CN102236265B - 光刻设备和制造物品的方法 - Google Patents

光刻设备和制造物品的方法 Download PDF

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Publication number
CN102236265B
CN102236265B CN201110103590.7A CN201110103590A CN102236265B CN 102236265 B CN102236265 B CN 102236265B CN 201110103590 A CN201110103590 A CN 201110103590A CN 102236265 B CN102236265 B CN 102236265B
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China
Prior art keywords
light
area
substrate
arc
shielding plate
Prior art date
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CN201110103590.7A
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English (en)
Chinese (zh)
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CN102236265A (zh
Inventor
森坚一郎
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Canon Inc
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Canon Inc
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Publication of CN102236265A publication Critical patent/CN102236265A/zh
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Publication of CN102236265B publication Critical patent/CN102236265B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201110103590.7A 2010-04-28 2011-04-25 光刻设备和制造物品的方法 Active CN102236265B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-104232 2010-04-28
JP2010104232A JP5127875B2 (ja) 2010-04-28 2010-04-28 リソグラフィ装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
CN102236265A CN102236265A (zh) 2011-11-09
CN102236265B true CN102236265B (zh) 2014-01-29

Family

ID=44858017

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110103590.7A Active CN102236265B (zh) 2010-04-28 2011-04-25 光刻设备和制造物品的方法

Country Status (5)

Country Link
US (1) US8760627B2 (https=)
JP (1) JP5127875B2 (https=)
KR (1) KR101359080B1 (https=)
CN (1) CN102236265B (https=)
TW (1) TWI442188B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5836652B2 (ja) 2011-06-10 2015-12-24 キヤノン株式会社 インプリント方法、インプリント装置及び物品の製造方法
JP5789135B2 (ja) * 2011-06-17 2015-10-07 キヤノン株式会社 露光装置及びデバイスの製造方法
JP5868094B2 (ja) * 2011-09-26 2016-02-24 キヤノン株式会社 露光装置及びデバイス製造方法
JP6029289B2 (ja) 2012-02-28 2016-11-24 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
JP6012200B2 (ja) * 2012-02-28 2016-10-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
WO2014016163A1 (en) * 2012-07-23 2014-01-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP6200135B2 (ja) * 2012-07-24 2017-09-20 キヤノン株式会社 インプリント装置、インプリント方法、および、物品製造方法
DE102012218074A1 (de) * 2012-10-04 2013-08-14 Carl Zeiss Smt Gmbh Blenden-Vorrichtung
US20150234281A1 (en) * 2012-10-05 2015-08-20 Rudolph Technologies, Inc. Blade for Substrate Edge Protection During Photolithography
JP6288985B2 (ja) 2013-08-13 2018-03-07 キヤノン株式会社 リソグラフィ装置、および物品の製造方法
NL2016271B1 (en) * 2016-02-16 2017-08-22 Liteq B V Lithographic apparatus and method for preventing peripheral exposure of a substrate.
JP6177409B2 (ja) * 2016-10-19 2017-08-09 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
JP6936672B2 (ja) * 2017-09-19 2021-09-22 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法
JP7162430B2 (ja) * 2018-02-27 2022-10-28 株式会社オーク製作所 投影露光装置
JP7145620B2 (ja) * 2018-02-27 2022-10-03 株式会社オーク製作所 投影露光装置
KR102439935B1 (ko) * 2018-02-27 2022-09-02 가부시키가이샤 오크세이사쿠쇼 투영 노광 장치
JP7179420B2 (ja) 2019-01-29 2022-11-29 株式会社オーク製作所 投影露光装置及び投影露光装置に使用する遮光板
JP7446069B2 (ja) * 2019-09-03 2024-03-08 キヤノン株式会社 露光装置及び物品の製造方法
JP7446799B2 (ja) * 2019-12-05 2024-03-11 キヤノン株式会社 インプリント方法

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CN1508631A (zh) * 2002-12-19 2004-06-30 Asml 器件制造方法和所制出的器件以及计算机程序和光刻装置
EP1582923A2 (en) * 2004-03-29 2005-10-05 Canon Kabushiki Kaisha Processing apparatus
CN101178547A (zh) * 2006-11-07 2008-05-14 Asml荷兰有限公司 光刻设备和器件制造方法

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JP3056206B1 (ja) * 1999-03-18 2000-06-26 広島日本電気株式会社 ダミーパターン形成方法及び半導体製造方法
US6830852B2 (en) 2001-07-19 2004-12-14 Nikon Corporation Stencil reticles for use in charged-particle-beam microlithography, and pattern-determination methods for such reticles
US6680774B1 (en) * 2001-10-09 2004-01-20 Ultratech Stepper, Inc. Method and apparatus for mechanically masking a workpiece
JP2003158067A (ja) * 2001-11-22 2003-05-30 Hitachi Ltd 半導体装置の製造方法および露光装置
JP2005045160A (ja) * 2003-07-25 2005-02-17 Matsushita Electric Ind Co Ltd 露光方法
JP4458329B2 (ja) 2003-12-26 2010-04-28 キヤノン株式会社 露光装置及びデバイス製造方法
JP2006040915A (ja) * 2004-07-22 2006-02-09 Seiko Epson Corp 半導体装置の製造方法、及びその製造装置、並びに電気光学装置の製造方法
US7936447B2 (en) * 2006-05-08 2011-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4838698B2 (ja) 2006-12-19 2011-12-14 キヤノン株式会社 露光装置およびデバイス製造方法
US7777863B2 (en) * 2007-05-30 2010-08-17 Asml Netherlands B.V. Lithographic apparatus with mask to prevent exposure of peripheral exposure region of substrate
JP2009239018A (ja) * 2008-03-27 2009-10-15 Orc Mfg Co Ltd 投影露光装置
NL2003962A (en) * 2008-12-24 2010-06-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5789135B2 (ja) * 2011-06-17 2015-10-07 キヤノン株式会社 露光装置及びデバイスの製造方法
JP5868094B2 (ja) * 2011-09-26 2016-02-24 キヤノン株式会社 露光装置及びデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1508631A (zh) * 2002-12-19 2004-06-30 Asml 器件制造方法和所制出的器件以及计算机程序和光刻装置
EP1582923A2 (en) * 2004-03-29 2005-10-05 Canon Kabushiki Kaisha Processing apparatus
CN101178547A (zh) * 2006-11-07 2008-05-14 Asml荷兰有限公司 光刻设备和器件制造方法

Non-Patent Citations (1)

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JP特开2005-45160A 2005.02.17

Also Published As

Publication number Publication date
KR20110120220A (ko) 2011-11-03
CN102236265A (zh) 2011-11-09
JP5127875B2 (ja) 2013-01-23
JP2011233781A (ja) 2011-11-17
US20110267595A1 (en) 2011-11-03
TW201200970A (en) 2012-01-01
TWI442188B (zh) 2014-06-21
US8760627B2 (en) 2014-06-24
KR101359080B1 (ko) 2014-02-05

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