TW200540987A - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method Download PDF

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Publication number
TW200540987A
TW200540987A TW094105665A TW94105665A TW200540987A TW 200540987 A TW200540987 A TW 200540987A TW 094105665 A TW094105665 A TW 094105665A TW 94105665 A TW94105665 A TW 94105665A TW 200540987 A TW200540987 A TW 200540987A
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Taiwan
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impedance
plasma
frequency power
processing container
lower electrode
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TW094105665A
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Chinese (zh)
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TWI267138B (en
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Tsutomu Satoyoshi
Ryo Sato
Kazuo Sasaki
Hitoshi Saito
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B37/00—Cases
    • G04B37/12—Cases for special purposes, e.g. watch combined with ring, watch combined with button
    • G04B37/122—Cases for special purposes, e.g. watch combined with ring, watch combined with button used as a mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B37/00—Cases
    • G04B37/0008—Cases for pocket watches and wrist watches
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B45/00—Time pieces of which the indicating means or cases provoke special effects, e.g. aesthetic effects
    • G04B45/0069—Cases and fixed parts with a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A plane parallel plasma processing apparatus includes an impedance adjustment unit having a capacitive component, which is disposed between a lower electrode and a processing chamber. The impedance adjustment unit adjusts the value of the impedance over the path extending from an upper electrode to a grounded casing of a matching circuit via plasma, the lower electrode and the wall of the processing chamber to a level lower than the value of the impedance over the path extending from the upper electrode to the grounded casing of the matching circuit via the plasma and the wall of the processing chamber, and thus, highly uniform plasma can be generated by minimizing the generation of plasma in the space between the cathode electrode and the processing chamber wall.

Description

I 200540987 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於利用高頻電力實施處理氣體之電漿化並 利用該電漿對基板實施蝕刻等處理之電漿處理裝置及電漿 處理方法。 【先前技術】 II 半導體元件及液晶顯示裝置等扁平板之製造步驟中， 爲了對半導體晶圓及玻璃基板等之被處理基板實施蝕刻處 理及成膜處理等之程序處理，而使用電漿蝕刻裝置及電漿 CVD成膜裝置等之電漿處理裝置。 第1 7圖係傳統所使用之平行平板型電漿處理裝置。 該電漿處理裝置之構成上，係在由例如鋁等所構成之處理 容器1 1內，配設兼做用以構成氣體供應部之氣體蓮蓬頭 使用之上部電極1 2，而且，配設與該上部電極1 2相對之 φ 兼做基板10之載置台使用之下部電極13。上部電極12之 構成上，係利用絕緣材1 4而對處理容器1 1呈充份電性浮 動之狀態，並爲經由整合電路（匹配電路）1 5連結於高頻電 源1 7之陰極。 下部電極1 3之構成上，係經由導電路1 8連結於處理 容器11之陽極。該導電路18之構成上，以該實例而言， 係由軸1 8 a、支持板1 8 b、以及摺體1 8 c所構成。其次， 處理容器1 1之上部側係經由接地之殻體之匹配箱1 6連結 於高頻電源1 7，更具體而言，係利用連結於用以連結高頻 -5- 200540987 (2) 電源1 7及匹配箱1 6之同軸電纜之外部層來進行接地。 第1 8圖係第1 7圖之電漿處理裝置之高頻電流之導電 路之等效電路。處理容器1 1內產生電漿時，因爲上部電 極1 2及下部電極1 3間會出現電容耦合，來自高頻電源1 7 之高頻電流之路徑爲整合電路15 —上部電極12 —電漿4下 部電極13 —導電路18 —處理容器11之壁部-> 匹配箱16-> 接地。 φ 然而，處理對象之基板當中之液晶顯示等之扁平板用 玻璃基板呈現愈來愈大型化之傾向，今後可能需要處理例 如0.5坪大小之物，處理容器1 1若因此而大型化時，處 理容器11之電感成分會變大，因此，上部電極12及下部 電極1 3間之結合會變弱，上部電極1 2及處理容器1 1之 壁部之間可能產生電漿（第1 8圖中標示成電容耦合）。若如 上所述而產生電漿，則處理容器11內之電漿會偏離至週 邊，結果，無法對基板1 〇實施高面內均一性之處理，甚 Φ 至使處理容器11之內壁或內部部品容易受損或消耗。 另一方面，專利文獻1記載著以下之技術，亦即，爲 了控制電漿之擴散狀態，在下部電極及接地之間配設阻抗 調整電路，然而’該技術在成膜時及淸除時係以改變阻抗 調整電路之設定來獲得符合各程序之形狀之電漿，並未著 眼於上述課題，且未記載解決對策。 [專利文獻1]日本特開平1 1 -3 1 6 8 5號公報：段落0014 【發明內容】 -6 - 200540987 (3) 本發明有鑑於上述情形，故提供如下所示之電漿處理 裝置及電漿處理方法，亦即，可抑制陰極及處理容器之壁 部間產生電漿，產生高均一性之電漿而對基板實施高面內 均一性之電漿處理。 本發明係一種電漿處理置，其目的係在處理容器內利 用高頻電力實施處理氣體之電漿化，利用該電漿對基板進 行處理，其特徵爲具有：位於該處理容器內而與該處理容 $ 器爲絕緣且爲上下相對配設之陰極及陽極；其一端側經由 整合電路連結於前述陰極之高頻電源；以及其一端側連結 於前述陽極且另一端側連結於前述處理容器之含有電容成 分之阻抗調整部；且，基板載置於前述陰極及陽極當中之 位於下方側之電極上，阻抗調整部以使從陰極經由電漿、 陽極、及處理容器之壁部至前述整合電路之接地殼體爲止 之阻抗値小於從陰極經由電漿及處理容器之壁部至前述整 合電路之接地殼體爲止之阻抗値之方式調整該阻抗値。 φ 「陰極及陽極與處理容器爲絕緣」係表示阻抗調整部 以外之部位相對於處理容器爲充份電性浮動。 此外，後面亦將從陰極經由電漿、陽極、及處理容器 之壁部至前述整合電路之接地殼體爲止之路徑稱爲相對於 基板之電漿爲均一之方向之路徑。此外，後面亦將從陰極 經由電漿及處理容器之壁部至前述整合電路之接地殼體爲 止之路徑稱爲相對於壁部之電漿密度較高之路徑（亦即， 相對於基板之電漿爲不均一之路徑）。 此外，其他發明係一種電漿處理置，其目的係在處理I 200540987 (1) IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a plasma processing apparatus and a plasma processing apparatus for plasma-processing a processing gas using high-frequency power and performing a process such as etching on a substrate using the plasma. Approach. [Prior art] In the manufacturing steps of flat plates such as semiconductor elements and liquid crystal display devices, plasma etching equipment is used to perform process processing such as etching treatment and film formation processing on substrates such as semiconductor wafers and glass substrates. And plasma CVD film forming equipment. Fig. 17 is a parallel flat-plate type plasma processing device conventionally used. The structure of the plasma processing device is arranged in a processing container 11 made of, for example, aluminum, etc., and an upper electrode 12 is also used as a gas shower head for forming a gas supply part. The opposite φ of the upper electrode 12 also serves as a mounting table for the substrate 10, and the lower electrode 13 is used. The structure of the upper electrode 12 is a state in which the processing container 11 is fully electrically floating by using an insulating material 14 and is a cathode connected to the high-frequency power source 17 through an integrated circuit (matching circuit) 15. The structure of the lower electrode 13 is connected to the anode of the processing container 11 via a conductive circuit 18. The conductive circuit 18 is constituted by a shaft 18a, a support plate 18b, and a folded body 18c in this example. Secondly, the upper side of the processing container 11 is connected to a high-frequency power source 17 through a matching box 16 of a grounded casing, and more specifically, it is connected to a high-frequency-5-200540987 (2) power source. Ground the external layers of the coaxial cables 17 and 16 of the matching box. Fig. 18 is an equivalent circuit of a high-frequency current conducting circuit of the plasma processing apparatus of Fig. 17. When the plasma is generated in the processing vessel 1 1, because capacitive coupling occurs between the upper electrode 12 and the lower electrode 13, the path of the high-frequency current from the high-frequency power source 17 is the integrated circuit 15 —the upper electrode 12 —the plasma 4 The lower electrode 13-the conductive circuit 18-the wall portion of the processing container 11-> the matching box 16-is grounded. φ However, flat substrate glass substrates such as liquid crystal displays among substrates to be processed tend to become larger and larger. In the future, it may be necessary to process objects of the size of 0.5 tsubo. The inductance component of the container 11 becomes larger. Therefore, the bonding between the upper electrode 12 and the lower electrode 13 becomes weaker, and a plasma may be generated between the upper electrode 12 and the wall portion of the processing container 11 (Figure 18). (Labeled as capacitive coupling). If the plasma is generated as described above, the plasma in the processing container 11 will deviate to the periphery, and as a result, the substrate 10 cannot be treated with high in-plane uniformity, and even the inner wall or the inside of the processing container 11 cannot be processed. Parts are easily damaged or consumed. On the other hand, Patent Document 1 describes a technique in which an impedance adjustment circuit is provided between the lower electrode and the ground in order to control the diffusion state of the plasma. However, this technique is used during film formation and eradication. By changing the settings of the impedance adjustment circuit to obtain a plasma that conforms to each program, the above-mentioned problems are not focused on, and no solution is described. [Patent Document 1] Japanese Unexamined Patent Publication No. 1 1 -3 1 6 8 5: Paragraph 0014 [Summary of the Invention] -6-200540987 (3) In view of the above situation, the present invention provides a plasma processing apparatus and The plasma processing method can suppress the generation of plasma between the cathode and the wall portion of the processing container, generate plasma with high uniformity, and perform plasma processing with high in-plane uniformity on the substrate. The present invention relates to a plasma treatment device. The purpose of the present invention is to plasma-process a processing gas in a processing container using high-frequency power, and use the plasma to process a substrate. The processing vessel is an insulated and oppositely disposed cathode and anode; one end side is connected to the high-frequency power source of the cathode through an integrated circuit; and one end side is connected to the anode and the other end side is connected to the processing container. Impedance adjustment section containing a capacitor component; and the substrate is placed on the electrode on the lower side among the cathode and anode, and the impedance adjustment section passes the cathode through the plasma, the anode, and the wall portion of the processing container to the integrated circuit. The impedance 为止 until the grounded casing is smaller than the impedance 从 from the cathode through the plasma and the wall of the processing container to the grounded casing of the integrated circuit described above. φ "The cathode and anode are insulated from the processing vessel" means that the parts other than the impedance adjustment part are fully electrically floating relative to the processing vessel. In addition, the path from the cathode through the plasma, the anode, and the wall of the processing container to the grounded shell of the integrated circuit is referred to as a path with a uniform direction with respect to the plasma of the substrate. In addition, the path from the cathode through the plasma and the wall of the processing container to the grounded shell of the integrated circuit is referred to as the path with higher plasma density relative to the wall (that is, the voltage relative to the substrate). Slurry is an uneven path). In addition, other inventions are a plasma treatment device, the purpose of which is to treat

I 200540987 (4) 容器內利用高頻電力實施處理氣體之電漿化，利用該電漿 對基板進行處理，其特徵爲具有：位於該處理容器內而與 該處理容器爲絕緣且爲上下相對配設之陰極及陽極；其一 端側經由整合電路連結於前述陰極之高頻電源；以及其一 端側連結於前述陽極且另一端側連結於前述處理容器之含 有電容成分之阻抗調整部；且，基板載置於前述陰極及陽 極當中之位於下方側之電極上，阻抗調整部以使從陰極經 φ 由電漿、陽極、及處理容器之壁部至前述整合電路之接地 殻體爲止之阻抗値爲最小之方式調整該阻抗値。「從陰極 經由電漿、陽極、及處理容器之壁部至前述整合電路之接 地殼體爲止之阻抗値爲最小」係包含大致爲最小時，例如 ，亦包含最小値之2%以內之値。 此外，本發明亦適用於上部電極及下部電極雙方皆連 結著高頻電源之上下2頻率之構成。此時，本發明係一種 電漿處理置，其目的係在處理容器內利用高頻電力實施處 φ 理氣體之電漿化，利用該電漿對基板進行處理，其特徵爲 具有：位於該處理容器內而與該處理容器爲絕緣且爲上下 相對配設之上部電極及下部電極；其一端側經由第1整合 電路連結於前述上部電極之10MHz〜30MHz之第1高頻電 源；其一端側經由第2整合電路連結於前述下部電極之 2 Μ Η z〜6 Μ Η z之第2高頻電源；其一端側連結於前述下部 電極且；另一端側連結於前述處理容器之含有電容成分之 第1阻抗調整部；以及其一端側連結於前述上部電極且另 一端側連結於前述處理容器之含有電容成分之第2阻抗調 -8 - 200540987 (5) 整部；且，基板載置於前述下部電極上，第1阻抗調整部 以使從前述上部電極經由電漿、下部電極、及處理容器之 壁部至前述第1整合電路之接地殼體爲止之第1高頻電源 之頻率之阻抗値小於從上部電極經由電漿及處理容器之壁 部至前述第1整合電路之接地殼體爲止之第1高頻電源之 頻率之阻抗値之方式調整該阻抗値，第2阻抗調整部以使 從前述下部電極經由電漿、上部電極、及處理容器之壁部 φ 至前述第2整合電路之接地殻體爲止之第2高頻電源之頻 率之阻抗値小於從下部電極經由電漿及處理容器之壁部至 前述第2整合電路之接地殼體爲止之第2高頻電源之頻率 之阻抗値之方式調整該阻抗値。 此外，上下2頻率之構成時之其他發明係一種電漿處 理置，其目的係在處理容器內利用高頻電力實施處理氣體 之電漿化，利用該電漿對基板進行處理，其特徵爲具有： 位於該處理容器內而與該處理容器爲絕緣且爲上下相對配 φ 設之上部電極及下部電極；其一端側經由第1整合電路連 結於前述上部電極之10MHz〜30 MHz之第1高頻電源；其 一端側經由第2整合電路連結於前述下部電極之2MHz〜 6MHz之第2高頻電源；其一端側連結於前述下部電極且 另一端側連結於前述處理容器之含有電容成分之第1阻抗 調整部；以及其一端側連結於前述上部電極且另一端側連 結於前述處理容器之含有電容成分之第2阻抗調整部；且 ，基板載置於前述下部電極上，第1阻抗調整部以使從上 部電極經由電漿、下部電極、及處理容器之壁部至前述第 -9 - 200540987 (6) 1整合電路之接地殼體爲止之第1高頻電源之頻率之阻抗 値爲最小之方式調整該阻抗値，此外第2阻抗調整部以使 從下部電極經由電漿、上部電極、及處理容器之壁部至前 述第2整合電路之接地殼體爲止之第2高頻電源之頻率之 阻抗値爲最小之方式調整該阻抗値。 此外，本發明亦適用於連結著下部電極第1及第2高 頻電源之下部2頻率之構成。此時，本發明係一種電漿處 φ 理置，其目的係在處理容器內利用高頻電力實施處理氣體 之電漿化，利用該電漿對基板進行處理，其特徵爲具有： 位於該處理容器內而與該處理容器爲絕緣且爲上下相對配 設之上部電極及下部電極；其一端側經由第1整合電路連 結於前述下部電極之IOMHz〜30MHz之第1高頻電源；其 一端側經由第2整合電路連結於前述下部電極之2MHz〜 6MHz之第2高頻電源；以及其一端側連結於前述上部電 極且另一端側連結於前述處理容器之含有電容成分之第1 φ 阻抗調整部及第2阻抗調整部；且，基板載置於前述下部 電極上，第1阻抗調整部以使從下部電極經由電漿、上部 電極、及處理容器之壁部至前述第1整合電路之接地殼體 爲止之第1高頻電源之頻率之阻抗値小於從下部電極經由 電漿及處理容器之壁部至前述第1整合電路之接地殼體爲 止之第1高頻電源之頻率之阻抗値之方式調整該阻抗値， 第2阻抗調整部以使從下部電極經由電漿、上部電極、及 處理容器之壁部至前述第2整合電路之接地殼體爲止之第 2高頻電源之頻率之阻抗値小於從下部電極經由電漿及處 -10- 200540987 (7) 理容器之壁部至前述第2整合電路之接地殼體爲止之第2 高頻電源之頻率之阻抗値之方式調整該阻抗値。 此外，下部2頻率之構成時之其他發明係一種電漿處 理置，其目的係在處理容器內利用高頻電力實施處理氣體 之電漿化，利用該電漿對基板進行處理，其特徵爲具有： 位於該處理容器內而與該處理容器爲絕緣且爲上下相對配 設之上部電極及下部電極；其一端側經由第1整合電路連 φ 結於前述下部電極之10MHz〜30MHz之第1高頻電源；其 一端側經由第2整合電路連結於前述下部電極之2MHz〜 6MHz之第2高頻電源；以及其一端側連結於前述上部電 極且另一端側連結於前述處理容器之含有電容成分之第1 阻抗調整部及第2阻抗調整部；且，基板載置於前述下部 電極上，第1阻抗調整部以使從下部電極經由電漿、上部 電極、及處理容器之壁部至前述第1整合電路之接地殼體 爲止之阻抗値爲最小之方式調整該阻抗値，第2阻抗調整 • 部以使從下部電極經由電漿、上部電極、及處理容器之壁 部至前述第2整合電路之接地殻體爲止之阻抗値爲最小之 方式調整該阻抗値。 上述各電漿處理裝置以相對於基板之電漿爲均一之方 向之路徑之阻抗値小於相對於壁部之電漿密度較高之路徑 (亦即，相對於基板之電漿爲不均一之路徑）之阻抗値之方 式調整該阻抗値時，以及，以相對於基板之電漿爲均一之 方向之路徑之阻抗値爲最小之方式調整該阻抗値時，各電 漿處理裝置之各部皆實施如下所示之控制。 -11 - 200540987 (8) 亦即’各阻ί/L g周整部利用調整各頻率之高頻之阻抗値 來改變流入陽極之各頻率之高頻之電流値時，應以可得到 該最大値之1 〇 %以內之値之方式設定阻抗値。阻抗調整部 之另一端側連結於處理容器之部位，例如，若陽極爲下部 電極’則只要連結至處理容器之底部即可。該連結部位若 太接近陰極，因爲陰極及連結部位之間容易產生電漿而使 配設阻抗調整部失去意義’例如，應連結於與處理容器之 ^ 陽極爲相同咼度或較高之與陽極爲相反側之部位（陽極爲 下部電極時，爲下方側，陽極爲上部電極時，爲上方側） 〇 阻抗調整部之構成上，例如，係利用可變電容器等來 改變阻抗値，亦可以由當做配設於陽極及處理容器之例如 內面間之電容成分之例如電介質板等所構成。阻抗調整部 可改變阻抗値時，其構成上亦可配設控制部，用以儲存以 使電漿處理之類別及阻抗調整部之調整値（配設著第1及 • 第2阻抗調整部之發明時，第1阻抗調整部之調整値及第 2阻抗調整部之調整値）互相對應爲目的之資料，讀取對應 於選取之電漿處理之類別之阻抗調整値輸出以調整阻抗調 整部爲目的之控制信號。 本發明之構成上，應使用複數個阻抗調整部，各阻抗 調整部之一端側連結於陽極之縱向上相互隔離之部位。此 外，應用於上下2頻率之構成之發明之構成上，係使用複 數個第1阻抗調整部，各阻抗調整部之一端側連結於下部 電極之縱向上相互隔離之部位，而且，使用複數個第2阻 -12- 200540987 (9) 抗調整部，各阻抗調整部之一端側連結於上部電極之縱向 上相互隔離之部位。此外，應用於下部2頻率之構成發明 之構成上，係使用複數個第1阻抗調整部，各阻抗調整部 之一端側連結於下部電極之縱向上相互隔離之部位，而且 ，使用複數個第2阻抗調整部，各阻抗調整部之一端側連 結於下部電極之縱向上相互隔離之部位。 如上所示之配設著複數個阻抗調整部之發明，適合應 φ 用於基板面積爲1 m2以上之例如方形基板之處理，此外， 亦十分適合應用於裝置使用之高頻電力之合計値爲10k W 以上者。 依據本發明，可抑制陰極及處理容器之壁部間產生電 漿，產生高均一性之電漿，對基板實施高面內均一性之電 漿處理。 【實施方式】 •(第1實施形態） 針對將本發明之第1實施形態之電漿處理裝置應用於 用以對液晶顯示用玻璃基板實施蝕刻之裝置之實施形態進 行說明。第1圖中，2係例如由表面實施過陽極氧化處理 之鋁所構成之方筒形狀之處理容器。該處理容器2之上部 配設著兼做氣體供應部之氣體蓮蓬頭之上部電極3，該上 部電極3利用沿著處理容器2之上面開口部3 0之開口邊 緣配設之絕緣材3 1，而相對於處理容器2呈現充份電性浮 動之狀態。此外，上部電極3之氣體蓮蓬頭之構成上，經 -13- 200540987 (10) 由氣體供應路徑3 2連結於處理氣體供給部3 3，而且，經 由複數氣孔3 4對處理容器2內供應氣體供應路徑3 2提供 之氣體。 前述上部電極3經由整合電路4 1及導電路40連結於 高頻電源4。此外，配設著圍繞處理容器2之前述開口部 30且其內部收容著整合電路41之匹配箱42。該匹配箱42 之上部延伸出前述導電路40及用以構成同軸電纜44之外 φ 層部43，該外層部43係接地。本實例時，匹配箱42相當 於整合電路之接地殻體。 處理容器2之底部配設著兼做用以載置基板1 〇之載 置台之下部電極5，該下部電極5經由絕緣材5 0獲得支持 部51之支持。因此，下部電極5處於與處理容器2爲充 份電性浮動之狀態。支持部5 1之下面之中央部’配設著 貫通形成於處理容器2之底部之開口部20並向下方延伸 之保護管5 2。該保護管5 2之下面獲得口徑大於該保護管 φ 5 2之導電性支持板5 3之支持’並封閉該保護管5 2。該支 持板53之邊緣固定著導電性之摺體54之下端’而該摺體 54之上端則固定於處理容器2之前述開口部20之開口邊 緣。利用摺體54形成配置著保護管52之密閉內部空間及 大氣側空間，且以圖上未標示之昇降機構利用支持板5 3 昇降載置台5。 下部電極5連結著配設於保護管5 1內之導電路5 5之 一端，該導電路5 5則配設著阻抗調整部6。前述導電路 55之另一端側經由支持板53及摺體54連結於介處理容器 -14- 200540987 (11) 2之底部。處理容器2之上部電極3之例如上面之附近部 位，如前面所述，經由匹配箱42及前述同軸電纜44之外 層部43進行接地。本實例時，上部電極3及下部電極5 分別相當於陰極及陽極。 此外，處理容器2之側壁連結著排氣路2 1，該排氣路 2 1則連結著真空排氣手段22。此外，處理容器2之側壁 配設著以開關基板1 〇之搬運口 23爲目的之閘閥24。 φ 利用如上所述之構成，高頻電流會流過高頻電源4 — 整合電路414上部電極3 —電漿4下部電極5->阻抗調整部 6 —處理容器2->匹配箱42 —同軸電纜44之外層部43->接 地之路徑，然而，如先前技術項記載所示，因爲可能發生 高頻電流從上部電極3經由電漿流至處理容器2之壁部之 情形，故利用阻抗調整部6調整從下部電極5至處理容器 2之上部爲止之路徑（回路）之阻抗。 第2圖係第1圖之電漿處理裝置之針對高頻電流之等 φ 效電路。因爲處理容器2可視爲電感成分，故以電感來表 示。C 1係以電容成分來標示上部電極3及下部電極5間 之電漿，C2係以電容成分來表示上部電極3及處理容器2 之壁部間之電漿。 其次，該實施形態之目的，係利用阻抗調整部6之電 容成分（C)抵銷電漿之電容（C1)及下部電極5至處理容器2 之上部爲止之路徑之電感（L)，前述路徑之阻抗爲j^l/ω Cl + Ω l-1/ω C)，故小於包含上部電極3 —電漿->處理容器 2之壁部之相對於壁部之電漿密度較高之路徑之阻抗。因 -15- 200540987 (12) 此’阻抗調整部6係含有電容成分之物，該形態可以爲例 如使用第3圖A所示之可變電容器6 1、使用第3圖B所 示之固定電容之電容器62及可變電容器61之組合、使用 第3圖C所示之固定電容之電容器62、使用第3圖D所 示之可變電容器6 1及可變電容器63之組合、以及使用第 3圖E所示之可變電感之電容器64及固定電容之電容器 62等各種構成。只使用固定電容之電容器62時，亦可以 φ 利用更換電容不同之電容器來調整阻抗値。 降低上述之相對於基板之電漿爲均一之方向之路徑之 阻抗時’由後述之實驗例可知，求其變更阻抗調整部6之 阻抗値時流過該路徑之電流値，並以使其成爲最大値之方 式來進行設定最爲理想，亦即，相對於基板之電漿爲均一 之方向之路徑之阻抗爲最小之方式來進行設定最爲理想， 然而，實際上只要求電流之最大値之2 %以內即可，至少 要以電流之最大値之10%以內之方式來進行設定。 • 針對此種實施形態之作用效果進行說明。首先，打開 閘閥24從圖上未標示之隔絕室以圖上未標示之搬運臂將 基板10搬入處理容器2內，利用貫通下部電極5之圖上 未標示之昇降銷間之連動將基板1 0載置於下部電極5上 。其次，關閉閘閥24，從處理氣體供給部3 3經由上部電 極3對處理容器2內供應處理氣體，而且，利用真空排氣 手段22實施真空排氣而使處理容器2內維持於特定壓力 。其次，以高頻電源4對上部電極3及下部電極5之間施 加例如1〇1^心〜30141^、101^〜之高頻電力，會激勵處理 -16- 200540987 (13) 氣體而產生電漿。處理氣體係例如由含有鹵素氣體之例如 鹵素化合物所構成之氣體、氧氣、以及氬氣等。 因爲產生電漿，故高頻電流會流過上部電極電漿 ->下部電極5->阻抗調整部6 —處理容器2 —匹配箱42 —同 軸電纜44之外層部43->接地之所謂相對於基板之電漿爲 均一之方向之路徑，然而，該路徑之阻抗値係以成爲大致 最小値之方式來進行設定，故會小於上部電極3 —電漿 φ 處理容器2 —匹配箱42 —同軸電纜44之外層部43 —接地之 路徑之阻抗値，而使上部電極3及處理容器2之壁部間不 易產生電漿。結果，電漿集中於上部電極3及下部電極5 之間，而使基板1 〇上之電漿具有高面內均一性。對基板 1 〇之表面利用該電漿實施例如蝕刻處理，因 電漿之面向 均一性較高，故蝕刻速度之面內均一性亦較高，因此，可 對面內實施均一之蝕刻。此外，亦可抑制處理容器2之內 壁及內部部品之受損及消耗。 φ 此外，本實施形態係如第4圖所示，依處理之類別將 阻抗調整部6之適當調整値以例如圖表之方式儲存於控制 部7之記憶部，選取處理之類別後，從例如圖表之資料讀 取對應該處理之前述適當調整値，控制部7對用以驅動例 如可變電容器之調正機構之阻抗調整部6之致動器之馬達 輸出控制信號。具體實例如下所示，亦即，連續實施不同 之蝕刻處理時針對各蝕刻處理決定前述適當設定値之實例 、或實施連續成膜程序時針對各成膜處理決定前述適當設 定値之實例等。 -17- 200540987 (14) 依據本實施形態，對陰極及陽極間施加高頻電力而產 生電漿並利用該電漿對基板實施處理時，在陽極（與連結 著高頻電源之電極相對之電極爲陽極）及處理容器之間配 設含有電容成分之阻抗調整部，使從陰極經由電漿、陽極 、及處理容器之壁部至整合電路之接地殼體爲止之阻抗値 小於從陰極經由電漿及處理容器之壁部至前述整合電路之 接地殼體爲止之阻抗値，故可抑制陰極及處理容器之壁部 φ 間之電漿之產生，產生高均一性之電漿而可對基板實施高 面向均一性之電漿處理。 (第1實施形態之變形例） 本實施形態之變形例之電漿處理裝置如第5圖A及第 5圖B所示，配設著例如3個阻抗調整部6A、6B、6C之 複數個阻抗調整部6。本變形例之電漿處理裝置時，阻抗 調整部6A、6B、6C之一端側應分別連結於下部電極5之 φ 縱向（寬度方向）上之相互隔離之部位PA、PB、PC。大致 而言，將方形之基板1 〇以例如第5圖B之1點線分割成 3區域，針對各分割區域將與處理容器2間之阻抗設定成 適當値。該適當値係可得到高均一性之電漿之値，例如， 預先重複實施試誤來針對各處理找出各阻抗調整部6A、 6B、6C之適當値。 以更模式化之實例而言，例如中央之電漿較強時，增 加對應於中央部之阻抗調整部6B之電容値而使中央部之 下部電極5及處理容器2間之阻抗値變大，而且，減少對 -18- 200540987 (15) 應於邊緣部之阻抗調整部6A、6C之電容値，藉此，實施 將電漿較強部份從中央移至邊緣側之調整。亦即，此種實 施形態時，係以含有阻抗調整部6A、6B、6C之倂聯電路 之阻抗値之如前所述之相對於基板之電漿爲均一之方向之 路徑之阻抗値小於經由上部電極3 —電漿處理容器2之 壁部之該相對於壁部之電漿密度較高之路徑之阻抗値之方 式來設定阻抗調整部6A、6B、6C之各阻抗値爲前提，滿 φ 足該條件並調整各阻抗値，可以對基板1 〇之面方向之電 漿強度進行精細調整，因此，係處理尺寸較大之基板時可 產生高均一性高電漿之極爲有效之技術。本發明者發現， 例如，以扁平板用之方形基板而言，例如基板之面積爲 1 m2以上之大型基板時，很難使電漿在面內處於高均一性 之狀態，若能精細調整電漿之分布，即可提高均一性，而 且，亦可抑制局部之異常放電。其次，尤其是該高頻電力 之合計値爲較大之10kW以上時，很容易發生異常放電， φ 故配設複數個阻抗調整部之構成係極爲有效之方法。 如第5圖A及第5圖B所示，配設阻抗調整部6A、 6B、6C時，應在對應前述部位PA、PB、PC之位置上分 別配設從支持部51下面延伸出來之保護管52 A〜52C，而 且，針對各保護管52 A〜52C配設獨立之支持板53，此外 ，各支持板5 3及處理容器2之間應配設如第1圖所示之 摺體54。 此種下部電極5之阻抗調整區域之分割，並未受限於 3分割，例如，亦可以爲縱橫皆爲2等分，而對整體進行 -19- 200540987 (16) 4分割，再針對各分割區域配設阻抗調整部。 其次，此種實施形態亦應如第6圖所示，將對應於處 理類別之各阻抗調整部6A、6B、6C之各調整値儲存於控 制部7內之記憶部，並對應選取之處理設定各阻抗調整部 6A、6B、6C之阻抗値。 此外，阻抗調整部6亦可不使用可變電容器及固定電 容之電容器等電容元件，而使用如第7圖A〜第7圖C所 φ 示之用以構成電容成分之電介質板等。第7圖A之實例之 構成，係在下部電極5及處理容器2之底部間配設由電介 質之板8所構成之可自由更換之阻抗調整部。該電介質板 8之電容値係以如前所述之滿足路徑之阻抗値之條件來進 行設定。 第7圖B所示之實例係對應使用複數個阻抗調整部 6A、6B、6C之第5圖A之實例，其構成上，中央部（例如 ，平面觀看時爲方形之區域）及邊緣部（平面觀看時爲方形 • 框狀之區域）之電介質之電容不同，亦即，係使用2種類 之電介質板8A、8B。本實例係電介質板之厚度相同而以 變更材質來改變電容，然而，亦可如第7圖C所示，變更 下部電極5之厚度，例如，增加中央部之厚度，而減少該 區域之電介質板8之厚度，藉此，可改變中央部及邊緣部 之電容。 上述實施形態時，高頻電源4係連結於上部電極3側 ，然而，其構成上，亦可以將高頻電源4連結於下部電極 5側。此時，阻抗調整部6連結於上部電極3及處理容器 -20- 200540987 (17) 2之例如上面之上部之間。此時，阻抗調整部6亦可以配 設於上部電極3及處理容器2之側壁部之間，然而，以配 設於較上部電極3爲下側之位置爲佳。第8圖係在此種類 型之裝置配設3個阻抗調整部6 A〜6C之實例。3個阻抗 調整部6 A〜6C之配設位置係對應於例如第5圖A及第5 圖B所示之PA〜PC之位置，然而，阻抗調整部6之數亦 可以爲2個或4個以上。如上所示，阻抗調整部6可以爲 φ 複數亦可以爲1個。 依據本變形例，而爲使用複數個阻抗調整部且各阻抗 調整部之一端側連結於陽極之縱向上相互隔離之部位之構 成時，因爲陽極在基板之面方向上被分割成複數且針對各 分割區域調整阻抗，故與在1個部位調整阻抗相比，可以 實施較精細之電漿分布之調整，因此，可得到高均一性之 電漿。例如，基板之面積爲1 m2以上之大型基板時，很難 使電漿在面內處於高均一性之狀態，若能精細調整電漿之 φ 分布，即可提高均一性，而且，亦可抑制局部之異常放電 。其次，尤其是該高頻電力之合計値爲較大之10kW以上 時，很容易發生異常放電，故配設複數個阻抗調整部之構 成係極爲有效之方法。 (第2實施形態） 本實施形態係針對如第9圖所示之上部電極3側配設 著高頻電源4且下部電極5側亦配設著高頻電源100之上 下2頻率類型之電漿處理裝置進行說明。該電漿處理裝置 •21 - 200540987 (18) 路 而 合 匹 纜 於 源 第 電 有 具 例 殼 4 1 5 脏 頻 局 抗 4 2 係在如第5圖A之構成之下部側保護管5 2 B內實施導電 1 〇 1之配線，在保護管5 2 B之下端側配設匹配箱1 〇 2 ’ 且，該匹配箱102內配設著連結於前述導電路1〇1之整 電路1 〇 3，此外，整合電路1 〇 3連結著高頻電源1 〇 〇。 配箱1 〇 2之下部延伸出導電路1 〇 6、及用以構成同軸電 104之外層部105，該外層部1〇5用以接地。 本實例時，整合電路41及整合電路1 0 3分別相對 φ 第1整合電路及第2整合電路。高頻電源4及高頻電 1 〇〇分別相當於第1高頻電源及第2高頻電源，上側之 1高頻電源4輸出例如10kW之10MHz〜30MHz之高頻 力，下側之第2高頻電源100則輸出例如3kW之2MHz 6MHz之高頻電力。來自第1高頻電源4之高頻電力具 活化處理氣體之機能，來自第2高頻電源1 00之電力則 有使電漿中之離子靠近基板1 〇側之機能。此外，本實 時，匹配箱42及1 02分別相當於第1整合電路之接地 φ 體及第2整合電路之接地殻體。上部電極3及整合電路 間存在第9圖中未標示之高通濾波器，此外，下部電極 及整合電路103間存在低通濾波器，兩高頻電源4、高 電源1 00之間爲對方之高頻成分無法輸入之狀態。此時 從第1高頻電源4觀看時，下部電極5爲陽極，從第2 頻電源100觀看時，上部電極3爲陽極。 其次，上部電極3及匹配箱42之間配設著複數阻 調整部9A及9C，該阻抗調整部9A及9C經由匹配箱 連結於處理容器2之例如天花板之上部。爲了方便圖示 -22- 200540987 (19) 上側之阻抗調整部及下側之阻抗調整部只標示2個9A、 9C(6A、6C)，然而，皆可以配設3個以上或只配設1個。 此外，本實例之匹配箱42相當於以使來自第1高頻電源4 之高頻電流從處理容器2之上部回到高頻電源4爲目的之 第1整合電路41之接地殼體，匹配箱102相當於以使來 自第2高頻電源1 〇〇之高頻電流從處理容器2之下部回到 高頻電源100爲目的之第2整合電路103之接地殼體。 φ 下側之阻抗調整部6A、6C相當於第1阻抗調整部， 配設著只有對應第1高頻電源4之高頻之頻帶之高頻才可 通過之濾波器。此外，上側之阻抗調整部9A、9C相當於 第2阻抗調整部，配設著只有對應第2高頻電源1 00之高 頻之頻帶之高頻才可通過之濾波器。亦即，來自第1高頻 電源4之高頻電流經由高頻電源4 —整合電路41 4上部電 極3->電漿4下部電極阻抗調整部6A、6C —處理容器 2->匹配箱42—同軸電纜44之外層部43->接地之路徑流過 φ ，來自第2高頻電源100之高頻電流則經由高頻電源 1004整合電路103->下部電極5 —電漿上部電極3 —阻抗 調整部 9A、9C —處理容器2 —匹配箱 102->同軸電纜 104 之外層部1 0 5 —接地之路徑流過。 第1阻抗調整部6A、6C係以如前所述之以使從上部 電極3經由電漿、下部電極5、及處理容器2之壁部至匹 配箱42(第1整合電路之接地殻體）爲止之相對於基板之電 漿爲均一之方向之路徑之第1高頻電源4之高頻之阻抗値 小於從上部電極3經由電漿及處理容器2之壁部至匹配箱 -23- 200540987 (20) 42爲止之相對於壁部之電漿密度較高之路徑之第1高頻電 源4之高頻之阻抗値之方式調整該阻抗値。降低上述之相 對於基板之電漿爲均一之方向之路徑之阻抗値時，求取來 自第1高頻電源4之流過相對於基板之電漿爲均一之方向 之路徑之電流値，並以使其成爲最大値之方式來進行設定 最爲理想，亦即，以使相對於基板之電漿爲均一之方向之 路徑之阻抗爲最小之方式來進行設定最爲理想，然而，實 φ 際上只要求電流之最大値之2%以內即可，至少要以電流 之最大値之1 〇%以內來進行設定。相對於基板之電漿爲均 一之方向之路徑之電流値係採用例如以分別連結於阻抗調 整部6A、6C之電流計求取之該電流値之合計値。· 第2阻抗調整部9A、9C係以使從下部電極5經由電 漿、上部電極3、及處理容器2之壁部至匹配箱102爲止 之相對於基板之電漿爲均一之方向之路徑之第2高頻電源 1 〇〇之高頻之阻抗値小於從下部電極5經由電漿及處理容 φ 器2之壁部至匹配箱1 02爲止之相對於壁部之電漿密度較 高之路徑之第2高頻電源1 00之高頻之阻抗値之方式調整 該阻抗値。降低上述相對於基板之電漿爲均一之方向之路 徑之阻抗値時，求取來自第2高頻電源1 0 0之流過相對於 基板之電漿爲均一之方向之路徑之電流値，並以使其成爲 最大値之方式來進行設定最爲理想，然而，實際上只要求 電流之最大値之2%以內即可，至少要以電流之最大値之 10%以內來進行設定。 -24 - 200540987 (21) (第3實施形態） 本實施形態係針對如第10圖所示之下部電極5側配 設著第1高頻電源4及第2高頻電源1 〇〇之下部2頻率類 型之電漿處理裝置進行說明。該電漿處理裝置經由下部電 極5之下側絕緣層50連結著保護管45，該保護管45之下 端側貫通處理容器2之底面，保護管45之下端部連結著 匹配箱42。匹配箱42內配設著2個整合電路41、103， φ 該整合電路4 1及1 03之一端側分別經由配置於保護管45 內之導電路46及1 0 1連結至下部電極5，而且，整合電路 4 1及1 03之另一端側分別連結於第1高頻電源4及第2高 頻電源1〇〇。44及104係如前所述之同軸電纜。來自第1 高頻電源4及第2高頻電源100之高頻電力之頻率及電力 與第9圖所示之實施形態相同。 上部電極3連結著本實例之3個阻抗調整部6 A〜6C 之複數第1阻抗調整部、及本實例之3個阻抗調整部9A φ 〜9C之複數第2阻抗調整部之一端側，而且，該阻抗調 整部6A〜6C及9A〜9C之另一端側經由覆蓋處理容器2 之開口部30之導電性蓋體56連結於處理容器2之例如天 花板之上部。第1阻抗調整部及第2阻抗調整部亦可以配 設1個、2個、或4個以上。本實例之第1阻抗調整部6A 〜6C亦可配設只有對應第1高頻電源4之高頻之頻帶之 高頻可通過之濾波器。此外，第2阻抗調整部9A〜9C亦 可配設只有對應第2高頻電源100之高頻之頻帶之高頻可 通過之濾波器。 -25- 200540987 (22) 此外，本實例之匹配箱42係兼做以使來自第丨高頻 電源4之高頻電流從處理容器2之下部回到高頻電源4爲 目的之第1整合電路之接地殼體、及以使來自第2高頻電 源1 00之高頻電流從處理容器2之下部回到高頻電源i 00 爲目的之第2整合電路之接地殼體使用。 來自第1高頻電源之高頻電流流過高頻電源4 ->整合 電路4 1 —下部電極5 —電漿上部電極3 ->第1阻抗調整部 φ 6A〜6C->處理容器24匹配箱42之路徑，來自第2高頻電 源1 〇 〇之高頻電流則流過高頻電源1 0 0 —整合電路1 0 3 下 部電極電漿·^上部電極第2阻抗調整部9A〜9C — 處理容器匹配箱42之路徑。 第1阻抗調整部6 A〜6C係以使從下部電極5經由電 漿、上部電極3、及處理容器2之壁部至匹配箱42爲止之 相對於基板之電漿爲均一之方向之路徑之第1高頻電源4 之高頻之阻抗値小於從下部電極5經由電漿及處理容器2 φ 之壁部至匹配箱42爲止之相對於壁部之電漿密度較高之 路徑之第1高頻電源4之高頻之阻抗値之方式調整該阻抗 値。降低上述相對於基板之電漿爲均一之方向之路徑之阻 抗値時，求取來自第1高頻電源4之流過相對於基板之電 漿爲均一之方向之路徑之電流値，並以使其成爲最大値之 方式來進行設定最爲理想，亦即，以使相對於基板之電漿 爲均一之方向之路徑之阻抗爲最小之方式來進行設定最爲 理想，然而，實際上只要求電流之最大値之2%以內即可 ，至少要以電流之最大値之1 〇%以內來進行設定。 -26- 200540987 (23) 此外，第2阻抗調整部9 A〜9C係以使從下部電極5 經由電漿、上部電極3、及處理容器2之壁部至匹配箱42 爲止之相對於基板之電漿爲均一之方向之路徑之第2高頻 電源1 〇〇之高頻之阻抗値小於從下部電極5經由電漿及處 理容器2之壁部至匹配箱42爲止之相對於壁部之電漿密 度較高之路徑之第2高頻電源100之高頻之阻抗値之方式 調整該阻抗値。降低上述相對於基板之電漿爲均一之方向 φ 之路徑之阻抗値時，求取來自第2高頻電源1 〇〇之流過相 對於基板之電漿爲均一之方向之路徑之電流値，並以使其 成爲最大値之方式來進行設定最爲理想，亦即，以使相對 於基板之電漿爲均一之方向之路徑之阻抗爲最小之方式來 進行設定最爲理想，然而，實際上只要求電流之最大値之 2%以內，至少要以電流之最大値之10%以內來進行設定。 此外，第8圖〜第1 0圖之實施形態之阻抗調整部亦 可以利用如前所述之第7圖A〜第7圖C之含有電容成分 φ 之電介質來構成。此外，亦可建立第4圖所示之使電漿處 理之類別及阻抗調整部之調整値互相對應之資料，選取電 漿類別時，即自動調整阻抗調整部。 第1 1圖係配設複數阻抗調整部時之配置實例，本實 例係在對應於方形基板10之4角（角部）之4點P1〜P4及 中心部P 5之計5點之部位（該5點之投影區域上）配設阻 抗調整部。I 200540987 (4) Plasma treatment gas is processed in the container using high-frequency power, Use this plasma to process the substrate, It is characterized by: A cathode and an anode which are located in the processing container and are insulated from the processing container and are arranged opposite to each other; One end of the high-frequency power supply connected to the cathode through an integrated circuit; And one end side of which is connected to the anode and the other end side of which is connected to the impedance adjusting portion of the processing container containing a capacitance component; And The substrate is placed on the lower electrode among the cathode and anode, Impedance adjustment unit anode, And the impedance 値 from the wall portion of the processing container to the grounding case of the integrated circuit is adjusted to minimize the impedance 値. "From the cathode through the plasma, anode, And the impedance "from the wall portion of the processing container to the grounding case of the integrated circuit is the smallest" means that when the impedance is approximately the smallest, E.g , Also includes the minimum 値 2%.  In addition, The present invention is also applicable to a configuration in which both the upper electrode and the lower electrode are connected to two frequencies above and below the high-frequency power source. at this time, The present invention is a plasma treatment device, The purpose is to use high-frequency power in the processing vessel to perform plasmaization of the processing gas, Using the plasma to process the substrate, It is characterized by: An upper electrode and a lower electrode are disposed inside the processing container and are insulated from the processing container and are arranged opposite to each other; One end side thereof is connected to the first high-frequency power source of 10 MHz to 30 MHz through the first integrated circuit; One end of the second high-frequency power source is connected to the second high-frequency power source of 2 Μ Η z to 6 Μ Η z through the second integrated circuit; One end side is connected to the lower electrode; The other end side is connected to the first impedance adjusting section containing a capacitive component of the processing container; And the second impedance adjustment containing the capacitive component connected at one end side to the upper electrode and at the other end side to the processing container -8-200540987 (5) the entire part; And The substrate is placed on the lower electrode, The first impedance adjustment unit is configured to pass the plasma from the upper electrode through the upper electrode, Lower electrode, And the impedance 値 of the frequency of the first high-frequency power source from the wall portion of the processing container to the grounding case of the first integrated circuit is smaller than that from the upper electrode through the plasma and the wall portion of the processing container to the grounding case of the first integrated circuit The impedance 値 of the frequency of the first high-frequency power source until the body is adjusted, The second impedance adjustment unit is configured to pass the plasma from the lower electrode through Upper electrode, And the impedance of the second high-frequency power source from the wall portion φ of the processing container to the grounding case of the second integrated circuit is smaller than the connection from the lower electrode through the plasma and the wall portion of the processing container to the second integrated circuit The impedance 値 is adjusted in a manner of the impedance 値 of the frequency of the second high-frequency power source up to the ground case.  In addition, The other invention when the structure of the upper and lower frequencies is a plasma processing device, The purpose is to use high-frequency power to plasma the processing gas in the processing vessel. Using the plasma to process the substrate, It is characterized by:  The upper and lower electrodes are located in the processing container and are insulated from the processing container. One end side thereof is connected to the first high-frequency power source of 10 MHz to 30 MHz through the first integrated circuit; One end side of the second high-frequency power source of 2 MHz to 6 MHz is connected to the lower electrode through a second integrated circuit; One end side is connected to the lower electrode and the other end side is connected to the first impedance adjustment section containing a capacitance component of the processing container; And a second impedance adjusting portion containing a capacitive component connected to the upper electrode at one end side and to the processing electrode at the other end side; And The substrate is placed on the lower electrode, The first impedance adjusting section is configured to pass the upper electrode through the plasma, Lower electrode, And the impedance 频率 of the frequency of the first high-frequency power source from the wall portion of the processing container to the aforementioned -9-200540987 (6) 1 integrated circuit grounding case, the impedance 调整 is adjusted in a manner that minimizes, In addition, the second impedance adjustment unit is configured to pass Upper electrode, And the impedance 値 of the frequency of the second high-frequency power source from the wall portion of the processing container to the grounding case of the second integrated circuit is adjusted to be the smallest.  In addition, The present invention is also applicable to a configuration in which the lower electrodes are connected to the first and second high-frequency power sources at the lower frequency of the second frequency. at this time, The invention is a kind of φ treatment at the plasma, The purpose is to use high-frequency power to plasma the processing gas in the processing vessel. Using the plasma to process the substrate, It is characterized by:  An upper electrode and a lower electrode are disposed in the processing container and are insulated from the processing container and are arranged opposite to each other; One end side thereof is connected to the first high-frequency power source of 10 MHz to 30 MHz of the lower electrode through a first integrated circuit; One end side of the second high-frequency power source of 2 MHz to 6 MHz is connected to the lower electrode through a second integrated circuit; And a first φ impedance adjustment section and a second impedance adjustment section containing a capacitive component connected at one end side to the upper electrode and at the other end side to the processing container; And The substrate is placed on the lower electrode, The first impedance adjustment unit is configured to pass the plasma from the lower electrode through Upper electrode, And the impedance 値 of the frequency of the first high-frequency power source from the wall portion of the processing container to the grounding case of the first integrated circuit is smaller than the grounding shell of the first integrated circuit from the lower electrode through the plasma and the wall portion of the processing container The impedance 値 of the frequency of the first high-frequency power source until the body is adjusted,  The second impedance adjustment unit is configured to pass from the lower electrode through the plasma, Upper electrode, And the impedance of the frequency of the second high-frequency power source from the wall portion of the processing container to the grounding case of the aforementioned second integrated circuit is smaller than that from the lower electrode through the plasma and processing -10- 200540987 (7) the wall portion of the processing container to The impedance 値 is adjusted in the manner of the impedance 値 of the frequency of the second high-frequency power source up to the grounded casing of the second integrated circuit.  In addition, The other invention in the composition of the lower 2 frequencies is a plasma processing device. The purpose is to use high-frequency power to plasma the processing gas in the processing vessel. Using the plasma to process the substrate, It is characterized by:  An upper electrode and a lower electrode are disposed in the processing container and are insulated from the processing container and are arranged opposite to each other; One end side is connected to the first high-frequency power source of 10MHz to 30MHz connected to the lower electrode through a first integrated circuit; One end side of the second high-frequency power source of 2 MHz to 6 MHz is connected to the lower electrode through a second integrated circuit; And a first impedance adjustment section and a second impedance adjustment section containing a capacitive component connected at one end side to the upper electrode and at the other end side to the processing container; And The substrate is placed on the lower electrode, The first impedance adjustment unit is configured to pass the plasma from the lower electrode through Upper electrode, And the impedance 値 of the wall portion of the processing container to the grounding case of the first integrated circuit is adjusted to minimize the impedance 値, 2nd impedance adjustment unit to pass the plasma from the lower electrode, Upper electrode, And the impedance 为止 of the wall portion of the processing container to the grounding case of the second integrated circuit is adjusted to be the smallest.  The impedance 値 of each of the above-mentioned plasma processing apparatuses in a uniform direction with respect to the plasma of the substrate is smaller than a path with a higher plasma density with respect to the wall (that is, When the impedance 値 is adjusted relative to the impedance of the substrate (the plasma is a non-uniform path), as well as, When the impedance 路径 of the path in a direction uniform with respect to the plasma of the substrate is minimized, Each part of each plasma processing apparatus performs the control shown below.  -11-200540987 (8) In other words, when the entire resistance 阻 / L g cycle adjusts the high frequency impedance 値 of each frequency to change the high frequency current 値 of each frequency flowing into the anode, The impedance 设定 should be set such that 値 is within 10% of the maximum 値. The other end side of the impedance adjustment section is connected to the processing container. E.g, If the anode is a lower electrode ', it only needs to be connected to the bottom of the processing container. If the joint is too close to the cathode, Plasma is likely to be generated between the cathode and the connection part, so it would be meaningless to provide an impedance adjustment part ’, for example, It should be connected to the ^ anode with the same degree as the treatment container or a higher side opposite to the anode (when the anode is the lower electrode, Is the lower side, When the anode is the upper electrode, (Upper side) 〇 The structure of the impedance adjustment section, E.g, Is to change the impedance using variable capacitors, It may also be constituted by, for example, a dielectric plate or the like as a capacitor component disposed between the anode and the processing container, for example, the inner surface. When the impedance adjustment section can change the impedance, It can also be equipped with a control unit. It is used to store the type of plasma processing and the adjustment of the impedance adjustment unit (when equipped with the inventions of the first and • second impedance adjustment units, The data of the first impedance adjustment unit (the second impedance adjustment unit and the second impedance adjustment unit): Read the impedance adjustment corresponding to the selected plasma processing category and output the control signal for the purpose of adjusting the impedance adjustment section.  In the constitution of the present invention, Use multiple impedance adjustment sections, One end of each impedance adjusting portion is connected to a portion of the anode that is isolated from each other in the longitudinal direction. In addition, Applied to the constitution of the invention of the constitution of the upper and lower frequencies, Using a plurality of first impedance adjusting sections, One end of each impedance adjusting portion is connected to a portion of the lower electrode that is isolated from each other in the longitudinal direction. and, Use a plurality of second resistances -12- 200540987 (9) Anti-adjustment section, One end of each impedance adjusting portion is connected to a portion of the upper electrode that is isolated from each other in the longitudinal direction. In addition, Applied to the constitution of the invention of the lower 2 frequencies, Using a plurality of first impedance adjusting sections, One end of each impedance adjusting portion is connected to a portion of the lower electrode that is isolated from each other in the longitudinal direction. And, Using a plurality of second impedance adjustment sections, One end of each impedance adjusting portion is connected to a portion of the lower electrode that is isolated from each other in the longitudinal direction.  The invention shown above is equipped with a plurality of impedance adjusting sections, Suitable for φ used for the processing of square substrates with a substrate area of 1 m2 or more, In addition,  It is also very suitable for applications where the total high frequency power used is 値 10k W or more.  According to the invention, It can suppress the generation of plasma between the cathode and the wall of the processing container. Generate high uniformity plasma, The substrate is subjected to a plasma treatment with high in-plane uniformity.  [Embodiment] • (First Embodiment) An embodiment in which a plasma processing apparatus according to a first embodiment of the present invention is applied to an apparatus for etching a glass substrate for a liquid crystal display will be described. In Figure 1, 2 is a square-tube-shaped processing container made of, for example, anodized aluminum. The upper part of the processing container 2 is provided with an upper electrode 3 for a gas shower head which also serves as a gas supply part. The upper electrode 3 uses an insulating material 31 arranged along the opening edge of the upper opening 30 of the processing container 2. It is in a state of being sufficiently electrically floating relative to the processing container 2. In addition, On the structure of the gas shower head of the upper electrode 3, Via -13- 200540987 (10) is connected to the process gas supply unit 3 3 via the gas supply path 32, and, The gas supplied from the plurality of gas holes 34 to the gas supply path 32 in the processing container 2 is supplied.  The upper electrode 3 is connected to a high-frequency power source 4 via an integrated circuit 41 and a conducting circuit 40. In addition, A matching box 42 is provided which surrounds the aforementioned opening portion 30 of the processing container 2 and houses an integrated circuit 41 therein. The upper portion of the matching box 42 extends the aforementioned conducting circuit 40 and a φ layer portion 43 outside the coaxial cable 44. The outer layer portion 43 is grounded. In this example, The matching box 42 is equivalent to a grounded case of an integrated circuit.  The lower part of the processing container 2 is provided with a lower electrode 5 which also serves as a mounting table for mounting the substrate 10, The lower electrode 5 is supported by the supporting portion 51 via an insulating material 50. therefore, The lower electrode 5 is in a state of being sufficiently electrically floating with the processing container 2. A lower portion of the support portion 51 is provided with a protection tube 52 extending through the opening portion 20 formed at the bottom of the processing container 2 and extending downward. Below the protective tube 5 2 is obtained a support of a conductive support plate 5 3 having a diameter larger than that of the protective tube φ 5 2, and the protective tube 52 is closed. The lower end of the conductive folded body 54 is fixed to the edge of the support plate 53 and the upper end of the folded body 54 is fixed to the opening edge of the aforementioned opening portion 20 of the processing container 2. The folded body 54 is used to form a closed internal space and an atmosphere-side space in which the protection tube 52 is arranged. In addition, the supporting platform 5 3 is used to raise and lower the mounting table 5 by using a lifting mechanism not shown in the figure.  The lower electrode 5 is connected to one end of a conductive circuit 5 5 arranged in the protection tube 51. The conducting circuit 55 is provided with an impedance adjusting section 6. The other end of the conductive circuit 55 is connected to the bottom of the processing container -14-200540987 (11) 2 through a support plate 53 and a folded body 54. Near the upper electrode 3 of the processing container 2 As mentioned earlier, Grounding is performed via the matching box 42 and the outer layer portion 43 of the coaxial cable 44 described above. In this example, The upper electrode 3 and the lower electrode 5 correspond to a cathode and an anode, respectively.  In addition, The side wall of the processing container 2 is connected to the exhaust path 21, The exhaust path 21 is connected to a vacuum exhaust means 22. In addition, The side wall of the processing container 2 is provided with a gate valve 24 for the purpose of opening and closing the transfer port 23 of the substrate 10.  φ uses the structure described above, High-frequency current will flow through the high-frequency power source 4 — integrated circuit 414 upper electrode 3 — plasma 4 lower electrode 5-> Impedance adjustment section 6 -Processing container 2- > Matching box 42-outer layer portion 43 of the coaxial cable 44- > The path to ground however, As shown in the previous technical records, Because a high-frequency current may flow from the upper electrode 3 to the wall portion of the processing container 2 through the plasma, Therefore, the impedance of the path (circuit) from the lower electrode 5 to the upper portion of the processing container 2 is adjusted by the impedance adjusting section 6.  Figure 2 is the equivalent φ-effect circuit for the high-frequency current of the plasma processing device of Figure 1. Because the processing container 2 can be regarded as an inductance component, Therefore, it is expressed by inductance. C 1 is the capacitor between the upper electrode 3 and the lower electrode 5. C2 represents the plasma between the upper electrode 3 and the wall portion of the processing container 2 with a capacitance component.  Secondly, The purpose of this embodiment, The capacitance component (C) of the impedance adjustment section 6 is used to offset the capacitance (C1) of the plasma and the inductance (L) of the path from the lower electrode 5 to the upper portion of the processing container 2. The impedance of the aforementioned path is j ^ l / ω Cl + Ω l-1 / ω C), So less than the upper electrode 3 —plasma-> The impedance of the path of the wall portion of the processing container 2 with respect to the plasma density of the wall portion is higher. Because -15- 200540987 (12) This' impedance adjustment section 6 is a thing containing a capacitor component, This form can be, for example, using the variable capacitor 61 shown in FIG. 3A. A combination of a fixed capacitor capacitor 62 and a variable capacitor 61 shown in FIG. 3B, Use fixed capacitors 62 shown in Figure 3C, Using a combination of the variable capacitor 61 and the variable capacitor 63 shown in FIG. 3D, In addition, various configurations such as a variable inductance capacitor 64 and a fixed capacitance capacitor 62 shown in FIG. 3E are used. When using only a fixed capacitor 62, You can also adjust the impedance by replacing capacitors with different capacitors.  It can be known from the experimental examples described below that the impedance of the path in which the plasma is uniform with respect to the substrate is reduced. Find the current 流 flowing through the path when the impedance 变更 of the impedance adjustment section 6 is changed, It ’s best to set it in such a way that it becomes the largest, that is, It is most ideal to set the impedance of the path in which the plasma is uniform with respect to the substrate.  however, In fact, it only needs to be within 2% of the maximum current, Set at least within 10% of the maximum current.  • Describe the effect of this embodiment. First of all, Open the gate valve 24 to carry the substrate 10 into the processing container 2 from the isolation chamber not shown in the figure and the transfer arm not shown in the figure. The substrate 10 is placed on the lower electrode 5 by the linkage between the lifting pins not shown in the figure penetrating the lower electrode 5. Secondly, Close the gate valve 24, The processing gas is supplied from the processing gas supply unit 33 to the processing container 2 through the upper electrode 3, and, The vacuum evacuation means 22 performs vacuum evacuation to maintain the inside of the processing container 2 at a specific pressure. Secondly, Applying a high-frequency power source 4 between the upper electrode 3 and the lower electrode 5 for example, 010 to 30141 ^, 101 ^ ~ of high frequency power, Will stimulate the processing of -16- 200540987 (13) gas to generate plasma. The processing gas system is, for example, a gas composed of a halogen gas such as a halogen compound, oxygen, And argon.  Because the plasma is generated, So high frequency current will flow through the upper electrode plasma-> Lower electrode 5- > Impedance adjustment section 6 —processing container 2 —matching box 42 —coaxial cable 44 outer layer section 43-> The so-called ground path with respect to the plasma of the substrate is a uniform direction, however, The impedance of this path is set so as to be approximately minimum, Therefore, it will be less than the upper electrode 3 — the plasma φ processing container 2 — the matching box 42 — the outer layer portion 43 of the coaxial cable 44 — the impedance of the path to ground 値, As a result, it is difficult to generate plasma between the upper electrode 3 and the wall portion of the processing container 2. result, The plasma is concentrated between the upper electrode 3 and the lower electrode 5, The plasma on the substrate 10 has high in-plane uniformity. An etching process is performed on the surface of the substrate 10 using the plasma, for example. Because the orientation of the plasma is more uniform, Therefore, the in-plane uniformity of the etching speed is also high. therefore, Uniform etching can be performed on the surface. In addition, It is also possible to suppress damage and consumption of the inner wall and inner parts of the processing container 2.  φ In addition, This embodiment is shown in FIG. 4, According to the type of processing, the appropriate adjustment of the impedance adjustment section 6 is stored in the memory section of the control section 7 in the form of a graph, After selecting the category of processing, Read the aforementioned appropriate adjustments to be processed from data such as graphs, The control section 7 outputs a control signal to a motor for driving an actuator of the impedance adjustment section 6 such as a variable capacitor adjustment mechanism. Specific examples are shown below, that is, When different etching processes are continuously performed, an example of the appropriate setting 値 is determined for each etching process. Alternatively, in the case where a continuous film formation process is performed, an example of the aforementioned appropriate setting step is determined for each film formation process.  -17- 200540987 (14) According to this embodiment, When high-frequency power is applied between the cathode and the anode to generate a plasma, and the substrate is processed by the plasma, An impedance adjustment section containing a capacitive component is arranged between the anode (the electrode opposite to the electrode connected to the high-frequency power source is the anode), and the processing container. So that from the cathode through the plasma, Anode And the impedance 壁 from the wall of the processing container to the grounded case of the integrated circuit is smaller than the impedance from the cathode through the plasma and the wall of the processing container to the grounded case of the integrated circuit Therefore, it is possible to suppress the generation of plasma between the cathode and the wall portion φ of the processing container. A plasma with high uniformity is generated, and a plasma treatment with high uniformity can be performed on the substrate.  (Modification of the first embodiment) A plasma processing apparatus according to a modification of this embodiment is shown in Figs. 5A and 5B. Equipped with, for example, three impedance adjusting sections 6A, 6B, 6C. A plurality of impedance adjusting sections 6. In the plasma processing apparatus of this modification, Impedance adjustment section 6A, 6B, One end of 6C should be connected to the isolated portions PA, φ longitudinal (width direction) of the lower electrode 5, respectively. PB, PC. Generally speaking, The square substrate 10 is divided into 3 regions by, for example, a dotted line in FIG. 5B. The impedance to the processing container 2 is set appropriately for each divided area. The proper system is the one that can obtain high uniformity plasma E.g,  Repeat trial and error in advance to find each impedance adjustment unit 6A for each process,  6B, Appropriate 6C.  For a more modeled example, For example, when the central plasma is strong, Increasing the capacitance 对应 corresponding to the impedance adjusting portion 6B in the central portion to increase the impedance 间 between the lower electrode 5 and the processing container 2 in the central portion, and, Reduced to -18- 200540987 (15) 6A, 6C capacitor 値, With this, Implementation of the adjustment to move the stronger part of the plasma from the center to the edge. that is, In this implementation form, Including impedance adjustment section 6A, 6B, The impedance of the 6C coupling circuit. As mentioned above, the impedance of the path in which the plasma is uniform with respect to the substrate is smaller than the impedance of the path through the upper electrode 3-the wall of the plasma processing container 2 The impedance adjustment section 6A of the path where the plasma density is high 6B, Each impedance of 6C is premised, Full φ satisfies this condition and adjusts each impedance 値, The plasma strength of the substrate 10 can be fine-tuned in the plane direction. therefore, It is a very effective technology that can produce high uniformity and high plasma when processing large substrates. The inventors found that  E.g, In the case of square substrates for flat plates, For example, when the size of the substrate is larger than 1 m2, It is difficult to make the plasma in a state of high uniformity in the plane, If you can fine-tune the plasma distribution, Can improve uniformity, And, Can also suppress local abnormal discharge. Secondly, Especially when the total of this high-frequency power is larger than 10kW, Very prone to abnormal discharge,  φ Therefore, the configuration with a plurality of impedance adjusting sections is an extremely effective method.  As shown in Figure 5A and Figure 5B, Equipped with impedance adjustment section 6A,  6B, At 6C, Should be in the corresponding position PA, PB, Protective tubes 52 A ~ 52C extending from below the support portion 51 are provided at the position of the PC, And, An independent support plate 53 is provided for each protection tube 52 A ~ 52C, In addition, A folding body 54 as shown in Fig. 1 should be arranged between each supporting plate 53 and the processing container 2.  Such a division of the impedance adjustment region of the lower electrode 5, Not limited to 3 splits, E.g, It can also be divided into 2 equal parts. And for the whole -19- 200540987 (16) 4 divisions, An impedance adjustment section is further provided for each divided region.  Secondly, This embodiment should also be as shown in Figure 6, Each impedance adjusting section 6A corresponding to the processing type, 6B, Each adjustment of 6C is stored in the memory section in the control section 7, And set each impedance adjustment section 6A according to the selected process, 6B, 6C impedance 値.  In addition, The impedance adjustment section 6 may not use a capacitor such as a variable capacitor or a fixed capacitor, In addition, as shown in Fig. 7A to Fig. 7C, a dielectric plate or the like for forming a capacitor component is used. The structure of the example in Figure 7A, A freely replaceable impedance adjusting section composed of a dielectric plate 8 is arranged between the lower electrode 5 and the bottom of the processing container 2. The capacitance 値 of the dielectric plate 8 is set on the condition that the impedance 路径 of the path is satisfied as described above.  The example shown in FIG. 7B corresponds to the use of a plurality of impedance adjusting sections 6A, 6B, Example of Figure 5A of 6C, In its composition, Central section (e.g., The capacitance of the dielectric is different in the area that is square when viewed in plan) and the area that is square in frame when viewed in plan. that is, 8A, 2 types of dielectric plates 8B. In this example, the thickness of the dielectric plate is the same, and the capacitance is changed by changing the material. however, As shown in Figure 7C, Change the thickness of the lower electrode 5, E.g, Increase the thickness of the central part, While reducing the thickness of the dielectric plate 8 in this area, With this, Capacitance can be changed at the center and edges.  In the above embodiment, The high-frequency power supply 4 is connected to the upper electrode 3 side, however, In its composition, The high-frequency power supply 4 may be connected to the lower electrode 5 side. at this time, The impedance adjustment section 6 is connected between the upper electrode 3 and, for example, the upper and upper sections of the processing container -20-200540987 (17) 2. at this time, The impedance adjustment section 6 may be disposed between the upper electrode 3 and the side wall portion of the processing container 2. however, It is preferably arranged at a position lower than the upper electrode 3. Fig. 8 is an example in which three impedance adjusting sections 6 A to 6C are provided in this type of device. The arrangement positions of the three impedance adjustment sections 6 A to 6C correspond to the positions of PA to PC shown in Figs. 5A and 5B, for example. however, The number of the impedance adjusting sections 6 may be two or more. As shown above, The impedance adjustment unit 6 may be a complex φ or one.  According to this modification, When a plurality of impedance adjustment sections are used, and one end of each impedance adjustment section is connected to a portion of the anode that is isolated from each other in the longitudinal direction, Because the anode is divided into a plurality of directions in the plane direction of the substrate and the impedance is adjusted for each divided area, Therefore, compared with adjusting impedance at one location, You can implement more fine adjustment of the plasma distribution, therefore, A plasma with high uniformity can be obtained. E.g, When the substrate is a large substrate with an area of 1 m2 or more, It is difficult to make the plasma in a state of high uniformity in the plane, If the φ distribution of the plasma can be fine-tuned, Can improve uniformity, and, Can also suppress local abnormal discharge. Secondly, Especially when the total of this high-frequency power is larger than 10kW, Very prone to abnormal discharge, Therefore, the configuration with a plurality of impedance adjusting sections is an extremely effective method.  (Second Embodiment) As shown in FIG. 9, this embodiment is a type of plasma with a high frequency power supply 4 on the upper electrode 3 side and a high frequency power supply 100 on the lower electrode 5 side. The processing device will be described. The plasma processing device • 21-200540987 (18) and the matching cable is connected to the source case with a case 4 1 5 Dirty frequency local reactance 4 2 is attached to the lower side protection tube 5 2 as shown in Figure A Implement wiring of conductive 〇1 in B, A matching box 1 〇 2 ′ is disposed below the lower end of the protection tube 5 2 B. The matching box 102 is provided with a whole circuit 103 connected to the aforementioned conducting circuit 101. In addition, The integrated circuit 103 is connected to a high-frequency power source 100.  The lower part of the distribution box 1 〇 2 extends the conducting circuit 1 〇 6, And the outer layer 105 for forming the coaxial cable 104, The outer layer portion 105 is used for grounding.  In this example, The integrated circuit 41 and the integrated circuit 103 are opposed to the φ first integrated circuit and the second integrated circuit, respectively. The high-frequency power source 4 and the high-frequency power source 100 correspond to the first high-frequency power source and the second high-frequency power source, respectively. The upper high-frequency power source 4 outputs, for example, a high-frequency power of 10 kW to 10 MHz to 30 MHz. The second high-frequency power source 100 on the lower side outputs high-frequency power of, for example, 2 kW and 6 MHz at 3 kW. The function of the high-frequency electric power from the first high-frequency power source 4 to activate the processing gas, The electric power from the second high-frequency power source 100 has a function of bringing the ions in the plasma closer to the substrate 10 side. In addition, In real time, The matching boxes 42 and 102 are equivalent to the grounding φ body of the first integrated circuit and the grounding case of the second integrated circuit, respectively. There is a high-pass filter not shown in Figure 9 between the upper electrode 3 and the integrated circuit. In addition, There is a low-pass filter between the lower electrode and the integrated circuit 103. Two high-frequency power supplies 4, High Power source between 1 00 is the state where the other party's high-frequency components cannot be input. At this time, when viewing from the first high-frequency power source 4, The lower electrode 5 is an anode, When viewed from the 2nd frequency power supply 100, The upper electrode 3 is an anode.  Secondly, A plurality of resistance adjusting sections 9A and 9C are arranged between the upper electrode 3 and the matching box 42. The impedance adjusting sections 9A and 9C are connected to, for example, an upper part of the ceiling of the processing container 2 through a matching box. For the convenience of illustration -22- 200540987 (19) The impedance adjustment section on the upper side and the impedance adjustment section on the lower side are marked with only two 9A,  9C (6A, 6C), however, Each can be equipped with more than three or only one.  In addition, The matching box 42 of this example is equivalent to the grounding case of the first integrated circuit 41 for the purpose of returning the high-frequency current from the first high-frequency power source 4 from the upper part of the processing container 2 to the high-frequency power source 4. The matching box 102 corresponds to a grounded casing of the second integrated circuit 103 for the purpose of returning a high-frequency current from the second high-frequency power source 100 to the high-frequency power source 100 from the lower portion of the processing container 2.  6A, impedance adjustment section on the lower side, 6C corresponds to the first impedance adjustment unit,  A filter is provided so that only high-frequency bands corresponding to the high-frequency band of the first high-frequency power source 4 can pass. In addition, Upper impedance adjustment section 9A, 9C corresponds to the second impedance adjustment section, It is equipped with a filter that can pass only the high-frequency band corresponding to the high-frequency band of the second high-frequency power source 100. that is, The high-frequency current from the first high-frequency power source 4 passes through the high-frequency power source 4-integrated circuit 41 4 upper electrode 3-> Plasma 4 lower electrode impedance adjustment section 6A, 6C —Processing container 2- > Matching Box 42—Outer Layer 43 of Coaxial Cable 44- > The ground path flows through φ, The high-frequency current from the second high-frequency power source 100 is integrated into the circuit 103-> via the high-frequency power source 1004. Lower electrode 5-Plasma upper electrode 3-Impedance adjustment section 9A, 9C —Processing container 2 —Matching box 102- > Coaxial cable 104 Outer layer part 105-A path through which ground passes.  First impedance adjustment section 6A, 6C is based on the above-mentioned Lower electrode 5, And the impedance of the high frequency of the first high-frequency power source 4 of the path from the wall of the processing container 2 to the matching box 42 (the grounding case of the first integrated circuit) is uniform with respect to the substrate plasma. The upper electrode 3 passes through the plasma and the wall portion of the processing container 2 to the matching box-23- 200540987 (20) 42. The high-frequency impedance of the first high-frequency power source 4 in the path with a higher plasma density relative to the wall portion値 to adjust the impedance 方式. When reducing the above-mentioned impedance 路径 of the path relative to the substrate plasma is uniform, Calculate the current 路径 from the first high-frequency power source 4 through a path that is uniform with respect to the plasma of the substrate, It ’s best to set it in such a way that it is the largest, that is, It is most ideal to set the impedance in such a way that the plasma is uniform with respect to the substrate. however, Actually φ only needs to be within 2% of the maximum current, Set at least within 10% of the maximum current. The current of the path in a uniform direction with respect to the plasma of the substrate is, for example, connected to the impedance adjusting section 6A, The 6C current meter calculates the total of the currents. Second impedance adjustment section 9A, 9C is used to pass the lower electrode 5 through the plasma, Upper electrode 3, And the impedance of the high frequency of the second high-frequency power source 100 of the path from the wall of the processing container 2 to the matching box 102 in a uniform direction with respect to the substrate plasma is smaller than that from the lower electrode 5 through the plasma and processing The impedance 値 of the high-frequency impedance 第 of the second high-frequency power source 100 of the path with a higher plasma density relative to the wall from the wall portion of the container 2 to the matching box 102 is adjusted. When reducing the above-mentioned impedance 値 of the path in which the plasma is uniform with respect to the substrate, Find the current 値 from the second high-frequency power source 100 through a path that is uniform with respect to the plasma of the substrate, It ’s best to set it in such a way that it is the largest, however, In fact, it only needs to be within 2% of the maximum current, Set at least within 10% of the maximum current.  -24-200540987 (21) (Third embodiment) In this embodiment, the first high-frequency power supply 4 and the second high-frequency power supply 1 are disposed on the lower electrode 5 side as shown in FIG. A frequency type plasma processing apparatus will be described. The plasma processing apparatus is connected to a protection tube 45 via a lower insulating layer 50 on the lower electrode 5, The lower end side of the protection tube 45 penetrates the bottom surface of the processing container 2, The matching tube 42 is connected to the lower end of the protection tube 45. The matching box 42 is provided with two integrated circuits 41, 103,  φ One end of the integrated circuit 4 1 and 103 is connected to the lower electrode 5 through the conductive circuits 46 and 1 0 1 arranged in the protection tube 45, respectively. and, The other ends of the integrated circuits 41 and 103 are connected to the first high-frequency power supply 4 and the second high-frequency power supply 100, respectively. 44 and 104 are coaxial cables as described above. The frequency and power of the high-frequency power from the first high-frequency power source 4 and the second high-frequency power source 100 are the same as those of the embodiment shown in FIG.  The upper electrode 3 is connected to the plurality of first impedance adjusting sections 6A to 6C of the three impedance adjusting sections 6A to 6C of this example, And one end side of the plurality of second impedance adjustment sections of the three impedance adjustment sections 9A φ to 9C in this example, and, The other ends of the impedance adjustment sections 6A to 6C and 9A to 9C are connected to, for example, the upper portion of the ceiling of the processing container 2 via a conductive cover 56 covering the opening 30 of the processing container 2. The first impedance adjustment section and the second impedance adjustment section may be provided with one, 2, Or 4 or more. The first impedance adjustment sections 6A to 6C of this example may be provided with a filter that allows only high frequencies that pass through the high-frequency band corresponding to the first high-frequency power supply 4 to pass. In addition, The second impedance adjustment sections 9A to 9C may be provided with a filter that allows only high frequencies that pass through the high-frequency band of the second high-frequency power source 100 to pass.  -25- 200540987 (22) In addition, The matching box 42 of this example also serves as the grounding case of the first integrated circuit for the purpose of returning the high-frequency current from the first high-frequency power source 4 from the lower part of the processing container 2 to the high-frequency power source 4. It is also used as the grounding case of the second integrated circuit for the purpose of returning the high-frequency current from the second high-frequency power source 100 to the high-frequency power source i 00 from the lower portion of the processing container 2.  High-frequency current from the first high-frequency power source flows through the high-frequency power source 4-> Integrated circuit 4 1 —Lower electrode 5 —Plasma upper electrode 3-> 1st impedance adjustment section φ 6A ~ 6C- > The processing container 24 matches the path of the box 42, The high-frequency current from the second high-frequency power source 100 passes through the high-frequency power source 100. The integrated circuit 1 0. The lower electrode plasma. The upper electrode second impedance adjusting section 9A to 9C. The processing container matching box 42. Its path.  The first impedance adjusting sections 6A to 6C are configured to pass the lower electrode 5 through the plasma, Upper electrode 3, And the impedance of the high frequency of the first high-frequency power source 4 of the path from the wall of the processing container 2 to the matching box 42 in a uniform direction with respect to the substrate plasma is smaller than that from the lower electrode 5 through the plasma and the processing container 2 The impedance 値 of the high-frequency impedance 値 of the first high-frequency power source 4 in the path where the plasma density of the wall portion to the matching box 42 is relatively high relative to the wall portion 42 is adjusted. When reducing the impedance of the above-mentioned path in which the plasma is uniform with respect to the substrate, Find the current 値 from the first high-frequency power source 4 through a path in which the plasma is uniform with respect to the substrate, It ’s best to set it in such a way that it is the largest, that is, It is most ideal to set the impedance so that the impedance of the path in the uniform direction with respect to the plasma of the substrate is minimized. however, In fact, it only needs to be within 2% of the maximum current, Set at least within 10% of the maximum current.  -26- 200540987 (23) In addition, The second impedance adjustment sections 9 A to 9C are configured to pass the lower electrode 5 through the plasma, Upper electrode 3, And the impedance of the high frequency of the second high-frequency power source 100 of the path from the wall of the processing container 2 to the matching box 42 in a uniform direction with respect to the substrate plasma is smaller than that from the lower electrode 5 through the plasma and processing The impedance 値 of the high-frequency impedance 第 of the second high-frequency power source 100 in the path from the wall portion of the container 2 to the matching box 42 with a higher plasma density relative to the wall portion is adjusted. When reducing the above-mentioned impedance φ of the path φ which is uniform with respect to the substrate plasma, Obtain the current 来自 from the second high-frequency power source 100 through a path in which the plasma relative to the substrate is uniform, It ’s best to set it in such a way that it is the largest, that is, It is most ideal to set the impedance in such a way that the plasma is uniform in the direction relative to the substrate. however, In fact, only 2% of the maximum current is required. Set at least within 10% of the maximum current.  In addition, The impedance adjusting section of the embodiment shown in Figs. 8 to 10 can also be configured by using the dielectric material containing the capacitance component φ in Figs. 7A to 7C as described above. In addition, It is also possible to create data corresponding to the types of plasma processing and the adjustments of the impedance adjustment section shown in Figure 4, When selecting a plasma type, That is, the impedance adjustment section is automatically adjusted.  Figure 11 shows a configuration example when a complex impedance adjustment section is provided. In this example, impedance adjustment sections are provided at 5 points (on the projection area of the 5 points) at 4 points P1 to P4 corresponding to the 4 corners (corner portions) of the square substrate 10 and the center portion P 5.

針對以上之上部電極3及下部電極5間之距離（電極 間間隙）及處理壓力之適當値方面，如第1圖、第5圖A -27- 200540987 (24) 、及第9圖之高頻電源4連結於上部電極3側之類型之裝 置時，電極之間隙應爲50mm至3 00mm，處理壓力應爲 13Pa 〜27Pa(100mTorr 至 200mTorr)° 此夕f，如第 8 圖及 第1 〇圖之高頻電源4連結於下部電極5側之類型之裝置 時，電極之間隙應爲 200mm至 700mm，處理壓力應爲 0.7 P a 〜1 3 P a ( 5 m T 〇 r r 至 lOOmTorr) 〇 φ [實施例] 接著，針對以確認本發明之各實施形態之效果爲目的 之實驗例進行說明。 (實驗1) A ·實驗方法 試驗裝置係第5圖A所示之平行平板型電漿處理裝置 ，係使用對下部電極之阻抗調整區域進行4分割（第5圖 • A中爲3分割）之裝置，阻抗調整部6係倂聯著4個（6A〜 6D)由第12圖所示之電容器63及可變電容器61串聯而成 之物。此外，第1 2圖C0所表示之電容成分相當於下部電 極及處理容器間之電介質之電容。 其次，改變可變電容器之調正器位置來將阻抗調整部 之阻抗設定成各種値，針對各設定値以目視觀察處理容器 所產生之電漿之狀態，而且’檢測流過阻抗調整部及處理 容器間之導電路之電流（流過下部電極之電流）並檢測上部 電極之電壓。電漿之產生條件方面，上部電極及下部電極 -28- 200540987 (25) 之間係設定成60 mm，電漿產生用氣體係使用SF6氣體、 HC1氣體、及He氣體之混合氣體，高頻電源之頻率及電 力分別設定成 1 3 . 5 6 Μ Η z 及 7 · 5 k w，壓力則設定成 20Pa(l 50mTorr卜 B ·實驗結果 第13圖係：含有可變電容器之調正器位置、該電容 φ 器之電容、該電容器之阻抗、阻抗調整部之阻抗値Z(L-C) 、以及下部電極及處理容器間之C0在內之合計之阻抗値 ;流過下部電極之電流（下部電流）之値；上部電極之電壓（ 上部電壓）之値；以及電漿之目視狀態；之關係說明圖。 依據電漿之目視狀態，實施發光狀態之均一性極高者爲（ ◎)、發光狀態之均一性大致良好者爲（〇）、發光狀態之均 一性稍差者爲（△)、以及發光狀態之均一性差者爲（X )之4 種評估。此外，第14圖及第1 5圖係將第13圖所示之下 φ 部電流之値及上部電壓之値圖表化。此外’第1 3圖電容 値之單位爲pF，電容器之阻抗及阻抗値之單位爲Ω，電流 値及電壓値之單位分別爲A及V。 由結果可知，下部電流之最大値爲79A ’此時之電漿 狀態亦爲最佳。下部電流爲78A時，電漿之狀態大致良好 ，而下部電流爲7 2 A，則電漿之狀態稍差。此外，6 6 A以 下時，電漿之狀態極差。因此，應以下部電流爲大致最大 値之方式來調整阻抗値。本實例時’若考慮檢測誤差等’ 則下部電流應爲最大値之1 0 %以內’若能爲2 %以內則更 -29- 200540987 (26) 佳。此處’下部電流値爲大致最大係指上部電壓値爲大致 最大，亦即’下部電極及處理容器間之阻抗値爲大致最小 。換g之’下部電流値爲大致最大係代表從上部電極經由 電漿流至處理容器之壁部之電流爲大致最小，可抑制上部 電極及處理容器之壁部間之放電，而提高電漿之均一性。 (實驗2) φ A ·實驗方法 S式驗裝置係使用第9圖所示之上下配設著高頻電源4 及高頻電源100之2頻率類型之平行平板型電漿處理裝置 ，對形成於200〇mm X 2 2〇〇mm之方形基板表面之矽膜實施 蝕刻。處理條件如下所示。 處理氣體：SF6氣體、HC1氣體、及He氣體 上部側之高頻電源之頻率及電力：13·56ΜΗζ及20kW 下部側之高頻電源之頻率：3.2MHz及4kW φ 處理壓力：20Pa(l 50mTorr) 此外’在對應於方形基板之4角及中心部之位置，配 設合計各爲5處之針對來自上部側之高頻電源4之高頻之 阻抗調整部、及針對來自下部側之高頻電源1 00之高頻之 阻抗調整部。各阻抗調整部係使用第3圖D所示之串聯著 可變電容器及電容器之物。其次，利用串聯插入各阻抗調 整部之電流計，在流過下部電極側之電流値（前述電流計 之電流値之合計値）爲最小之調整點，針對設定於基板表 面之面內之複數位置之蝕刻速度之平均値、及蝕刻速度之 -30- 200540987 (27) 面內均一性進行調查。此外，在與上述處理條件相同之條 件下，分別針對未配設阻抗調整部時、對下部電極側施加 之電力爲零時、以及未配設下部側之高頻電源時，同樣實 施蝕刻速度之平均値及蝕刻速度之面向均一性之調查。 B ·實驗結果 結果如第1 6圖所示。由結果可知，與只對上部電極 φ 連結高頻電源時相比，下部電極亦連結高頻電源可提高蝕 刻率。然而，上下2頻率時，蝕刻率之面內均一性會變差 ，故利用阻抗調整部以使流過下部電極側之電流値成爲最 小之方式來調整阻抗，可提高鈾刻率之面向均一性。 以上說明之各實施形態，電漿處理裝置之各部動作係 互相關連，若考慮互相關連之情形，則可以置換一連串之 動作。其次，上述置換亦可以爲電漿處理方法之發明之實 施形態。 • 以上，係參照圖面針對本發明之良好實施形態進行說 明，本發明並未受限於上述實例。相關業者當可在專利申 請範圍之範疇內連想到各種變更例及修正例，而其當然亦 屬於本發明之技術範圍。 【圖式簡單說明】 第1圖係本發明第1實施形態之電漿處理裝置之整體 構成之槪略縱剖面圖。 第2圖係上述實施形態之等效電路之電路圖。 -31 - 200540987 (28) 第3圖A係上述實施形態所使用之阻抗調整部之一實 例之構成圖。 第3圖B係上述實施形態所使用之阻抗調整部之其他 實例之構成圖。 第3圖C係上述實施形態所使用之阻抗調整部之其他 實例之構成圖。 第3圖D係上述實施形態所使用之阻抗調整部之其他 φ 實例之構成圖。 第3圖E係上述實施形態所使用之阻抗調整部之其他 實例之構成圖。 第4圖係上述實施形態之一實例之構成圖。 第5圖A係上述實施形態之變形例之電漿處理裝置之 整體構成之槪略縱剖面圖。 第5圖B係上述實施形態之基板之分割狀態圖。 第6圖係第5圖A之實施形態之等效電路之電路圖。 φ 第7圖A係上述實施形態之變形例之電漿處理裝置之 整體構成之槪略縱剖面圖。 第7圖B係上述實施形態之變形例之電漿處理裝置之 整體構成之槪略縱剖面圖。 第7圖c係上述實施形態之變形例之電漿處理裝置之 整體構成之槪略縱剖面圖。 第8圖係上述實施形態之變形例之電槳處理裝置之整 體構成之槪略縱剖面圖。 第9圖係本發明第2實施形態之電漿處理裝置之整體 -32- 200540987 (29) 構成之槪略縱剖面圖。 第1 0圖係本發明第3實施形態之電漿處理裝置之整 體構成β槪略縱剖面圖。 第11圖係使阻抗調整部之設置位置對應於基板上之 位置（點）之說明圖。 第1 2圖係以確認本發明各實施形態之效果爲目的之 一實驗所使用之阻抗調整部之電路之電路圖。 φ 第1 3圖係上述一實驗結果之整體資料之說明圖。 第1 4圖係上述一實驗結果之阻抗調整部之調整位置 及高頻電流之關係之說明圖。 第1 5圖係上述一實驗結果之阻抗調整部之調整位置 及高頻電壓之關係之說明圖。 第1 6圖係其他實驗結果之基板上之矽鈾刻率及蝕刻 率之面向均一性之特性圖。 第1 7圖係傳統電漿處理裝置之整體構成之槪略縱剖 φ 面圖。 第1 8圖係傳統例之等效電路之電路圖。 【主要元件符號說明】 10 基板 2 處理容器 3 上部電極 3 1 絕緣材 32 氣體供應路徑 -33- 200540987For the appropriate distance between the upper electrode 3 and the lower electrode 5 (inter-electrode gap) and the processing pressure, as shown in Figure 1, Figure 5 A -27- 200540987 (24), and the high frequency of Figure 9 When the power supply 4 is connected to the device on the upper electrode 3 side, the gap between the electrodes should be 50mm to 300mm, and the processing pressure should be 13Pa ~ 27Pa (100mTorr to 200mTorr) ° f, as shown in Figure 8 and Figure 10 When the high-frequency power supply 4 is connected to the device of the lower electrode 5 side, the gap between the electrodes should be 200 mm to 700 mm, and the processing pressure should be 0.7 P a to 1 3 P a (5 m T 〇rr to 100 mTorr) 〇φ [ EXAMPLES Next, experimental examples for the purpose of confirming the effects of the embodiments of the present invention will be described. (Experiment 1) A · Experimental method The test device is a parallel plate type plasma processing device shown in Fig. 5A, which uses 4 divisions of the impedance adjustment area of the lower electrode (3 divisions in Fig. 5 • A). The device and the impedance adjustment section 6 are connected in series by four (6A to 6D) capacitors 63 and variable capacitors 61 shown in FIG. 12. In addition, the capacitance component shown in Fig. 12C0 corresponds to the capacitance of the dielectric between the lower electrode and the processing container. Next, change the position of the regulator of the variable capacitor to set the impedance of the impedance adjustment section to various levels, and observe the state of the plasma generated by the processing container visually for each setting, and 'detect the flow through the impedance adjustment section and process The current of the conducting circuit between the containers (the current flowing through the lower electrode) and the voltage of the upper electrode is detected. In terms of plasma generation conditions, the upper electrode and lower electrode -28- 200540987 (25) are set to 60 mm. The plasma generation gas system uses a mixture of SF6 gas, HC1 gas, and He gas, and a high-frequency power supply. The frequency and electric power are set to 1 3. 5 6 Μ Η z and 7 · 5 kw respectively, and the pressure is set to 20 Pa (50 mTorr. B · Experimental results. Figure 13: The position of the regulator containing the variable capacitor, the Capacitance φ The capacitance of the capacitor, the impedance of the capacitor, the impedance of the impedance adjustment section (Z (LC), and the total impedance of C0 between the lower electrode and the processing container); the current flowing through the lower electrode (lower current).値; the voltage of the upper electrode (upper voltage); and the visual state of the plasma; the relationship diagram. According to the visual state of the plasma, the highest uniformity of the light emitting state is (◎), the uniformity of the light emitting state There are four types of evaluations: (0) for approximately good performance, (△) for slightly poor uniformity of light emission state, and (X) for poor uniformity of light emission state. In addition, Figures 14 and 15 Figure 13 below The current 値 and the upper voltage 値 are graphed. In addition, the unit of the capacitor 第 in Fig. 13 is pF, the unit of the impedance and impedance Ω of the capacitor is Ω, and the unit of the current 値 and voltage 为 are A and V, respectively. From the result It can be seen that the maximum current of the lower part is 79A. At this time, the state of the plasma is also optimal. When the lower part is 78A, the state of the plasma is generally good, while the lower part is 7 2 A, the state of the plasma is slightly worse. In addition, the state of the plasma is extremely poor when it is below 6 6 A. Therefore, the impedance 値 should be adjusted in such a way that the current at the lower part is approximately the maximum 値. In this example, 'if the detection error is taken into account', the lower current should be the maximum 値Within 10% ', if it can be within 2%, it is even better -29-200540987 (26). Here' the lower current 最大 is approximately the maximum means the upper voltage 最大 is approximately the maximum, that is, between the lower electrode and the processing container The impedance 値 is approximately the smallest. For g, the lower current 値 is approximately the maximum, which means that the current flowing from the upper electrode to the wall portion of the processing container through the plasma is approximately the smallest, which can suppress the discharge between the upper electrode and the wall portion of the processing container. While mentioning Uniformity of high plasma. (Experiment 2) φ A · Experimental method S-type inspection device uses a parallel flat-type battery equipped with high-frequency power supply 4 and high-frequency power supply 2 and 2 as shown in Figure 9. The slurry processing device etches a silicon film formed on the surface of a 200 mm x 2 200 mm square substrate. The processing conditions are as follows. Processing gas: SF6 gas, HC1 gas, and high-frequency power supply on the upper side of He gas Frequency and power: 13.56MHz and 20kW Frequency of high-frequency power supply on the lower side: 3.2MHz and 4kW φ Processing pressure: 20Pa (l 50mTorr) In addition, it is arranged at positions corresponding to the four corners and the center of the square substrate In total, there are five impedance adjustment units for high frequencies from the high-frequency power source 4 on the upper side and impedance adjustment units for high frequencies of the high-frequency power source 100 from the lower side. Each impedance adjusting unit uses a variable capacitor and a capacitor connected in series as shown in FIG. 3D. Next, using a current meter inserted in series with each impedance adjustment section, the minimum adjustment point of the current 値 (the total of the current 値 of the current meter 値) flowing through the lower electrode side is directed to a plurality of positions set on the surface of the substrate surface. The average etch rate of the etching rate and the -30-200540987 (27) in-plane uniformity were investigated. In addition, under the same conditions as the above-mentioned processing conditions, the same applies to the etching rate when the impedance adjustment unit is not provided, when the power applied to the lower electrode side is zero, and when the high-frequency power source is not provided on the lower side. Investigation of uniformity of average etch rate and etching rate. B. Experimental results The results are shown in Figure 16. From the results, it can be seen that the etch rate can be improved by connecting the lower electrode to a high-frequency power source as compared to when the high-frequency power source is connected to only the upper electrode φ. However, at two frequencies, the in-plane uniformity of the etching rate will deteriorate. Therefore, using the impedance adjustment unit to adjust the impedance so that the current flowing through the lower electrode side is minimized can improve the uniformity of the uranium etching rate. . In each of the embodiments described above, the operations of the plasma processing apparatuses are related to each other. If the situation of mutual correlation is considered, a series of actions can be replaced. Secondly, the above replacement may be an embodiment of the invention of the plasma processing method. • The above is a description of a good embodiment of the present invention with reference to the drawings. The present invention is not limited to the above examples. Relevant companies can think of various changes and amendments within the scope of the patent application scope, and of course they also belong to the technical scope of the present invention. [Brief description of the drawings] Fig. 1 is a schematic longitudinal sectional view of the overall configuration of a plasma processing apparatus according to a first embodiment of the present invention. Fig. 2 is a circuit diagram of an equivalent circuit of the above embodiment. -31-200540987 (28) Fig. 3A is a structural diagram of an example of an impedance adjusting unit used in the above embodiment. Fig. 3B is a configuration diagram of another example of the impedance adjusting section used in the above embodiment. Fig. 3C is a configuration diagram of another example of the impedance adjusting section used in the above embodiment. Fig. 3D is a structural diagram of another example of φ of the impedance adjusting unit used in the above embodiment. Fig. 3E is a configuration diagram of another example of the impedance adjusting unit used in the above embodiment. Fig. 4 is a structural diagram of an example of the above embodiment. Fig. 5A is a schematic longitudinal sectional view of the overall configuration of a plasma processing apparatus according to a modification of the above embodiment. FIG. 5B is a diagram showing the state of the substrate in the above embodiment. Fig. 6 is a circuit diagram of an equivalent circuit of the embodiment of Fig. 5A. Fig. 7A is a schematic longitudinal sectional view of the overall configuration of a plasma processing apparatus according to a modification of the above embodiment. Fig. 7B is a schematic longitudinal sectional view of the overall configuration of a plasma processing apparatus according to a modification of the above embodiment. Fig. 7c is a schematic longitudinal sectional view of the overall configuration of a plasma processing apparatus according to a modification of the above embodiment. Fig. 8 is a schematic longitudinal sectional view of the overall configuration of an electric paddle processing apparatus according to a modification of the above embodiment. Fig. 9 is a schematic longitudinal cross-sectional view of the overall configuration of a plasma processing apparatus according to the second embodiment of the present invention -32- 200540987 (29). Fig. 10 is a schematic longitudinal sectional view of the overall configuration β 构成 of a plasma processing apparatus according to a third embodiment of the present invention. Fig. 11 is an explanatory diagram in which the installation position of the impedance adjustment section corresponds to a position (point) on the substrate. Fig. 12 is a circuit diagram of a circuit of an impedance adjusting unit used in an experiment for the purpose of confirming the effects of the embodiments of the present invention. φ Figure 13 is an explanatory diagram of the overall data of the above experimental results. Fig. 14 is an explanatory diagram of the relationship between the adjustment position of the impedance adjusting section and the high-frequency current in the result of the above-mentioned experiment. Fig. 15 is an explanatory diagram of the relationship between the adjustment position of the impedance adjustment section and the high-frequency voltage in the result of the above-mentioned experiment. Figure 16 is a graph showing the uniformity of silicon uranium etch rate and etch rate on the substrate from other experimental results. Fig. 17 is a schematic longitudinal sectional view of the overall structure of a conventional plasma processing apparatus. Fig. 18 is a circuit diagram of an equivalent circuit of the conventional example. [Description of main component symbols] 10 Substrate 2 Processing container 3 Upper electrode 3 1 Insulating material 32 Gas supply path -33- 200540987

(30) 4 高頻電源 42 匹配箱 44 同軸電纜 5 下部電極 5 1 導電路 53 支持板 6、6 A 〜6 C 阻抗調整部 7 控制部 8、8A、8B 電介質板 9A、9B 阻抗調整部 100 高頻電源 102 匹配箱 104 同軸電纜(30) 4 High-frequency power supply 42 Matching box 44 Coaxial cable 5 Lower electrode 5 1 Conductor circuit 53 Support board 6, 6 A to 6 C Impedance adjustment section 7 Control section 8, 8A, 8B Dielectric plate 9A, 9B Impedance adjustment section 100 HF power supply 102 matching box 104 coaxial cable

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Claims (1)

200540987 (1) 十、申請專利範圍 1 · 一種電漿處理裝置，其目的係在處理容器內利用高 頻電力貫施處理氣體之電漿化，利用該電漿對基板進行處 理，其特徵爲具有： 位於該處理容器內而與該處理容器爲絕緣且爲上下相 對配設之陰極及陽極； 其一端側經由整合電路連結於前述陰極之高頻電源； Φ 以及 其一端側連結於前述陽極且另一端側連結於前述處理 容器之含有電容成分之阻抗調整部；且 基板載置於前述陰極及前述陽極當中之位於下方側之 電極上， 阻抗調整部以使從前述陰極經由電漿、前述陽極、及 前述處理容器之壁部至前述整合電路之接地殻體爲止之阻 抗値小於從前述陰極經由電漿及前述處理容器之壁部至前 # 述整合電路之接地殻體爲止之阻抗値之方式調整該阻抗値 〇 2 ·如申請專利範圍第1項之電漿處理裝置，其中 前述阻抗調整部以使從前述陰極經由電漿、前述陽極 、及前述處理容器之壁部至前述整合電路之接地殻體爲止 之阻抗値爲最小之方式調整該阻抗値。 3 ·如申請專利範圍第1項之電漿處理裝置，其中 前述阻抗調整部在調整阻抗値而改變流入前述陽極之 電流値時，以可得到該最大値之1 〇%以內之値之方式來設 -35- 200540987 (2) 定阻抗値。 4 .如申請專利範圍第1項之電漿處理裝置，其中 前述阻抗調整部係以可改變阻抗値之方式所構成。 5 .如申請專利範圍第1項之電漿處理裝置’其中 前述電漿處理裝置更具有控制部’用以儲存以使電漿 處理之類別及前述阻抗調整部之調整値互相對應爲目的之 資料，讀取對應於選取之電漿處理之類別之阻抗調整値並 φ 輸出以調整前述阻抗調整部爲目的之控制信號。 6. 如申請專利範圍第1項之電漿處理裝置，其中 前述阻抗調整部係配設於前述陽極及前述處理容器間 之含有電容成分之電介質。 7. 如申請專利範圍第1項之電漿處理裝置，其中 使用複數個前述阻抗調整部，各阻抗調整部之一端側 連結於前述陽極之縱向上相互隔離之部位。 8 · —種電漿處理裝置，其目的係在處理容器內利用高 # 頻電力實施處理氣體之電漿化，利用該電漿對基板進行處 理，其特徵爲具有： 位於該處理容器內而與該處理容器爲絕緣且爲上下相 對配設之上部電極及下部電極； 其一端側經由第1整合電路連結於前述上部電極之 10MHz〜30MHz之第1高頻電源； 其一端側經由第2整合電路連結於前述下部電極之 2MHz〜6MHZ之第2高頻電源； 其一端側連結於前述下部電極且另一端側連結於前述 - 36- 200540987 (3) 處理容器之含有電容成分之第1阻抗調整部；以及 其一端側連結於前述上部電極且另一端側連結於前 處理容器之含有電容成分之第2阻抗調整部·，且 基板載置於前述下部電極上， 第1阻抗調整部以使從前述上部電極經由電漿、前 下部電極、及前述處理容器之壁部至前述第1整合電路 接地威體爲止之則述第1局頻電源之頻率之阻抗値小於 φ 前述上部電極經由電漿及前述處理容器之壁部至前述第 整合電路之接地殻體爲止之前述第1高頻電源之頻率之 抗値之方式調整該阻抗値， 第2阻抗調整部以使從前述下部電極經由電漿、前 上部電極、及前述處理容器之壁部至前述第2整合電路 接地殼體爲止之前述第2高頻電源之頻率之阻抗値小於 前述下部電極經由電漿及前述處理容器之壁部至前述第 整合電路之接地殼體爲止之前述第2高頻電源之頻率之 # 抗値之方式調整該阻抗値。 9.如申請專利範圍第8項之電漿處理裝置，其中 前述第1阻抗調整部以從前述上部電極經由電漿、 述下部電極、及前述處理容器之壁部至前述第1整合電 之接地殼體爲止之前述第1高頻電源之頻率之阻抗値爲 小之方式調整該阻抗値， 前述第2阻抗調整部以從前述下部電極經由電漿、 述上部電極、及前述處理容器之壁部至前述第2整合電 之接地殻體爲止之前述第2高頻電源之頻率之阻抗値爲 述 述 之 從 1 阻 述 之 從 2 阻 刖 路 最 j 乂· 刖 路 最 37- 200540987 (4) 小之方式調整該阻抗値。 1 0 .如申請專利範圍第8項之電漿處理裝置，其中 前述第1阻抗調整部利用調整阻抗値來改變流入前述 下部電極流之第1高頻電源之高頻之電流値之方式，設定 可得到該電流値之最大値之1 〇%以內之値之阻抗値， 前述第2阻抗調整部利用調整阻抗値來改變流入前述 上部電極之第2高頻電源之高頻之電流値之方式，設定可 φ 得到該電流値之最大値之1 〇%以內之値之阻抗値。 1 1 .如申請專利範圍第8項之電漿處理裝置，其中 前述第1阻抗調整部及前述第2阻抗調整部係分別由 可改變前述第1高頻電源之頻率之阻抗値及前述第2高頻 電源之頻率之阻抗値之方式所構成。 12.如申請專利範圍第8項之電漿處理裝置，其中 前述電漿處理裝置更具有控制部，用以儲存以使電漿 處理之類別及前述第1阻抗調整部與前述第2阻抗調整部 # 之調整値互相對應爲目的之資料，讀取對應於選取之電漿 處理之類別之阻抗調整値並輸出以調整前述第1阻抗調整 部及前述第2阻抗調整部爲目的之控制信號。 13·如申請專利範圍第8項之電漿處理裝置，其中 前述第1阻抗調整部係配設於前述下部電極及前述處 理容器間之含有電容成分之電介質，前述第2阻抗調整部 係配設於前述上部電極及前述處理容器間之含有電容成分 之電介質。 14.如申請專利範圍第8項之電漿處理裝置，其中 •38- 200540987 (5) 使用複數個前述第1阻抗調整部，各阻抗調整部之一 端側連結於前述下部電極之縱向上相互隔離之部位， 使用複數個前述第2阻抗調整部，各阻抗調整部之一 端側連結於前述上部電極之縱向上相互隔離之部位。 1 5 · —種電漿處理置，其目的係在處理容器內利用高 頻電力實施處理氣體之電漿化，利用該電漿對基板進行處 理，其特徵爲具有： φ 位於該處理容器內而與該處理容器爲絕緣且爲上下相 對配設之上部電極及下部電極； 其一端側經由第1整合電路連結於前述下部電極之 10MHz〜30MHz之第1高頻電源； 其一端側經由第2整合電路連結於前述下部電極之 2MHz〜6MHz之第2高頻電源；以及 其一端側連結於前述上部電極且另一端側連結於前述 處理容器之含有電容成分之第1阻抗調整部及第2阻抗調 φ 整部；且 基板載置於前述下部電極上， 前述第1阻抗調整部以使從前述下部電極經由電漿、 前述上部電極、及前述處理容器之壁部至前述第1整合電 路之接地殻體爲止之前述第1高頻電源之頻率之阻抗値小 於從前述下部電極經由電漿及前述處理容器之壁部至前述 第1整合電路之接地殼體爲止之前述第1高頻電源之頻率 之阻抗値之方式調整該阻抗値， 前述第2阻抗調整部以使從前述下部電極經由電漿、 -39- 200540987 (6) 前述上部電極、及前述處理容器之壁部至前述第2整合電 路之接地殼體爲止之前述第2高頻電源之頻率之阻抗値小 於從前述下部電極經由電漿及前述處理容器之壁部至前述 第2整合電路之接地殻體爲止之前述第2高頻電源之頻率 之阻抗値之方式調整該阻抗値。 1 6.如申請專利範圍第1 5項之電漿處理裝置，其中 前述第1阻抗調整部以從前述下部電極經由電漿、前 φ 述上部電極、及前述處理容器之壁部至前述第1整合電路 之接地殼體爲止之前述第1高頻電源之頻率之阻抗値爲最 小之方式調整該阻抗値， 前述第2阻抗調整部以從前述下部電極經由電漿、前 述上部電極、及前述處理容器之壁部至前述第2整合電路 之接地殼體爲止之前述第2高頻電源之頻率之阻抗値爲最 小之方式調整該阻抗値。 1 7 .如申請專利範圍第1 5項之電漿處理裝置，其中 Φ 前述第1阻抗調整部利用調整阻抗値來改變流入上部 電極流之第1高頻電源之高頻之電流値之方式，設定可得 到該電流値之最大値之1 〇%以內之値之阻抗値， 前述第2阻抗調整部利用調整阻抗値來改變流入上部 電極流之第2高頻電源之高頻之電流値之方式，設定可得 到該電流値之最大値之1 〇%以內之値之阻抗値。 1 8 ·如申請專利範圍第1 5項之電漿處理裝置，其中 前述第1阻抗調整部及前述第2阻抗調整部係分別由 可改變前述第1高頻電源之頻率之阻抗値及前述第2高頻 -40- 200540987 (7) 電源之頻率之阻抗値之方式所構成。 1 9.如申請專利範圍第1 5項之電漿處理裝置，其中 前述電漿處理裝置更具有控制部，用以儲存以使電漿 處理之類別及前述第1阻抗調整部與前述第2阻抗調整部 之調整値互相對應爲目的之資料，讀取對應於選取之電漿 處理之類別之阻抗調整値並輸出以調整前述第1阻抗調整 部及前述第2阻抗調整部爲目的之控制信號。 φ 2 0.如申請專利範圍第15項之電漿處理裝置，其中 前述第1阻抗調整部及前述第2阻抗調整部係分別配 設於前述上部電極及前述處理容器間之含有電容成分之電 介質。 2 1 ·如申請專利範圍第1 5項之電漿處理裝置，其中 使用複數個前述第1阻抗調整部，各阻抗調整部之一 端側連結於前述下部電極之縱向上相互隔離之部位， 使用複數個前述第2阻抗調整部，各阻抗調整部之一 φ 端側連結於前述下部電極之縱向上相互隔離之部位。 22. 如申請專利範圍第1項之電漿處理裝置，其中 前述基板之面積爲lm2以上。 23. 如申請專利範圍第8項之電漿處理裝置，其中 前述基板之面積爲lm2以上。 24. 如申請專利範圍第15項之電漿處理裝置。 前述基板之面積爲lm2以上。 25·如申請專利範圍第22項之電漿處理裝置，其中 使用之高頻電力之合計値爲10kW以上。 -41 - 200540987 (8) 2 6·如申請專利範圍第23項之電漿處理裝置，其中 使用之局頻電力之合計値爲10kW以上。 2 7 ·如申請專利範圍第2 4項之電漿處理裝置，其中 使用之尚頻電力之合計値爲10kW以上。 2 8 .如申請專利範圍第丨項之電漿處理裝置，其中 前述陰極及前述陽極分別構成上部電極及下部電極， 前述高頻電源之頻率爲10MHz至30MHz， φ 前述基板之面積爲lm2以上， 前述上部電極及前述下部電極之間隙爲50mm至 3 00mm之値，處理壓力爲i3Pa〜27Pa之値， 利用含有鹵素之處理氣體對前述基板實施蝕刻處理。 2 9.如申請專利範圍第1項之電漿處理裝置，其中 前述陰極及前述陽極分別構成下部電極及上部電極， 前述高頻電源之頻率爲10MHz至30MHz， 前述基板之面積爲lm2以上， φ 前述上部電極及前述下部電極之間隙爲200mm至 700mm之値，處理壓力爲〇.7Pa〜13Pa之値， 利用含有鹵素之處理氣體對前述基板實施蝕刻處理。 3 0 ·如申請專利範圍第8項之電漿處理裝置，其中 前述基板之面積爲lm2以上， 前述第1筒頻電源連結於前述上部電極側， 前述上部電極及前述下部電極之間隙爲 5 0 m m至 3 00mm之値，處理壓力爲i3Pa〜27Pa之値， 利用含有鹵素之處理氣體對前述基板實施蝕刻處理。 -42- 200540987 (9) 3 1 ·如申請專利範圍第1 5項之電漿處理裝置，其中 前述基板之面積爲lm2以上， 前述第1高頻電源連結於前述下部電極側， 前述上部電極及前述下部電極之間隙爲 200mnm至 700mm之値，處理壓力爲〇.7Pa〜13Pa之値， 利用含有鹵素之處理氣體基板對蝕刻處理。 3 2 · —種電漿處理方法，其目的係在處理容器內利用 φ 高頻電力實施處理氣體之電漿化，利用該電漿對基板進行 處理，其特徵爲： 配設著位於該處理容器內而與該處理容器爲絕緣且上 下相對之陰極及陽極， 前述陰極之一端側經由整合電路連結著高頻電源， 基板載置於前述陰極及陽極當中之位於下方側之電極 上， 配設著其一端側連結於前述陽極且另一端側連結於前 • 述處理容器之含有電容成分之阻抗調整部， 前述阻抗調整部以使從前述陰極經由電漿、前述陽極 、及前述處理容器之壁部至前述整合電路之接地殼體爲止 之阻抗値小於從前述陰極經由電漿及前述處理容器之壁部 至前述整合電路之接地殼體爲止之阻抗値之方式調整該阻 抗値。 3 3 · —種電漿處理方法，其目的係在處理容器內利用 高頻電力實施處理氣體之電漿化，利用該電漿對基板進行 處理，其特徵爲： -43- 200540987 上 且 緣 絕 爲 器 容 彐二 理 處 該 與 而， 內極 器電 容部 理下 處及 該極 於電 位部 著上 0)設之 U 配對 相 連結著其一端側經由第1整合電路連結於前述上部電 極之10MHz〜30MHz之第1高頻電源， 連結著其一端側經由第2整合電路連結於前述下部電 極之2MHz〜6MHz之第2高頻電源， 配設著其一端側連結於前述下部電極且另一端側連結 φ 於前述處理容器之含有電容成分之第1阻抗調整部， 配設著其一端側連結於前述上部電極且另一端側連結 於前述處理容器之含有電容成分之第2阻抗調整部， 基板載置於前述下部電極上， 前述第1阻抗調整部以使從前述上部電極經由電漿、 前述下部電極、及前述處理容器之壁部至前述第1整合電 路之接地殻體爲止之前述第1高頻電源之頻率之阻抗値小 於從前述上部電極經由電漿及前述處理容器之壁部至前述 • 弟1整合電路之接地遗體爲止之則述第1局頻電源之頻率 之阻抗値之方式調整該阻抗値， 前述第2阻抗調整部以使從前述下部電極經由電漿、 前述上部電極、及前述處理容器之壁部至前述第2整合電 路之接地殼體爲止之前述第2高頻電源之頻率之阻抗値小 於從前述下部電極經由電漿及前述處理容器之壁部至前述 第2整合電路之接地殼體爲止之前述第2高頻電源之頻率 之阻抗値之方式調整該阻抗値。 3 4 · —種電漿處理方法，其目的係在處理容器內利用 -44- 200540987 (11) 局頻電力貫處理:¾體之電化，利用該電獎對基板進行 處理，其特徵爲： 配設著位於該處理容器內而與該處理容器爲絕緣且爲 上下相對配設之上部電極及下部電極， 連結著其一端側經由第1整合電路連結於前述下部電 極之10MHz〜30MHz之第1高頻電源， 連結者其一端側經由第2整合電路連結於前述下部電 ^ 極之2MHz〜6MHz之第2高頻電源， 基板載置於前述下部電極上， 配設著其一端側連結於前述上部電極且另一端側連結 於前述處理容器之含有電容成分之第1阻抗調整部及第2 阻抗調整部， 前述第1阻抗調整部以使從前述下部電極經由電漿、 前述上部電極、及前述處理容器之壁部至前述第1整合電 路之接地殻體爲止之前述第1高頻電源之頻率之阻抗値小 φ 於從前述下部電極經由電槳及前述處理容器之壁部至前述 第1整合電路之接地殻體爲止之前述第1高頻電源之頻率 之阻抗値之方式調整該阻抗値， 前述第2阻抗調整部以使從前述下部電極經由電漿、 前述上部電極、及前述處理容器之壁部至前述第2整合電 路之接地殼體爲止之前述第2高頻電源之頻率之阻抗値小 於從前述下部電極經由電漿及前述處理容器之壁部至前述 第2整合電路之接地殼體爲止之前述第2高頻電源之頻率 之阻抗値之方式調整該阻抗値。 -45-200540987 (1) 10. Scope of patent application1. A plasma processing device whose purpose is to plasma-treat a processing gas by using high-frequency power in a processing container, and use the plasma to process a substrate. : A cathode and an anode which are located in the processing container and are insulated from the processing container and are arranged opposite to each other; one end side of which is connected to the aforementioned high frequency power source via an integrated circuit; Φ and one end side of which is connected to the aforementioned anode and another One end side is connected to the impedance adjusting part containing a capacitance component of the processing container; and the substrate is placed on an electrode on the lower side among the cathode and the anode, and the impedance adjusting part is configured to pass the cathode through the plasma, the anode, And the impedance 为止 from the wall portion of the processing container to the grounded shell of the integrated circuit is smaller than the impedance 为止 from the cathode through the plasma and the wall portion of the processing container to the grounded shell of the integrated circuit. The impedance 値 〇2. As in the plasma processing device of the first scope of the patent application, wherein the aforementioned impedance adjustment So that the cathode via a wall portion from plasma, the anode, and the handling of the container until the ground shell of the integrated circuit to a minimum impedance value of the impedance value adjusted. 3. The plasma processing device according to item 1 of the scope of patent application, wherein when the impedance adjusting section adjusts the impedance 値 to change the current 流入 flowing into the anode, the method is such that the maximum 1 is within 10% of the maximum 値. Set -35- 200540987 (2) Set the impedance 値. 4. The plasma processing device according to item 1 of the scope of patent application, wherein the aforementioned impedance adjusting section is configured in such a manner that the impedance 値 can be changed. 5. If the plasma processing device of item 1 of the scope of the patent application 'wherein the aforementioned plasma processing device further has a control section' for storing information for the purpose of making the type of plasma processing and the adjustment of the aforementioned impedance adjustment section correspond to each other , Read the impedance adjustment 对应 corresponding to the selected type of plasma treatment, and φ output a control signal for the purpose of adjusting the aforementioned impedance adjustment section. 6. The plasma processing apparatus according to item 1 of the scope of the patent application, wherein the impedance adjusting section is a dielectric material containing a capacitor component disposed between the anode and the processing container. 7. The plasma processing device according to item 1 of the patent application scope, wherein a plurality of the aforementioned impedance adjusting sections are used, and one end side of each impedance adjusting section is connected to a longitudinally isolated portion of the anode. 8 · A plasma processing device, the purpose of which is to use high-frequency electric power to plasma the processing gas in the processing container, and use the plasma to process the substrate, which is characterized by having: The processing container is insulated and is provided with upper and lower electrodes opposite to each other; one end of the processing container is connected to the first high-frequency power source of 10 MHz to 30 MHz through a first integrated circuit; and one end of the processing container is connected through a second integrated circuit. The second high-frequency power supply of 2MHz to 6MHZ connected to the lower electrode; one end side is connected to the lower electrode and the other end side is connected to the aforementioned-36- 200540987 (3) the first impedance adjustment section containing a capacitor component of the processing container And a second impedance adjustment section containing a capacitive component connected at one end side to the upper electrode and at the other end side to the preprocessing container, and the substrate is placed on the lower electrode, and the first impedance adjustment section The upper electrode passes through the plasma, the front lower electrode, and the wall portion of the processing container to the grounding body of the first integrated circuit. The impedance 値 of the frequency of the power source is less than φ, and the impedance 値 is adjusted in a manner that the upper electrode passes the plasma and the wall portion of the processing container to the grounding case of the first integrated circuit, and the impedance 値, The second impedance adjustment unit is configured to make the impedance of the second high-frequency power source from the lower electrode through the plasma, the front upper electrode, and the wall of the processing container to the second integrated circuit grounding case smaller than the aforementioned impedance. The lower electrode adjusts the impedance 値 by means of # anti-frequency of the aforementioned second high-frequency power source through the plasma and the wall portion of the processing container to the grounded shell of the aforementioned integrated circuit. 9. The plasma processing device according to item 8 of the scope of patent application, wherein the first impedance adjustment unit is connected from the upper electrode through the plasma, the lower electrode, and the wall portion of the processing container to the first integrated circuit. The impedance 値 of the frequency of the first high-frequency power source up to the ground case is adjusted so that the impedance 小 is small, and the second impedance adjustment unit passes the lower electrode through the plasma, the upper electrode, and the wall portion of the processing container. The impedance of the frequency of the aforementioned second high-frequency power source up to the aforementioned grounded case of the second integrated electric power is described from 1 to 2 from 路 最 j 乂 · 刖 路 最 37- 200540987 (4) Adjust the impedance in a small way. 10. The plasma processing device according to item 8 of the scope of the patent application, wherein the first impedance adjustment unit uses the adjustment impedance 调整 to change the mode of the high-frequency current 値 of the first high-frequency power source flowing into the lower electrode, and sets The impedance 値 of the current 値 which is less than 10% of the maximum 値 can be obtained. The second impedance adjustment unit uses the adjustment impedance 値 to change the method of the high-frequency current 流入 of the second high-frequency power source flowing into the upper electrode. Set φ to get the impedance 値 within 10% of the maximum 该 of the current 値. 1 1. The plasma processing device according to item 8 of the scope of patent application, wherein the first impedance adjusting section and the second impedance adjusting section are respectively composed of an impedance that can change the frequency of the first high-frequency power source and the second section It is constituted by the impedance of the high-frequency power source. 12. The plasma processing apparatus according to item 8 of the patent application, wherein the aforementioned plasma processing apparatus further has a control section for storing the type of plasma processing and the aforementioned first impedance adjusting section and the aforementioned second impedance adjusting section. The data of the adjustment of # are corresponding to each other, read the impedance adjustment corresponding to the selected plasma processing category, and output a control signal for the purpose of adjusting the first impedance adjustment section and the second impedance adjustment section. 13. The plasma processing device according to item 8 of the scope of patent application, wherein the first impedance adjustment unit is a dielectric material containing a capacitor component disposed between the lower electrode and the processing container, and the second impedance adjustment unit is disposed A dielectric material containing a capacitive component between the upper electrode and the processing container. 14. The plasma processing device according to item 8 of the scope of patent application, in which • 38- 200540987 (5) A plurality of the aforementioned first impedance adjusting sections are used, and one end of each impedance adjusting section is connected to the lower electrode in a longitudinal direction to be isolated from each other. A plurality of the aforementioned second impedance adjusting portions are used for the portions, and one end side of each impedance adjusting portion is connected to a portion separated from each other in the longitudinal direction of the upper electrode. 1 5 · A plasma treatment device whose purpose is to plasma-process a processing gas using high-frequency power in a processing container, and to use the plasma to process a substrate, which is characterized in that: φ is located in the processing container and The upper electrode and the lower electrode are insulated from the processing container and are arranged opposite to each other; one end side is connected to the first high-frequency power source of 10 MHz to 30 MHz through the first integration circuit; and one end side is connected through the second integration The circuit is connected to the second high-frequency power source of 2MHz to 6MHz of the lower electrode, and the first impedance adjustment part and the second impedance adjustment containing the capacitance component are connected to the upper electrode at one end side and to the processing container at the other end side. φ the entire part; and the substrate is placed on the lower electrode, and the first impedance adjustment part passes from the lower electrode through the plasma, the upper electrode, and the wall portion of the processing container to the ground shell of the first integrated circuit. The impedance 値 of the frequency of the first high-frequency power source is less than that from the lower electrode through the plasma and the wall portion of the processing container to the first The impedance 値 of the frequency of the first high-frequency power source up to the grounding case of the circuit is adjusted, and the second impedance adjustment section allows the lower electrode to pass through the plasma, -39- 200540987 (6) The impedance 値 of the frequency of the second electrode from the upper electrode and the wall portion of the processing container to the grounding case of the second integrated circuit is smaller than that from the lower electrode through the plasma and the wall portion of the processing container to the foregoing. The impedance 値 is adjusted in a manner of the impedance 値 of the frequency of the aforementioned second high-frequency power source up to the ground case of the second integrated circuit. 1 6. The plasma processing apparatus according to item 15 of the scope of patent application, wherein the first impedance adjusting section passes from the lower electrode to the first section through the plasma, the upper electrode and the wall portion of the processing container to the first section. The impedance 値 of the frequency of the first high-frequency power source until the ground case of the integrated circuit is adjusted so that the impedance 最小 is the smallest, and the second impedance adjustment unit passes the lower electrode through the plasma, the upper electrode, and the processing. The impedance 値 of the frequency of the second high-frequency power source from the wall portion of the container to the grounding case of the second integrated circuit is adjusted to be the smallest. 17. If the plasma processing device according to item 15 of the scope of the patent application, wherein the aforementioned first impedance adjustment unit uses a method of adjusting the impedance 値 to change the high-frequency current 値 of the first high-frequency power source flowing into the upper electrode, It is set to obtain the impedance 値 of the current 値 which is within 10% of the maximum 値. The aforementioned second impedance adjustment unit adjusts the impedance 値 to change the high-frequency current 値 of the second high-frequency power source flowing into the upper electrode. , Set the impedance 値 that can get the maximum 该 of this current 値 within 10%. 1 8 · The plasma processing device according to item 15 of the scope of patent application, wherein the first impedance adjusting section and the second impedance adjusting section are respectively composed of an impedance that can change the frequency of the first high-frequency power source and the aforementioned first 2 High frequency -40- 200540987 (7) It is constituted by the impedance of the frequency of the power supply. 1 9. The plasma processing apparatus according to item 15 of the scope of patent application, wherein the aforementioned plasma processing apparatus further has a control section for storing the type of plasma processing and the aforementioned first impedance adjustment section and the aforementioned second impedance The data of the adjustment section of the adjustment section corresponds to each other, reads the impedance adjustment corresponding to the selected plasma processing category, and outputs a control signal for the purpose of adjusting the first impedance adjustment section and the second impedance adjustment section. φ 2 0. The plasma processing device according to item 15 of the scope of patent application, wherein the first impedance adjustment section and the second impedance adjustment section are dielectric materials containing a capacitor component disposed between the upper electrode and the processing container, respectively. . 2 1 · If the plasma processing device according to item 15 of the scope of patent application, a plurality of the aforementioned first impedance adjusting sections are used, and one end of each impedance adjusting section is connected to a longitudinally isolated portion of the lower electrode, using a plurality of Each of the second impedance adjustment sections described above, one of the φ end sides of each impedance adjustment section is connected to a portion of the lower electrode that is isolated from each other in the longitudinal direction. 22. The plasma processing apparatus according to item 1 of the patent application scope, wherein the area of the aforementioned substrate is lm2 or more. 23. The plasma processing apparatus according to item 8 of the patent application, wherein the area of the substrate is lm2 or more. 24. Plasma treatment device such as the scope of application for patent item 15. The area of the substrate is lm2 or more. 25. If the plasma processing device according to item 22 of the patent application scope, the total 値 of the high-frequency power used is 10 kW or more. -41-200540987 (8) 2 6 · If you apply for a plasma processing device in the scope of patent application No. 23, the total amount of local frequency power used is 値 10kW or more. 2 7 · If the plasma processing device in item 24 of the scope of patent application, the total amount of still-frequency power used is 10 kW or more. 28. If the plasma processing device according to item 1 of the patent application scope, wherein the cathode and the anode constitute an upper electrode and a lower electrode, respectively, the frequency of the high-frequency power source is 10MHz to 30MHz, and the area of the substrate is lm2 or more. The gap between the upper electrode and the lower electrode is 50 mm to 300 mm, and the processing pressure is i3 Pa to 27 Pa. The substrate is etched with a halogen-containing processing gas. 2 9. The plasma processing device according to item 1 of the scope of patent application, wherein the cathode and the anode constitute a lower electrode and an upper electrode respectively, the frequency of the high-frequency power source is 10 MHz to 30 MHz, and the area of the substrate is lm2 or more, φ The gap between the upper electrode and the lower electrode is 200 mm to 700 mm, and the processing pressure is 0.7 Pa to 13 Pa. The substrate is etched with a halogen-containing processing gas. 30. If the plasma processing device of item 8 of the patent application scope, wherein the area of the substrate is lm2 or more, the first barrel frequency power supply is connected to the upper electrode side, and the gap between the upper electrode and the lower electrode is 50. The processing pressure is from 3 mm to 3 00 mm, and the processing pressure is from 3 Pa to 27 Pa. The substrate is etched with a halogen-containing processing gas. -42- 200540987 (9) 3 1 · If the plasma processing device of item 15 of the patent application scope, wherein the area of the substrate is lm2 or more, the first high-frequency power supply is connected to the lower electrode side, the upper electrode and The gap between the aforementioned lower electrodes is 200 to 700 mm, the processing pressure is 0.7 Pa to 13 Pa, and the etching process is performed using a halogen-containing processing gas substrate. 3 2 · —A plasma processing method, the purpose of which is to use plasma high-frequency power to plasmaize the processing gas in the processing container, and use the plasma to process the substrate. It is characterized by: A cathode and an anode that are insulated from the processing container and are opposite to each other. One end of the cathode is connected to a high-frequency power source through an integrated circuit. The substrate is placed on an electrode on the lower side of the cathode and the anode, and is provided with One end side is connected to the anode and the other end side is connected to the impedance adjusting part of the processing container containing a capacitive component, and the impedance adjusting part is configured so that the cathode passes the plasma, the anode, and the wall portion of the processing container. The impedance 为止 until the grounded casing of the integrated circuit is smaller than the impedance 从 from the cathode through the plasma and the wall portion of the processing container to the grounded casing of the integrated circuit. 3 3 · —A plasma processing method, the purpose of which is to use high-frequency power to plasma the processing gas in the processing container, and use the plasma to process the substrate. It is characterized by: -43- 200540987 In order to deal with the two problems of the device capacity, the U pairing provided at the bottom of the capacitor of the internal electrode and above the potential is connected to one end side and connected to the upper electrode through the first integration circuit. The first high-frequency power supply of 10MHz to 30MHz is connected to one end side of the second high-frequency power supply of 2MHz to 6MHz connected to the lower electrode via a second integration circuit, and one end side is connected to the lower electrode and the other end is connected. A side impedance φ is connected to the first impedance adjustment part containing a capacitance component in the processing container, and a second impedance adjustment part containing a capacitance component is connected to one end side of the upper electrode and the other end side is connected to the processing container. It is placed on the lower electrode, and the first impedance adjustment unit is configured to pass from the upper electrode through the plasma, the lower electrode, and the wall portion of the processing container to The impedance 频率 of the frequency of the first high-frequency power source up to the grounding case of the first integrated circuit is smaller than that from the upper electrode through the plasma and the wall portion of the processing container to the grounded body of the first integrated circuit. Then, the impedance 値 is adjusted in the manner of the impedance 値 of the frequency of the first local-frequency power supply. The second impedance adjustment unit passes the lower electrode through the plasma, the upper electrode, and the wall portion of the processing container to the second The impedance 値 of the frequency of the second high-frequency power source up to the grounding case of the integrated circuit is smaller than the second height from the lower electrode through the plasma and the wall portion of the processing container to the grounding case of the second integration circuit. The impedance of the frequency source is adjusted by the impedance of the frequency. 3 4 · —A plasma processing method, the purpose of which is to use -44- 200540987 in the processing container. (11) Local frequency electric power continuous processing: ¾ body electrification, using this electricity award to process the substrate, its characteristics are: An upper electrode and a lower electrode which are located in the processing container and are insulated from the processing container, and are arranged opposite to each other, are connected to one end side and connected to the lower electrode at a first height of 10 MHz to 30 MHz via a first integrated circuit. A high-frequency power source whose one end side is connected to a second high-frequency power source of 2 MHz to 6 MHz of the lower electrode through a second integrated circuit. The substrate is placed on the lower electrode, and one end side is connected to the upper part. The electrode and the other end side are connected to the first impedance adjustment section and the second impedance adjustment section containing a capacitance component of the processing container, and the first impedance adjustment section is configured to pass the lower electrode through the plasma, the upper electrode, and the processing. The impedance of the frequency of the first high-frequency power source from the wall portion of the container to the grounded shell of the first integrated circuit is smaller than φ from the lower electrode through the electric paddle and the front The impedance 値 is adjusted in a manner of the impedance 値 of the frequency of the first high-frequency power source from the wall portion of the processing container to the grounded housing of the first integrated circuit, and the second impedance adjustment unit is configured to pass electricity from the lower electrode through the The impedance of the second high-frequency power source from the slurry, the upper electrode, and the wall of the processing container to the grounding case of the second integrated circuit is smaller than the impedance from the lower electrode through the plasma and the wall of the processing container. The impedance 値 is adjusted in such a manner that the impedance 値 of the second high-frequency power source reaches the ground of the second integrated circuit. -45-
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