CN102471910B - 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物 - Google Patents

用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物 Download PDF

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Publication number
CN102471910B
CN102471910B CN201080033648.9A CN201080033648A CN102471910B CN 102471910 B CN102471910 B CN 102471910B CN 201080033648 A CN201080033648 A CN 201080033648A CN 102471910 B CN102471910 B CN 102471910B
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China
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composition according
copper
alkylene oxide
additive
oxide
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CN201080033648.9A
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English (en)
Chinese (zh)
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CN102471910A (zh
Inventor
C·勒格尔-格普费特
R·B·雷特尔
D·迈耶
A·哈格
C·埃姆内特
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Paints Or Removers (AREA)
CN201080033648.9A 2009-07-30 2010-07-19 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物 Active CN102471910B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30
US61/229,809 2009-07-30
PCT/EP2010/060375 WO2011012475A1 (en) 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
CN102471910A CN102471910A (zh) 2012-05-23
CN102471910B true CN102471910B (zh) 2016-01-20

Family

ID=42733749

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080033648.9A Active CN102471910B (zh) 2009-07-30 2010-07-19 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物

Country Status (11)

Country Link
US (1) US9617647B2 (https=)
EP (1) EP2459779B1 (https=)
JP (2) JP5775077B2 (https=)
KR (1) KR101738708B1 (https=)
CN (1) CN102471910B (https=)
IL (1) IL217234A (https=)
MY (1) MY160150A (https=)
RU (1) RU2539895C2 (https=)
SG (2) SG10201404301WA (https=)
TW (1) TWI515341B (https=)
WO (1) WO2011012475A1 (https=)

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MY170653A (en) 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
US9631292B2 (en) 2011-06-01 2017-04-25 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
ES2681836T3 (es) * 2015-09-10 2018-09-17 Atotech Deutschland Gmbh Composición de baño para chapado de cobre
CN110100048B (zh) * 2016-12-20 2022-06-21 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
CN111344438B (zh) * 2017-11-20 2025-06-06 巴斯夫欧洲公司 用于电镀钴的包含流平剂的组合物
ES2881029T3 (es) * 2018-01-09 2021-11-26 Atotech Deutschland Gmbh Aditivo de ureileno, su uso y un método para su preparación
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
KR20220164496A (ko) 2020-04-03 2022-12-13 바스프 에스이 폴리아미노아미드 유형 레벨링제를 포함하는 구리 범프 전착용 조성물
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
CN115720598A (zh) 2020-07-13 2023-02-28 巴斯夫欧洲公司 用于在钴晶种上电镀铜的组合物
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
JP7787368B1 (ja) * 2024-06-25 2025-12-16 Ykk株式会社 硫酸銅めっき液
WO2026003954A1 (ja) * 2024-06-25 2026-01-02 Ykk株式会社 硫酸銅めっき液
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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CN1680629A (zh) * 2004-03-09 2005-10-12 台湾积体电路制造股份有限公司 用于铜电镀的电解液及将金属电镀至电镀表面的方法
CN101416292A (zh) * 2006-02-02 2009-04-22 恩索恩公司 微电子中的铜电沉积

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WO2002103751A2 (en) * 2000-11-20 2002-12-27 Enthone Inc. Electroplating chemistry for the cu filling of submicron features of vlsi/ulsi interconnect
CN1506501A (zh) * 2002-11-21 2004-06-23 ϣ 电镀液
CN1680629A (zh) * 2004-03-09 2005-10-12 台湾积体电路制造股份有限公司 用于铜电镀的电解液及将金属电镀至电镀表面的方法
CN101416292A (zh) * 2006-02-02 2009-04-22 恩索恩公司 微电子中的铜电沉积

Also Published As

Publication number Publication date
RU2539895C2 (ru) 2015-01-27
JP6117284B2 (ja) 2017-04-19
EP2459779A1 (en) 2012-06-06
MY160150A (en) 2017-02-28
IL217234A (en) 2016-05-31
IL217234A0 (en) 2012-02-29
TWI515341B (zh) 2016-01-01
US20120118750A1 (en) 2012-05-17
KR101738708B1 (ko) 2017-05-22
JP2016029210A (ja) 2016-03-03
SG177418A1 (en) 2012-02-28
KR20120049237A (ko) 2012-05-16
JP2013500395A (ja) 2013-01-07
EP2459779B1 (en) 2015-09-09
WO2011012475A1 (en) 2011-02-03
US9617647B2 (en) 2017-04-11
CN102471910A (zh) 2012-05-23
TW201111558A (en) 2011-04-01
JP5775077B2 (ja) 2015-09-09
SG10201404301WA (en) 2014-09-26
RU2012107130A (ru) 2013-09-10

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