SG177418A1 - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents
Composition for metal plating comprising suppressing agent for void free submicron feature filling Download PDFInfo
- Publication number
- SG177418A1 SG177418A1 SG2011097185A SG2011097185A SG177418A1 SG 177418 A1 SG177418 A1 SG 177418A1 SG 2011097185 A SG2011097185 A SG 2011097185A SG 2011097185 A SG2011097185 A SG 2011097185A SG 177418 A1 SG177418 A1 SG 177418A1
- Authority
- SG
- Singapore
- Prior art keywords
- alkylene oxide
- composition according
- oxide
- copper
- anyone
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
- C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polyethers (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22980909P | 2009-07-30 | 2009-07-30 | |
| PCT/EP2010/060375 WO2011012475A1 (en) | 2009-07-30 | 2010-07-19 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG177418A1 true SG177418A1 (en) | 2012-02-28 |
Family
ID=42733749
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011097185A SG177418A1 (en) | 2009-07-30 | 2010-07-19 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| SG10201404301WA SG10201404301WA (en) | 2009-07-30 | 2010-07-19 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201404301WA SG10201404301WA (en) | 2009-07-30 | 2010-07-19 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9617647B2 (https=) |
| EP (1) | EP2459779B1 (https=) |
| JP (2) | JP5775077B2 (https=) |
| KR (1) | KR101738708B1 (https=) |
| CN (1) | CN102471910B (https=) |
| IL (1) | IL217234A (https=) |
| MY (1) | MY160150A (https=) |
| RU (1) | RU2539895C2 (https=) |
| SG (2) | SG177418A1 (https=) |
| TW (1) | TWI515341B (https=) |
| WO (1) | WO2011012475A1 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2655457B1 (en) | 2010-12-21 | 2019-04-10 | Basf Se | Composition for metal electroplating comprising leveling agent |
| CN103547631B (zh) | 2011-06-01 | 2016-07-06 | 巴斯夫欧洲公司 | 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物 |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| US20130133243A1 (en) | 2011-06-28 | 2013-05-30 | Basf Se | Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants |
| RU2015121797A (ru) | 2012-11-09 | 2017-01-10 | Басф Се | Композиция для электролитического осаждения металла, содержащая выравнивающий агент |
| ES2681836T3 (es) | 2015-09-10 | 2018-09-17 | Atotech Deutschland Gmbh | Composición de baño para chapado de cobre |
| US11926918B2 (en) * | 2016-12-20 | 2024-03-12 | Basf Se | Composition for metal plating comprising suppressing agent for void free filing |
| CN107604414B (zh) * | 2017-08-22 | 2020-03-24 | 珠海市奥美伦精细化工有限公司 | 一种铝及铝合金阳极氧化高温无镍封闭剂 |
| US11387108B2 (en) | 2017-09-04 | 2022-07-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP3714085B1 (en) * | 2017-11-20 | 2023-08-09 | Basf Se | Composition for cobalt electroplating comprising leveling agent |
| ES2881029T3 (es) * | 2018-01-09 | 2021-11-26 | Atotech Deutschland Gmbh | Aditivo de ureileno, su uso y un método para su preparación |
| CN114450438A (zh) | 2019-09-27 | 2022-05-06 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含流平剂的组合物 |
| EP4034696A1 (en) | 2019-09-27 | 2022-08-03 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| JP2023520530A (ja) | 2020-04-03 | 2023-05-17 | ビーエーエスエフ ソシエタス・ヨーロピア | ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物 |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| EP4179132B1 (en) | 2020-07-13 | 2024-09-25 | Basf Se | Composition for copper electroplating on a cobalt seed |
| KR20240070557A (ko) | 2021-10-01 | 2024-05-21 | 바스프 에스이 | 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물 |
| US20250388725A1 (en) | 2022-07-07 | 2025-12-25 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| WO2024132828A1 (en) | 2022-12-19 | 2024-06-27 | Basf Se | A composition for copper nanotwin electrodeposition |
| CN121693598A (zh) | 2023-08-03 | 2026-03-17 | 巴斯夫欧洲公司 | 用于在金属晶种上进行铜电镀的组合物 |
| JP7787368B1 (ja) * | 2024-06-25 | 2025-12-16 | Ykk株式会社 | 硫酸銅めっき液 |
| WO2026003954A1 (ja) * | 2024-06-25 | 2026-01-02 | Ykk株式会社 | 硫酸銅めっき液 |
| WO2026037751A1 (en) | 2024-08-16 | 2026-02-19 | Basf Se | Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB602591A (en) | 1945-02-12 | 1948-05-31 | Du Pont | Improvements in or relating to the electro-deposition of metals |
| GB1221688A (en) * | 1968-03-09 | 1971-02-03 | Geigy Uk Ltd | Tin electroplating bath and process |
| GB2064585B (en) * | 1979-11-19 | 1983-11-09 | Enthone | Acid zinc electro plating solutions and methods utilizing ethoxylated/propoxylated polyhydric alcohols |
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| SU1035097A1 (ru) * | 1981-07-20 | 1983-08-15 | Днепропетровский Ордена Трудового Красного Знамени Государственный Университет Им.300-Летия Воссоединения Украины С Россией | Электролит меднени |
| US4430490A (en) * | 1982-08-10 | 1984-02-07 | Ppg Industries, Inc. | Polyether polyols and their method of preparation |
| JPS59182986A (ja) * | 1983-04-01 | 1984-10-17 | Keigo Obata | スズ、鉛及びすず−鉛合金メツキ浴 |
| JPS62182295A (ja) * | 1985-08-07 | 1987-08-10 | Daiwa Tokushu Kk | 銅メツキ浴組成物 |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| JPH0641581A (ja) * | 1992-07-23 | 1994-02-15 | Seiko Epson Corp | コンタクトレンズ用親水性洗浄剤 |
| JP3244866B2 (ja) * | 1993-05-25 | 2002-01-07 | 株式会社大和化成研究所 | すず−鉛合金めっき浴 |
| US6682642B2 (en) | 2000-10-13 | 2004-01-27 | Shipley Company, L.L.C. | Seed repair and electroplating bath |
| US6776893B1 (en) | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
| EP1422320A1 (en) * | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| KR100692159B1 (ko) * | 2002-12-03 | 2007-03-12 | 아사히 가세이 가부시키가이샤 | 산화구리 초미립자 |
| US20050133376A1 (en) * | 2003-12-19 | 2005-06-23 | Opaskar Vincent C. | Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom |
| US20050199507A1 (en) * | 2004-03-09 | 2005-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical structures and compositions of ECP additives to reduce pit defects |
| EP1819848A1 (en) * | 2004-11-29 | 2007-08-22 | Technic, Incorporated | Near neutral ph tin electroplating solution |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2282682C1 (ru) * | 2005-04-28 | 2006-08-27 | Российский химико-технологический университет им. Д.И. Менделеева | Электролит и способ меднения |
| US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
| JP2008266722A (ja) * | 2007-04-20 | 2008-11-06 | Ebara Udylite Kk | パルス銅めっき浴用添加剤およびこれを用いたパルス銅めっき浴 |
| SG10201404394QA (en) * | 2009-07-30 | 2014-10-30 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filing |
-
2010
- 2010-07-19 RU RU2012107130/02A patent/RU2539895C2/ru not_active IP Right Cessation
- 2010-07-19 MY MYPI2012000018A patent/MY160150A/en unknown
- 2010-07-19 CN CN201080033648.9A patent/CN102471910B/zh active Active
- 2010-07-19 SG SG2011097185A patent/SG177418A1/en unknown
- 2010-07-19 JP JP2012522097A patent/JP5775077B2/ja active Active
- 2010-07-19 KR KR1020127001758A patent/KR101738708B1/ko active Active
- 2010-07-19 WO PCT/EP2010/060375 patent/WO2011012475A1/en not_active Ceased
- 2010-07-19 US US13/384,732 patent/US9617647B2/en active Active
- 2010-07-19 SG SG10201404301WA patent/SG10201404301WA/en unknown
- 2010-07-19 EP EP10734120.8A patent/EP2459779B1/en active Active
- 2010-07-30 TW TW099125505A patent/TWI515341B/zh active
-
2011
- 2011-12-27 IL IL217234A patent/IL217234A/en active IP Right Grant
-
2015
- 2015-07-01 JP JP2015132392A patent/JP6117284B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102471910A (zh) | 2012-05-23 |
| SG10201404301WA (en) | 2014-09-26 |
| JP2013500395A (ja) | 2013-01-07 |
| EP2459779B1 (en) | 2015-09-09 |
| JP2016029210A (ja) | 2016-03-03 |
| RU2539895C2 (ru) | 2015-01-27 |
| JP6117284B2 (ja) | 2017-04-19 |
| TWI515341B (zh) | 2016-01-01 |
| EP2459779A1 (en) | 2012-06-06 |
| RU2012107130A (ru) | 2013-09-10 |
| IL217234A0 (en) | 2012-02-29 |
| CN102471910B (zh) | 2016-01-20 |
| TW201111558A (en) | 2011-04-01 |
| KR101738708B1 (ko) | 2017-05-22 |
| US20120118750A1 (en) | 2012-05-17 |
| IL217234A (en) | 2016-05-31 |
| JP5775077B2 (ja) | 2015-09-09 |
| MY160150A (en) | 2017-02-28 |
| KR20120049237A (ko) | 2012-05-16 |
| WO2011012475A1 (en) | 2011-02-03 |
| US9617647B2 (en) | 2017-04-11 |
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