CN102315239B - 光电元件 - Google Patents

光电元件 Download PDF

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Publication number
CN102315239B
CN102315239B CN201010511821.3A CN201010511821A CN102315239B CN 102315239 B CN102315239 B CN 102315239B CN 201010511821 A CN201010511821 A CN 201010511821A CN 102315239 B CN102315239 B CN 102315239B
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CN
China
Prior art keywords
semiconductor
units
electrodes
unit
extension
Prior art date
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Active
Application number
CN201010511821.3A
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English (en)
Chinese (zh)
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CN102315239A (zh
Inventor
沈建赋
井长慧
谢明勋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/830,059 external-priority patent/US9324691B2/en
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to CN201610597613.7A priority Critical patent/CN105977272B/zh
Publication of CN102315239A publication Critical patent/CN102315239A/zh
Application granted granted Critical
Publication of CN102315239B publication Critical patent/CN102315239B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
CN201010511821.3A 2010-07-02 2010-10-14 光电元件 Active CN102315239B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610597613.7A CN105977272B (zh) 2010-07-02 2010-10-14 光电元件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/830,059 US9324691B2 (en) 2009-10-20 2010-07-02 Optoelectronic device
US12/830,059 2010-07-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610597613.7A Division CN105977272B (zh) 2010-07-02 2010-10-14 光电元件

Publications (2)

Publication Number Publication Date
CN102315239A CN102315239A (zh) 2012-01-11
CN102315239B true CN102315239B (zh) 2016-08-17

Family

ID=45349596

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201010511821.3A Active CN102315239B (zh) 2010-07-02 2010-10-14 光电元件
CN201610597613.7A Active CN105977272B (zh) 2010-07-02 2010-10-14 光电元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610597613.7A Active CN105977272B (zh) 2010-07-02 2010-10-14 光电元件

Country Status (5)

Country Link
JP (3) JP2012015480A (enrdf_load_stackoverflow)
KR (4) KR101616098B1 (enrdf_load_stackoverflow)
CN (2) CN102315239B (enrdf_load_stackoverflow)
DE (1) DE102010060269B4 (enrdf_load_stackoverflow)
TW (3) TWI466284B (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466284B (zh) * 2010-07-02 2014-12-21 Epistar Corp 光電元件
KR20140059985A (ko) * 2012-11-09 2014-05-19 엘지이노텍 주식회사 발광소자
CN108447855B (zh) * 2012-11-12 2020-11-24 晶元光电股份有限公司 半导体光电元件的制作方法
KR101992366B1 (ko) * 2012-12-27 2019-06-24 엘지이노텍 주식회사 발광 소자
TWI633683B (zh) * 2013-08-27 2018-08-21 晶元光電股份有限公司 具有複數個發光結構之發光元件
TWI597864B (zh) 2013-08-27 2017-09-01 晶元光電股份有限公司 具有複數個發光結構之發光元件
CN110047865B (zh) * 2013-09-03 2024-02-23 晶元光电股份有限公司 具有多个发光结构的发光元件
CN110176469B (zh) * 2013-11-29 2022-01-04 晶元光电股份有限公司 发光二极管元件
JP6351520B2 (ja) * 2014-08-07 2018-07-04 株式会社東芝 半導体発光素子
WO2016129873A2 (ko) * 2015-02-13 2016-08-18 서울바이오시스 주식회사 발광소자 및 발광 다이오드
KR102647673B1 (ko) * 2016-09-27 2024-03-14 서울바이오시스 주식회사 발광 다이오드
KR102480220B1 (ko) * 2016-04-08 2022-12-26 삼성전자주식회사 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널
KR101987196B1 (ko) * 2016-06-14 2019-06-11 삼성디스플레이 주식회사 픽셀 구조체, 픽셀 구조체를 포함하는 표시장치 및 그 제조 방법
KR102363036B1 (ko) * 2017-04-03 2022-02-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 포함하는 반도체 소자 패키지
CN107516701B (zh) * 2017-07-14 2019-06-11 华灿光电(苏州）有限公司 一种高压发光二极管芯片及其制作方法
TWI731163B (zh) * 2017-09-13 2021-06-21 晶元光電股份有限公司 半導體元件

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CN101764187A (zh) * 2008-12-24 2010-06-30 Lg伊诺特有限公司 半导体发光器件

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CN101093849A (zh) * 2002-08-29 2007-12-26 首尔半导体股份有限公司 具有多个发光元件的发光装置
CN101764187A (zh) * 2008-12-24 2010-06-30 Lg伊诺特有限公司 半导体发光器件

Also Published As

Publication number Publication date
JP7001728B2 (ja) 2022-01-20
KR101929867B1 (ko) 2019-03-14
CN105977272B (zh) 2021-01-01
CN105977272A (zh) 2016-09-28
DE102010060269B4 (de) 2020-10-01
TWI446527B (zh) 2014-07-21
KR101616098B1 (ko) 2016-04-27
JP2012015480A (ja) 2012-01-19
CN102315239A (zh) 2012-01-11
TWI533474B (zh) 2016-05-11
JP6255372B2 (ja) 2017-12-27
KR20180006625A (ko) 2018-01-18
DE102010060269A1 (de) 2012-01-05
TW201519473A (zh) 2015-05-16
KR20170035357A (ko) 2017-03-30
JP2016021595A (ja) 2016-02-04
JP2020145432A (ja) 2020-09-10
KR20160048745A (ko) 2016-05-04
TW201203533A (en) 2012-01-16
TWI466284B (zh) 2014-12-21
KR20120003352A (ko) 2012-01-10
TW201203534A (en) 2012-01-16

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