CN102315262B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN102315262B CN102315262B CN201010226347XA CN201010226347A CN102315262B CN 102315262 B CN102315262 B CN 102315262B CN 201010226347X A CN201010226347X A CN 201010226347XA CN 201010226347 A CN201010226347 A CN 201010226347A CN 102315262 B CN102315262 B CN 102315262B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 157
- 238000000034 method Methods 0.000 title claims abstract description 67
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- 238000007667 floating Methods 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
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- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000002955 isolation Methods 0.000 abstract description 6
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 229910002601 GaN Inorganic materials 0.000 description 26
- 230000005684 electric field Effects 0.000 description 22
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- 229910052594 sapphire Inorganic materials 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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CN201010226347XA CN102315262B (zh) | 2010-07-06 | 2010-07-06 | 半导体器件及其制造方法 |
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CN201010226347XA CN102315262B (zh) | 2010-07-06 | 2010-07-06 | 半导体器件及其制造方法 |
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CN102315262A CN102315262A (zh) | 2012-01-11 |
CN102315262B true CN102315262B (zh) | 2013-11-20 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103050411B (zh) * | 2012-12-25 | 2015-10-07 | 中国电子科技集团公司第五十五研究所 | 一种半导体晶体管的制作方法 |
JP6338832B2 (ja) * | 2013-07-31 | 2018-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10205024B2 (en) * | 2016-02-05 | 2019-02-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure having field plate and associated fabricating method |
CN107230713A (zh) * | 2016-03-25 | 2017-10-03 | 北京大学 | 半导体器件及制造方法 |
CN106098770A (zh) * | 2016-08-08 | 2016-11-09 | 苏州本然微电子有限公司 | 一种新型栅结构的GaN基HEMT器件 |
CN109103245A (zh) * | 2018-07-26 | 2018-12-28 | 厦门市三安集成电路有限公司 | 一种双t型栅及制作方法和应用 |
CN110299408A (zh) * | 2019-07-22 | 2019-10-01 | 东南大学 | 一种具有槽栅调制结构的半极性GaN基增强型高电子迁移率晶体管 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5358885A (en) * | 1992-08-19 | 1994-10-25 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a field effect transistor with a T-shaped gate electrode and reduced capacitance |
CN1748320A (zh) * | 2002-12-16 | 2006-03-15 | 日本电气株式会社 | 场效应晶体管 |
CN101308796A (zh) * | 2007-05-16 | 2008-11-19 | 冲电气工业株式会社 | 场效应晶体管及其制造方法 |
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WO2005081304A1 (ja) * | 2004-02-20 | 2005-09-01 | Nec Corporation | 電界効果トランジスタ |
KR100631051B1 (ko) * | 2005-09-12 | 2006-10-04 | 한국전자통신연구원 | 부정형 고 전자 이동도 트랜지스터의 제조 방법 |
CN201829506U (zh) * | 2010-07-06 | 2011-05-11 | 西安能讯微电子有限公司 | 半导体器件 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5358885A (en) * | 1992-08-19 | 1994-10-25 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a field effect transistor with a T-shaped gate electrode and reduced capacitance |
CN1748320A (zh) * | 2002-12-16 | 2006-03-15 | 日本电气株式会社 | 场效应晶体管 |
CN101308796A (zh) * | 2007-05-16 | 2008-11-19 | 冲电气工业株式会社 | 场效应晶体管及其制造方法 |
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Owner name: SUZHOU DYNAX SEMICONDUCTOR INC. Free format text: FORMER OWNER: XI'AN DYNAX SEMICONDUCTOR CO., LTD. Effective date: 20140304 |
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Effective date of registration: 20140304 Address after: 215300 No. 18 Feng Feng Road, Yushan Town, Jiangsu, Kunshan Patentee after: Suzhou Dynax High-Energy Semiconductor Co., Ltd. Address before: 710075 innovation building, No. 25, Gaoxin Road, Xi'an hi tech Zone, Shaanxi, N701 Patentee before: Xi'an Nengxun Micro-Electronics Co., Ltd. |
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Inventor after: Pei Die Inventor before: Fan Aimin |
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