KR101521066B1 - 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 - Google Patents

산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 Download PDF

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Publication number
KR101521066B1
KR101521066B1 KR1020147025882A KR20147025882A KR101521066B1 KR 101521066 B1 KR101521066 B1 KR 101521066B1 KR 1020147025882 A KR1020147025882 A KR 1020147025882A KR 20147025882 A KR20147025882 A KR 20147025882A KR 101521066 B1 KR101521066 B1 KR 101521066B1
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KR
South Korea
Prior art keywords
copper
etching
dual damascene
photoresist ashing
microelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
KR1020147025882A
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English (en)
Korean (ko)
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KR20140120376A (ko
Inventor
글렌 웨스트우드
성진 홍
상인 김
Original Assignee
아반토르 퍼포먼스 머티리얼스, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20140120376A publication Critical patent/KR20140120376A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
KR1020147025882A 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 Active KR101521066B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10409808P 2008-10-09 2008-10-09
US61/104,098 2008-10-09
PCT/US2009/059603 WO2010042457A1 (en) 2008-10-09 2009-10-06 Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020117010361A Division KR101486116B1 (ko) 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물

Publications (2)

Publication Number Publication Date
KR20140120376A KR20140120376A (ko) 2014-10-13
KR101521066B1 true KR101521066B1 (ko) 2015-05-18

Family

ID=41402304

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147025882A Active KR101521066B1 (ko) 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물
KR1020117010361A Active KR101486116B1 (ko) 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117010361A Active KR101486116B1 (ko) 2008-10-09 2009-10-06 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물

Country Status (11)

Country Link
US (1) US8481472B2 (enExample)
EP (1) EP2334774B1 (enExample)
JP (1) JP5476388B2 (enExample)
KR (2) KR101521066B1 (enExample)
CN (1) CN102177230B (enExample)
BR (1) BRPI0920545A2 (enExample)
CA (1) CA2740027A1 (enExample)
IL (1) IL212158A0 (enExample)
MY (1) MY160647A (enExample)
WO (1) WO2010042457A1 (enExample)
ZA (1) ZA201103311B (enExample)

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WO2010042457A1 (en) * 2008-10-09 2010-04-15 Mallinckrodt Baker, Inc. Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition
JP5519728B2 (ja) * 2011-05-17 2014-06-11 富士フイルム株式会社 エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法
TWI572711B (zh) * 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
KR102377875B1 (ko) * 2015-10-07 2022-03-25 주식회사 이엔에프테크놀로지 유리기판 세정액 조성물
US11678433B2 (en) 2018-09-06 2023-06-13 D-Wave Systems Inc. Printed circuit board assembly for edge-coupling to an integrated circuit
US11647590B2 (en) 2019-06-18 2023-05-09 D-Wave Systems Inc. Systems and methods for etching of metals
US12033996B2 (en) 2019-09-23 2024-07-09 1372934 B.C. Ltd. Systems and methods for assembling processor systems

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KR20110086813A (ko) * 2008-10-09 2011-08-01 아반토르 퍼포먼스 머티리얼스, 인크. 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물
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KR20150030196A (ko) * 2012-06-13 2015-03-19 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 세정용 액체 조성물, 반도체소자의 세정방법, 및 반도체소자의 제조방법

Also Published As

Publication number Publication date
JP2012505293A (ja) 2012-03-01
WO2010042457A1 (en) 2010-04-15
CN102177230B (zh) 2014-02-19
CN102177230A (zh) 2011-09-07
US8481472B2 (en) 2013-07-09
KR20140120376A (ko) 2014-10-13
IL212158A0 (en) 2011-06-30
CA2740027A1 (en) 2010-04-15
EP2334774A1 (en) 2011-06-22
US20110195887A1 (en) 2011-08-11
MY160647A (en) 2017-03-15
KR20110086813A (ko) 2011-08-01
EP2334774B1 (en) 2014-03-05
ZA201103311B (en) 2012-01-25
BRPI0920545A2 (pt) 2015-12-29
KR101486116B1 (ko) 2015-01-28
JP5476388B2 (ja) 2014-04-23

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