CN102471910B - 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物 - Google Patents

用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物 Download PDF

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Publication number
CN102471910B
CN102471910B CN201080033648.9A CN201080033648A CN102471910B CN 102471910 B CN102471910 B CN 102471910B CN 201080033648 A CN201080033648 A CN 201080033648A CN 102471910 B CN102471910 B CN 102471910B
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China
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composition according
copper
alkylene oxide
additive
oxide
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CN201080033648.9A
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English (en)
Chinese (zh)
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CN102471910A (zh
Inventor
C·勒格尔-格普费特
R·B·雷特尔
D·迈耶
A·哈格
C·埃姆内特
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Paints Or Removers (AREA)
CN201080033648.9A 2009-07-30 2010-07-19 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物 Active CN102471910B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30
US61/229,809 2009-07-30
PCT/EP2010/060375 WO2011012475A1 (en) 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
CN102471910A CN102471910A (zh) 2012-05-23
CN102471910B true CN102471910B (zh) 2016-01-20

Family

ID=42733749

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080033648.9A Active CN102471910B (zh) 2009-07-30 2010-07-19 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物

Country Status (11)

Country Link
US (1) US9617647B2 (https=)
EP (1) EP2459779B1 (https=)
JP (2) JP5775077B2 (https=)
KR (1) KR101738708B1 (https=)
CN (1) CN102471910B (https=)
IL (1) IL217234A (https=)
MY (1) MY160150A (https=)
RU (1) RU2539895C2 (https=)
SG (2) SG177418A1 (https=)
TW (1) TWI515341B (https=)
WO (1) WO2011012475A1 (https=)

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EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
ES2681836T3 (es) 2015-09-10 2018-09-17 Atotech Deutschland Gmbh Composición de baño para chapado de cobre
US11926918B2 (en) * 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3714085B1 (en) * 2017-11-20 2023-08-09 Basf Se Composition for cobalt electroplating comprising leveling agent
ES2881029T3 (es) * 2018-01-09 2021-11-26 Atotech Deutschland Gmbh Aditivo de ureileno, su uso y un método para su preparación
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
EP4179132B1 (en) 2020-07-13 2024-09-25 Basf Se Composition for copper electroplating on a cobalt seed
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition
CN121693598A (zh) 2023-08-03 2026-03-17 巴斯夫欧洲公司 用于在金属晶种上进行铜电镀的组合物
JP7787368B1 (ja) * 2024-06-25 2025-12-16 Ykk株式会社 硫酸銅めっき液
WO2026003954A1 (ja) * 2024-06-25 2026-01-02 Ykk株式会社 硫酸銅めっき液
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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CN1506501A (zh) * 2002-11-21 2004-06-23 ϣ 电镀液
CN1680629A (zh) * 2004-03-09 2005-10-12 台湾积体电路制造股份有限公司 用于铜电镀的电解液及将金属电镀至电镀表面的方法
CN101416292A (zh) * 2006-02-02 2009-04-22 恩索恩公司 微电子中的铜电沉积

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WO2002103751A2 (en) * 2000-11-20 2002-12-27 Enthone Inc. Electroplating chemistry for the cu filling of submicron features of vlsi/ulsi interconnect
CN1506501A (zh) * 2002-11-21 2004-06-23 ϣ 电镀液
CN1680629A (zh) * 2004-03-09 2005-10-12 台湾积体电路制造股份有限公司 用于铜电镀的电解液及将金属电镀至电镀表面的方法
CN101416292A (zh) * 2006-02-02 2009-04-22 恩索恩公司 微电子中的铜电沉积

Also Published As

Publication number Publication date
CN102471910A (zh) 2012-05-23
SG177418A1 (en) 2012-02-28
SG10201404301WA (en) 2014-09-26
JP2013500395A (ja) 2013-01-07
EP2459779B1 (en) 2015-09-09
JP2016029210A (ja) 2016-03-03
RU2539895C2 (ru) 2015-01-27
JP6117284B2 (ja) 2017-04-19
TWI515341B (zh) 2016-01-01
EP2459779A1 (en) 2012-06-06
RU2012107130A (ru) 2013-09-10
IL217234A0 (en) 2012-02-29
TW201111558A (en) 2011-04-01
KR101738708B1 (ko) 2017-05-22
US20120118750A1 (en) 2012-05-17
IL217234A (en) 2016-05-31
JP5775077B2 (ja) 2015-09-09
MY160150A (en) 2017-02-28
KR20120049237A (ko) 2012-05-16
WO2011012475A1 (en) 2011-02-03
US9617647B2 (en) 2017-04-11

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