1290810 A7 B7 五、發明説明（1 ) 【發明領域】 本發明是關於防止對配設於連接有高頻電源的高頻天 線與電漿生成部之間的電介質的異物附著的電漿處理裝置 經濟部智慧財產局員工消費合作社印製 【發明背景】 【習知技藝之說明】 感應親合電漿（Inductively Coupled Plasma)處理裝置（ 以下稱爲ICP裝置）是經由處理容器的一部分的石英等的 電介質（Dielectric)，對配置於處理容器外部的螺旋狀線圈 或螺旋狀的高頻天線供給高頻功率，藉由該高頻天線由形 成於處理容器內的感應電場，生成處理氣體的電漿的電漿 處理裝置。此ICP裝置主要是因藉由感應電場生成電漿， 故可獲得高密度電漿的點優良，在半導體裝置以及液晶顯 示裝置用基板（以下稱爲LCD基板）等的製造中的蝕刻以及 成膜製程使用。 但是，ICP裝置在配設於高頻天線與電漿生成部之間 的電介質的電漿生成部側的面異物會附著，有處理條件的 變動或引起微粒（Particle)的產生。 再者，在使用具有水平成分的高頻天線之ICP裝置， 依照電介質的面內位置異物的附著量不同。此點可考慮爲 在高頻天線的各位置的電位不同成爲高頻天線與電漿之間 的電容耦合強度的不同，相對於在電容耦合強的部分電介 質的濺鍍（Sputter)比對電介質的異物的附著還優勢，在電 (請先閱讀背面之注意事項再填寫本頁) -秦· ί 、v" Γ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -4- 1290810 經濟部智慧財產局員工消費合作社印製 A7 _______B7 _五、發明説明（2 ) 容耦合弱的部分對電介質的異物的附著比電介質的濺鍍還 優勢。因電介質的面內位置所造成的異物的附著量的不同 除了上述問題點外，在被處理基板面內的電漿處理的不均 勻的問題也發生。此問題在裝置越大越顯著地顯現。 爲了解決此問題，也有加熱電介質以防止異物的附著 的方法，惟伴隨著近年的裝置的大型化，加熱手段自身也 變成大規模，造成與裝置的成本上升有關。而且，因處理 中必須冷卻控制被處理基板，故無法使電介質太高溫。 【發明槪要】 本發明的目的是提供防止對配設於高頻天線與電漿生 成部之間的電介質的異物的附著的電漿處理裝置。 第一發明是一種電漿處理裝置，包含： 高頻天線； 連接於該高頻天線的高頻電源； 設置被處理體的晶座； 配設於該高頻天線與該晶座之間的電介質； 配設於該高頻天線與該電介質之間的導電體； 連接於該導電體的接地電路；以及 配設於該接地電路中的感應器（Inductor)。 第二發明是一種電漿處理裝置，包含： 具有水平成分的高頻天線； 連接於該高頻天線的高頻電源； 設置被處理體的晶座； 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 線 1290810 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（3 ) 配設於該高頻天線與該晶座之間的電介質； 配設於該高頻天線與該電介質之間的導電體； 連接於該導電體的接地電路；以及 配設於該接地電路中的阻抗元件。 第三發明是一種電漿處理裝置，包含： 設置被處理體的晶座； 使至少一部分在處理時的被處理體的正上方而配設的 高頻天線； 連接於該高頻天線的高頻電源； 配設於該高頻天線與該晶座之間的電介質； 配設於該高頻天線與該電介質之間的導電體； 連接於該導電體的接地電路；以及 配設於該接地電路中的阻抗元件。 如果依照第一發明，可防止對配設於高頻天線與電漿 生成部之間的電介質的異物的附著，可製造高品質的製品 。此外，對於取代感應器使用電阻的情形，當使前述導電 體電氣地浮起時對電介質的異物的附著最小，惟此點也還 無法對應於像附著量還很多的裝置。相對於此若使用感應 器的話，藉由電感的設定値可使電介質的濺鍍量增加，可 防止在各種裝置對電介質的異物的附著。 而且，感應器的電感爲可變較佳。再者，在接地電路 中具有電容器或電路的開閉手段也可以。前述電容器的電 容爲可變較佳。如果依照這些構成，對應於高頻天線的電 位、配設於高頻天線與電漿生成部之間的電介質的材質或 本紙張尺度適用中國國家標準（CNS ) M規格（21〇X 297公釐） _ 6 _ (請先閲讀背面之注意事項再填寫本頁) •裝_1290810 A7 B7 V. EMBODIMENT OF THE INVENTION (1) Field of the Invention The present invention relates to an economical treatment apparatus for preventing adhesion of foreign matter disposed on a dielectric disposed between a high-frequency antenna to which a high-frequency power source is connected and a plasma generating portion. INTELLIGENT INTELLECTUAL PROPERTY SECTOR WORKING COOPERATION CO., LTD. [Invention Background] [Inductively Coupled Plasma Processing Device (hereinafter referred to as ICP device) is a dielectric such as quartz that passes through a part of a processing container. (Dielectric), supplying a high-frequency power to a spiral coil or a spiral high-frequency antenna disposed outside the processing container, and generating a plasma of the processing gas by the induced electric field formed in the processing container by the high-frequency antenna Slurry treatment unit. In the ICP apparatus, since the plasma is generated by the induced electric field, the point of obtaining a high-density plasma is excellent, and etching and film formation in the manufacture of a semiconductor device and a substrate for a liquid crystal display device (hereinafter referred to as an LCD substrate) are employed. Process use. However, in the ICP apparatus, foreign matter on the surface of the plasma generating portion disposed on the dielectric between the high-frequency antenna and the plasma generating portion adheres, and there is a variation in processing conditions or generation of particles. Further, in an ICP apparatus using a high-frequency antenna having a horizontal component, the amount of adhesion of foreign matter in the in-plane position of the dielectric is different. This point can be considered as the difference in the capacitive coupling strength between the high-frequency antenna and the plasma at different potentials of the high-frequency antenna, and the sputtering of the partial dielectric with a strong capacitive coupling (Sputter) versus the dielectric The attachment of foreign objects is also advantageous. In the electricity (please read the notes on the back and fill out this page) - Qin· ί, v" Γ This paper scale applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -4- 1290810 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 _______B7 _ V. Invention description (2) The weak coupling of the capacitive coupling to the foreign matter of the dielectric is also superior to the sputtering of the dielectric. The difference in the amount of adhesion of foreign matter due to the in-plane position of the dielectric In addition to the above problems, the problem of unevenness in plasma treatment in the surface of the substrate to be processed also occurs. This problem appears more prominently on the larger the device. In order to solve this problem, there is a method of heating the dielectric to prevent foreign matter from adhering. However, with the increase in the size of the device in recent years, the heating means itself has become large-scale, which is associated with an increase in the cost of the device. Further, since the substrate to be processed must be cooled and controlled during the process, the dielectric cannot be made too high. SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma processing apparatus which prevents adhesion of foreign matter disposed in a dielectric disposed between a high frequency antenna and a plasma generating portion. The first invention is a plasma processing apparatus comprising: a high frequency antenna; a high frequency power source connected to the high frequency antenna; a crystal holder for providing a processed object; and a dielectric disposed between the high frequency antenna and the crystal seat An electric conductor disposed between the high frequency antenna and the dielectric; a ground circuit connected to the electric conductor; and an inductor disposed in the ground circuit. A second invention is a plasma processing apparatus comprising: a high frequency antenna having a horizontal component; a high frequency power source connected to the high frequency antenna; and a crystal holder of the object to be processed; the paper scale is applicable to the Chinese National Standard (CNS) A4 Specifications (210X297 mm) (Please read the note on the back and fill out this page) Loading and setting up 1290810 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Print A7 B7 V. Invention Description (3) Equipped with the high frequency antenna a dielectric between the crystal holder; a conductor disposed between the high frequency antenna and the dielectric; a ground circuit connected to the conductor; and an impedance element disposed in the ground circuit. A third invention is a plasma processing apparatus comprising: a crystal holder on which a body to be processed is disposed; a high frequency antenna disposed at least a portion directly above the object to be processed during processing; and a high frequency connected to the high frequency antenna a power source disposed between the high frequency antenna and the crystal seat; a conductor disposed between the high frequency antenna and the dielectric; a ground circuit connected to the conductor; and a ground circuit disposed Impedance element in . According to the first aspect of the invention, it is possible to prevent adhesion of foreign matter to the dielectric disposed between the high-frequency antenna and the plasma generating portion, and it is possible to manufacture a high-quality product. Further, in the case where a resistor is used instead of the inductor, the adhesion of the foreign matter to the dielectric is minimized when the conductor is electrically floated, but this point does not correspond to a device having a much larger amount of adhesion. In contrast, if an inductor is used, the amount of sputtering of the dielectric can be increased by the setting of the inductance, and the adhesion of the foreign matter to the dielectric in various devices can be prevented. Moreover, the inductance of the inductor is preferably variable. Further, the grounding circuit may have a means for opening and closing a capacitor or a circuit. The capacitance of the aforementioned capacitor is preferably variable. According to these configurations, the material corresponding to the potential of the high-frequency antenna, the dielectric disposed between the high-frequency antenna and the plasma generating unit, or the paper size is applicable to the Chinese National Standard (CNS) M specification (21〇X 297 mm). ) _ 6 _ (Please read the notes on the back and fill out this page) • Install _
、1T 線- 1290810 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（4 ) 厚度、高頻天線與被處理體的距離的變化，使用以防止對 電介質的異物的附著的微調整爲可能。 再者，此裝置更藉由具備：測定導電體的電位的測定 手段；以及根據藉由該測定手段測定的該導電體的電位， 變更感應器的電感與電容器的電容的任一個以上的控制手 段的構成，根據處理條件的變化，容易使感應器的電感與 電容器的電容變化，故可正確地提供電漿處理爲可能的電 漿處理裝置。 如果依照第二發明，可緩和因電介質的面內位置所造 成的異物的附著量的不同，可提高被處理體的面內處理均 勻性（Uniformity)。特別是在高頻天線如圖5使對高頻天 線的被處理體的被處理面的正投影的至少一部分與被處理 面重疊而配設的裝置，也加入高頻天線的影響，雖然因電 介質的面內位置所造成的異物的附著量的不同大，但是如 果依照本發明可解除此不同，使被處理體的面內均勻處理 爲可能。本發明的[具有水平成分的高頻天線]是指如圖 2(a)〜（c)由上看的話被捲繞複數捲的形狀的高頻天線，不 包含如圖3由上看的話僅被捲繞一次的形狀的高頻天線形 狀。但是，例如對如圖4鉛直地豎立被處理基板而處理的 裝置的情形，不是具有按照字面的水平方向成分的高頻天 線，而是具有鉛直方向成分的高頻天線。 如果依照第三發明，在使高頻天線的至少一部分在處 理時的被處理體的正上方的裝置中，也加入此高頻天線的 影響，雖然因電介質的面內位置所造成的異物的附著量的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) _ 7 _ (請先閲讀背面之注意事項再填寫本頁), 1T line - 1290810 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 V. Invention description (4) Thickness, variation of the distance between the high-frequency antenna and the object to be processed, and fine adjustment to prevent adhesion to foreign matter of the dielectric As possible. Further, the apparatus further includes: a measuring means for measuring the potential of the conductor; and a control means for changing the inductance of the inductor and the capacitance of the capacitor based on the potential of the conductor measured by the measuring means According to the change of the processing conditions, the inductance of the inductor and the capacitance of the capacitor are easily changed, so that it is possible to accurately provide a plasma processing apparatus in which plasma processing is possible. According to the second aspect of the invention, the difference in the amount of adhesion of the foreign matter due to the in-plane position of the dielectric can be alleviated, and the in-plane processing uniformity (Uniformity) of the object to be processed can be improved. In particular, in the case where the high-frequency antenna is disposed such that at least a part of the orthogonal projection of the processed surface of the object to be processed of the radio-frequency antenna overlaps the surface to be processed, the influence of the high-frequency antenna is also added, although the dielectric is The difference in the amount of adhesion of the foreign matter caused by the in-plane position is large, but if the difference can be relieved according to the present invention, it is possible to uniformly process the in-plane of the object to be processed. The "high-frequency antenna having a horizontal component" of the present invention refers to a high-frequency antenna having a shape in which a plurality of windings are wound as seen from above in Figs. 2(a) to (c), and does not include only the top view as shown in Fig. 3. The shape of the high frequency antenna that is wound once. However, for example, in the case of a device which is processed by vertically erecting the substrate to be processed as shown in Fig. 4, it is not a high-frequency antenna having a horizontal component in a literal direction, but a high-frequency antenna having a vertical component. According to the third aspect of the invention, in the apparatus in which at least a part of the radio-frequency antenna is directly above the object to be processed at the time of processing, the influence of the high-frequency antenna is also added, although the adhesion of foreign matter due to the in-plane position of the dielectric is adhered. The amount of this paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 7 _ (Please read the back note and fill out this page)
1290810 A7 B7 五、發明説明（5 ) 不同大，但是如果依照此構成可解除此不同，使被處理體 的面內均勻處理爲可能。 在第二、第三發明中阻抗元件爲感應器較佳。可廣泛 地適用於高頻天線的電位、設置於高頻天線與電漿之間的 電介質的材質或厚度、高頻天線與被處理體的距離不同的 裝置。此外，感應器的電感爲可變較佳。再者，在接地電 路中具有電容器或電路的開閉手段也可以。對於此情形， 電容器的電容爲可變較佳。 【圖式之簡單說明】 圖1是顯示與本發明的實施形態有關的電漿蝕刻裝置 100的槪略剖面圖。 圖2(a)、（b)、（c)是說明具有水平成分的天線.的形狀 圖。 圖3是說明不相當於具有水平成分的天線的形狀圖。 圖4是鉛直地豎立被處理基板而處理的裝置的槪略圖 〇 圖5是對高頻天線的被處理體的被處理面的正投影的 至少一部分與被處理面重疊而配設的裝置的槪略圖。 【符號說明】 100:電漿蝕刻裝置 102:處理容器 103:處理部 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） —-I- mmmi§ mMmmMMt tmmMmtm —Βιϋ mmmmmmtt mi tmaMmMmw 1>11 I (請先閱讀背面之注意事項再填寫本頁) 、11 線 經濟部智慧財產局員工消費合作社印製 1290810 A7 __ B7 _ 五、發明説明（6 ) 10 6:晶座 106a:電極部 106b:電極保護部 107:絕緣構件 110:天線室 111、162:匹配電路 112:高頻天線 11 3、1 6 0:高頻電源 120:電介質 130:處理氣體源 150:閘 152:排氣管 154:閘閥 170:導電體 174:電介質蓋 180:接地電路 302:感應器 304:電容器 【較佳實施例之詳細說明】 本發明所適用的電漿處理裝置的一例舉電漿蝕刻裝置 來說明。圖1是顯示與本發明的實施形態有關的電漿蝕刻 裝置100的槪略剖面圖。 如圖1所示電漿鈾刻裝置100具有例如由鋁等的導電 (請先閲讀背面之注意事項再填寫本頁) 裝· -線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 9 - 1290810 A7 B7 五、發明説明（7 ) 性材料構成的角筒形狀的處理容器102。處理容器102接 地，鈾刻處理是在此處理容器102內進行。 在處理容器1 0 2的底部經由絕緣構件1 〇 7配設有略矩 形狀的晶座（Suscept〇r)106。在晶座106載置有被處理體 例如LCD基板L。晶座106由電極部106a與電極保護部 106b構成。 電極部106a例如由表面被實施陽極氧化處理的鋁或 不銹鋼等的導電性材料構成。電極保護部106b覆蓋電極 部106a的載置面以外的部分，由陶瓷等的絕緣性材料構 成。 在晶座106的電極部106a經由匹配電路（Matching circuit)lll，電氣地連接有高頻電源113。藉由在電漿處 理時，由高頻電源113施加預定的高頻例如6MHz的高頻 功率使偏壓電位產生，可有效地將在處理部1〇3內被激發 的電漿引入LCD基板的處理面。此處，晶座106的電極 部106a爲僅接地的構成也可以。 在晶座106的上方配設有天線室110。在天線室110 的內部具備高頻天線11 2。高頻天線11 2例如形成銅、鋁 、不銹鋼等的導體爲螺旋狀、線圈狀或環（Loop)狀，在處 理容器102上部具備。在高頻天線112的兩端子間經由匹 配電路162連接有電漿生成用的高頻電源160。此外，天 線阻抗高時使高頻天線多重化也可以。 而且，在電介質1 20的下部配設有本發明的特徵的導 電體170，連接有具有電感爲可變的感應器302以及電容 (請先閱讀背面之注意事項再填寫本頁) •裝· 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -10- 1290810 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（8) 爲可變的電容器304的接地電路180。接地電路180具有 電路開閉手段（未圖示）也可以。再者，在面對導電體170 下部的LCD基板L的部分具備電介質蓋174。電介質蓋 174比電介質120薄，例如由石英或陶瓷等的電介質構成 ，在伴隨著異物附著的交換時僅藉由交換此電介質蓋174 ，可抑制成本。 在電介質蓋174具備噴淋頭（Shower head)(未圖示）， 由處理氣體源130經由流量控制裝置（MFC)132將預定的 處理氣體例如氟化碳（Fluorocarbon)氣體或Ar氣體等導入 處理部103。 而且，在處理容器102的底部連接有排氣管152，使 此處理容器102內的氣體可藉由未圖示的排氣手段例如真 空泵排出而構成，可使處理部103的環境爲任意的減壓度 〇 此外，在處理容器102的側部配設有閘閥（Gate valve) 1 54，可由接鄰設置的真空隔絕室（Load-lock chamber)藉由傳送手臂（Arm)等的傳送機構，將未處理的 LCD基板L傳入到處理部1〇3內。 說明如以上構成的電漿蝕刻裝置100的動作。首先， 打開閘閥154藉由未圖示的傳送手臂經由閘150將LCD 基板L傳送到處理部1〇3。然後未圖示的提升銷（Lifter pin)由晶座106上升。LCD基板L被置於此提升銷上，若 提升銷下降的話，LCD基板L被載置於晶座106上。 將預定的處理氣體導入處理部103，藉由連接於排氣 ^----7--·--€—^1-I (請先閲讀背面之注意事項再填寫本頁)1290810 A7 B7 V. The invention description (5) is different, but if this difference is made in accordance with this configuration, it is possible to uniformly process the in-plane of the object to be processed. In the second and third inventions, the impedance element is preferably an inductor. It can be widely applied to the potential of a high-frequency antenna, the material or thickness of a dielectric provided between a high-frequency antenna and a plasma, and a device in which the distance between the high-frequency antenna and the object to be processed is different. In addition, the inductance of the inductor is preferably variable. Further, the grounding circuit may have a means for opening and closing a capacitor or a circuit. For this case, the capacitance of the capacitor is preferably variable. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a plasma etching apparatus 100 according to an embodiment of the present invention. 2(a), (b) and (c) are diagrams showing the shape of an antenna having a horizontal component. Fig. 3 is a view showing the shape of an antenna which does not correspond to a horizontal component. 4 is a schematic view of a device that is processed by vertically erecting a substrate to be processed. FIG. 5 is a view of a device in which at least a part of an orthographic projection of a processed surface of a target object of a high-frequency antenna overlaps with a surface to be processed. Sketch map. [Description of Symbols] 100: Plasma etching apparatus 102: Processing container 103: Processing section The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) - I-mmmi§ mMmmMMt tmmMmtm - Βιϋ mmmmmmtt mi tmaMmMmw 1> 11 I (Please read the note on the back and fill out this page), 11th Line Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1290810 A7 __ B7 _ V. Invention Description (6) 10 6: Crystal Holder 106a: Electrode Port 106b : Electrode protection portion 107: Insulating member 110: Antenna chambers 111, 162: Matching circuit 112: High-frequency antenna 11 3, 1 6 0: High-frequency power source 120: Dielectric 130: Process gas source 150: Gate 152: Exhaust pipe 154 : Gate valve 170: Conductor 174: Dielectric cover 180: Ground circuit 302: Inductor 304: Capacitor [Detailed Description of Preferred Embodiment] An example of a plasma processing apparatus to which the present invention is applied will be described with respect to a plasma etching apparatus. Fig. 1 is a schematic cross-sectional view showing a plasma etching apparatus 100 according to an embodiment of the present invention. The plasma uranium engraving apparatus 100 shown in FIG. 1 has electrical conductivity, for example, made of aluminum (please read the back of the back sheet and fill out this page). - The Ministry of Economy, Intellectual Property Office, and the Consumer Cooperatives Printed in this paper scale applies to China. National Standard (CNS) A4 Specification (210X 297 mm) 9 - 1290810 A7 B7 V. INSTRUCTION DESCRIPTION (7) A processing container 102 of a rectangular tube shape composed of a material. The processing vessel 102 is grounded and the uranium engraving process is carried out in the processing vessel 102. A crystal seat of a slightly rectangular shape is disposed via the insulating member 1 〇 7 at the bottom of the processing container 102. A substrate to be processed such as an LCD substrate L is placed on the wafer holder 106. The crystal holder 106 is composed of an electrode portion 106a and an electrode protection portion 106b. The electrode portion 106a is made of, for example, a conductive material such as aluminum or stainless steel whose surface is anodized. The electrode protection portion 106b covers a portion other than the mounting surface of the electrode portion 106a, and is made of an insulating material such as ceramic. The high frequency power source 113 is electrically connected to the electrode portion 106a of the crystal holder 106 via a matching circuit 111. By applying a predetermined high frequency, for example, a high frequency power of 6 MHz, by the high frequency power source 113 to generate a bias potential at the time of plasma processing, the plasma excited in the processing portion 1A can be efficiently introduced into the LCD substrate. Processing surface. Here, the electrode portion 106a of the crystal holder 106 may be configured to be grounded only. An antenna chamber 110 is disposed above the crystal base 106. A high frequency antenna 11 2 is provided inside the antenna room 110. The high-frequency antenna 11 2 is formed of, for example, a conductor such as copper, aluminum or stainless steel in a spiral shape, a coil shape or a loop shape, and is provided in the upper portion of the processing container 102. A high frequency power supply 160 for plasma generation is connected between the two terminals of the high frequency antenna 112 via a matching circuit 162. In addition, it is also possible to multiplex the HF antenna when the antenna impedance is high. Further, a conductor 170 of the present invention is disposed at a lower portion of the dielectric member 120, and a sensor 302 having a variable inductance and a capacitor are connected (please read the back sheet before reading the page). Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumer Cooperatives, Printed Paper Scale Applicable to China National Standard (CNS) A4 Specification (210X297 mm) -10- 1290810 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed V. Invention Description (8) The ground circuit 180 is a variable capacitor 304. The ground circuit 180 may have a circuit opening and closing means (not shown). Further, a dielectric cover 174 is provided in a portion facing the LCD substrate L at the lower portion of the conductor 170. The dielectric cover 174 is thinner than the dielectric 120, and is made of, for example, a dielectric such as quartz or ceramic. By exchanging the dielectric cover 174 with the exchange of foreign matter, the cost can be suppressed. The dielectric cover 174 includes a shower head (not shown), and the processing gas source 130 introduces a predetermined processing gas such as fluorinated carbon (Fluorocarbon) gas or Ar gas into the processing via a flow rate control device (MFC) 132. Part 103. Further, an exhaust pipe 152 is connected to the bottom of the processing container 102, and the gas in the processing container 102 can be discharged by an exhaust means such as a vacuum pump (not shown), and the environment of the processing unit 103 can be arbitrarily reduced. Pressure 〇 In addition, a gate valve 1 54 is disposed on the side of the processing container 102. The load-lock chamber that is disposed adjacent to each other can be transported by a transfer mechanism such as an arm (Arm). The unprocessed LCD substrate L is introduced into the processing unit 1〇3. The operation of the plasma etching apparatus 100 configured as above will be described. First, the gate valve 154 is opened, and the LCD substrate L is transferred to the processing unit 1〇3 via the gate 150 via a transfer arm (not shown). Then, a lifter pin (not shown) is raised by the crystal holder 106. The LCD substrate L is placed on the lift pin, and if the lift pin is lowered, the LCD substrate L is placed on the crystal holder 106. The predetermined process gas is introduced into the processing unit 103, and is connected to the exhaust gas ^----7-----€-^1-I (please read the back of the back sheet and fill in this page)
、1T 線 本紙張尺度適用中國國家標準（CNS ) M規格（210X297公釐） -11 - 經濟部智慧財產局員工消費合作社印製 1290810 A7 _ B7 _ 五、發明説明（9 ) 管1 52的未圖示的真空泵抽真空到預定的真空度，例如調 節到30mTorr的真空度。 接著由高頻電源160經由匹配電路162將例如 13.56MHz的高頻功率供給到天線室110內的高頻天線112 。此時，藉由高頻天線112的感應作用在處理部103生成 電漿。 如此生成的處理部1 03的電漿藉由施加於晶座1 06的 偏壓電位移動到晶座106上的LCD基板L的方向，可在 被處理面進行所希望的蝕刻處理。在蝕刻處理終了後，處 理完的LCD基板L經由閘150傳出到真空隔絕室。 其次，說明如上述使用電漿鈾刻裝置1〇〇進行蝕刻處 理的情形的因導電體170所造成的對電介質蓋174的處理 部103側的異物的附著防止作用 當無本實施形態的導電體170時，因電介質蓋174的 中央部在電力供給點附近，電位非常高，高頻天線丨12與 電漿電容耦合，電介質蓋Π4被濺鍍，故異物不易..:附著。 另一方面因高頻天線11 2的端部或在遠離高頻天線丨i 2的 饋電部的位置對電介質蓋1 74的垂直電場小濺鍍速度小， 故異物附著很多。 因此，如本實施形態設置導電體17〇於電介質12〇與 電介質盍174之間，經由感應器302以及電容器304接地 的話，會形成有由感應器302、電容器304導電體170、 電介質蓋174以及電漿所構成的閉迴路，使導電體ι7〇與 電漿電容耦合。據此，電介質蓋1 7 4的外緣部也被濺鍍， 本紙張尺度適用中國國家標準（CNS ) A4規格（210x297公釐） -- (請先閲讀背面之注意事項再填寫本頁), 1T line paper size applies to China National Standard (CNS) M specification (210X297 mm) -11 - Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1290810 A7 _ B7 _ V. Invention description (9) Tube 1 52 The illustrated vacuum pump draws a vacuum to a predetermined degree of vacuum, for example, to a vacuum of 30 mTorr. High frequency power of, for example, 13.56 MHz is supplied from the high frequency power source 160 to the high frequency antenna 112 in the antenna room 110 via the matching circuit 162. At this time, the plasma is generated in the processing unit 103 by the induction of the high-frequency antenna 112. The plasma of the processing portion 103 thus generated is moved to the direction of the LCD substrate L on the wafer holder 106 by the bias potential applied to the wafer holder 106, and the desired etching treatment can be performed on the surface to be processed. After the etching process is finished, the processed LCD substrate L is transferred to the vacuum isolation chamber via the gate 150. Next, the adhesion preventing action of the foreign material on the processing portion 103 side of the dielectric cover 174 by the conductor 170 in the case where the etching process is performed using the plasma uranium etching apparatus 1 described above will be described. At 170 o'clock, since the central portion of the dielectric cover 174 is near the power supply point, the potential is very high, the high frequency antenna 丨12 is coupled to the plasma capacitor, and the dielectric cover 4 is sputtered, so that foreign matter is not easily attached. On the other hand, since the end portion of the high-frequency antenna 11 2 or the position away from the feeding portion of the high-frequency antenna 丨i 2 has a small vertical electric field sputtering speed of the dielectric cover 1 74, foreign matter adheres a lot. Therefore, if the conductive body 17 is disposed between the dielectric member 12A and the dielectric device 174, and is grounded via the inductor 302 and the capacitor 304, the inductor 302, the capacitor 304 conductor 170, the dielectric cover 174, and the like are formed. The closed loop formed by the plasma causes the conductor ι7 耦合 to be capacitively coupled to the plasma. Accordingly, the outer edge of the dielectric cover 174 is also sputtered, and the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210x297 mm) -- (please read the notes on the back and fill out this page)
1290810 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（10) 可減輕異物的附著。但是，若被濺鍍的速度比異物的附著 速度快的話，因會擔心電介質蓋174被削去，雜質混入被 處理體，故需調整感應器302的電感或電容器304的電容 ’使異物的附著速度與濺鍍速度大致同等。 對於無導電體170的裝置以及有導電體170的裝置使 電容器304的電容變化，在電介質蓋174的中心部、中間 部、外緣部配置玻璃小片，對被處理體進行鈾刻處理，針 對其表面的變化進行測定。正値表示異物的附著量；負値 表示玻璃小片的削去量。但是此時被處理體的蝕刻率 (Etching rate)以及分布並無顯著差異。 其結果在無導電體170的裝置，中心部爲-0.7// m ; 中間部爲+0.2// m ;外緣部爲+0.9// m。在有導電體170的 裝置中，電容器304的電容爲l〇〇〇pF時，中心部爲+0.5 //m;中間部爲+〇.5//m;外緣部爲+0.4//m，電容爲 1 500pF時，中心部爲-0.3// m ;中間部爲-0.8// m ;外緣部 爲-0.3// m。得知在有此評價所使用的導電體170的裝置 ，電容器304的電容在1000pF與1500pF之間有異物的附 著速度與濺鍍速度大致同等的最佳値。而且得知對電介質 蓋174的異物附著的面內不均勻可大幅地被緩和。 相對於此，在有導電體170的裝置使用於接地電路 180不配設感應器，僅配設電容器304的等價電路，雖然 在0〜4000pF的範圍使電容器304的電容變化17點，惟並 無異物的附著速度與濺鍍速度大致同等。 再者，使用在此等價電路配設感應器.，大幅地增加導 (請先閲讀背面之注意事項再填寫本頁) 裝.1290810 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (10) can reduce the attachment of foreign bodies. However, if the speed of sputtering is faster than the adhesion speed of foreign matter, the dielectric cover 174 may be scraped off and impurities may be mixed into the object to be processed. Therefore, it is necessary to adjust the inductance of the inductor 302 or the capacitance of the capacitor 304 to cause adhesion of foreign matter. The speed is roughly the same as the sputtering speed. The device having no conductor 170 and the device having the conductor 170 change the capacitance of the capacitor 304, and a small piece of glass is placed on the central portion, the intermediate portion, and the outer edge portion of the dielectric cover 174, and the object to be processed is subjected to uranium etching treatment. The change in surface was measured. Positive 値 indicates the amount of foreign matter attached; negative 値 indicates the amount of cut of the glass piece. However, there is no significant difference in the etching rate and distribution of the object to be processed at this time. As a result, in the device without the conductor 170, the center portion was -0.7 / / m; the middle portion was +0.2 / / m; the outer edge portion was +0.9 / / m. In the device having the conductor 170, when the capacitance of the capacitor 304 is l〇〇〇pF, the center portion is +0.5 //m; the middle portion is +〇.5//m; the outer edge portion is +0.4//m. When the capacitance is 1500pF, the center portion is -0.3//m; the middle portion is -0.8//m; and the outer edge portion is -0.3//m. It is known that in the device having the electric conductor 170 used for the evaluation, the capacitance of the capacitor 304 has an optimum speed at which the attachment speed of the foreign matter is approximately equal to the sputtering speed between 1000 pF and 1500 pF. Further, it is known that the in-plane unevenness of the foreign matter adhering to the dielectric cover 174 can be largely alleviated. On the other hand, in the device having the conductor 170, the ground circuit 180 is not provided with an inductor, and only the equivalent circuit of the capacitor 304 is disposed. Although the capacitance of the capacitor 304 is changed by 17 points in the range of 0 to 4000 pF, The adhesion speed of the foreign matter is approximately the same as the sputtering speed. In addition, use the sensor in this equivalent circuit to greatly increase the guide (please read the note on the back and then fill out this page).
、1T 線 本紙張尺度適用中國國家標準（CNS ) Α4規格〈210 Χ297公釐） -13- 1290810 A7 B7 五、發明説明（11) 電體與電漿間的電阻而評價後，藉由調整感應器的電感’ 有異物的附著速度與濺鍍速度大致同等的位置。因此，本 發明可以說可適用於高頻天線的電位、設置於高頻天線與 電漿之間的電介質的材質或厚度、高頻天線與被處理體的 距離不同的各種裝置。 1------，I —镛— 裝-- (請先閲讀背面之注意事項再填寫本頁), 1T line paper size applies to China National Standard (CNS) Α 4 specifications <210 Χ 297 mm) -13- 1290810 A7 B7 V. Invention description (11) After the resistance between the electric body and the plasma is evaluated, by adjusting the induction The inductance of the device 'has a position where the adhesion speed of the foreign matter is approximately equal to the sputtering speed. Therefore, the present invention can be applied to various devices in which the potential of the high-frequency antenna, the material or thickness of the dielectric provided between the high-frequency antenna and the plasma, and the distance between the high-frequency antenna and the object to be processed are different. 1------, I —镛 — Loading -- (Please read the notes on the back and fill out this page)
、1T 經濟部智慧財產局員工消費合作社印製 -14- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）, 1T Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing -14- This paper scale applies to China National Standard (CNS) Α4 specification (210Χ297 mm)