CN102046838A - 用于膜沉积的碲前体 - Google Patents

用于膜沉积的碲前体 Download PDF

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Publication number
CN102046838A
CN102046838A CN200980119838XA CN200980119838A CN102046838A CN 102046838 A CN102046838 A CN 102046838A CN 200980119838X A CN200980119838X A CN 200980119838XA CN 200980119838 A CN200980119838 A CN 200980119838A CN 102046838 A CN102046838 A CN 102046838A
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CN
China
Prior art keywords
tellurium
precursor
sime
geme
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200980119838XA
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English (en)
Chinese (zh)
Inventor
大窪清吾
柳田和孝
J·伽蒂诺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Publication of CN102046838A publication Critical patent/CN102046838A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
CN200980119838XA 2008-05-29 2009-05-29 用于膜沉积的碲前体 Pending CN102046838A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US5712808P 2008-05-29 2008-05-29
US61/057,128 2008-05-29
PCT/IB2009/008067 WO2010055423A2 (en) 2008-05-29 2009-05-29 Tellurium precursors for film deposition
US12/475,204 US8101237B2 (en) 2008-05-29 2009-05-29 Tellurium precursors for film deposition
US12/475,204 2009-05-29

Publications (1)

Publication Number Publication Date
CN102046838A true CN102046838A (zh) 2011-05-04

Family

ID=41380625

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980119838XA Pending CN102046838A (zh) 2008-05-29 2009-05-29 用于膜沉积的碲前体

Country Status (6)

Country Link
US (1) US8101237B2 (https=)
JP (1) JP2011522120A (https=)
KR (1) KR20110014160A (https=)
CN (1) CN102046838A (https=)
TW (1) TWI480411B (https=)
WO (1) WO2010055423A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112789367A (zh) * 2018-10-04 2021-05-11 株式会社Adeka 用于原子层沉积法的薄膜形成用原料、薄膜形成用原料、薄膜的制造方法及化合物
CN115216748A (zh) * 2022-09-19 2022-10-21 中国科学院苏州纳米技术与纳米仿生研究所 碲薄膜的制备方法和半导体器件

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SG171683A1 (en) 2006-05-12 2011-06-29 Advanced Tech Materials Low temperature deposition of phase change memory materials
CN102352488B (zh) 2006-11-02 2016-04-06 诚实公司 对于金属薄膜的cvd/ald有用的锑及锗复合物
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SG178736A1 (en) * 2007-10-31 2012-03-29 Advanced Tech Materials Amorphous ge/te deposition process
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US8101237B2 (en) 2008-05-29 2012-01-24 L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
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KR102326396B1 (ko) 2013-09-27 2021-11-12 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 아민 치환된 트리실릴아민 및 트리디실릴아민 화합물
US9543144B2 (en) * 2014-12-31 2017-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Vapor deposition of chalcogenide-containing films
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
TWI889746B (zh) * 2020-02-20 2025-07-11 美商應用材料股份有限公司 含碲薄膜之沉積
KR102444266B1 (ko) * 2020-05-18 2022-09-16 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 적용한 상변화 물질층의 형성 방법 및 상변화 메모리 소자의 제조 방법
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KR102444272B1 (ko) * 2020-05-18 2022-09-16 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112789367A (zh) * 2018-10-04 2021-05-11 株式会社Adeka 用于原子层沉积法的薄膜形成用原料、薄膜形成用原料、薄膜的制造方法及化合物
CN115216748A (zh) * 2022-09-19 2022-10-21 中国科学院苏州纳米技术与纳米仿生研究所 碲薄膜的制备方法和半导体器件

Also Published As

Publication number Publication date
JP2011522120A (ja) 2011-07-28
WO2010055423A3 (en) 2010-07-15
WO2010055423A2 (en) 2010-05-20
TWI480411B (zh) 2015-04-11
KR20110014160A (ko) 2011-02-10
US8101237B2 (en) 2012-01-24
TW201016877A (en) 2010-05-01
US20090299084A1 (en) 2009-12-03
WO2010055423A8 (en) 2010-09-02

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