CN102122115B - 生成光掩模及数据、固态图像传感器和微透镜阵列的方法 - Google Patents

生成光掩模及数据、固态图像传感器和微透镜阵列的方法 Download PDF

Info

Publication number
CN102122115B
CN102122115B CN2011100002107A CN201110000210A CN102122115B CN 102122115 B CN102122115 B CN 102122115B CN 2011100002107 A CN2011100002107 A CN 2011100002107A CN 201110000210 A CN201110000210 A CN 201110000210A CN 102122115 B CN102122115 B CN 102122115B
Authority
CN
China
Prior art keywords
photomask
light part
shading light
area
microlens array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2011100002107A
Other languages
English (en)
Chinese (zh)
Other versions
CN102122115A (zh
Inventor
栗原政树
渡边杏平
北村慎吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN102122115A publication Critical patent/CN102122115A/zh
Application granted granted Critical
Publication of CN102122115B publication Critical patent/CN102122115B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29DPRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00Producing optical elements, e.g. lenses or prisms
    • B29D11/00009Production of simple or compound lenses
    • B29D11/00278Lenticular sheets
    • B29D11/00298Producing lens arrays
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN2011100002107A 2010-01-07 2011-01-04 生成光掩模及数据、固态图像传感器和微透镜阵列的方法 Expired - Fee Related CN102122115B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010-002375 2010-01-07
JP2010002375 2010-01-07
JP2010-282401 2010-12-17
JP2010282401A JP5677076B2 (ja) 2010-01-07 2010-12-17 フォトマスクデータの生成方法、その作製方法、そのためのプログラム、固体撮像装置の製造方法、および、マイクロレンズアレイの製造方法

Publications (2)

Publication Number Publication Date
CN102122115A CN102122115A (zh) 2011-07-13
CN102122115B true CN102122115B (zh) 2013-03-27

Family

ID=44224899

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100002107A Expired - Fee Related CN102122115B (zh) 2010-01-07 2011-01-04 生成光掩模及数据、固态图像传感器和微透镜阵列的方法

Country Status (3)

Country Link
US (1) US8354206B2 (ja)
JP (1) JP5677076B2 (ja)
CN (1) CN102122115B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103365071B (zh) * 2012-04-09 2016-03-09 中芯国际集成电路制造(上海)有限公司 掩膜板的光学邻近校正方法
CN103345010A (zh) * 2013-07-11 2013-10-09 中国科学院光电技术研究所 一种基于聚二甲基硅氧烷模板的微透镜阵列元件制作方法
JP6409499B2 (ja) * 2014-10-24 2018-10-24 大日本印刷株式会社 パターンデータの作製方法およびフォトマスク
JP6409498B2 (ja) * 2014-10-24 2018-10-24 大日本印刷株式会社 パターンデータの作製方法
US20190206912A1 (en) * 2018-01-03 2019-07-04 Himax Technologies Limited Image sensor, micro-lens array, and method for fabricating micro-lens array with different heights in image sensor
WO2020108902A1 (en) 2018-11-30 2020-06-04 Asml Netherlands B.V. Method for determining patterning device pattern based on manufacturability

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1423168A (zh) * 1994-06-29 2003-06-11 株式会社日立制作所 光掩模及其制造方法
CN1574223A (zh) * 2003-06-24 2005-02-02 松下电器产业株式会社 光掩模、使用该光掩模的图案形成方法及该光掩模的掩模数据编制方法
CN1975568A (zh) * 2002-04-30 2007-06-06 松下电器产业株式会社 使用光罩的图案形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2988556B2 (ja) * 1992-09-24 1999-12-13 松下電子工業株式会社 マイクロレンズの製造方法および半導体装置の製造方法
JPH07318715A (ja) * 1994-05-30 1995-12-08 Toppan Printing Co Ltd カラーフィルターの製造方法
JP4249586B2 (ja) * 2002-09-30 2009-04-02 大日本印刷株式会社 マイクロレンズの形成方法
JP4489471B2 (ja) * 2004-03-15 2010-06-23 大日本印刷株式会社 マイクロレンズアレイの形成方法
JPWO2006028128A1 (ja) * 2004-09-09 2008-05-08 松下電器産業株式会社 固体撮像素子
JP2007193243A (ja) 2006-01-23 2007-08-02 Sony Corp 露光用マスク、露光方法、露光用マスクの製造方法、3次元デバイスおよび3次元デバイスの製造方法
JP4696927B2 (ja) * 2006-01-23 2011-06-08 凸版印刷株式会社 マイクロレンズアレイの製造方法
JP4936515B2 (ja) * 2006-05-18 2012-05-23 Hoya株式会社 フォトマスクの製造方法、およびハーフトーン型位相シフトマスクの製造方法
KR100831273B1 (ko) * 2006-09-12 2008-05-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 마이크로렌즈용 사진 마스크
JP4607944B2 (ja) * 2007-04-17 2011-01-05 キヤノン株式会社 マスクパターンデータの生成方法、情報処理装置、フォトマスク作製システム、及び、マイクロレンズアレイの製造方法
JP2009031400A (ja) * 2007-07-25 2009-02-12 Toppan Printing Co Ltd 濃度分布マスク
JP4941233B2 (ja) * 2007-10-31 2012-05-30 大日本印刷株式会社 固体撮像素子およびそれを用いた撮像装置
JP2012109541A (ja) * 2010-10-25 2012-06-07 Canon Inc 固体撮像装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1423168A (zh) * 1994-06-29 2003-06-11 株式会社日立制作所 光掩模及其制造方法
CN1975568A (zh) * 2002-04-30 2007-06-06 松下电器产业株式会社 使用光罩的图案形成方法
CN1574223A (zh) * 2003-06-24 2005-02-02 松下电器产业株式会社 光掩模、使用该光掩模的图案形成方法及该光掩模的掩模数据编制方法

Also Published As

Publication number Publication date
CN102122115A (zh) 2011-07-13
JP5677076B2 (ja) 2015-02-25
US20110165503A1 (en) 2011-07-07
US8354206B2 (en) 2013-01-15
JP2011158894A (ja) 2011-08-18

Similar Documents

Publication Publication Date Title
CN102122115B (zh) 生成光掩模及数据、固态图像传感器和微透镜阵列的方法
CN102375334B (zh) 微透镜阵列制造方法、固态图像传感器及其制造方法
US9274254B2 (en) Optical element array, photoelectric conversion apparatus, and image pickup system
CN110275606B (zh) 感测元件
US9349771B2 (en) Microlens forming method and solid-state image sensor manufacturing method
CN103365072B (zh) 用于生成掩模图案的方法
JP4489471B2 (ja) マイクロレンズアレイの形成方法
JP4515012B2 (ja) パターンデータの作製方法およびフォトマスク
CN110634899B (zh) 背照式图像传感器光电子隔离层网栅的辅助图形结构
JP5391701B2 (ja) 濃度分布マスクとその設計装置及び微小立体形状配列の製造方法
JP4249459B2 (ja) 撮像装置と撮像装置における屈折部の形成方法
CN114467176A (zh) 图像传感器、图像处理方法及装置、成像系统
CN105301677A (zh) 光掩模、光学元件阵列的制造方法、光学元件阵列
US20120100662A1 (en) Method of manufacturing solid-state image sensor
JP2006018256A (ja) レンズアレイ
JP2011053699A (ja) フォトマスクの製造方法
CN113067992A (zh) 一种图像传感器及其制作方法
JP5412892B2 (ja) レンズ形状の設計方法、レンズの形成方法、撮像素子、およびフォトマスクの設計方法
WO2020186512A1 (zh) 光电二极管的制备方法、光电二极管和cmos图像传感器
JP2009008885A (ja) 濃度分布マスク
JP6703387B2 (ja) 薄膜光センサ、2次元アレイセンサ、および指紋センサ付きモバイル用ディスプレイ
US20230296978A1 (en) Photomask, method for manufacturing lens, and method for manufacturing photodetector
JP5510053B2 (ja) リニアセンサ用カラーフィルタの製造方法
US8237238B2 (en) Image sensor
CN104035273A (zh) 双调显影用光掩模

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130327

Termination date: 20210104