KR101738708B1 - 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물 - Google Patents

서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물 Download PDF

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KR101738708B1
KR101738708B1 KR1020127001758A KR20127001758A KR101738708B1 KR 101738708 B1 KR101738708 B1 KR 101738708B1 KR 1020127001758 A KR1020127001758 A KR 1020127001758A KR 20127001758 A KR20127001758 A KR 20127001758A KR 101738708 B1 KR101738708 B1 KR 101738708B1
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South Korea
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copper
composition
alkylene oxide
substrate
oxide
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KR20120049237A (ko
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코르넬리아 뢰거-괴페르트
로만 베네딕트 레테르
디터 마이어
알렉산드라 하크
샤를로테 엠네트
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Paints Or Removers (AREA)
KR1020127001758A 2009-07-30 2010-07-19 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물 Active KR101738708B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30
US61/229,809 2009-07-30
PCT/EP2010/060375 WO2011012475A1 (en) 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
KR20120049237A KR20120049237A (ko) 2012-05-16
KR101738708B1 true KR101738708B1 (ko) 2017-05-22

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KR1020127001758A Active KR101738708B1 (ko) 2009-07-30 2010-07-19 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물

Country Status (11)

Country Link
US (1) US9617647B2 (https=)
EP (1) EP2459779B1 (https=)
JP (2) JP5775077B2 (https=)
KR (1) KR101738708B1 (https=)
CN (1) CN102471910B (https=)
IL (1) IL217234A (https=)
MY (1) MY160150A (https=)
RU (1) RU2539895C2 (https=)
SG (2) SG177418A1 (https=)
TW (1) TWI515341B (https=)
WO (1) WO2011012475A1 (https=)

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EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
ES2681836T3 (es) 2015-09-10 2018-09-17 Atotech Deutschland Gmbh Composición de baño para chapado de cobre
US11926918B2 (en) * 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3714085B1 (en) * 2017-11-20 2023-08-09 Basf Se Composition for cobalt electroplating comprising leveling agent
ES2881029T3 (es) * 2018-01-09 2021-11-26 Atotech Deutschland Gmbh Aditivo de ureileno, su uso y un método para su preparación
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
EP4179132B1 (en) 2020-07-13 2024-09-25 Basf Se Composition for copper electroplating on a cobalt seed
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition
CN121693598A (zh) 2023-08-03 2026-03-17 巴斯夫欧洲公司 用于在金属晶种上进行铜电镀的组合物
JP7787368B1 (ja) * 2024-06-25 2025-12-16 Ykk株式会社 硫酸銅めっき液
WO2026003954A1 (ja) * 2024-06-25 2026-01-02 Ykk株式会社 硫酸銅めっき液
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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WO2002103751A2 (en) 2000-11-20 2002-12-27 Enthone Inc. Electroplating chemistry for the cu filling of submicron features of vlsi/ulsi interconnect
US20060098065A1 (en) 2002-12-03 2006-05-11 Mutsuhiro Maruyama Copper oxide ultrafine particle
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method

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WO2002103751A2 (en) 2000-11-20 2002-12-27 Enthone Inc. Electroplating chemistry for the cu filling of submicron features of vlsi/ulsi interconnect
US20060098065A1 (en) 2002-12-03 2006-05-11 Mutsuhiro Maruyama Copper oxide ultrafine particle
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method

Also Published As

Publication number Publication date
CN102471910A (zh) 2012-05-23
SG177418A1 (en) 2012-02-28
SG10201404301WA (en) 2014-09-26
JP2013500395A (ja) 2013-01-07
EP2459779B1 (en) 2015-09-09
JP2016029210A (ja) 2016-03-03
RU2539895C2 (ru) 2015-01-27
JP6117284B2 (ja) 2017-04-19
TWI515341B (zh) 2016-01-01
EP2459779A1 (en) 2012-06-06
RU2012107130A (ru) 2013-09-10
IL217234A0 (en) 2012-02-29
CN102471910B (zh) 2016-01-20
TW201111558A (en) 2011-04-01
US20120118750A1 (en) 2012-05-17
IL217234A (en) 2016-05-31
JP5775077B2 (ja) 2015-09-09
MY160150A (en) 2017-02-28
KR20120049237A (ko) 2012-05-16
WO2011012475A1 (en) 2011-02-03
US9617647B2 (en) 2017-04-11

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