CN102280338B - 等离子体处理装置及其电介质窗结构 - Google Patents
等离子体处理装置及其电介质窗结构 Download PDFInfo
- Publication number
- CN102280338B CN102280338B CN201110154174.XA CN201110154174A CN102280338B CN 102280338 B CN102280338 B CN 102280338B CN 201110154174 A CN201110154174 A CN 201110154174A CN 102280338 B CN102280338 B CN 102280338B
- Authority
- CN
- China
- Prior art keywords
- dielectric
- window
- protective cover
- plasma
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010129653A JP2011258622A (ja) | 2010-06-07 | 2010-06-07 | プラズマ処理装置及びその誘電体窓構造 |
JP2010-129653 | 2010-06-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102280338A CN102280338A (zh) | 2011-12-14 |
CN102280338B true CN102280338B (zh) | 2014-03-19 |
Family
ID=45105715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110154174.XA Expired - Fee Related CN102280338B (zh) | 2010-06-07 | 2011-06-02 | 等离子体处理装置及其电介质窗结构 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2011258622A (ja) |
KR (1) | KR101263109B1 (ja) |
CN (1) | CN102280338B (ja) |
TW (1) | TW201220962A (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6190571B2 (ja) * | 2012-01-17 | 2017-08-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6228400B2 (ja) * | 2013-07-16 | 2017-11-08 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
US10553398B2 (en) * | 2013-09-06 | 2020-02-04 | Applied Materials, Inc. | Power deposition control in inductively coupled plasma (ICP) reactors |
JP6435090B2 (ja) * | 2013-10-03 | 2018-12-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6600990B2 (ja) * | 2015-01-27 | 2019-11-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US10370763B2 (en) | 2016-04-18 | 2019-08-06 | Tokyo Electron Limited | Plasma processing apparatus |
JP2016167461A (ja) * | 2016-05-02 | 2016-09-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6906377B2 (ja) * | 2017-06-23 | 2021-07-21 | 東京エレクトロン株式会社 | 排気プレート及びプラズマ処理装置 |
KR102256691B1 (ko) * | 2017-10-24 | 2021-05-26 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR102046034B1 (ko) * | 2017-12-22 | 2019-11-18 | 인베니아 주식회사 | 유도결합 플라즈마 처리장치 |
KR102071517B1 (ko) * | 2018-05-30 | 2020-01-30 | 인베니아 주식회사 | 유도결합 플라즈마 처리장치 |
JP7303980B2 (ja) * | 2019-07-09 | 2023-07-06 | 日新電機株式会社 | プラズマ処理装置 |
KR102180641B1 (ko) * | 2019-07-08 | 2020-11-19 | 인베니아 주식회사 | 유도 결합 플라즈마 처리장치 |
KR102180640B1 (ko) * | 2019-07-08 | 2020-11-19 | 인베니아 주식회사 | 유도 결합 플라즈마 처리장치 |
CN115513025A (zh) * | 2021-06-23 | 2022-12-23 | 北京鲁汶半导体科技有限公司 | 一种等离子刻蚀机的激励射频系统 |
JP2024084563A (ja) * | 2022-12-13 | 2024-06-25 | 日新電機株式会社 | プラズマ処理装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5795429A (en) * | 1993-01-12 | 1998-08-18 | Tokyo Electron Limited | Plasma processing apparatus |
CN101076220A (zh) * | 2006-05-18 | 2007-11-21 | 东京毅力科创株式会社 | 电感耦合等离子体处理装置和等离子体处理方法 |
CN101583234A (zh) * | 2008-05-14 | 2009-11-18 | 东京毅力科创株式会社 | 感应耦合等离子体处理装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6331754B1 (en) | 1999-05-13 | 2001-12-18 | Tokyo Electron Limited | Inductively-coupled-plasma-processing apparatus |
JP4028534B2 (ja) * | 1999-05-13 | 2007-12-26 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
JP4672113B2 (ja) * | 2000-07-07 | 2011-04-20 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
TWI290810B (en) * | 2001-09-27 | 2007-12-01 | Tokyo Electron Ltd | Plasma treatment device |
JP2008276984A (ja) * | 2007-04-25 | 2008-11-13 | Canon Inc | プラズマ処理装置及び誘電体窓 |
KR20090073565A (ko) * | 2007-12-31 | 2009-07-03 | 주식회사 에이디피엔지니어링 | 국소영역의 플라즈마 차폐장치 및 그 차폐방법 |
-
2010
- 2010-06-07 JP JP2010129653A patent/JP2011258622A/ja active Pending
-
2011
- 2011-06-02 CN CN201110154174.XA patent/CN102280338B/zh not_active Expired - Fee Related
- 2011-06-02 KR KR1020110053344A patent/KR101263109B1/ko not_active IP Right Cessation
- 2011-06-03 TW TW100119605A patent/TW201220962A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5795429A (en) * | 1993-01-12 | 1998-08-18 | Tokyo Electron Limited | Plasma processing apparatus |
CN101076220A (zh) * | 2006-05-18 | 2007-11-21 | 东京毅力科创株式会社 | 电感耦合等离子体处理装置和等离子体处理方法 |
CN101583234A (zh) * | 2008-05-14 | 2009-11-18 | 东京毅力科创株式会社 | 感应耦合等离子体处理装置 |
Non-Patent Citations (1)
Title |
---|
JP特开2003-209098A 2003.07.25 |
Also Published As
Publication number | Publication date |
---|---|
JP2011258622A (ja) | 2011-12-22 |
CN102280338A (zh) | 2011-12-14 |
KR101263109B1 (ko) | 2013-05-09 |
KR20110134284A (ko) | 2011-12-14 |
TW201220962A (en) | 2012-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102280338B (zh) | 等离子体处理装置及其电介质窗结构 | |
KR100556983B1 (ko) | 유도 결합 플라즈마 처리 장치 | |
CN104299879A (zh) | 感应耦合等离子体处理装置 | |
TWI284367B (en) | Inductor-coupled plasma processing device | |
KR20110126556A (ko) | 플라즈마 처리 장치 | |
US8181597B2 (en) | Plasma generating apparatus having antenna with impedance controller | |
TWI489578B (zh) | 製程處理部件、包括該部件的基板處理設備,以及使用該設備的基板處理方法 | |
TW201719715A (zh) | 感應耦合型等離子體處理裝置 | |
TW201633363A (zh) | 電漿處理裝置 | |
WO2008088110A1 (en) | Plasma generating apparatus | |
KR100907438B1 (ko) | 플라즈마 발생장치 | |
KR100873923B1 (ko) | 플라즈마 발생장치 | |
TWI466597B (zh) | 電漿製程設備(二) | |
JP2004356651A (ja) | 誘導結合プラズマ処理装置 | |
CN104517797B (zh) | 等离子体处理装置 | |
KR100627785B1 (ko) | 유도 결합 플라즈마 처리 장치 | |
KR101184859B1 (ko) | 하이브리드 플라즈마 소스 및 이를 채용한 플라즈마 발생 장치 | |
CN101440524A (zh) | 一种等离子化学反应器 | |
US11817291B2 (en) | Faraday shield and apparatus for treating substrate | |
KR20140141268A (ko) | 유도 결합 플라즈마 처리 장치 | |
KR101949850B1 (ko) | 유도결합 플라즈마 처리장치 | |
TWI809543B (zh) | 電漿蝕刻設備 | |
JP2003100723A (ja) | 誘導結合プラズマ処理装置 | |
CN109801824B (zh) | 介质窗组件及反应腔室 | |
KR20040025094A (ko) | 유도결합형 플라즈마 처리장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140319 Termination date: 20170602 |