MY160150A - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents

Composition for metal plating comprising suppressing agent for void free submicron feature filling

Info

Publication number
MY160150A
MY160150A MYPI2012000018A MYPI2012000018A MY160150A MY 160150 A MY160150 A MY 160150A MY PI2012000018 A MYPI2012000018 A MY PI2012000018A MY PI2012000018 A MYPI2012000018 A MY PI2012000018A MY 160150 A MY160150 A MY 160150A
Authority
MY
Malaysia
Prior art keywords
alkylene oxide
composition
metal plating
suppressing agent
void free
Prior art date
Application number
MYPI2012000018A
Other languages
English (en)
Inventor
Cornelia Röger-Göpfert
Roman Benedikt Raether
Dieter Mayer
Alexandra Haag
Charlotte Emnet
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of MY160150A publication Critical patent/MY160150A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • C25D3/40Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Paints Or Removers (AREA)
MYPI2012000018A 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling MY160150A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30

Publications (1)

Publication Number Publication Date
MY160150A true MY160150A (en) 2017-02-28

Family

ID=42733749

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012000018A MY160150A (en) 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Country Status (11)

Country Link
US (1) US9617647B2 (https=)
EP (1) EP2459779B1 (https=)
JP (2) JP5775077B2 (https=)
KR (1) KR101738708B1 (https=)
CN (1) CN102471910B (https=)
IL (1) IL217234A (https=)
MY (1) MY160150A (https=)
RU (1) RU2539895C2 (https=)
SG (2) SG177418A1 (https=)
TW (1) TWI515341B (https=)
WO (1) WO2011012475A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
ES2681836T3 (es) 2015-09-10 2018-09-17 Atotech Deutschland Gmbh Composición de baño para chapado de cobre
US11926918B2 (en) * 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3714085B1 (en) * 2017-11-20 2023-08-09 Basf Se Composition for cobalt electroplating comprising leveling agent
ES2881029T3 (es) * 2018-01-09 2021-11-26 Atotech Deutschland Gmbh Aditivo de ureileno, su uso y un método para su preparación
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
EP4179132B1 (en) 2020-07-13 2024-09-25 Basf Se Composition for copper electroplating on a cobalt seed
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition
CN121693598A (zh) 2023-08-03 2026-03-17 巴斯夫欧洲公司 用于在金属晶种上进行铜电镀的组合物
JP7787368B1 (ja) * 2024-06-25 2025-12-16 Ykk株式会社 硫酸銅めっき液
WO2026003954A1 (ja) * 2024-06-25 2026-01-02 Ykk株式会社 硫酸銅めっき液
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB602591A (en) 1945-02-12 1948-05-31 Du Pont Improvements in or relating to the electro-deposition of metals
GB1221688A (en) * 1968-03-09 1971-02-03 Geigy Uk Ltd Tin electroplating bath and process
GB2064585B (en) * 1979-11-19 1983-11-09 Enthone Acid zinc electro plating solutions and methods utilizing ethoxylated/propoxylated polyhydric alcohols
US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
SU1035097A1 (ru) * 1981-07-20 1983-08-15 Днепропетровский Ордена Трудового Красного Знамени Государственный Университет Им.300-Летия Воссоединения Украины С Россией Электролит меднени
US4430490A (en) * 1982-08-10 1984-02-07 Ppg Industries, Inc. Polyether polyols and their method of preparation
JPS59182986A (ja) * 1983-04-01 1984-10-17 Keigo Obata スズ、鉛及びすず−鉛合金メツキ浴
JPS62182295A (ja) * 1985-08-07 1987-08-10 Daiwa Tokushu Kk 銅メツキ浴組成物
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
JPH0641581A (ja) * 1992-07-23 1994-02-15 Seiko Epson Corp コンタクトレンズ用親水性洗浄剤
JP3244866B2 (ja) * 1993-05-25 2002-01-07 株式会社大和化成研究所 すず−鉛合金めっき浴
US6682642B2 (en) 2000-10-13 2004-01-27 Shipley Company, L.L.C. Seed repair and electroplating bath
US6776893B1 (en) 2000-11-20 2004-08-17 Enthone Inc. Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect
EP1422320A1 (en) * 2002-11-21 2004-05-26 Shipley Company, L.L.C. Copper electroplating bath
KR100692159B1 (ko) * 2002-12-03 2007-03-12 아사히 가세이 가부시키가이샤 산화구리 초미립자
US20050133376A1 (en) * 2003-12-19 2005-06-23 Opaskar Vincent C. Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom
US20050199507A1 (en) * 2004-03-09 2005-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical structures and compositions of ECP additives to reduce pit defects
EP1819848A1 (en) * 2004-11-29 2007-08-22 Technic, Incorporated Near neutral ph tin electroplating solution
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
RU2282682C1 (ru) * 2005-04-28 2006-08-27 Российский химико-технологический университет им. Д.И. Менделеева Электролит и способ меднения
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
JP2008266722A (ja) * 2007-04-20 2008-11-06 Ebara Udylite Kk パルス銅めっき浴用添加剤およびこれを用いたパルス銅めっき浴
SG10201404394QA (en) * 2009-07-30 2014-10-30 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filing

Also Published As

Publication number Publication date
CN102471910A (zh) 2012-05-23
SG177418A1 (en) 2012-02-28
SG10201404301WA (en) 2014-09-26
JP2013500395A (ja) 2013-01-07
EP2459779B1 (en) 2015-09-09
JP2016029210A (ja) 2016-03-03
RU2539895C2 (ru) 2015-01-27
JP6117284B2 (ja) 2017-04-19
TWI515341B (zh) 2016-01-01
EP2459779A1 (en) 2012-06-06
RU2012107130A (ru) 2013-09-10
IL217234A0 (en) 2012-02-29
CN102471910B (zh) 2016-01-20
TW201111558A (en) 2011-04-01
KR101738708B1 (ko) 2017-05-22
US20120118750A1 (en) 2012-05-17
IL217234A (en) 2016-05-31
JP5775077B2 (ja) 2015-09-09
KR20120049237A (ko) 2012-05-16
WO2011012475A1 (en) 2011-02-03
US9617647B2 (en) 2017-04-11

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