CN103809394A - 一种去除光阻蚀刻残留物的清洗液 - Google Patents
一种去除光阻蚀刻残留物的清洗液 Download PDFInfo
- Publication number
- CN103809394A CN103809394A CN201210451687.1A CN201210451687A CN103809394A CN 103809394 A CN103809394 A CN 103809394A CN 201210451687 A CN201210451687 A CN 201210451687A CN 103809394 A CN103809394 A CN 103809394A
- Authority
- CN
- China
- Prior art keywords
- acid
- cleaning fluid
- cleaning
- fluoride
- ether
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (16)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210451687.1A CN103809394B (zh) | 2012-11-12 | 2012-11-12 | 一种去除光阻蚀刻残留物的清洗液 |
PCT/CN2013/001335 WO2014071688A1 (zh) | 2012-11-12 | 2013-11-05 | 一种去除光阻蚀刻残留物的清洗液 |
TW102140637A TW201418452A (zh) | 2012-11-12 | 2013-11-08 | 一種去除光阻蝕刻殘留物的清洗液 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210451687.1A CN103809394B (zh) | 2012-11-12 | 2012-11-12 | 一种去除光阻蚀刻残留物的清洗液 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103809394A true CN103809394A (zh) | 2014-05-21 |
CN103809394B CN103809394B (zh) | 2019-12-31 |
Family
ID=50683987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210451687.1A Active CN103809394B (zh) | 2012-11-12 | 2012-11-12 | 一种去除光阻蚀刻残留物的清洗液 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN103809394B (zh) |
TW (1) | TW201418452A (zh) |
WO (1) | WO2014071688A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107589637A (zh) * | 2017-08-29 | 2018-01-16 | 昆山艾森半导体材料有限公司 | 一种含氟铝线清洗液 |
CN112592775A (zh) * | 2020-12-07 | 2021-04-02 | 湖北兴福电子材料有限公司 | 一种控挡片清洗液及清洗方法 |
CN112859552A (zh) * | 2021-02-04 | 2021-05-28 | 上海新阳半导体材料股份有限公司 | 一种氧化钒缓蚀含氟剥离液、其制备方法及应用 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108321085B (zh) * | 2017-01-17 | 2021-04-23 | 中芯国际集成电路制造(上海)有限公司 | 一种聚酰亚胺层的去除方法及半导体器件的制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5968848A (en) * | 1996-12-27 | 1999-10-19 | Tokyo Ohka Kogyo Co., Ltd. | Process for treating a lithographic substrate and a rinse solution for the treatment |
CN1659480A (zh) * | 2002-06-07 | 2005-08-24 | 马林克罗特贝克公司 | 用于微电子基底的清洁组合物 |
CN1875325A (zh) * | 2003-10-29 | 2006-12-06 | 马林克罗特贝克公司 | 含有金属卤化物腐蚀抑制剂的碱性后等离子体蚀刻/灰化残余物去除剂和光致抗蚀剂剥离组合物 |
CN1954267A (zh) * | 2004-02-11 | 2007-04-25 | 马林克罗特贝克公司 | 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物 |
CN101597548A (zh) * | 2008-06-06 | 2009-12-09 | 安集微电子科技(上海)有限公司 | 一种等离子刻蚀残留物清洗液 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
AU2002338176A1 (en) * | 2002-10-11 | 2004-05-04 | Wako Pure Chemical Industries, Ltd. | Substrate detergent |
JP4538286B2 (ja) * | 2004-09-14 | 2010-09-08 | トヨタ自動車株式会社 | 金型洗浄方法 |
CN101412948B (zh) * | 2007-10-19 | 2012-05-16 | 安集微电子(上海)有限公司 | 一种等离子刻蚀残留物清洗剂 |
CN101226346B (zh) * | 2007-12-27 | 2010-06-09 | 周伟 | 光致抗蚀剂的脱膜工艺及在该工艺中使用的第一组合物、第二组合物和脱膜剂水溶液 |
CN101957563B (zh) * | 2009-07-13 | 2014-09-24 | 安集微电子(上海)有限公司 | 一种含氟等离子刻蚀残留物清洗液 |
CN102703916A (zh) * | 2012-05-14 | 2012-10-03 | 晶澳太阳能有限公司 | 一种用于晶体硅太阳能电池的硅片碱制绒后清洗的清洗液 |
-
2012
- 2012-11-12 CN CN201210451687.1A patent/CN103809394B/zh active Active
-
2013
- 2013-11-05 WO PCT/CN2013/001335 patent/WO2014071688A1/zh active Application Filing
- 2013-11-08 TW TW102140637A patent/TW201418452A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5968848A (en) * | 1996-12-27 | 1999-10-19 | Tokyo Ohka Kogyo Co., Ltd. | Process for treating a lithographic substrate and a rinse solution for the treatment |
CN1659480A (zh) * | 2002-06-07 | 2005-08-24 | 马林克罗特贝克公司 | 用于微电子基底的清洁组合物 |
CN1875325A (zh) * | 2003-10-29 | 2006-12-06 | 马林克罗特贝克公司 | 含有金属卤化物腐蚀抑制剂的碱性后等离子体蚀刻/灰化残余物去除剂和光致抗蚀剂剥离组合物 |
CN1954267A (zh) * | 2004-02-11 | 2007-04-25 | 马林克罗特贝克公司 | 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物 |
CN101597548A (zh) * | 2008-06-06 | 2009-12-09 | 安集微电子科技(上海)有限公司 | 一种等离子刻蚀残留物清洗液 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107589637A (zh) * | 2017-08-29 | 2018-01-16 | 昆山艾森半导体材料有限公司 | 一种含氟铝线清洗液 |
CN112592775A (zh) * | 2020-12-07 | 2021-04-02 | 湖北兴福电子材料有限公司 | 一种控挡片清洗液及清洗方法 |
CN112592775B (zh) * | 2020-12-07 | 2021-10-12 | 湖北兴福电子材料有限公司 | 一种控挡片清洗液及清洗方法 |
CN112859552A (zh) * | 2021-02-04 | 2021-05-28 | 上海新阳半导体材料股份有限公司 | 一种氧化钒缓蚀含氟剥离液、其制备方法及应用 |
CN112859552B (zh) * | 2021-02-04 | 2024-01-05 | 上海新阳半导体材料股份有限公司 | 一种氧化钒缓蚀含氟剥离液的应用 |
Also Published As
Publication number | Publication date |
---|---|
TW201418452A (zh) | 2014-05-16 |
CN103809394B (zh) | 2019-12-31 |
WO2014071688A1 (zh) | 2014-05-15 |
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Address after: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Applicant after: Anji microelectronic technology (Shanghai) Limited by Share Ltd Address before: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Applicant before: Anji Microelectronics (Shanghai) Co., Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20211208 Address after: 315800 No. 79, Qingshan Road, Chaiqiao street, Beilun District, Ningbo City, Zhejiang Province Patentee after: Ningbo Anji Microelectronics Technology Co.,Ltd. Address before: 201201 T6-9, Jinqiao Export Processing Zone (South District), No. 5001 East China Road, Shanghai, Pudong New Area Patentee before: ANJI MICROELECTRONICS TECHNOLOGY (SHANGHAI) Co.,Ltd. |
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