CN102017144B - 多电压静电放电保护 - Google Patents

多电压静电放电保护 Download PDF

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Publication number
CN102017144B
CN102017144B CN2009801157727A CN200980115772A CN102017144B CN 102017144 B CN102017144 B CN 102017144B CN 2009801157727 A CN2009801157727 A CN 2009801157727A CN 200980115772 A CN200980115772 A CN 200980115772A CN 102017144 B CN102017144 B CN 102017144B
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China
Prior art keywords
static discharge
source electrode
oxide
transistorized
control transistors
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CN2009801157727A
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Chinese (zh)
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CN102017144A (zh
Inventor
詹姆斯·D·惠特菲尔德
蔡·伊安·吉尔
阿比亚特·戈亚尔
詹柔英
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN102017144A publication Critical patent/CN102017144A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2009801157727A 2008-04-30 2009-02-20 多电压静电放电保护 Active CN102017144B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/112,209 US8279566B2 (en) 2008-04-30 2008-04-30 Multi-voltage electrostatic discharge protection
US12/112,209 2008-04-30
PCT/US2009/034669 WO2009134515A1 (en) 2008-04-30 2009-02-20 Multi-voltage electrostatic discharge protection

Publications (2)

Publication Number Publication Date
CN102017144A CN102017144A (zh) 2011-04-13
CN102017144B true CN102017144B (zh) 2012-11-21

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Family Applications (1)

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CN2009801157727A Active CN102017144B (zh) 2008-04-30 2009-02-20 多电压静电放电保护

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US (2) US8279566B2 (enExample)
JP (1) JP5550635B2 (enExample)
CN (1) CN102017144B (enExample)
TW (1) TWI460847B (enExample)
WO (1) WO2009134515A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692164B (zh) 2017-10-19 2020-04-21 大陸商萬民半導體（澳門）有限公司 低電容瞬變電壓抑制器

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8693148B2 (en) * 2009-01-08 2014-04-08 Micron Technology, Inc. Over-limit electrical condition protection circuits for integrated circuits
TWI399844B (zh) * 2009-11-24 2013-06-21 新唐科技股份有限公司 晶片及其靜電放電保護元件
US8982516B2 (en) 2010-11-12 2015-03-17 Freescale Semiconductor, Inc. Area-efficient high voltage bipolar-based ESD protection targeting narrow design windows
US8390092B2 (en) 2010-11-12 2013-03-05 Freescale Semiconductor, Inc. Area-efficient high voltage bipolar-based ESD protection targeting narrow design windows
JP2012142502A (ja) * 2011-01-05 2012-07-26 Sony Corp 保護素子及び保護素子を備えた半導体装置
US8547169B2 (en) * 2011-05-10 2013-10-01 Qualcomm Incorporated Programmable noise filtering for bias kickback disturbances
US8611058B2 (en) 2011-08-23 2013-12-17 Micron Technology, Inc. Combination ESD protection circuits and methods
US8724268B2 (en) 2011-08-30 2014-05-13 Micron Technology, Inc. Over-limit electrical condition protection circuits and methods
CN103891254A (zh) * 2011-10-21 2014-06-25 飞思卡尔半导体公司 集成电路器件、控域网驱动模块及其方法
KR101350461B1 (ko) 2012-04-03 2014-01-09 주식회사 하이딥 튜너블 커패시터
CN104143820A (zh) * 2013-05-08 2014-11-12 博通集成电路（上海）有限公司 静电放电保护电路及方法
US9330961B2 (en) 2013-09-23 2016-05-03 Freescale Semiconductor, Inc. Stacked protection devices and related fabrication methods
TWI501498B (zh) * 2013-10-04 2015-09-21 Silicon Motion Inc 靜電放電保護電路及其靜電保護方法
US9225163B2 (en) * 2013-11-01 2015-12-29 Infineon Technologies Ag Combined ESD active clamp for cascaded voltage pins
US9299669B2 (en) * 2014-01-23 2016-03-29 Amlogic Co., Ltd. Electrostatic discharge device gate biasing for a transmitter
US9780558B2 (en) 2014-12-11 2017-10-03 Nxp Usa, Inc. Semiconductor device and related protection methods
US9620496B2 (en) 2015-03-10 2017-04-11 Nxp Usa, Inc. Stacked protection devices with overshoot protection and related fabrication methods
US9893050B2 (en) 2015-06-30 2018-02-13 Nxp Usa, Inc. ESD protection structure
US10263577B2 (en) * 2016-12-09 2019-04-16 Advanced Energy Industries, Inc. Gate drive circuit and method of operating the same
JP2018120955A (ja) * 2017-01-25 2018-08-02 ルネサスエレクトロニクス株式会社 半導体装置
US10193338B2 (en) * 2017-05-05 2019-01-29 Synaptics Incorporated Voltage triggered edge insensitive protection circuit
US11088540B2 (en) * 2018-10-30 2021-08-10 Semiconductor Components Industries, Llc Switch circuit with high voltage protection that reduces leakage currents

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0435047A3 (en) * 1989-12-19 1992-07-15 National Semiconductor Corporation Electrostatic discharge protection for integrated circuits
US5086365A (en) * 1990-05-08 1992-02-04 Integrated Device Technology, Inc. Electostatic discharge protection circuit
JPH05275624A (ja) * 1992-03-25 1993-10-22 Sony Corp 半導体保護回路
JP3471906B2 (ja) * 1994-08-05 2003-12-02 川崎マイクロエレクトロニクス株式会社 半導体装置
US5841814A (en) * 1995-10-17 1998-11-24 Paradyne Corporation Sampling system for radio frequency receiver
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
US6160434A (en) * 1998-05-14 2000-12-12 Mitsubishi Denki Kabushiki Kaisha Ninety-degree phase shifter
US6459553B1 (en) * 1999-03-19 2002-10-01 Ati International Srl Single gate oxide electrostatic discharge protection circuit
JP2001339044A (ja) * 2000-05-26 2001-12-07 Mitsumi Electric Co Ltd 半導体装置の静電保護回路
US6621675B2 (en) * 2001-02-02 2003-09-16 Broadcom Corporation High bandwidth, high PSRR, low dropout voltage regulator
JP3678156B2 (ja) * 2001-03-01 2005-08-03 株式会社デンソー 静電気保護回路
US6747857B1 (en) * 2002-02-01 2004-06-08 Taiwan Semiconductor Manufacturing Company Clamping circuit for stacked NMOS ESD protection
US6844597B2 (en) * 2003-02-10 2005-01-18 Freescale Semiconductor, Inc. Low voltage NMOS-based electrostatic discharge clamp
JP2005260039A (ja) 2004-03-12 2005-09-22 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US7221551B2 (en) * 2004-06-11 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Cascaded gate-driven ESD clamp
US7027278B1 (en) * 2004-07-22 2006-04-11 National Semiconductor Corporation Stacked high-voltage ESD protection clamp with triggering voltage circuit control
FR2875335B1 (fr) * 2004-09-15 2007-03-02 Atmel Nantes Sa Sa Circuit electronique a double alimentation et a moyens de protection contre les claquages, et moyens de protection correspondants
JP4617231B2 (ja) * 2005-09-16 2011-01-19 太陽誘電株式会社 ランプ駆動装置
US7626243B2 (en) * 2006-08-04 2009-12-01 Advanced Analogic Technologies, Inc. ESD protection for bipolar-CMOS-DMOS integrated circuit devices
JP4641021B2 (ja) * 2006-11-16 2011-03-02 株式会社日立メディアエレクトロニクス マルチバンド無線機及び半導体集積回路
US7804669B2 (en) * 2007-04-19 2010-09-28 Qualcomm Incorporated Stacked ESD protection circuit having reduced trigger voltage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692164B (zh) 2017-10-19 2020-04-21 大陸商萬民半導體（澳門）有限公司 低電容瞬變電壓抑制器

Also Published As

Publication number Publication date
JP5550635B2 (ja) 2014-07-16
CN102017144A (zh) 2011-04-13
US20130010394A1 (en) 2013-01-10
US20090273867A1 (en) 2009-11-05
JP2011519488A (ja) 2011-07-07
US8432654B2 (en) 2013-04-30
TWI460847B (zh) 2014-11-11
WO2009134515A1 (en) 2009-11-05
US8279566B2 (en) 2012-10-02
TW200945554A (en) 2009-11-01

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Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.