KR20110014160A - 필름 증착을 위한 텔루륨 전구체 - Google Patents

필름 증착을 위한 텔루륨 전구체 Download PDF

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KR20110014160A
KR20110014160A KR1020107026546A KR20107026546A KR20110014160A KR 20110014160 A KR20110014160 A KR 20110014160A KR 1020107026546 A KR1020107026546 A KR 1020107026546A KR 20107026546 A KR20107026546 A KR 20107026546A KR 20110014160 A KR20110014160 A KR 20110014160A
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precursor
tellurium
reactor
sime
geme
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신고 오꾸보
가즈따까 야나기따
줄리앙 가띠노
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레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
KR1020107026546A 2008-05-29 2009-05-29 필름 증착을 위한 텔루륨 전구체 Ceased KR20110014160A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US5712808P 2008-05-29 2008-05-29
US61/057,128 2008-05-29
US12/475,204 US8101237B2 (en) 2008-05-29 2009-05-29 Tellurium precursors for film deposition
US12/475,204 2009-05-29

Publications (1)

Publication Number Publication Date
KR20110014160A true KR20110014160A (ko) 2011-02-10

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KR1020107026546A Ceased KR20110014160A (ko) 2008-05-29 2009-05-29 필름 증착을 위한 텔루륨 전구체

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Country Link
US (1) US8101237B2 (https=)
JP (1) JP2011522120A (https=)
KR (1) KR20110014160A (https=)
CN (1) CN102046838A (https=)
TW (1) TWI480411B (https=)
WO (1) WO2010055423A2 (https=)

Cited By (3)

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KR20210142320A (ko) * 2020-05-18 2021-11-25 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 적용한 상변화 물질층의 형성 방법 및 상변화 메모리 소자의 제조 방법
KR20210142321A (ko) * 2020-05-18 2021-11-25 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법
US12356873B2 (en) 2020-05-18 2025-07-08 Seoul National University R&DBFoundation Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same

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RU2440640C1 (ru) * 2010-11-10 2012-01-20 Государственное образовательное учреждение высшего профессионального образования Дагестанский государственный университет Способ получения монокристаллических пленок и слоев теллура
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US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
TWI848976B (zh) * 2018-10-04 2024-07-21 日商Ａｄｅｋａ股份有限公司 原子層堆積法用薄膜形成用原料、薄膜形成用原料、薄膜之製造方法及化合物
TWI889746B (zh) * 2020-02-20 2025-07-11 美商應用材料股份有限公司 含碲薄膜之沉積
CN115216748B (zh) * 2022-09-19 2022-12-30 中国科学院苏州纳米技术与纳米仿生研究所 碲薄膜的制备方法和半导体器件

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KR20210142321A (ko) * 2020-05-18 2021-11-25 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법
KR20220130061A (ko) * 2020-05-18 2022-09-26 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 적용한 상변화 물질층의 형성 방법 및 상변화 메모리 소자의 제조 방법
KR20220130638A (ko) * 2020-05-18 2022-09-27 서울대학교산학협력단 원자층 증착 공정을 이용한 칼코게나이드계 박막의 형성 방법, 이를 이용한 스위칭 소자의 형성 방법 및 메모리 소자의 제조 방법
US12356873B2 (en) 2020-05-18 2025-07-08 Seoul National University R&DBFoundation Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same

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CN102046838A (zh) 2011-05-04
US8101237B2 (en) 2012-01-24
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US20090299084A1 (en) 2009-12-03
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