CN102157510B - 近接传感器封装结构及其制作方法 - Google Patents

近接传感器封装结构及其制作方法 Download PDF

Info

Publication number
CN102157510B
CN102157510B CN2010101281767A CN201010128176A CN102157510B CN 102157510 B CN102157510 B CN 102157510B CN 2010101281767 A CN2010101281767 A CN 2010101281767A CN 201010128176 A CN201010128176 A CN 201010128176A CN 102157510 B CN102157510 B CN 102157510B
Authority
CN
China
Prior art keywords
groove
substrate
light
conductive layers
sensing chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010101281767A
Other languages
English (en)
Chinese (zh)
Other versions
CN102157510A (zh
Inventor
赖律名
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Everlight Electronics Co Ltd
Original Assignee
Everlight Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to CN2010101281767A priority Critical patent/CN102157510B/zh
Priority to US13/578,601 priority patent/US20120305771A1/en
Priority to KR1020127022563A priority patent/KR20120137359A/ko
Priority to PCT/CN2011/070904 priority patent/WO2011098036A1/zh
Priority to JP2012552248A priority patent/JP2013519995A/ja
Publication of CN102157510A publication Critical patent/CN102157510A/zh
Application granted granted Critical
Publication of CN102157510B publication Critical patent/CN102157510B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/04—Systems determining the presence of a target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
CN2010101281767A 2010-02-12 2010-02-12 近接传感器封装结构及其制作方法 Expired - Fee Related CN102157510B (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2010101281767A CN102157510B (zh) 2010-02-12 2010-02-12 近接传感器封装结构及其制作方法
US13/578,601 US20120305771A1 (en) 2010-02-12 2011-02-10 Proximity Sensor Packaging Structure And Manufacturing Method Thereof
KR1020127022563A KR20120137359A (ko) 2010-02-12 2011-02-10 근접 센서 패키징 구조 및 이의 제작 방법
PCT/CN2011/070904 WO2011098036A1 (zh) 2010-02-12 2011-02-10 近接传感器封装结构及其制作方法
JP2012552248A JP2013519995A (ja) 2010-02-12 2011-02-10 近接センサパッケージ構造及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010101281767A CN102157510B (zh) 2010-02-12 2010-02-12 近接传感器封装结构及其制作方法

Publications (2)

Publication Number Publication Date
CN102157510A CN102157510A (zh) 2011-08-17
CN102157510B true CN102157510B (zh) 2013-11-06

Family

ID=44367280

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010101281767A Expired - Fee Related CN102157510B (zh) 2010-02-12 2010-02-12 近接传感器封装结构及其制作方法

Country Status (5)

Country Link
US (1) US20120305771A1 (enExample)
JP (1) JP2013519995A (enExample)
KR (1) KR20120137359A (enExample)
CN (1) CN102157510B (enExample)
WO (1) WO2011098036A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969388A (zh) * 2011-09-02 2013-03-13 光宝新加坡有限公司 整合式感测封装结构
TWI458113B (zh) 2012-05-04 2014-10-21 台灣典範半導體股份有限公司 Proximity sensor and its manufacturing method
TWI512313B (zh) * 2012-11-09 2015-12-11 Upi Semiconductor Corp 接近感測器及其運作方法
TWI490521B (zh) * 2012-11-14 2015-07-01 原相科技股份有限公司 近接式光感測器及製作方法
CN105806376A (zh) * 2012-11-23 2016-07-27 原相科技股份有限公司 近接式光传感器及制作方法
CN103066087B (zh) * 2012-12-20 2016-03-02 格科微电子（上海）有限公司 图像传感器模组和手持式电子装置
US9018645B2 (en) * 2013-08-29 2015-04-28 Stmicroelectronics Pte Ltd Optoelectronics assembly and method of making optoelectronics assembly
CN104332524B (zh) * 2014-08-26 2018-01-09 日月光半导体制造股份有限公司 电子装置、光学模块及其制造方法
TWI587003B (zh) * 2014-10-15 2017-06-11 昇佳電子股份有限公司 內建光障元件之封裝結構、形成光學封裝結構之方法與所形成之光學封裝結構
US10672937B2 (en) * 2015-09-02 2020-06-02 Pixart Imaging Inc. Optical sensor module and sensor chip thereof
CN206602107U (zh) * 2016-11-23 2017-10-31 创智能科技股份有限公司 指纹感测辨识封装结构
CN110098180B (zh) * 2018-01-31 2023-10-20 光宝新加坡有限公司 晶圆级感应模块及其制造方法
JP6974208B2 (ja) * 2018-02-16 2021-12-01 京セラ株式会社 受発光素子モジュールおよびセンサー装置
WO2019171214A1 (en) * 2018-03-06 2019-09-12 3M Innovative Properties Company Automatic registration between circuit dies and interconnects
KR102068161B1 (ko) * 2018-03-14 2020-01-20 (주)파트론 광학 센서 패키지 및 그 제조 방법
JP7072486B2 (ja) * 2018-10-29 2022-05-20 京セラ株式会社 近接センサ用パッケージ、近接センサ装置および電子モジュール
CN109346534B (zh) * 2018-11-23 2024-05-07 中国电子科技集团公司第四十四研究所 一种陶瓷管壳结构及其封装结构
US20220302355A1 (en) * 2019-08-29 2022-09-22 Kyocera Corporation Mounting board and electronic device
IT201900022632A1 (it) 2019-12-02 2021-06-02 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
CN111935939B (zh) * 2020-09-03 2021-01-22 潍坊歌尔微电子有限公司 密封结构、密封方法、传感器和电子设备
KR102546105B1 (ko) * 2020-12-15 2023-06-21 (주)파트론 광학 센서 패키지
US11715753B2 (en) * 2020-12-30 2023-08-01 Applied Materials, Inc. Methods for integration of light emitting diodes and image sensors
CN114334885A (zh) * 2021-12-10 2022-04-12 苏州瞬通半导体科技有限公司 一种基于导电胶的双芯片传感器封装结构、方法及其器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1735973A (zh) * 2003-01-20 2006-02-15 夏普株式会社 用于光学传感器滤波器的透明树脂组合物、光学传感器及其制造方法
CN1770424A (zh) * 2004-11-05 2006-05-10 精工爱普生株式会社 基板的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3007800B2 (ja) * 1994-08-31 2000-02-07 シャープ株式会社 光半導体装置の製造方法
JP3261280B2 (ja) * 1994-09-08 2002-02-25 シャープ株式会社 反射型フォトインタラプタおよびその製造方法
JPH0983011A (ja) * 1995-09-18 1997-03-28 Sharp Corp 光半導体装置
JP3809969B2 (ja) * 1996-07-23 2006-08-16 シチズン電子株式会社 赤外線送受信モジュールの構造
JP2000205951A (ja) * 1999-01-18 2000-07-28 Seitai Hikari Joho Kenkyusho:Kk 光測定装置
JP2004022588A (ja) * 2002-06-12 2004-01-22 New Japan Radio Co Ltd 光半導体素子
JP2005317878A (ja) * 2004-04-30 2005-11-10 Citizen Electronics Co Ltd フォトリフレクタ装置及びその製造方法
JP5069996B2 (ja) * 2007-10-03 2012-11-07 シチズン電子株式会社 フォトリフレクタの製造方法
JP2010021301A (ja) * 2008-07-10 2010-01-28 Kaneka Corp 絶縁材料、ならびにプリント配線板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1735973A (zh) * 2003-01-20 2006-02-15 夏普株式会社 用于光学传感器滤波器的透明树脂组合物、光学传感器及其制造方法
CN1770424A (zh) * 2004-11-05 2006-05-10 精工爱普生株式会社 基板的制造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2004-22588A 2004.01.22
JP特开2005-317878A 2005.11.10
JP特开平9-83011A 1997.03.28

Also Published As

Publication number Publication date
CN102157510A (zh) 2011-08-17
WO2011098036A1 (zh) 2011-08-18
US20120305771A1 (en) 2012-12-06
JP2013519995A (ja) 2013-05-30
KR20120137359A (ko) 2012-12-20

Similar Documents

Publication Publication Date Title
CN102157510B (zh) 近接传感器封装结构及其制作方法
TWI388054B (zh) 近接感測器封裝結構及其製作方法
JP3172667U (ja) 光学モジュール
TWI476907B (zh) 接近感測器之封裝體及其封裝方法
CN103515372A (zh) 光感测式芯片封装结构
CN106653742B (zh) 邻近传感器、电子设备以及制造邻近传感器的方法
TW201734499A (zh) 適用於小孔徑之複合型光學感測器及其製法
CN108711566B (zh) 光学感测系统、光学感测组件及其制造方法
TW201036504A (en) Photoelectric transmitting or receiving device and manufacturing method thereof
TW201505135A (zh) 光學模組的封裝結構
TW201505134A (zh) 光學模組的封裝結構
CN205752171U (zh) 一种光学传感器封装结构
US11520074B2 (en) Proximity sensor with light blocking barrier comprising a gap having a cross-section with parallel walls between emitter and detector
CN113782523B (zh) 一种具有光学反射面的红外接近及环境光亮度传感器
CN212062438U (zh) 一种具有光学反射面的红外接近及环境光亮度传感器
CN205211751U (zh) 邻近传感器以及电子设备
TW201505131A (zh) 光學模組的封裝結構
CN107293558A (zh) 适用于小孔径的复合型光学感测器及其制法
WO2016043052A1 (ja) 光センサモジュール及びその製造方法
CN103811480A (zh) 具有感应装置的载板封装结构及制作方法
TWI451583B (zh) 整合式感測封裝結構
CN102969388A (zh) 整合式感测封装结构
CN112992698A (zh) 光学模块的制造方法
TWI761737B (zh) 光學模組的製造方法
TWI698786B (zh) 觸控顯示面板及其製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: China Taiwan New Taipei city forest region of the road 6 No. 8

Applicant after: Everlight Electronics Co.,Ltd.

Address before: 25, Lane 76, three section, Central Road, Tu County, Taiwan, Taipei, China

Applicant before: Everlight Electronics Co.,Ltd.

GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131106

Termination date: 20150212

EXPY Termination of patent right or utility model