CN103730360B - 具有背面场板结构的增强型hemt器件及其制备方法 - Google Patents
具有背面场板结构的增强型hemt器件及其制备方法 Download PDFInfo
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- CN103730360B CN103730360B CN201410007469.8A CN201410007469A CN103730360B CN 103730360 B CN103730360 B CN 103730360B CN 201410007469 A CN201410007469 A CN 201410007469A CN 103730360 B CN103730360 B CN 103730360B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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CN201410007469.8A CN103730360B (zh) | 2014-01-09 | 2014-01-09 | 具有背面场板结构的增强型hemt器件及其制备方法 |
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CN201410007469.8A CN103730360B (zh) | 2014-01-09 | 2014-01-09 | 具有背面场板结构的增强型hemt器件及其制备方法 |
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CN103730360A CN103730360A (zh) | 2014-04-16 |
CN103730360B true CN103730360B (zh) | 2017-02-01 |
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Families Citing this family (3)
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US11508821B2 (en) | 2017-05-12 | 2022-11-22 | Analog Devices, Inc. | Gallium nitride device for high frequency and high power applications |
US11355598B2 (en) | 2018-07-06 | 2022-06-07 | Analog Devices, Inc. | Field managed group III-V field effect device with epitaxial back-side field plate |
CN110010682A (zh) * | 2019-03-22 | 2019-07-12 | 华南理工大学 | 具有三明治结构的GaN-HEMT器件及其制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63216380A (ja) * | 1987-03-05 | 1988-09-08 | Fujitsu Ltd | 半導体装置 |
JP5417693B2 (ja) * | 2007-08-22 | 2014-02-19 | 日本電気株式会社 | 半導体装置 |
US9112009B2 (en) * | 2008-09-16 | 2015-08-18 | International Rectifier Corporation | III-nitride device with back-gate and field plate for improving transconductance |
JP2010272689A (ja) * | 2009-05-21 | 2010-12-02 | Renesas Electronics Corp | 電界効果トランジスタ |
US8643062B2 (en) * | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US9214538B2 (en) * | 2011-05-16 | 2015-12-15 | Eta Semiconductor Inc. | High performance multigate transistor |
US9024356B2 (en) * | 2011-12-20 | 2015-05-05 | Infineon Technologies Austria Ag | Compound semiconductor device with buried field plate |
US8969924B2 (en) * | 2012-05-21 | 2015-03-03 | The Board Of Trustees Of The Leland Stanford Junior University | Transistor-based apparatuses, systems and methods |
CN102820325B (zh) * | 2012-09-05 | 2014-12-10 | 电子科技大学 | 一种具有背电极结构的氮化镓基异质结场效应晶体管 |
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