CN102473810B - 光电子半导体器件和用于制造无机光电子半导体器件的方法 - Google Patents

光电子半导体器件和用于制造无机光电子半导体器件的方法 Download PDF

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Publication number
CN102473810B
CN102473810B CN201080029752.0A CN201080029752A CN102473810B CN 102473810 B CN102473810 B CN 102473810B CN 201080029752 A CN201080029752 A CN 201080029752A CN 102473810 B CN102473810 B CN 102473810B
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China
Prior art keywords
layer
metal mirror
layer sequence
semiconductor layer
encapsulation layer
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Expired - Fee Related
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CN201080029752.0A
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Chinese (zh)
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CN102473810A (zh
Inventor
卢茨·赫佩尔
诺温·文马尔姆
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN201080029752.0A 2009-07-17 2010-06-10 光电子半导体器件和用于制造无机光电子半导体器件的方法 Expired - Fee Related CN102473810B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009033686A DE102009033686A1 (de) 2009-07-17 2009-07-17 Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines anorganischen optoelektronischen Halbleiterbauteils
DE102009033686.9 2009-07-17
PCT/EP2010/058160 WO2011006719A1 (de) 2009-07-17 2010-06-10 Optoelektronisches halbleiterbauteil und verfahren zur herstellung eines anorganischen optoelektronischen halbleiterbauteils

Publications (2)

Publication Number Publication Date
CN102473810A CN102473810A (zh) 2012-05-23
CN102473810B true CN102473810B (zh) 2015-09-23

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CN201080029752.0A Expired - Fee Related CN102473810B (zh) 2009-07-17 2010-06-10 光电子半导体器件和用于制造无机光电子半导体器件的方法

Country Status (8)

Country Link
US (1) US8698178B2 (enExample)
EP (1) EP2454763B1 (enExample)
JP (1) JP5755646B2 (enExample)
KR (1) KR101614106B1 (enExample)
CN (1) CN102473810B (enExample)
DE (1) DE102009033686A1 (enExample)
TW (1) TWI423486B (enExample)
WO (1) WO2011006719A1 (enExample)

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DE102010009717A1 (de) 2010-03-01 2011-09-01 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
WO2012035135A1 (de) 2010-09-19 2012-03-22 Osram Opto Semiconductors Gmbh Halbleiterchip und verfahren zu dessen herstellung
DE102011010504A1 (de) * 2011-02-07 2012-08-09 Osram Opto Semiconductors Gmbh Optoelektrischer Halbleiterchip
DE102011010503A1 (de) * 2011-02-07 2012-08-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102011011140A1 (de) 2011-02-14 2012-08-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
DE102011016302A1 (de) * 2011-04-07 2012-10-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US9196803B2 (en) * 2011-04-11 2015-11-24 Nichia Corporation Semiconductor light emitting element and method for manufacturing the same
TWI548118B (zh) * 2011-07-12 2016-09-01 廣鎵光電股份有限公司 發光元件及其製作方法
TWI488337B (zh) * 2011-07-12 2015-06-11 Huga Optotech Inc 發光元件及其製作方法
DE102011112000B4 (de) 2011-08-31 2023-11-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8333860B1 (en) 2011-11-18 2012-12-18 LuxVue Technology Corporation Method of transferring a micro device
US8809875B2 (en) * 2011-11-18 2014-08-19 LuxVue Technology Corporation Micro light emitting diode
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
DE102012101889A1 (de) * 2012-03-06 2013-09-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP6135213B2 (ja) * 2012-04-18 2017-05-31 日亜化学工業株式会社 半導体発光素子
DE102012108879B4 (de) * 2012-09-20 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit mehreren nebeneinander angeordneten aktiven Bereichen
DE102013100818B4 (de) * 2013-01-28 2023-07-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102013107967B4 (de) * 2013-07-25 2021-05-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips
DE102014111482B4 (de) * 2014-08-12 2025-12-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN104659165B (zh) * 2015-02-11 2018-09-25 山东浪潮华光光电子股份有限公司 一种GaN基发光二极管芯片的制备方法
DE102015112280A1 (de) * 2015-07-28 2017-02-02 Osram Opto Semiconductors Gmbh Bauelement mit einem metallischen Träger und Verfahren zur Herstellung von Bauelementen
DE102015118041A1 (de) 2015-10-22 2017-04-27 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
DE102016105056A1 (de) 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102016106928A1 (de) * 2016-04-14 2017-10-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102018107667A1 (de) 2018-03-15 2019-09-19 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip
US11799058B2 (en) 2018-03-15 2023-10-24 Osram Oled Gmbh Optoelectronic semiconductor chip

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Also Published As

Publication number Publication date
EP2454763B1 (de) 2017-01-18
KR101614106B1 (ko) 2016-04-20
TWI423486B (zh) 2014-01-11
JP5755646B2 (ja) 2015-07-29
US8698178B2 (en) 2014-04-15
JP2012533873A (ja) 2012-12-27
KR20120052327A (ko) 2012-05-23
DE102009033686A1 (de) 2011-01-20
US20120098016A1 (en) 2012-04-26
WO2011006719A1 (de) 2011-01-20
TW201115793A (en) 2011-05-01
CN102473810A (zh) 2012-05-23
EP2454763A1 (de) 2012-05-23

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