CN102148226A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102148226A
CN102148226A CN2011100023315A CN201110002331A CN102148226A CN 102148226 A CN102148226 A CN 102148226A CN 2011100023315 A CN2011100023315 A CN 2011100023315A CN 201110002331 A CN201110002331 A CN 201110002331A CN 102148226 A CN102148226 A CN 102148226A
Authority
CN
China
Prior art keywords
region
drain
esd protection
mos transistor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011100023315A
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English (en)
Chinese (zh)
Inventor
鹰巢博昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN102148226A publication Critical patent/CN102148226A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2011100023315A 2010-01-06 2011-01-06 半导体装置 Pending CN102148226A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-001554 2010-01-06
JP2010001554A JP5511395B2 (ja) 2010-01-06 2010-01-06 半導体装置

Publications (1)

Publication Number Publication Date
CN102148226A true CN102148226A (zh) 2011-08-10

Family

ID=44224206

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100023315A Pending CN102148226A (zh) 2010-01-06 2011-01-06 半导体装置

Country Status (5)

Country Link
US (1) US20110163384A1 (https=)
JP (1) JP5511395B2 (https=)
KR (1) KR20110081078A (https=)
CN (1) CN102148226A (https=)
TW (1) TW201138053A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5546191B2 (ja) * 2009-09-25 2014-07-09 セイコーインスツル株式会社 半導体装置
JP2011071329A (ja) * 2009-09-25 2011-04-07 Seiko Instruments Inc 半導体装置
JP2013153019A (ja) * 2012-01-24 2013-08-08 Seiko Instruments Inc 半導体装置
JP2017092297A (ja) * 2015-11-12 2017-05-25 ソニー株式会社 電界効果トランジスタ、および半導体装置
WO2018190881A1 (en) * 2017-04-15 2018-10-18 Intel IP Corporation Multi-drain esd-robust transistor arrangements
JP7765268B2 (ja) * 2021-09-14 2025-11-06 キオクシア株式会社 半導体装置、保護回路、及び半導体装置の製造方法
US12336302B1 (en) * 2024-05-03 2025-06-17 Globalfoundries U.S. Inc. Vertical device triggered silicon control rectifier

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3564811B2 (ja) * 1995-07-24 2004-09-15 豊田合成株式会社 ３族窒化物半導体発光素子
KR100214855B1 (ko) * 1995-12-30 1999-08-02 김영환 정전기 방지용 트랜지스터 및 그의 제조방법
JPH1012746A (ja) * 1996-06-25 1998-01-16 Nec Corp 半導体装置
US6548874B1 (en) * 1999-10-27 2003-04-15 Texas Instruments Incorporated Higher voltage transistors for sub micron CMOS processes
US6310380B1 (en) * 2000-03-06 2001-10-30 Chartered Semiconductor Manufacturing, Inc. Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers
US7064399B2 (en) * 2000-09-15 2006-06-20 Texas Instruments Incorporated Advanced CMOS using super steep retrograde wells
TW522542B (en) * 2000-11-09 2003-03-01 United Microelectronics Corp Electrostatic discharge device structure
JP2002334990A (ja) * 2001-03-06 2002-11-22 Fuji Electric Co Ltd 半導体装置
KR100859486B1 (ko) * 2006-09-18 2008-09-24 동부일렉트로닉스 주식회사 고전압용 정전기 방전 보호 소자 및 그 제조 방법
KR100835282B1 (ko) * 2007-01-23 2008-06-05 삼성전자주식회사 정전기 방전 보호 장치
US7838940B2 (en) * 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor

Also Published As

Publication number Publication date
US20110163384A1 (en) 2011-07-07
JP2011142190A (ja) 2011-07-21
JP5511395B2 (ja) 2014-06-04
TW201138053A (en) 2011-11-01
KR20110081078A (ko) 2011-07-13

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C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20110810