CN102047184A - 一种等离子刻蚀残留物清洗液 - Google Patents

一种等离子刻蚀残留物清洗液 Download PDF

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Publication number
CN102047184A
CN102047184A CN2009801212635A CN200980121263A CN102047184A CN 102047184 A CN102047184 A CN 102047184A CN 2009801212635 A CN2009801212635 A CN 2009801212635A CN 200980121263 A CN200980121263 A CN 200980121263A CN 102047184 A CN102047184 A CN 102047184A
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plasma etching
washing liquid
ether
residual washing
etching residual
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CN102047184B (zh
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刘兵
彭洪修
于昊
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Anji microelectronic technology (Shanghai) Limited by Share Ltd
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Anji Microelectronics Shanghai Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

一种用于除去等离子蚀刻残留物的清洗液，其含有溶剂、水、氟化物、螯合剂、羟基叔胺和羟基伯胺。该清洗液具有较强的清洗能力，能够有效清除金属和半导体上的等离子蚀刻残留物。该清洗液适用于较宽的温度范围，并具有较大的操作窗口。该清洗液保持较低的金属铝和非金属TEOS腐蚀速率，并有效地降低了铜的腐蚀。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN200980121263.5A 2008-06-06 2009-06-03 一种等离子刻蚀残留物清洗液 Active CN102047184B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200980121263.5A CN102047184B (zh) 2008-06-06 2009-06-03 一种等离子刻蚀残留物清洗液

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CNA2008100386957A CN101597548A (zh) 2008-06-06 2008-06-06 一种等离子刻蚀残留物清洗液
CN200810038695.7 2008-06-06
PCT/CN2009/000623 WO2009146606A1 (zh) 2008-06-06 2009-06-03 一种等离子刻蚀残留物清洗液
CN200980121263.5A CN102047184B (zh) 2008-06-06 2009-06-03 一种等离子刻蚀残留物清洗液

Publications (2)

Publication Number Publication Date
CN102047184A true CN102047184A (zh) 2011-05-04
CN102047184B CN102047184B (zh) 2013-10-23

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CNA2008100386957A Pending CN101597548A (zh) 2008-06-06 2008-06-06 一种等离子刻蚀残留物清洗液
CN200980121263.5A Active CN102047184B (zh) 2008-06-06 2009-06-03 一种等离子刻蚀残留物清洗液

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CN (2) CN101597548A (zh)
WO (1) WO2009146606A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109976108A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种用于半导体的清洗液

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101114502B1 (ko) * 2010-06-28 2012-02-24 램테크놀러지 주식회사 세정용 조성물 및 이를 이용한 반도체 패턴의 형성방법
JP2013533631A (ja) * 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残渣を除去するための水性洗浄剤
CN102827708A (zh) * 2011-06-16 2012-12-19 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗液
CN102827707A (zh) * 2011-06-16 2012-12-19 安集微电子科技(上海)有限公司 一种等离子刻蚀残留物清洗液
CN103809394B (zh) * 2012-11-12 2019-12-31 安集微电子科技（上海）股份有限公司 一种去除光阻蚀刻残留物的清洗液
US9562211B2 (en) * 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
CN104946429A (zh) * 2014-03-26 2015-09-30 安集微电子科技(上海)有限公司 一种低蚀刻的去除光阻蚀刻残留物的清洗液
JP6231423B2 (ja) * 2014-04-09 2017-11-15 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
CN108121175B (zh) * 2016-11-29 2021-02-02 安集微电子科技（上海）股份有限公司 一种含氟清洗液
CN106637270A (zh) * 2016-12-27 2017-05-10 昆山欣谷微电子材料有限公司 干蚀刻清洗剥离防护液
IL277275B2 (en) 2018-03-28 2023-11-01 Fujifilm Electronic Mat Usa Inc cleaning products
CN112863999B (zh) * 2019-11-26 2023-10-27 中芯国际集成电路制造(上海)有限公司 刻蚀方法
CN113430069A (zh) * 2020-03-23 2021-09-24 上海新阳半导体材料股份有限公司 一种低羟胺水基清洗液、其制备方法及应用
CN112859554B (zh) * 2021-02-04 2023-11-10 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液的制备方法
CN112859553B (zh) * 2021-02-04 2023-11-10 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液
CN112859552B (zh) * 2021-02-04 2024-01-05 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液的应用
CN116218610B (zh) * 2021-12-06 2024-07-09 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液的制备方法
CN116218612B (zh) * 2021-12-06 2024-07-09 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液在清洗半导体器件中的应用
CN116218611B (zh) * 2021-12-06 2024-06-21 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液

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US5972862A (en) * 1996-08-09 1999-10-26 Mitsubishi Gas Chemical Cleaning liquid for semiconductor devices
CN1966636A (zh) * 2005-11-15 2007-05-23 安集微电子（上海）有限公司 清洗液组合物
CN101187787A (zh) * 2006-11-17 2008-05-28 安集微电子（上海）有限公司 低蚀刻性光刻胶清洗剂及其清洗方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109976108A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种用于半导体的清洗液

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CN102047184B (zh) 2013-10-23
WO2009146606A1 (zh) 2009-12-10
CN101597548A (zh) 2009-12-09

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Address after: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the

Patentee after: Anji microelectronic technology (Shanghai) Limited by Share Ltd

Address before: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the

Patentee before: Anji Microelectronics (Shanghai) Co., Ltd.