CN102623495B - 一种多掺杂口袋结构的隧穿场效应晶体管及其制备方法 - Google Patents
一种多掺杂口袋结构的隧穿场效应晶体管及其制备方法 Download PDFInfo
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- CN102623495B CN102623495B CN201210101859.2A CN201210101859A CN102623495B CN 102623495 B CN102623495 B CN 102623495B CN 201210101859 A CN201210101859 A CN 201210101859A CN 102623495 B CN102623495 B CN 102623495B
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- 230000005641 tunneling Effects 0.000 title claims abstract description 37
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- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
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- 229910052710 silicon Inorganic materials 0.000 claims description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
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- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical compound FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052721 tungsten Inorganic materials 0.000 claims description 4
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
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- 238000007254 oxidation reaction Methods 0.000 claims description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
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- 238000005530 etching Methods 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/021—Manufacture or treatment of gated diodes, e.g. field-controlled diodes [FCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
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- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
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Claims (10)
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CN201210101859.2A CN102623495B (zh) | 2012-04-09 | 2012-04-09 | 一种多掺杂口袋结构的隧穿场效应晶体管及其制备方法 |
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CN201210101859.2A CN102623495B (zh) | 2012-04-09 | 2012-04-09 | 一种多掺杂口袋结构的隧穿场效应晶体管及其制备方法 |
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CN102623495A CN102623495A (zh) | 2012-08-01 |
CN102623495B true CN102623495B (zh) | 2014-04-30 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150200289A1 (en) * | 2014-01-16 | 2015-07-16 | Samsung Electronics Co., Ltd. | Tunneling field effect transistor |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104269439B (zh) * | 2014-09-22 | 2017-01-25 | 北京大学 | 一种嵌入层异质结隧穿场效应晶体管及其制备方法 |
WO2017079928A1 (zh) * | 2015-11-11 | 2017-05-18 | 华为技术有限公司 | 隧穿场效应晶体管及其制备方法 |
US10734511B2 (en) * | 2016-03-31 | 2020-08-04 | Intel Corporation | High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer |
WO2018094711A1 (zh) * | 2016-11-26 | 2018-05-31 | 华为技术有限公司 | 隧穿场效应晶体管及其制作方法 |
CN109075193A (zh) * | 2017-02-16 | 2018-12-21 | 华为技术有限公司 | 制作隧穿场效应晶体管的方法 |
WO2018161206A1 (zh) * | 2017-03-06 | 2018-09-13 | 华为技术有限公司 | 制作隧穿场效应晶体管的方法与制作反相器的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1393915A (zh) * | 2001-06-26 | 2003-01-29 | 旺宏电子股份有限公司 | 金氧半导体晶体管的制造方法 |
CN101894864A (zh) * | 2009-05-22 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | 双栅极场效应晶体管 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US7777282B2 (en) * | 2008-08-13 | 2010-08-17 | Intel Corporation | Self-aligned tunneling pocket in field-effect transistors and processes to form same |
US8309989B2 (en) * | 2010-08-18 | 2012-11-13 | Purdue Research Foundation | Tunneling field-effect transistor with low leakage current |
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2012
- 2012-04-09 CN CN201210101859.2A patent/CN102623495B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1393915A (zh) * | 2001-06-26 | 2003-01-29 | 旺宏电子股份有限公司 | 金氧半导体晶体管的制造方法 |
CN101894864A (zh) * | 2009-05-22 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | 双栅极场效应晶体管 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150200289A1 (en) * | 2014-01-16 | 2015-07-16 | Samsung Electronics Co., Ltd. | Tunneling field effect transistor |
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