CN102308031B - 碳化硅单晶制造用坩埚、以及碳化硅单晶的制造装置和制造方法 - Google Patents
碳化硅单晶制造用坩埚、以及碳化硅单晶的制造装置和制造方法 Download PDFInfo
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- CN102308031B CN102308031B CN201080006915.3A CN201080006915A CN102308031B CN 102308031 B CN102308031 B CN 102308031B CN 201080006915 A CN201080006915 A CN 201080006915A CN 102308031 B CN102308031 B CN 102308031B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 143
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 78
- 239000013078 crystal Substances 0.000 claims abstract description 77
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 48
- 239000002994 raw material Substances 0.000 claims abstract description 39
- 238000004821 distillation Methods 0.000 claims description 110
- 230000012010 growth Effects 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 45
- 238000002425 crystallisation Methods 0.000 claims description 32
- 230000008025 crystallization Effects 0.000 claims description 32
- 238000009434 installation Methods 0.000 claims description 22
- 230000007246 mechanism Effects 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 5
- 230000018109 developmental process Effects 0.000 claims description 4
- 238000000859 sublimation Methods 0.000 abstract 2
- 230000008022 sublimation Effects 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 133
- 238000012360 testing method Methods 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 238000002474 experimental method Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 10
- 238000012797 qualification Methods 0.000 description 10
- 230000006872 improvement Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 7
- 208000035475 disorder Diseases 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 238000005755 formation reaction Methods 0.000 description 3
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 208000016253 exhaustion Diseases 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009429 distress Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009052893A JP4547031B2 (ja) | 2009-03-06 | 2009-03-06 | 炭化珪素単結晶製造用坩堝、並びに炭化珪素単結晶の製造装置及び製造方法 |
JP2009-052893 | 2009-03-06 | ||
PCT/JP2010/053483 WO2010101200A1 (ja) | 2009-03-06 | 2010-02-25 | 炭化珪素単結晶製造用坩堝、並びに炭化珪素単結晶の製造装置及び製造方法 |
Publications (2)
Publication Number | Publication Date |
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CN102308031A CN102308031A (zh) | 2012-01-04 |
CN102308031B true CN102308031B (zh) | 2014-05-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080006915.3A Active CN102308031B (zh) | 2009-03-06 | 2010-02-25 | 碳化硅单晶制造用坩埚、以及碳化硅单晶的制造装置和制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8936680B2 (zh) |
EP (1) | EP2405038B1 (zh) |
JP (1) | JP4547031B2 (zh) |
KR (1) | KR101243585B1 (zh) |
CN (1) | CN102308031B (zh) |
WO (1) | WO2010101200A1 (zh) |
Families Citing this family (28)
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JP5526866B2 (ja) * | 2010-03-02 | 2014-06-18 | 住友電気工業株式会社 | 炭化珪素結晶の製造方法および炭化珪素結晶の製造装置 |
JP5482643B2 (ja) * | 2010-12-24 | 2014-05-07 | 新日鐵住金株式会社 | 炭化珪素単結晶インゴットの製造装置 |
CN102888651B (zh) * | 2011-07-22 | 2015-09-23 | 浙江昱辉阳光能源有限公司 | 一种坩埚罩和坩埚系统 |
JP5853648B2 (ja) * | 2011-11-30 | 2016-02-09 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
JP2015013762A (ja) * | 2013-07-03 | 2015-01-22 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法および炭化珪素単結晶基板 |
JP6230106B2 (ja) * | 2013-07-31 | 2017-11-15 | 太平洋セメント株式会社 | 炭化珪素単結晶の製造方法 |
US9809900B2 (en) * | 2013-10-30 | 2017-11-07 | Siemens Medical Solutions Usa, Inc. | Crystal growth chamber with O-ring seal for Czochralski growth station |
CN103603036A (zh) * | 2013-11-20 | 2014-02-26 | 河北同光晶体有限公司 | 一种用于生长碳化硅晶体的坩埚 |
KR101538867B1 (ko) * | 2013-12-26 | 2015-07-23 | 주식회사 포스코 | 실리콘카바이드 단결정 성장 장치 및 이를 이용한 실리콘카바이드 단결정의 성장 방법 |
CN104882365B (zh) * | 2014-02-28 | 2017-11-14 | 中国科学院物理研究所 | 一种碳化硅表面处理方法 |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
CN105040103A (zh) * | 2015-06-25 | 2015-11-11 | 江苏艾科勒科技有限公司 | 一种优质碳化硅晶体生长装置 |
US10793972B1 (en) | 2017-07-11 | 2020-10-06 | Ii-Vi Delaware, Inc. | High quality silicon carbide crystals and method of making the same |
CN107326329A (zh) * | 2017-08-31 | 2017-11-07 | 京东方科技集团股份有限公司 | 蒸发源和蒸镀装置 |
CN108149315B (zh) * | 2018-01-24 | 2020-10-23 | 中国科学院上海硅酸盐研究所 | 晶体生长用坩埚以及释放碳化硅晶体热应力的方法 |
JP7094171B2 (ja) | 2018-07-18 | 2022-07-01 | 昭和電工株式会社 | SiC単結晶の製造方法 |
JP7242977B2 (ja) * | 2018-11-14 | 2023-03-22 | 株式会社レゾナック | SiC単結晶製造装置及びSiC単結晶の製造方法 |
KR102122668B1 (ko) | 2018-12-12 | 2020-06-12 | 에스케이씨 주식회사 | 잉곳의 제조장치 및 이를 이용한 탄화규소 잉곳의 제조방법 |
DE102020106291B4 (de) * | 2020-03-09 | 2024-02-08 | Ebner Industrieofenbau Gmbh | Heizvorrichtung und Verfahren zur Kristallzüchtung mit beweglicher Impfkristallhalterung |
US20220049373A1 (en) * | 2020-08-11 | 2022-02-17 | II-VI Delaware, Inc | Sic single crystal(s) doped from gas phase |
CN113774488B (zh) * | 2021-09-23 | 2022-08-30 | 安徽光智科技有限公司 | 碳化硅晶体的生长方法 |
CN116905088B (zh) * | 2023-09-12 | 2024-01-19 | 苏州优晶光电科技有限公司 | 电阻法生长碳化硅晶体质量的控制方法、装置及生长方法 |
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CN1384892A (zh) * | 1999-10-08 | 2002-12-11 | 克里公司 | 碳化硅晶体生长的方法和装置 |
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JP3216322B2 (ja) * | 1993-04-12 | 2001-10-09 | 住友金属鉱山株式会社 | 単結晶育成装置 |
US6048813A (en) * | 1998-10-09 | 2000-04-11 | Cree, Inc. | Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
JP4288792B2 (ja) * | 1999-10-15 | 2009-07-01 | 株式会社デンソー | 単結晶製造方法及び単結晶製造装置 |
US6451112B1 (en) | 1999-10-15 | 2002-09-17 | Denso Corporation | Method and apparatus for fabricating high quality single crystal |
JP4903946B2 (ja) * | 2000-12-28 | 2012-03-28 | 株式会社ブリヂストン | 炭化ケイ素単結晶の製造方法及び製造装置 |
JP2005336010A (ja) * | 2004-05-27 | 2005-12-08 | Fujikura Ltd | 単結晶の製造方法及び製造装置 |
JP2007230846A (ja) | 2006-03-03 | 2007-09-13 | Matsushita Electric Ind Co Ltd | 単結晶製造装置用坩堝 |
US8568531B2 (en) | 2006-07-28 | 2013-10-29 | Pronomic Industry Ab | Seed holder for crystal growth reactors |
JP4926655B2 (ja) * | 2006-11-02 | 2012-05-09 | 新日本製鐵株式会社 | 炭化珪素単結晶成長用黒鉛坩堝及び炭化珪素単結晶製造装置 |
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2009
- 2009-03-06 JP JP2009052893A patent/JP4547031B2/ja active Active
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2010
- 2010-02-25 US US13/138,526 patent/US8936680B2/en active Active
- 2010-02-25 WO PCT/JP2010/053483 patent/WO2010101200A1/ja active Application Filing
- 2010-02-25 CN CN201080006915.3A patent/CN102308031B/zh active Active
- 2010-02-25 EP EP10748793.6A patent/EP2405038B1/en active Active
- 2010-02-25 KR KR1020117018299A patent/KR101243585B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1384892A (zh) * | 1999-10-08 | 2002-12-11 | 克里公司 | 碳化硅晶体生长的方法和装置 |
Non-Patent Citations (5)
Title |
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JP特开2001-114599A 2001.04.24 |
JP特开2002-255693A 2002.09.11 |
JP特开2005-336010A 2005.12.08 |
JP特开2008-115033A 2008.05.22 |
JP特表2002-527343A 2002.08.27 |
Also Published As
Publication number | Publication date |
---|---|
US20110308449A1 (en) | 2011-12-22 |
KR101243585B1 (ko) | 2013-03-20 |
JP4547031B2 (ja) | 2010-09-22 |
EP2405038A1 (en) | 2012-01-11 |
EP2405038B1 (en) | 2014-09-03 |
WO2010101200A1 (ja) | 2010-09-10 |
KR20110112410A (ko) | 2011-10-12 |
EP2405038A4 (en) | 2013-08-28 |
US8936680B2 (en) | 2015-01-20 |
CN102308031A (zh) | 2012-01-04 |
JP2010202485A (ja) | 2010-09-16 |
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