CN106098770A - 一种新型栅结构的GaN基HEMT器件 - Google Patents
一种新型栅结构的GaN基HEMT器件 Download PDFInfo
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- CN106098770A CN106098770A CN201610638795.8A CN201610638795A CN106098770A CN 106098770 A CN106098770 A CN 106098770A CN 201610638795 A CN201610638795 A CN 201610638795A CN 106098770 A CN106098770 A CN 106098770A
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- 230000004888 barrier function Effects 0.000 claims abstract description 26
- 241000826860 Trapezium Species 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 9
- 230000000869 mutational effect Effects 0.000 abstract description 3
- 230000001629 suppression Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610638795.8A CN106098770A (zh) | 2016-08-08 | 2016-08-08 | 一种新型栅结构的GaN基HEMT器件 |
Applications Claiming Priority (1)
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CN201610638795.8A CN106098770A (zh) | 2016-08-08 | 2016-08-08 | 一种新型栅结构的GaN基HEMT器件 |
Publications (1)
Publication Number | Publication Date |
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CN106098770A true CN106098770A (zh) | 2016-11-09 |
Family
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Family Applications (1)
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CN201610638795.8A Pending CN106098770A (zh) | 2016-08-08 | 2016-08-08 | 一种新型栅结构的GaN基HEMT器件 |
Country Status (1)
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CN (1) | CN106098770A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108333209A (zh) * | 2018-02-28 | 2018-07-27 | 中国电子科技集团公司第十三研究所 | 一种GaN HEMT加速寿命试验方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130160A (zh) * | 2011-01-06 | 2011-07-20 | 西安电子科技大学 | 槽形沟道AlGaN/GaN增强型HEMT器件及制作方法 |
CN102315262A (zh) * | 2010-07-06 | 2012-01-11 | 西安能讯微电子有限公司 | 半导体器件及其制造方法 |
CN102856355A (zh) * | 2012-09-04 | 2013-01-02 | 程凯 | 增强型半导体器件 |
CN205920974U (zh) * | 2016-08-08 | 2017-02-01 | 苏州本然微电子有限公司 | 一种新型栅结构的GaN基HEMT器件 |
-
2016
- 2016-08-08 CN CN201610638795.8A patent/CN106098770A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102315262A (zh) * | 2010-07-06 | 2012-01-11 | 西安能讯微电子有限公司 | 半导体器件及其制造方法 |
CN102130160A (zh) * | 2011-01-06 | 2011-07-20 | 西安电子科技大学 | 槽形沟道AlGaN/GaN增强型HEMT器件及制作方法 |
CN102856355A (zh) * | 2012-09-04 | 2013-01-02 | 程凯 | 增强型半导体器件 |
CN205920974U (zh) * | 2016-08-08 | 2017-02-01 | 苏州本然微电子有限公司 | 一种新型栅结构的GaN基HEMT器件 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108333209A (zh) * | 2018-02-28 | 2018-07-27 | 中国电子科技集团公司第十三研究所 | 一种GaN HEMT加速寿命试验方法 |
CN108333209B (zh) * | 2018-02-28 | 2020-04-28 | 中国电子科技集团公司第十三研究所 | 一种GaN HEMT加速寿命试验方法 |
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Effective date of registration: 20230419 Address after: Room 803, Building 2, No. 111 Xiangke Road, China (Shanghai) Pilot Free Trade Zone, Pudong New Area, Shanghai, 200120 Applicant after: Shanghai Huashi Jiaku Semiconductor Co.,Ltd. Address before: Unit 4-B403, Creative Industry Park, No. 328 Xinghu Street, Industrial Park, Suzhou City, Jiangsu Province, 215123 Applicant before: SUZHOU BENRAN MICROELECTRONICS CO.,LTD. Applicant before: HEBEI FAREAST COMMUNICATION SYSTEM ENGINEERING Co.,Ltd. |
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Application publication date: 20161109 |
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