CN102280338B - 等离子体处理装置及其电介质窗结构 - Google Patents

等离子体处理装置及其电介质窗结构 Download PDF

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Publication number
CN102280338B
CN102280338B CN201110154174.XA CN201110154174A CN102280338B CN 102280338 B CN102280338 B CN 102280338B CN 201110154174 A CN201110154174 A CN 201110154174A CN 102280338 B CN102280338 B CN 102280338B
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CN
China
Prior art keywords
dielectric
window
protective cover
plasma
processing apparatus
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Expired - Fee Related
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CN201110154174.XA
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English (en)
Chinese (zh)
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CN102280338A (zh
Inventor
佐佐木和男
南雅人
齐藤均
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN201110154174.XA 2010-06-07 2011-06-02 等离子体处理装置及其电介质窗结构 Expired - Fee Related CN102280338B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010129653A JP2011258622A (ja) 2010-06-07 2010-06-07 プラズマ処理装置及びその誘電体窓構造
JP2010-129653 2010-06-07

Publications (2)

Publication Number Publication Date
CN102280338A CN102280338A (zh) 2011-12-14
CN102280338B true CN102280338B (zh) 2014-03-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110154174.XA Expired - Fee Related CN102280338B (zh) 2010-06-07 2011-06-02 等离子体处理装置及其电介质窗结构

Country Status (4)

Country Link
JP (1) JP2011258622A (ja)
KR (1) KR101263109B1 (ja)
CN (1) CN102280338B (ja)
TW (1) TW201220962A (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6190571B2 (ja) * 2012-01-17 2017-08-30 東京エレクトロン株式会社 プラズマ処理装置
JP6228400B2 (ja) * 2013-07-16 2017-11-08 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US10553398B2 (en) * 2013-09-06 2020-02-04 Applied Materials, Inc. Power deposition control in inductively coupled plasma (ICP) reactors
JP6435090B2 (ja) * 2013-10-03 2018-12-05 東京エレクトロン株式会社 プラズマ処理装置
JP6600990B2 (ja) * 2015-01-27 2019-11-06 東京エレクトロン株式会社 プラズマ処理装置
US10370763B2 (en) 2016-04-18 2019-08-06 Tokyo Electron Limited Plasma processing apparatus
JP2016167461A (ja) * 2016-05-02 2016-09-15 東京エレクトロン株式会社 プラズマ処理装置
JP6906377B2 (ja) * 2017-06-23 2021-07-21 東京エレクトロン株式会社 排気プレート及びプラズマ処理装置
KR102256691B1 (ko) * 2017-10-24 2021-05-26 세메스 주식회사 기판 처리 장치 및 방법
KR102046034B1 (ko) * 2017-12-22 2019-11-18 인베니아 주식회사 유도결합 플라즈마 처리장치
KR102071517B1 (ko) * 2018-05-30 2020-01-30 인베니아 주식회사 유도결합 플라즈마 처리장치
JP7303980B2 (ja) * 2019-07-09 2023-07-06 日新電機株式会社 プラズマ処理装置
KR102180641B1 (ko) * 2019-07-08 2020-11-19 인베니아 주식회사 유도 결합 플라즈마 처리장치
KR102180640B1 (ko) * 2019-07-08 2020-11-19 인베니아 주식회사 유도 결합 플라즈마 처리장치
CN115513025A (zh) * 2021-06-23 2022-12-23 北京鲁汶半导体科技有限公司 一种等离子刻蚀机的激励射频系统
JP2024084563A (ja) * 2022-12-13 2024-06-25 日新電機株式会社 プラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795429A (en) * 1993-01-12 1998-08-18 Tokyo Electron Limited Plasma processing apparatus
CN101076220A (zh) * 2006-05-18 2007-11-21 东京毅力科创株式会社 电感耦合等离子体处理装置和等离子体处理方法
CN101583234A (zh) * 2008-05-14 2009-11-18 东京毅力科创株式会社 感应耦合等离子体处理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331754B1 (en) 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP4028534B2 (ja) * 1999-05-13 2007-12-26 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP4672113B2 (ja) * 2000-07-07 2011-04-20 東京エレクトロン株式会社 誘導結合プラズマ処理装置
TWI290810B (en) * 2001-09-27 2007-12-01 Tokyo Electron Ltd Plasma treatment device
JP2008276984A (ja) * 2007-04-25 2008-11-13 Canon Inc プラズマ処理装置及び誘電体窓
KR20090073565A (ko) * 2007-12-31 2009-07-03 주식회사 에이디피엔지니어링 국소영역의 플라즈마 차폐장치 및 그 차폐방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795429A (en) * 1993-01-12 1998-08-18 Tokyo Electron Limited Plasma processing apparatus
CN101076220A (zh) * 2006-05-18 2007-11-21 东京毅力科创株式会社 电感耦合等离子体处理装置和等离子体处理方法
CN101583234A (zh) * 2008-05-14 2009-11-18 东京毅力科创株式会社 感应耦合等离子体处理装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2003-209098A 2003.07.25

Also Published As

Publication number Publication date
JP2011258622A (ja) 2011-12-22
CN102280338A (zh) 2011-12-14
KR101263109B1 (ko) 2013-05-09
KR20110134284A (ko) 2011-12-14
TW201220962A (en) 2012-05-16

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