ion implantation methods and transistor cell layout for fin type transistors
US20060220072A1 (en) * 2005-03-04 2006-10-05 Christopher Harris Vertical junction field effect transistor having an epitaxial gate
US20070187715A1 (en) * 2003-09-25 2007-08-16 Zhao Jian H Power junction field effect power transistor with highly vertical channel and uniform channel opening
US20090278177A1 (en) * 2008-05-08 2009-11-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

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CN1503990A (zh) * 2001-03-28 2004-06-09 ͨ�ð뵼�幫˾ 具有减小导通电阻的双扩散场效应晶体管
US6821834B2 (en) * 2002-12-04 2004-11-23 Yoshiyuki Ando Ion implantation methods and transistor cell layout for fin type transistors
US20070187715A1 (en) * 2003-09-25 2007-08-16 Zhao Jian H Power junction field effect power transistor with highly vertical channel and uniform channel opening
US20060220072A1 (en) * 2005-03-04 2006-10-05 Christopher Harris Vertical junction field effect transistor having an epitaxial gate
US20090278177A1 (en) * 2008-05-08 2009-11-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104599971A (zh) * 2013-10-30 2015-05-06 英飞凌科技股份有限公司 用于制造竖直半导体器件的方法和竖直半导体器件
CN104599971B (zh) * 2013-10-30 2018-01-19 英飞凌科技股份有限公司 用于制造竖直半导体器件的方法和竖直半导体器件
CN109494253A (zh) * 2017-09-11 2019-03-19 三星电子株式会社 垂直场效应晶体管和包括其的半导体器件
US10944003B2 (en) 2017-09-11 2021-03-09 Samsung Electronics Co., Ltd. Vertical field effect transistor and semiconductor device including the same
CN109494253B (zh) * 2017-09-11 2021-04-06 三星电子株式会社 垂直场效应晶体管和包括其的半导体器件

Also Published As

Publication number Publication date
US8466017B2 (en) 2013-06-18
CA2780459A1 (en) 2011-06-16
AU2010328256A1 (en) 2012-06-21
WO2011071973A3 (en) 2011-10-27
WO2011071973A2 (en) 2011-06-16
EP2510539A4 (en) 2013-07-31
JP2013513252A (ja) 2013-04-18
EP2510539A2 (en) 2012-10-17
KR20120091368A (ko) 2012-08-17
US20110133212A1 (en) 2011-06-09

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