JP2013519995A - 近接センサパッケージ構造及びその製造方法 - Google Patents

近接センサパッケージ構造及びその製造方法 Download PDF

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Publication number
JP2013519995A
JP2013519995A JP2012552248A JP2012552248A JP2013519995A JP 2013519995 A JP2013519995 A JP 2013519995A JP 2012552248 A JP2012552248 A JP 2012552248A JP 2012552248 A JP2012552248 A JP 2012552248A JP 2013519995 A JP2013519995 A JP 2013519995A
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Japan
Prior art keywords
substrate
groove
proximity sensor
package structure
conductive layer
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Pending
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JP2012552248A
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English (en)
Japanese (ja)
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JP2013519995A5 (enExample
Inventor
ライ、ル−ミン
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Everlight Electronics Co Ltd
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Everlight Electronics Co Ltd
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Publication date
Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Publication of JP2013519995A publication Critical patent/JP2013519995A/ja
Publication of JP2013519995A5 publication Critical patent/JP2013519995A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/04—Systems determining the presence of a target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
JP2012552248A 2010-02-12 2011-02-10 近接センサパッケージ構造及びその製造方法 Pending JP2013519995A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201010128176.7 2010-02-12
CN2010101281767A CN102157510B (zh) 2010-02-12 2010-02-12 近接传感器封装结构及其制作方法
PCT/CN2011/070904 WO2011098036A1 (zh) 2010-02-12 2011-02-10 近接传感器封装结构及其制作方法

Publications (2)

Publication Number Publication Date
JP2013519995A true JP2013519995A (ja) 2013-05-30
JP2013519995A5 JP2013519995A5 (enExample) 2013-10-10

Family

ID=44367280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012552248A Pending JP2013519995A (ja) 2010-02-12 2011-02-10 近接センサパッケージ構造及びその製造方法

Country Status (5)

Country Link
US (1) US20120305771A1 (enExample)
JP (1) JP2013519995A (enExample)
KR (1) KR20120137359A (enExample)
CN (1) CN102157510B (enExample)
WO (1) WO2011098036A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019145586A (ja) * 2018-02-16 2019-08-29 京セラ株式会社 受発光素子モジュールおよびセンサー装置
JP2020072119A (ja) * 2018-10-29 2020-05-07 京セラ株式会社 近接センサ用パッケージ、近接センサ装置および電子モジュール

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CN102969388A (zh) * 2011-09-02 2013-03-13 光宝新加坡有限公司 整合式感测封装结构
TWI458113B (zh) 2012-05-04 2014-10-21 台灣典範半導體股份有限公司 Proximity sensor and its manufacturing method
TWI512313B (zh) * 2012-11-09 2015-12-11 Upi Semiconductor Corp 接近感測器及其運作方法
TWI490521B (zh) * 2012-11-14 2015-07-01 原相科技股份有限公司 近接式光感測器及製作方法
CN105806376A (zh) * 2012-11-23 2016-07-27 原相科技股份有限公司 近接式光传感器及制作方法
CN103066087B (zh) * 2012-12-20 2016-03-02 格科微电子（上海）有限公司 图像传感器模组和手持式电子装置
US9018645B2 (en) * 2013-08-29 2015-04-28 Stmicroelectronics Pte Ltd Optoelectronics assembly and method of making optoelectronics assembly
CN104332524B (zh) * 2014-08-26 2018-01-09 日月光半导体制造股份有限公司 电子装置、光学模块及其制造方法
TWI587003B (zh) * 2014-10-15 2017-06-11 昇佳電子股份有限公司 內建光障元件之封裝結構、形成光學封裝結構之方法與所形成之光學封裝結構
US10672937B2 (en) * 2015-09-02 2020-06-02 Pixart Imaging Inc. Optical sensor module and sensor chip thereof
CN206602107U (zh) * 2016-11-23 2017-10-31 创智能科技股份有限公司 指纹感测辨识封装结构
CN110098180B (zh) * 2018-01-31 2023-10-20 光宝新加坡有限公司 晶圆级感应模块及其制造方法
WO2019171214A1 (en) * 2018-03-06 2019-09-12 3M Innovative Properties Company Automatic registration between circuit dies and interconnects
KR102068161B1 (ko) * 2018-03-14 2020-01-20 (주)파트론 광학 센서 패키지 및 그 제조 방법
CN109346534B (zh) * 2018-11-23 2024-05-07 中国电子科技集团公司第四十四研究所 一种陶瓷管壳结构及其封装结构
US20220302355A1 (en) * 2019-08-29 2022-09-22 Kyocera Corporation Mounting board and electronic device
IT201900022632A1 (it) 2019-12-02 2021-06-02 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
CN111935939B (zh) * 2020-09-03 2021-01-22 潍坊歌尔微电子有限公司 密封结构、密封方法、传感器和电子设备
KR102546105B1 (ko) * 2020-12-15 2023-06-21 (주)파트론 광학 센서 패키지
US11715753B2 (en) * 2020-12-30 2023-08-01 Applied Materials, Inc. Methods for integration of light emitting diodes and image sensors
CN114334885A (zh) * 2021-12-10 2022-04-12 苏州瞬通半导体科技有限公司 一种基于导电胶的双芯片传感器封装结构、方法及其器件

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JPH0878457A (ja) * 1994-08-31 1996-03-22 Sharp Corp 半導体装置の製造方法
JPH08130325A (ja) * 1994-09-08 1996-05-21 Sharp Corp 反射型フォトインタラプタおよびその製造方法
JPH0983011A (ja) * 1995-09-18 1997-03-28 Sharp Corp 光半導体装置
JPH1041539A (ja) * 1996-07-23 1998-02-13 Shichizun Denshi:Kk 赤外線送受信モジュールの構造
JP2000205951A (ja) * 1999-01-18 2000-07-28 Seitai Hikari Joho Kenkyusho:Kk 光測定装置
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JP2009088435A (ja) * 2007-10-03 2009-04-23 Citizen Electronics Co Ltd フォトリフレクタ及びその製造方法
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JPH0878457A (ja) * 1994-08-31 1996-03-22 Sharp Corp 半導体装置の製造方法
JPH08130325A (ja) * 1994-09-08 1996-05-21 Sharp Corp 反射型フォトインタラプタおよびその製造方法
JPH0983011A (ja) * 1995-09-18 1997-03-28 Sharp Corp 光半導体装置
JPH1041539A (ja) * 1996-07-23 1998-02-13 Shichizun Denshi:Kk 赤外線送受信モジュールの構造
JP2000205951A (ja) * 1999-01-18 2000-07-28 Seitai Hikari Joho Kenkyusho:Kk 光測定装置
JP2004022588A (ja) * 2002-06-12 2004-01-22 New Japan Radio Co Ltd 光半導体素子
JP2009088435A (ja) * 2007-10-03 2009-04-23 Citizen Electronics Co Ltd フォトリフレクタ及びその製造方法
JP2010021301A (ja) * 2008-07-10 2010-01-28 Kaneka Corp 絶縁材料、ならびにプリント配線板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019145586A (ja) * 2018-02-16 2019-08-29 京セラ株式会社 受発光素子モジュールおよびセンサー装置
JP2020072119A (ja) * 2018-10-29 2020-05-07 京セラ株式会社 近接センサ用パッケージ、近接センサ装置および電子モジュール
JP7072486B2 (ja) 2018-10-29 2022-05-20 京セラ株式会社 近接センサ用パッケージ、近接センサ装置および電子モジュール

Also Published As

Publication number Publication date
CN102157510B (zh) 2013-11-06
CN102157510A (zh) 2011-08-17
WO2011098036A1 (zh) 2011-08-18
US20120305771A1 (en) 2012-12-06
KR20120137359A (ko) 2012-12-20

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