CN102386147A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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CN102386147A
CN102386147A CN2011102547654A CN201110254765A CN102386147A CN 102386147 A CN102386147 A CN 102386147A CN 2011102547654 A CN2011102547654 A CN 2011102547654A CN 201110254765 A CN201110254765 A CN 201110254765A CN 102386147 A CN102386147 A CN 102386147A
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semiconductor device
wiring
peristome
described semiconductor
resilient coating
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CN102386147B (zh
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右田达夫
江泽弘和
山下创一
志摩真也
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Japanese Businessman Panjaya Co ltd
Kioxia Corp
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Toshiba Corp
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Abstract

公开一种半导体装置及半导体装置的制造方法。根据实施例，设置半导体基板、再布线和表面层。半导体基板上形成了布线及焊盘电极。再布线在所述半导体基板上形成。表面层比所述再布线更宽。

Description

半导体装置及半导体装置的制造方法
关联申请的参照
本申请享受2010年8月31日申请的日本专利申请编号2010-195026的优先权，该日本专利申请的全部内容在本申请中援用。
技术领域
一般地说，本实施例涉及半导体装置及半导体装置的制造方法。
背景技术
为了实现半导体装置的高集成化和高功能化，要求动作速度的提高和存储器的大容量化。相应地，在半导体基板上的再布线形成过程中，也要求10um间距以下的微细的再布线。
再布线的间距若微细化，则有在再布线间发生泄漏的危险。另外，在再布线上进一步形成布线和凸点等时的余量减少，光刻加工变得困难。
发明内容
根据实施例，设置半导体基板、再布线和表面层。半导体基板上形成了布线及焊盘电极。再布线在所述半导体基板上形成。表面层比所述再布线更宽。
附图说明
图1(a)～(e)是第1实施例的半导体装置的制造方法的截面图。
图2(a)～(d)是第1实施例的半导体装置的制造方法的截面图。
图3(a)～(c)是第1实施例的半导体装置的制造方法的截面图。
图4(a)～(b)是第1实施例的半导体装置的制造方法的截面图。
图5(a)～(b)是第1实施例的半导体装置的制造方法的截面图。
图6(a)～(b)是第1实施例的半导体装置的制造方法的截面图。
图7是第2实施例的半导体装置的概略构成的截面图。
具体实施方式
以下，参照附图说明实施例的半导体装置及半导体装置的制造方法。另外，这些实施例不限定本发明。
(第1实施例)
图1(a)～(e)、图2(a)～(d)、图3(a)～(c)、图4(a)～(b)、图5(a)～(b)及图6(a)～(b)是第1实施例的半导体装置的制造方法的截面图。
图1(a)中，在基体材料层1上形成焊盘电极2a及布线2b的同时，以覆盖焊盘电极2a及布线2b的方式形成保护膜3。另外，在保护膜3形成使焊盘电极2a露出的开口部3a及使布线2b的一部分露出的开口部3b。
另外，作为基体材料层1，例如，可以采用形成了逻辑电路或DRAM等的集成电路的半导体基板。另外，焊盘电极2a及布线2b的材料例如可以采用以Al或Al为主要成分的金属。另外，保护膜3的材料例如可以采用硅氧化膜或硅酸氮化膜或硅氮化膜等的无机绝缘体。
接着，如图1(b)所示，通过在保护膜3上涂覆感光性树脂等，在保护膜3上形成缓冲层4。另外，作为缓冲层4的材料，例如可以采用聚酰亚胺系树脂。为了减少晶片应力，也可以采用硬化温度比聚酰亚胺系树脂低的丙烯酸系树脂或苯酚系树脂。
接着，如图1(c)所示，采用光刻技术，在缓冲层4形成使焊盘电极2a及布线2b的一部分分别露出的开口部4a、4b。
接着，如图1(d)所示，通过采用溅射、电镀、CVD、ALD或蒸镀等的方法，在焊盘电极2a、布线2b、保护膜3及缓冲层4上形成基底阻挡金属膜5。另外，作为基底阻挡金属膜5，例如可以采用Ti和其上的Cu的层叠构造。另外，也可以取代Ti，采用TiN、TiW、W、Ta、Cr、Co等的材料。也可以取代Cu，采用Al、Pd、Au、Ag等的材料。
接着，如图1(e)所示，采用旋涂等的方法，在基底阻挡金属膜5上形成光刻胶膜6。
接着，如图2(a)所示，通过进行光刻胶膜6的曝光及显影，在光刻胶膜6形成开口部6a～6c。另外，开口部6a可在焊盘电极2a上配置，开口部6b可在缓冲层4上配置，开口部6c可在布线2b上配置。
接着，如图2(b)所示，通过电解电镀在开口部6a～6c埋入第1导体，隔着基底阻挡金属膜5在焊盘电极2a、缓冲层4及布线2b上分别形成再布线7a～7c。而且，通过电解电镀在开口部6a～6c埋入第2导体，在再布线7a～7c上分别形成表面层8a～8c。这里，再布线7a可以用于与焊盘电极2a的连接。再布线7c可以用于与布线2b的连接。再布线7b可以用于缓冲层4上的再布线7a、7c的回绕等。
另外，表面层8a～8c可以采用蚀刻耐性比再布线7a～7c高的材料，再布线7a～7c相对于表面层8a～8c的蚀刻选择比优选在1以上。例如，再布线7a～7c的材料可以选择以Cu或Cu为主要成分的金属，表面层8a～8c的材料可以从Ni、Mn、Ta、Zn、Cr、Co、Sn及Pb中选择至少一个。另外，再布线7a～7c的宽度优选在60am以下，优选在40am以下，而且最好在20μm以下。
接着，如图2(c)所示，通过灰化等的方法，除去基底阻挡金属膜5上的光刻胶膜6。
接着，如图2(d)所示，通过蚀刻再布线7a～7c的侧面，以使宽度比表面层8a～8c狭窄的方式使再布线7a～7c细线化。
这里，表面层8a～8c通过采用蚀刻耐性比再布线7a～7c高的材料，与表面层8a～8c比，可以促进再布线7a～7c的侧面的蚀刻。因而，可以以分别沿着再布线7a～7c从再布线7a～7c分别向宽度方向伸出的方式，在再布线7a～7c上形成表面层8a～8c。
此时，通过蚀刻再布线7a～7c的侧面的同时，蚀刻基底阻挡金属膜5，也可以除去再布线7a～7c的周围的基底阻挡金属膜5。从而，表面层8a～8c和基底阻挡金属膜5最好都存在蚀刻比。
接着，如图3(a)所示，通过在布线2b、缓冲层4及表面层8a～8c上涂覆感光性树脂等，在布线2b、缓冲层4及表面层8a～8c上形成缓冲层9。另外，作为缓冲层9的材料，例如可以采用聚酰亚胺系树脂。为了减少晶片应力，也可以采用硬化温度比聚酰亚胺系树脂低的丙烯酸系树脂或苯酚系树脂。
接着，如图3(b)所示，通过采用光刻技术，在缓冲层9形成使焊盘电极2a上的表面层8a及布线2b的一部分分别露出的开口部9a、9b。
接着，如图3(c)所示，通过采用溅射、电镀、CVD、ALD或蒸镀等的方法，在布线2b、保护膜3、缓冲层4、9及表面层8a上形成基底阻挡金属膜10。另外，作为基底阻挡金属膜10，例如，可以采用Ti和其上的Cu的层叠构造。
接着，如图4(a)所示，通过采用旋涂等的方法，在基底阻挡金属膜10上形成光刻胶膜11。
接着，如图4(b)所示，通过进行光刻胶膜11的曝光及显影，在光刻胶膜11形成使焊盘电极2a上的表面层8a露出的开口部11a。
接着，如图5(a)所示，通过电解电镀在开口部11a依次埋入阻挡层12及焊接层13、14，隔着基底阻挡金属膜10在表面层8a上形成突出电极。另外，例如，阻挡层12的材料可采用Ni，焊接层13的材料可采用Cu，焊接层14的材料可采用Sn。
接着，如图5(b)所示，通过灰化等的方法，除去基底阻挡金属膜10上的光刻胶膜11。
接着，如图6(a)所示，通过以阻挡层12及焊接层13、14组成的突出电极为掩模，蚀刻基底阻挡金属膜10，除去阻挡层12及焊接层13、14组成的突出电极的周围的基底阻挡金属膜10。
接着，如图6(b)所示，通过回流焊接层13、14，使焊接层13、14合金化，在阻挡层12上形成合金焊接层15组成的突出电极。
以上的工序可在基体材料层1为晶片的状态进行。在以上的工序后，通过使该晶片单片化，可切出半导体芯片。
这里，通过使再布线7a～7c细线化，可以抑制再布线7a～7c间的泄漏并使再布线7a～7c的间距微细化，同时，通过在再布线7a～7c上分别形成比再布线7a～7c更宽的表面层8a～8c，可以提高在再布线7a上形成开口部9a时的余量。
另外，通过在蚀刻除去再布线7a～7c的周围的基底阻挡金属膜5的同时进行再布线7a～7c的细线化，可抑制工序数的增大。
另外，所述实施例中，说明了突出电极采用焊球的方法，但是也可以采用镍凸点、金凸点或铜凸点等。另外，所述实施例中，作为基底阻挡金属膜5、10，说明了采用Ti和Cu的层叠构造的方法，但是也可以采用Ti或Cu的单体，也可以采用Cr、PT、W等的单体，也可以采用这些金属的层叠构造。
另外，作为突出电极的接合方法，可以采用焊接接合、合金接合等的金属接合，也可以采用ACF(Anisotropic conductive Film：异向导电膜)接合、NCF(Nonconductive Film：非导电膜)接合、ACP(AnisotropicConductive Paste：异向导电膏)接合、NCP(Nonconductive Paste：非导电膏)接合等。
(第2实施例)
图7是第2实施例的半导体装置的概略构成的截面图。
图7中，在缓冲层21上，隔着基底阻挡金属膜22形成再布线23，在再布线23上形成表面层24。
另外，作为缓冲层21的材料，例如，可以采用聚酰亚胺系树脂。为了减少晶片应力，也可以采用硬化温度比聚酰亚胺系树脂低的丙烯酸系树脂或苯酚系树脂。另外，作为基底阻挡金属膜22，例如，可以采用Ti和其上的Cu的层叠构造。另外，也可以取代Ti，采用TiN、TiW、W、Ta、Cr、Co等的材料。也可以取代Cu，采用Al、Pd、Au、Ag等的材料。
表面层24可以采用蚀刻耐性比再布线23高的材料。例如，再布线23的材料可以选择Cu，表面层24的材料可以从Mn、Ta、Ni、Zn、Cr、Co、Sn及Pb中选择至少一个。
另外，再布线23的截面形状可以采用顶宽度B比底宽度A狭窄的梯形。表面层24的截面形状可以采用顶宽度D比底宽度C狭窄的梯形。另外，为了使再布线23及表面层24的截面形状为梯形，可以将埋入再布线23及表面层24的光刻胶开口部的截面形状设为逆梯形。
这里，表面层24的宽度设定成比再布线23的底宽度A宽。另外，最好满足|A-B|＞|C-D|的关系。例如，再布线23的厚度可设定成5μm，底宽度A可设定成4μm，顶宽度B可设定成3μm。表面层24的厚度可设定成0.1μM，底宽度C可设定成5μM，顶宽度D可设定成4.98μM。此时，|A-B|为1μm，|C-D|为0.02μm。
这里，通过将再布线23的截面形状设为顶宽度B比底宽度A狭窄的梯形，可以增大再布线23和其基底的贴紧强度，抑制再布线23的剥离，并实现再布线23的微细化。
另外，通过将表面层24的宽度设定成比再布线23的底宽度A宽，从顶面观察时，可以因表面层24而使再布线23不可见。因而，即使在晶片面内和晶片间，再布线23的侧面的倾斜角发生偏差，也可以使从顶面照射光时的反射光的亮度均一化。因而，即使在采用这样的反射光进行外观检查和尺寸测长的场合，也可以减少误将良品判定为缺陷的误检测和布线端的误识别导致的误测长，可提高品质管理的精度。
虽然说明本发明的几个实施例，但是这些实施例只是作为例示，而不是限定发明的范围。这些新实施例可以各种各样的形态实施，在不脱离发明的要旨的范围，可进行各种省略、置换、变更。这些实施例及其变形也是发明的范围、要旨所包含的，同时也是权利要求的范围所述的发明及其均等的范围所包含的。

Claims (20)

1.一种半导体装置，其特征在于，具备：
形成了布线及焊盘电极的半导体基板；
在所述半导体基板上形成的再布线；
比所述再布线更宽的表面层。
2.权利要求1所述的半导体装置，其特征在于，
所述再布线相对于所述表面层的蚀刻选择比为1以上。
3.权利要求1所述的半导体装置，其特征在于，
所述再布线的材料为Cu，所述表面层的材料为从Mn、Ta、Ni、Zn、Cr、Co、Sn及Pb中选择的至少一个。
4.权利要求1所述的半导体装置，其特征在于，
所述再布线的顶宽度比底宽度狭窄。
5.权利要求4所述的半导体装置，其特征在于，
所述表面层的宽度比所述再布线的底宽度更宽。
6.权利要求1所述的半导体装置，其特征在于，
在所述半导体基板形成了集成电路。
7.权利要求1所述的半导体装置，其特征在于，具备：
以覆盖所述布线及焊盘电极的方式在所述半导体基板上形成的保护膜；
在所述保护膜形成的使所述焊盘电极露出的第1开口部；
在所述保护膜形成的使所述布线的一部分露出的第2开口部。
8.权利要求7所述的半导体装置，其特征在于，具备：
在所述保护膜上形成的第1缓冲层；
在所述第1缓冲层形成的、经由所述第1开口部使所述焊盘电极露出的第3开口部；
在所述第1缓冲层形成的、经由所述第2开口部使所述布线的一部分露出的第4开口部。
9.权利要求8所述的半导体装置，其特征在于，
所述保护膜是无机绝缘体，所述第1缓冲层是树脂。
10.权利要求9所述的半导体装置，其特征在于，
所述树脂从聚酰亚胺系树脂、丙烯酸系树脂及苯酚系树脂中选择。
11.权利要求9所述的半导体装置，其特征在于，还具备：
在所述第1缓冲层和所述再布线之间形成的第1基底阻挡金属膜。
12.权利要求11所述的半导体装置，其特征在于，
所述再布线具备：
经由所述第1开口部及所述第3开口部与所述焊盘电极连接的第1再布线；
经由所述第2开口部及所述第4开口部与所述焊盘电极连接的第2再布线；
在所述第1缓冲层上形成的第3再布线。
13.权利要求12所述的半导体装置，其特征在于，具备：
在所述第1再布线、所述第2再布线及所述第3再布线上形成的第2缓冲层；
在所述第2缓冲层形成的、使所述第1再布线露出的第5开口部。
14.权利要求13所述的半导体装置，其特征在于，还具备：
经由所述第5开口部与所述第1再布线的表面层连接的突出电极。
15.权利要求14所述的半导体装置，其特征在于，
所述突出电极是合金焊接层组成的。
16.权利要求14所述的半导体装置，其特征在于，
还具备在所述第2缓冲层和所述突出电极之间形成的第2基底阻挡金属膜。
17.权利要求16所述的半导体装置，其特征在于，
所述第2缓冲层是树脂。
18.权利要求17所述的半导体装置，其特征在于，
所述树脂从聚酰亚胺系树脂、丙烯酸系树脂及苯酚系树脂中选择。
19.一种半导体装置的制造方法，其特征在于，包括：
在半导体基板上形成基底阻挡金属膜的工序；
在所述基底阻挡金属膜上形成具有开口部的光刻胶图形的工序；
在所述基底阻挡金属膜上形成再布线的工序；
在所述再布线上形成表面层的工序；
通过蚀刻所述再布线的侧面使其宽度比所述表面层更狭窄的工序。
20.权利要求19所述的半导体装置的制造方法，其特征在于，
通过在蚀刻所述再布线的侧面的同时蚀刻所述基底阻挡金属膜，除去所述再布线的周围的所述基底阻挡金属膜。
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