CN102376764A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN102376764A
CN102376764A CN2011100519452A CN201110051945A CN102376764A CN 102376764 A CN102376764 A CN 102376764A CN 2011100519452 A CN2011100519452 A CN 2011100519452A CN 201110051945 A CN201110051945 A CN 201110051945A CN 102376764 A CN102376764 A CN 102376764A
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CN
China
Prior art keywords
semiconductor region
region
semiconductor device
semiconductor
length
Prior art date
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Pending
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CN2011100519452A
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English (en)
Chinese (zh)
Inventor
佐藤慎吾
篠原仁
河村圭子
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Toshiba Corp
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Toshiba Corp
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Publication of CN102376764A publication Critical patent/CN102376764A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0289—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/156—LDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/159—Shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2011100519452A 2010-08-18 2011-03-03 半导体装置及其制造方法 Pending CN102376764A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP183398/2010 2010-08-18
JP2010183398A JP2012043955A (ja) 2010-08-18 2010-08-18 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
CN102376764A true CN102376764A (zh) 2012-03-14

Family

ID=44262919

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100519452A Pending CN102376764A (zh) 2010-08-18 2011-03-03 半导体装置及其制造方法

Country Status (4)

Country Link
US (1) US20120043606A1 (enrdf_load_stackoverflow)
EP (1) EP2421047A1 (enrdf_load_stackoverflow)
JP (1) JP2012043955A (enrdf_load_stackoverflow)
CN (1) CN102376764A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112362A (zh) * 2015-01-19 2017-08-29 株式会社日立制作所 半导体装置及其制造方法、电力变换装置、三相电动机系统、汽车和铁路车辆

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6336055B2 (ja) * 2014-05-23 2018-06-06 株式会社日立製作所 半導体装置、半導体装置の製造方法、電力変換装置、３相モータシステム、自動車、および鉄道車両
JP2016096307A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置
WO2016129068A1 (ja) 2015-02-12 2016-08-18 株式会社日立製作所 半導体装置及びその製造方法、電力変換装置、３相モータシステム、自動車並びに鉄道車両
US10903163B2 (en) 2015-10-19 2021-01-26 Vishay-Siliconix, LLC Trench MOSFET with self-aligned body contact with spacer
JP7075876B2 (ja) 2018-12-25 2022-05-26 株式会社日立製作所 炭化ケイ素半導体装置、電力変換装置、３相モータシステム、自動車および鉄道車両
DE102021113470A1 (de) * 2020-05-26 2021-12-02 Hyundai Mobis Co., Ltd. Leistungshalbleitervorrichtung und verfahren zur herstellung davon

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040089896A1 (en) * 2001-04-18 2004-05-13 Jun Sakakibara Semiconductor device having high breakdown voltage without increased on resistance
US20040099922A1 (en) * 2000-03-16 2004-05-27 Hitoshi Yamaguchi Semiconductor device including power MOSFET and peripheral device
US20070194375A1 (en) * 2006-02-20 2007-08-23 Kabushiki Kaisha Toshiba Semiconductor device
US20100200915A1 (en) * 2009-02-06 2010-08-12 Texas Instruments Incorporated Lateral trench mosfet having a field plate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3356162B2 (ja) * 1999-10-19 2002-12-09 株式会社デンソー 半導体装置及びその製造方法
JP2002231945A (ja) * 2001-02-06 2002-08-16 Denso Corp 半導体装置の製造方法
US7161208B2 (en) * 2002-05-14 2007-01-09 International Rectifier Corporation Trench mosfet with field relief feature

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040099922A1 (en) * 2000-03-16 2004-05-27 Hitoshi Yamaguchi Semiconductor device including power MOSFET and peripheral device
US20040089896A1 (en) * 2001-04-18 2004-05-13 Jun Sakakibara Semiconductor device having high breakdown voltage without increased on resistance
US20070194375A1 (en) * 2006-02-20 2007-08-23 Kabushiki Kaisha Toshiba Semiconductor device
US20100200915A1 (en) * 2009-02-06 2010-08-12 Texas Instruments Incorporated Lateral trench mosfet having a field plate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112362A (zh) * 2015-01-19 2017-08-29 株式会社日立制作所 半导体装置及其制造方法、电力变换装置、三相电动机系统、汽车和铁路车辆
CN107112362B (zh) * 2015-01-19 2020-07-07 株式会社日立制作所 半导体装置及其制造方法、电力变换装置、三相电动机系统、汽车和铁路车辆

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Publication number Publication date
EP2421047A1 (en) 2012-02-22
JP2012043955A (ja) 2012-03-01
US20120043606A1 (en) 2012-02-23

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Application publication date: 20120314