CN201887035U - 一种半导体芯片封装结构 - Google Patents
一种半导体芯片封装结构 Download PDFInfo
- Publication number
- CN201887035U CN201887035U CN 201020268073 CN201020268073U CN201887035U CN 201887035 U CN201887035 U CN 201887035U CN 201020268073 CN201020268073 CN 201020268073 CN 201020268073 U CN201020268073 U CN 201020268073U CN 201887035 U CN201887035 U CN 201887035U
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- gallium nitride
- semiconductor chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201020268073 CN201887035U (zh) | 2010-07-22 | 2010-07-22 | 一种半导体芯片封装结构 |
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CN 201020268073 CN201887035U (zh) | 2010-07-22 | 2010-07-22 | 一种半导体芯片封装结构 |
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CN201887035U true CN201887035U (zh) | 2011-06-29 |
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CN 201020268073 Expired - Lifetime CN201887035U (zh) | 2010-07-22 | 2010-07-22 | 一种半导体芯片封装结构 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103996706A (zh) * | 2014-04-16 | 2014-08-20 | 中国科学院半导体研究所 | 氮化镓基晶体管及其制备方法 |
CN107546207A (zh) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | 一种GaN基电子器件及其制备方法 |
CN111788680A (zh) * | 2018-01-18 | 2020-10-16 | 维尔塞特公司 | 模块化功率放大器设备和架构 |
-
2010
- 2010-07-22 CN CN 201020268073 patent/CN201887035U/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103996706A (zh) * | 2014-04-16 | 2014-08-20 | 中国科学院半导体研究所 | 氮化镓基晶体管及其制备方法 |
CN107546207A (zh) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | 一种GaN基电子器件及其制备方法 |
CN111788680A (zh) * | 2018-01-18 | 2020-10-16 | 维尔塞特公司 | 模块化功率放大器设备和架构 |
US11967937B2 (en) | 2018-01-18 | 2024-04-23 | Viasat, Inc. | Modularized power amplifier devices and architectures |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SUZHOU DYNAX SEMICONDUCTOR INC. Free format text: FORMER OWNER: XI'AN DYNAX SEMICONDUCTOR CO., LTD. Effective date: 20130418 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 710075 XI'AN, SHAANXI PROVINCE TO: 215300 SUZHOU, JIANGSU PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20130418 Address after: 215300 No. 18 Feng Feng Road, hi tech Zone, Jiangsu, Kunshan Patentee after: Suzhou Dynax High-Energy Semiconductor Co., Ltd. Address before: 710075 innovation building, No. 25, Gaoxin Road, Xi'an hi tech Zone, Shaanxi, N701 Patentee before: Xi'an Nengxun Micro-Electronics Co., Ltd. |
|
C53 | Correction of patent for invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Pei Die Inventor before: Fan Aimin |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: FAN AIMIN TO: PEI YI |
|
CX01 | Expiry of patent term |
Granted publication date: 20110629 |
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CX01 | Expiry of patent term |