MY160647A - Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition - Google Patents
Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodepositionInfo
- Publication number
- MY160647A MY160647A MYPI2011001485A MYPI2011001485A MY160647A MY 160647 A MY160647 A MY 160647A MY PI2011001485 A MYPI2011001485 A MY PI2011001485A MY PI2011001485 A MYPI2011001485 A MY PI2011001485A MY 160647 A MY160647 A MY 160647A
- Authority
- MY
- Malaysia
- Prior art keywords
- copper
- aqueous acidic
- prevention
- oxide etch
- residue removal
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 title abstract 2
- 239000005751 Copper oxide Substances 0.000 title abstract 2
- 230000002378 acidificating effect Effects 0.000 title abstract 2
- 229910052802 copper Inorganic materials 0.000 title abstract 2
- 239000010949 copper Substances 0.000 title abstract 2
- 229910000431 copper oxide Inorganic materials 0.000 title abstract 2
- 238000004070 electrodeposition Methods 0.000 title 1
- 238000009472 formulation Methods 0.000 title 1
- 230000002265 prevention Effects 0.000 title 1
- 238000004377 microelectronic Methods 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000009977 dual effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10409808P | 2008-10-09 | 2008-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY160647A true MY160647A (en) | 2017-03-15 |
Family
ID=41402304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2011001485A MY160647A (en) | 2008-10-09 | 2009-10-06 | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US8481472B2 (enExample) |
| EP (1) | EP2334774B1 (enExample) |
| JP (1) | JP5476388B2 (enExample) |
| KR (2) | KR101486116B1 (enExample) |
| CN (1) | CN102177230B (enExample) |
| BR (1) | BRPI0920545A2 (enExample) |
| CA (1) | CA2740027A1 (enExample) |
| IL (1) | IL212158A0 (enExample) |
| MY (1) | MY160647A (enExample) |
| WO (1) | WO2010042457A1 (enExample) |
| ZA (1) | ZA201103311B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101486116B1 (ko) * | 2008-10-09 | 2015-01-28 | 아반토르 퍼포먼스 머티리얼스, 인크. | 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 |
| JP5519728B2 (ja) * | 2011-05-17 | 2014-06-11 | 富士フイルム株式会社 | エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法 |
| TWI572711B (zh) * | 2012-10-16 | 2017-03-01 | 盟智科技股份有限公司 | 半導體製程用的清洗組成物及清洗方法 |
| KR102377875B1 (ko) * | 2015-10-07 | 2022-03-25 | 주식회사 이엔에프테크놀로지 | 유리기판 세정액 조성물 |
| US11678433B2 (en) | 2018-09-06 | 2023-06-13 | D-Wave Systems Inc. | Printed circuit board assembly for edge-coupling to an integrated circuit |
| US11647590B2 (en) | 2019-06-18 | 2023-05-09 | D-Wave Systems Inc. | Systems and methods for etching of metals |
| US12033996B2 (en) | 2019-09-23 | 2024-07-09 | 1372934 B.C. Ltd. | Systems and methods for assembling processor systems |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US5855811A (en) | 1996-10-03 | 1999-01-05 | Micron Technology, Inc. | Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication |
| US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6755989B2 (en) | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6224785B1 (en) | 1997-08-29 | 2001-05-01 | Advanced Technology Materials, Inc. | Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates |
| US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| US7129199B2 (en) | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| US6361712B1 (en) | 1999-10-15 | 2002-03-26 | Arch Specialty Chemicals, Inc. | Composition for selective etching of oxides over metals |
| US6468913B1 (en) | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
| US7456140B2 (en) * | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| US6777380B2 (en) * | 2000-07-10 | 2004-08-17 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| US6391794B1 (en) | 2000-12-07 | 2002-05-21 | Micron Technology, Inc. | Composition and method for cleaning residual debris from semiconductor surfaces |
| ATE487776T1 (de) * | 2001-03-27 | 2010-11-15 | Advanced Tech Materials | Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten |
| US6627587B2 (en) * | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
| MY139607A (en) | 2001-07-09 | 2009-10-30 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| US6794292B2 (en) | 2001-07-16 | 2004-09-21 | United Microelectronics Corp. | Extrusion-free wet cleaning process for copper-dual damascene structures |
| JP3403187B2 (ja) * | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
| US7393819B2 (en) | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
| JP4374989B2 (ja) * | 2003-11-12 | 2009-12-02 | 三菱瓦斯化学株式会社 | 洗浄液およびそれを用いた洗浄方法 |
| JP4456424B2 (ja) * | 2004-06-29 | 2010-04-28 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物 |
| US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
| JP2006154722A (ja) * | 2004-10-28 | 2006-06-15 | Daikin Ind Ltd | Ｃｕ／ｌｏｗ−ｋ多層配線構造のアッシング残渣の剥離液及び剥離方法 |
| KR100675284B1 (ko) * | 2005-02-01 | 2007-01-26 | 삼성전자주식회사 | 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법 |
| US7718590B2 (en) | 2005-02-25 | 2010-05-18 | Ekc Technology, Inc. | Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material |
| US8114220B2 (en) | 2005-04-15 | 2012-02-14 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| KR100705416B1 (ko) | 2005-06-15 | 2007-04-10 | 삼성전자주식회사 | 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법 |
| US7700533B2 (en) * | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
| KR100655647B1 (ko) * | 2005-07-04 | 2006-12-08 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법 |
| AU2006340825A1 (en) | 2005-11-09 | 2007-10-04 | Advanced Technology Materials, Inc. | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon |
| US7534753B2 (en) * | 2006-01-12 | 2009-05-19 | Air Products And Chemicals, Inc. | pH buffered aqueous cleaning composition and method for removing photoresist residue |
| JP2007220833A (ja) * | 2006-02-15 | 2007-08-30 | Daikin Ind Ltd | エッチング水溶液 |
| US7947637B2 (en) * | 2006-06-30 | 2011-05-24 | Fujifilm Electronic Materials, U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
| KR101486116B1 (ko) * | 2008-10-09 | 2015-01-28 | 아반토르 퍼포먼스 머티리얼스, 인크. | 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 |
| US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| WO2013187313A1 (ja) * | 2012-06-13 | 2013-12-19 | 三菱瓦斯化学株式会社 | 洗浄用液体組成物、半導体素子の洗浄方法、および半導体素子の製造方法 |
-
2009
- 2009-10-06 KR KR1020117010361A patent/KR101486116B1/ko active Active
- 2009-10-06 WO PCT/US2009/059603 patent/WO2010042457A1/en not_active Ceased
- 2009-10-06 CN CN200980140203.8A patent/CN102177230B/zh active Active
- 2009-10-06 CA CA2740027A patent/CA2740027A1/en not_active Abandoned
- 2009-10-06 KR KR1020147025882A patent/KR101521066B1/ko active Active
- 2009-10-06 BR BRPI0920545A patent/BRPI0920545A2/pt not_active Application Discontinuation
- 2009-10-06 MY MYPI2011001485A patent/MY160647A/en unknown
- 2009-10-06 JP JP2011531103A patent/JP5476388B2/ja active Active
- 2009-10-06 US US12/998,296 patent/US8481472B2/en active Active
- 2009-10-06 EP EP09736352.7A patent/EP2334774B1/en not_active Not-in-force
-
2011
- 2011-04-05 IL IL212158A patent/IL212158A0/en not_active IP Right Cessation
- 2011-05-06 ZA ZA2011/03311A patent/ZA201103311B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA2740027A1 (en) | 2010-04-15 |
| CN102177230B (zh) | 2014-02-19 |
| BRPI0920545A2 (pt) | 2015-12-29 |
| JP5476388B2 (ja) | 2014-04-23 |
| KR20140120376A (ko) | 2014-10-13 |
| KR101521066B1 (ko) | 2015-05-18 |
| WO2010042457A1 (en) | 2010-04-15 |
| US20110195887A1 (en) | 2011-08-11 |
| CN102177230A (zh) | 2011-09-07 |
| EP2334774A1 (en) | 2011-06-22 |
| KR20110086813A (ko) | 2011-08-01 |
| ZA201103311B (en) | 2012-01-25 |
| IL212158A0 (en) | 2011-06-30 |
| JP2012505293A (ja) | 2012-03-01 |
| US8481472B2 (en) | 2013-07-09 |
| EP2334774B1 (en) | 2014-03-05 |
| KR101486116B1 (ko) | 2015-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MY160647A (en) | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition | |
| WO2012009639A3 (en) | Aqueous cleaner for the removal of post-etch residues | |
| EP1932174A4 (en) | AQUEOUS OXIDIZING CLEANER FOR REMOVING RESIDUES AFTER A PLASMA ATTACK | |
| TW200942609A (en) | Compositions for removal of metal hard mask etching residues from a semiconductor substrate | |
| WO2010048139A3 (en) | Copper cleaning and protection formulations | |
| TWI372791B (en) | Etching compositions for copper-containing materials | |
| WO2013173743A3 (en) | Aqueous clean solution with low copper etch rate for organic residue removal improvement | |
| SG162725A1 (en) | Copper passivating post-chemical mechanical polishing cleaning composition and method of use | |
| WO2008144501A3 (en) | New antioxidants for post-cmp cleaning formulations | |
| IL220215A0 (en) | Analogues for the tretment or prevention of flavivirus infections | |
| EG25052A (en) | Detergent compositions. | |
| WO2009102817A3 (en) | Methods for removing dissolved metallic ions from aqueous solutions | |
| MX295029B (es) | Composiciones detergentes. | |
| MX288854B (es) | Composiciones detergentes. | |
| MX298662B (es) | Composiciones detergentes. | |
| WO2008137790A3 (en) | Cleaning compositions containing water soluble magnesium compound and methods of using them | |
| MX2011007324A (es) | Desarrollo de un aditivo de hidroxicaboxilato de aluminio. | |
| EP1981072A4 (en) | METAL PROCESS FOR SINGLE WAFER | |
| SG10201610631UA (en) | Liquid cleaner for the removal of post-etch residues | |
| WO2016042408A3 (en) | Compositions for etching titanium nitride having compatability with silicon germanide and tungsten | |
| WO2011130222A3 (en) | Compositions and methods comprising variant proteases | |
| GB0912562D0 (en) | LXR-antagonists for the prevention, reduction or inhibition of scarring | |
| SG143115A1 (en) | Formulation for removal of photoresist, etch residue and barc | |
| TWI563076B (en) | Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devices | |
| EP3601514A4 (en) | CLEANING COMPOSITIONS FOR REMOVING RESIDUES ON SEMICONDUCTOR SUBSTRATES |