CN102177230B - 用于去除铜的氧化物蚀刻残余物和防止铜电沉积的含水酸性制剂 - Google Patents

用于去除铜的氧化物蚀刻残余物和防止铜电沉积的含水酸性制剂 Download PDF

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Publication number
CN102177230B
CN102177230B CN200980140203.8A CN200980140203A CN102177230B CN 102177230 B CN102177230 B CN 102177230B CN 200980140203 A CN200980140203 A CN 200980140203A CN 102177230 B CN102177230 B CN 102177230B
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China
Prior art keywords
weight
dual damascene
composition
etched
photoresist
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CN200980140203.8A
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English (en)
Chinese (zh)
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CN102177230A (zh
Inventor
格伦.韦斯特伍德
洪性辰
金相仁
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Anwantuo Materials LLC
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Avantor Performance Materials LLC
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
CN200980140203.8A 2008-10-09 2009-10-06 用于去除铜的氧化物蚀刻残余物和防止铜电沉积的含水酸性制剂 Active CN102177230B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10409808P 2008-10-09 2008-10-09
US61/104,098 2008-10-09
PCT/US2009/059603 WO2010042457A1 (en) 2008-10-09 2009-10-06 Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition

Publications (2)

Publication Number Publication Date
CN102177230A CN102177230A (zh) 2011-09-07
CN102177230B true CN102177230B (zh) 2014-02-19

Family

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CN200980140203.8A Active CN102177230B (zh) 2008-10-09 2009-10-06 用于去除铜的氧化物蚀刻残余物和防止铜电沉积的含水酸性制剂

Country Status (11)

Country Link
US (1) US8481472B2 (enExample)
EP (1) EP2334774B1 (enExample)
JP (1) JP5476388B2 (enExample)
KR (2) KR101521066B1 (enExample)
CN (1) CN102177230B (enExample)
BR (1) BRPI0920545A2 (enExample)
CA (1) CA2740027A1 (enExample)
IL (1) IL212158A0 (enExample)
MY (1) MY160647A (enExample)
WO (1) WO2010042457A1 (enExample)
ZA (1) ZA201103311B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102177230B (zh) * 2008-10-09 2014-02-19 安万托特性材料股份有限公司 用于去除铜的氧化物蚀刻残余物和防止铜电沉积的含水酸性制剂
JP5519728B2 (ja) * 2011-05-17 2014-06-11 富士フイルム株式会社 エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法
TWI572711B (zh) * 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
KR102377875B1 (ko) * 2015-10-07 2022-03-25 주식회사 이엔에프테크놀로지 유리기판 세정액 조성물
US11678433B2 (en) 2018-09-06 2023-06-13 D-Wave Systems Inc. Printed circuit board assembly for edge-coupling to an integrated circuit
US11647590B2 (en) 2019-06-18 2023-05-09 D-Wave Systems Inc. Systems and methods for etching of metals
US12033996B2 (en) 2019-09-23 2024-07-09 1372934 B.C. Ltd. Systems and methods for assembling processor systems

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003006597A1 (en) * 2001-07-09 2003-01-23 Mallinckrodt Baker Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
CN1526008A (zh) * 2001-07-09 2004-09-01 ���ֿ����ر��˹�˾ 包含无氨氟化物盐的微电子清洗组合物
WO2006093770A1 (en) * 2005-02-25 2006-09-08 Ekc Technology, Inc. Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5855811A (en) 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6224785B1 (en) 1997-08-29 2001-05-01 Advanced Technology Materials, Inc. Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US6361712B1 (en) 1999-10-15 2002-03-26 Arch Specialty Chemicals, Inc. Composition for selective etching of oxides over metals
US6468913B1 (en) 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
US7456140B2 (en) * 2000-07-10 2008-11-25 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6777380B2 (en) * 2000-07-10 2004-08-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6391794B1 (en) 2000-12-07 2002-05-21 Micron Technology, Inc. Composition and method for cleaning residual debris from semiconductor surfaces
DE60238244D1 (de) * 2001-03-27 2010-12-23 Advanced Tech Materials Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US6794292B2 (en) 2001-07-16 2004-09-21 United Microelectronics Corp. Extrusion-free wet cleaning process for copper-dual damascene structures
JP3403187B2 (ja) * 2001-08-03 2003-05-06 東京応化工業株式会社 ホトレジスト用剥離液
US7393819B2 (en) 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
JP4374989B2 (ja) * 2003-11-12 2009-12-02 三菱瓦斯化学株式会社 洗浄液およびそれを用いた洗浄方法
JP4456424B2 (ja) * 2004-06-29 2010-04-28 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
JP2006154722A (ja) 2004-10-28 2006-06-15 Daikin Ind Ltd Ｃｕ／ｌｏｗ−ｋ多層配線構造のアッシング残渣の剥離液及び剥離方法
KR100675284B1 (ko) * 2005-02-01 2007-01-26 삼성전자주식회사 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법
CN101198416A (zh) 2005-04-15 2008-06-11 高级技术材料公司 从微电子器件上清除离子注入光致抗蚀剂层的配方
KR100705416B1 (ko) 2005-06-15 2007-04-10 삼성전자주식회사 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
KR100655647B1 (ko) * 2005-07-04 2006-12-08 삼성전자주식회사 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법
AU2006340825A1 (en) 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
JP2007220833A (ja) * 2006-02-15 2007-08-30 Daikin Ind Ltd エッチング水溶液
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
CN102177230B (zh) * 2008-10-09 2014-02-19 安万托特性材料股份有限公司 用于去除铜的氧化物蚀刻残余物和防止铜电沉积的含水酸性制剂
US8444768B2 (en) * 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US9587208B2 (en) * 2012-06-13 2017-03-07 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid composition, method for cleaning semiconductor element, and method for manufacturing semiconductor element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003006597A1 (en) * 2001-07-09 2003-01-23 Mallinckrodt Baker Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
CN1526008A (zh) * 2001-07-09 2004-09-01 ���ֿ����ر��˹�˾ 包含无氨氟化物盐的微电子清洗组合物
WO2006093770A1 (en) * 2005-02-25 2006-09-08 Ekc Technology, Inc. Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material

Also Published As

Publication number Publication date
EP2334774A1 (en) 2011-06-22
KR20110086813A (ko) 2011-08-01
KR101486116B1 (ko) 2015-01-28
MY160647A (en) 2017-03-15
EP2334774B1 (en) 2014-03-05
KR20140120376A (ko) 2014-10-13
US8481472B2 (en) 2013-07-09
CN102177230A (zh) 2011-09-07
JP5476388B2 (ja) 2014-04-23
US20110195887A1 (en) 2011-08-11
WO2010042457A1 (en) 2010-04-15
IL212158A0 (en) 2011-06-30
KR101521066B1 (ko) 2015-05-18
JP2012505293A (ja) 2012-03-01
BRPI0920545A2 (pt) 2015-12-29
CA2740027A1 (en) 2010-04-15
ZA201103311B (en) 2012-01-25

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