CN102376576A - 栅极沟槽以及半导体器件的制造方法 - Google Patents
栅极沟槽以及半导体器件的制造方法 Download PDFInfo
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- CN102376576A CN102376576A CN2010102615464A CN201010261546A CN102376576A CN 102376576 A CN102376576 A CN 102376576A CN 2010102615464 A CN2010102615464 A CN 2010102615464A CN 201010261546 A CN201010261546 A CN 201010261546A CN 102376576 A CN102376576 A CN 102376576A
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- doped polysilicon
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CN2010102615464A CN102376576A (zh) | 2010-08-24 | 2010-08-24 | 栅极沟槽以及半导体器件的制造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113539968A (zh) * | 2020-04-16 | 2021-10-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1531038A (zh) * | 2003-03-12 | 2004-09-22 | 株式会社瑞萨科技 | 半导体装置的制造方法 |
US20050269644A1 (en) * | 2004-06-08 | 2005-12-08 | Brask Justin K | Forming integrated circuits with replacement metal gate electrodes |
CN101552229A (zh) * | 2008-03-31 | 2009-10-07 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN101677087A (zh) * | 2008-09-12 | 2010-03-24 | 台湾积体电路制造股份有限公司 | 半导体元件的制法 |
CN101770944A (zh) * | 2008-12-29 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件栅极的制作方法 |
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- 2010-08-24 CN CN2010102615464A patent/CN102376576A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1531038A (zh) * | 2003-03-12 | 2004-09-22 | 株式会社瑞萨科技 | 半导体装置的制造方法 |
US20050269644A1 (en) * | 2004-06-08 | 2005-12-08 | Brask Justin K | Forming integrated circuits with replacement metal gate electrodes |
CN101552229A (zh) * | 2008-03-31 | 2009-10-07 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN101677087A (zh) * | 2008-09-12 | 2010-03-24 | 台湾积体电路制造股份有限公司 | 半导体元件的制法 |
CN101770944A (zh) * | 2008-12-29 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件栅极的制作方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113539968A (zh) * | 2020-04-16 | 2021-10-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Effective date: 20130614 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130614 |
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Effective date of registration: 20130614 Address after: 100176 No. 18 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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