CN201820759U - 一种场效应晶体管 - Google Patents
一种场效应晶体管 Download PDFInfo
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- CN201820759U CN201820759U CN2010202647333U CN201020264733U CN201820759U CN 201820759 U CN201820759 U CN 201820759U CN 2010202647333 U CN2010202647333 U CN 2010202647333U CN 201020264733 U CN201020264733 U CN 201020264733U CN 201820759 U CN201820759 U CN 201820759U
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CN2010202647333U CN201820759U (zh) | 2010-07-20 | 2010-07-20 | 一种场效应晶体管 |
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CN2010202647333U CN201820759U (zh) | 2010-07-20 | 2010-07-20 | 一种场效应晶体管 |
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CN201820759U true CN201820759U (zh) | 2011-05-04 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102636261A (zh) * | 2012-04-27 | 2012-08-15 | 北京工业大学 | 基于微动元调制 GaN HEMT 沟道电流的红外探测器 |
CN102723358A (zh) * | 2012-05-30 | 2012-10-10 | 程凯 | 绝缘栅场效应晶体管及其制造方法 |
CN106571363A (zh) * | 2015-10-13 | 2017-04-19 | 英飞凌科技奥地利有限公司 | 半导体器件 |
CN107248528A (zh) * | 2017-06-09 | 2017-10-13 | 西安电子科技大学 | 低频率损耗GaN基微波功率器件及其制作方法 |
CN107423463A (zh) * | 2017-02-23 | 2017-12-01 | 湘潭大学 | 一种铁电场效应晶体管模型的建立方法和系统 |
-
2010
- 2010-07-20 CN CN2010202647333U patent/CN201820759U/zh not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102636261A (zh) * | 2012-04-27 | 2012-08-15 | 北京工业大学 | 基于微动元调制 GaN HEMT 沟道电流的红外探测器 |
CN102636261B (zh) * | 2012-04-27 | 2014-05-21 | 北京工业大学 | 基于微动元调制 GaN HEMT 沟道电流的红外探测器 |
CN102723358A (zh) * | 2012-05-30 | 2012-10-10 | 程凯 | 绝缘栅场效应晶体管及其制造方法 |
CN102723358B (zh) * | 2012-05-30 | 2015-01-07 | 苏州能讯高能半导体有限公司 | 绝缘栅场效应晶体管及其制造方法 |
US9722064B2 (en) | 2012-05-30 | 2017-08-01 | Dynax Semiconductor, Inc. | Isolated gate field effect transistor and manufacture method thereof |
CN106571363A (zh) * | 2015-10-13 | 2017-04-19 | 英飞凌科技奥地利有限公司 | 半导体器件 |
CN107423463A (zh) * | 2017-02-23 | 2017-12-01 | 湘潭大学 | 一种铁电场效应晶体管模型的建立方法和系统 |
CN107423463B (zh) * | 2017-02-23 | 2020-10-27 | 湘潭大学 | 一种铁电场效应晶体管模型的建立方法和系统 |
CN107248528A (zh) * | 2017-06-09 | 2017-10-13 | 西安电子科技大学 | 低频率损耗GaN基微波功率器件及其制作方法 |
CN107248528B (zh) * | 2017-06-09 | 2019-10-11 | 西安电子科技大学 | 低频率损耗GaN基微波功率器件及其制作方法 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SUZHOU DYNAX SEMICONDUCTOR INC. Free format text: FORMER OWNER: XI'AN DYNAX SEMICONDUCTOR CO., LTD. Effective date: 20130416 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 710075 XI'AN, SHAANXI PROVINCE TO: 215300 SUZHOU, JIANGSU PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20130416 Address after: 215300 No. 18 Feng Feng Road, hi tech Zone, Jiangsu, Kunshan Patentee after: Suzhou Dynax High-Energy Semiconductor Co., Ltd. Address before: 710075 innovation building, No. 25, Gaoxin Road, Xi'an hi tech Zone, Shaanxi, N701 Patentee before: Xi'an Nengxun Micro-Electronics Co., Ltd. |
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C53 | Correction of patent for invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Pei Die Inventor before: Fan Aimin |
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COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: FAN AIMIN TO: PEI YI |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20110504 |