CN102362171A - 测量单晶的缺陷密度的方法 - Google Patents
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- 230000007547 defect Effects 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000013078 crystal Substances 0.000 title abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 80
- 230000002950 deficient Effects 0.000 claims description 27
- 230000005484 gravity Effects 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000005305 interferometry Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000000879 optical micrograph Methods 0.000 description 6
- 230000000007 visual effect Effects 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 102000029749 Microtubule Human genes 0.000 description 3
- 108091022875 Microtubule Proteins 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 210000004688 microtubule Anatomy 0.000 description 3
- 101001056108 Xenopus laevis Protein max Proteins 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000004350 Strabismus Diseases 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001218 confocal laser scanning microscopy Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 235000015220 hamburgers Nutrition 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000004867 photoacoustic spectroscopy Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
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- G02B21/0052—Optical details of the image generation
- G02B21/0056—Optical details of the image generation based on optical coherence, e.g. phase-contrast arrangements, interference arrangements
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- H—ELECTRICITY
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- G01N21/88—Investigating the presence of flaws or contamination
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- G01N2021/8854—Grading and classifying of flaws
- G01N2021/8861—Determining coordinates of flaws
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- G01—MEASURING; TESTING
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- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G01N2021/8854—Grading and classifying of flaws
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8896—Circuits specially adapted for system specific signal conditioning
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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Abstract
Description
缺陷数目 | 缺陷 | 最大深度[μm] | 平均深度[μm] | 深度曲率 |
1 | - | - | - | - |
2 | D | 10.5 | 3.253 | 6.371 |
3 | S | 10.5 | 0.851 | 2.859 |
4 | S | 10.5 | 0.866 | 2.547 |
5 | - | - | - | - |
6 | B | 10.5 | 0.757 | 1.057 |
7 | S | 10.5 | 0.887 | 2.355 |
8 | E | 0.937 | 0.46 | 0.771 |
9 | S | 10.5 | 0.844 | 1.399 |
10 | S | 10.5 | 0.92 | 1.393 |
11 | D | 10.5 | 2.296 | 4.154 |
12 | S | 10.5 | 0.839 | 1.387 |
13 | E | 0.988 | 0.452 | 0.731 |
14 | - | - | - | - |
15 | S | 10.5 | 0.964 | 0.986 |
16 | E | 0.852 | 0.387 | 0.875 |
17 | S | 10.5 | 0.657 | 1.721 |
18 | E | 0.916 | 0.739 | 3.315 |
19 | S | 10.5 | 0.751 | 3.889 |
缺陷编号 | 倾斜[度] | ΔX | ΔY | 最大深度[μm] | 平均深度[μm] | 深度曲率 | 分类 |
1 | 177.1 | - | - | 10.4 | 0.617 | 1.038 | A |
2 | 95.6 | - | - | 1.242 | 0.169 | 0.245 | B |
3 | 98.9 | - | - | 0.769 | 0.233 | 0.326 | B |
4 | 30.2 | - | + | 10.4 | 0.732 | 0.908 | A- |
5 | 5.7 | - | + | 10.4 | 0.753 | 0.832 | A- |
6 | 87.4 | + | - | 1.144 | 0.409 | 0.825 | C+ |
7 | 176.9 | + | + | 10.4 | 0.778 | 4.886 | A++ |
8 | 53.6 | - | + | 1.065 | 0.553 | 1.761 | C- |
9 | 143.6 | + | + | 1.304 | 0.225 | 0.386 | B++ |
10 | 125.2 | - | - | 10.4 | 0.618 | 1.862 | A |
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009072340A JP4758492B2 (ja) | 2009-03-24 | 2009-03-24 | 単結晶の欠陥密度測定方法 |
JP2009-072340 | 2009-03-24 | ||
PCT/IB2010/000498 WO2010109285A1 (en) | 2009-03-24 | 2010-03-10 | Method of measuring defect density of single crystal |
Publications (2)
Publication Number | Publication Date |
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CN102362171A true CN102362171A (zh) | 2012-02-22 |
CN102362171B CN102362171B (zh) | 2013-09-25 |
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Application Number | Title | Priority Date | Filing Date |
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CN201080012974.1A Expired - Fee Related CN102362171B (zh) | 2009-03-24 | 2010-03-10 | 测量单晶的缺陷密度的方法 |
Country Status (5)
Country | Link |
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US (1) | US8831910B2 (zh) |
EP (1) | EP2411789A1 (zh) |
JP (1) | JP4758492B2 (zh) |
CN (1) | CN102362171B (zh) |
WO (1) | WO2010109285A1 (zh) |
Cited By (4)
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CN108169228A (zh) * | 2017-11-28 | 2018-06-15 | 中国工程物理研究院电子工程研究所 | 一种准确辨别碳化硅单晶位错类型的方法 |
CN113109363A (zh) * | 2021-03-10 | 2021-07-13 | 中国科学院上海微系统与信息技术研究所 | 一种表征硅晶体中缺陷的方法 |
CN113777354A (zh) * | 2021-08-10 | 2021-12-10 | 山东大学 | 一种单晶金刚石衬底中的缺陷检测方法 |
CN114136994A (zh) * | 2021-11-30 | 2022-03-04 | 无锡学院 | 一种SiC雪崩光电二极管的无损缺陷检测方法及装置 |
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JP4716148B1 (ja) * | 2010-03-30 | 2011-07-06 | レーザーテック株式会社 | 検査装置並びに欠陥分類方法及び欠陥検出方法 |
US9500597B2 (en) * | 2011-06-29 | 2016-11-22 | Kla-Tencor Corporation | Determination of absolute dimensions of particles used as calibration standards for optical measurement system |
JP5615251B2 (ja) * | 2011-12-02 | 2014-10-29 | 三菱電機株式会社 | 結晶欠陥検出方法、炭化珪素半導体装置の製造方法 |
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- 2009-03-24 JP JP2009072340A patent/JP4758492B2/ja not_active Expired - Fee Related
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2010
- 2010-03-10 EP EP10713243A patent/EP2411789A1/en not_active Ceased
- 2010-03-10 US US13/258,806 patent/US8831910B2/en not_active Expired - Fee Related
- 2010-03-10 WO PCT/IB2010/000498 patent/WO2010109285A1/en active Application Filing
- 2010-03-10 CN CN201080012974.1A patent/CN102362171B/zh not_active Expired - Fee Related
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US20120016630A1 (en) | 2012-01-19 |
CN102362171B (zh) | 2013-09-25 |
WO2010109285A1 (en) | 2010-09-30 |
EP2411789A1 (en) | 2012-02-01 |
US8831910B2 (en) | 2014-09-09 |
JP2010223812A (ja) | 2010-10-07 |
JP4758492B2 (ja) | 2011-08-31 |
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