CN102016387A - 具有led管芯的发光体及其制造 - Google Patents

具有led管芯的发光体及其制造 Download PDF

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CN102016387A
CN102016387A CN2008801217776A CN200880121777A CN102016387A CN 102016387 A CN102016387 A CN 102016387A CN 2008801217776 A CN2008801217776 A CN 2008801217776A CN 200880121777 A CN200880121777 A CN 200880121777A CN 102016387 A CN102016387 A CN 102016387A
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moulded parts
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A·梅尔-里克特
E·福尔廷
M·罗佩尔
P·希布利
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Abstract

本发明涉及由具有凹陷(5)的透明塑料模制件(1)制成的发光体及其制造,电子元件、特别是LED管芯(2)处于所述凹陷中。

Description

具有LED管芯的发光体及其制造
技术领域
本发明涉及由具有凹陷的透明塑料模制件制成的发光体以及其制造,电子元件、特别是LED管芯(LED-DIE)处于该凹陷内。
背景技术
作为对例如白炽灯或者节能灯的传统光源和模块的替代方案,考虑耐用性和能效。
白炽灯由于其在发光方面效率差和高散热以及使用寿命短而存在缺点。在澳大利亚今后几年将通过法律使白炽灯完全退出市场并由其他方案取代。
节能灯的能效明显更高,但节能灯由于重金属部分、特别是水银而是一种环境污染并必须作为特殊垃圾被清除。
没有这些缺点并且此外具有高使用寿命长和高能效的一种可替代的光源是LED。
LED作为光源例如在汽车工业、航空、室内照明、立面设计等方面得到广泛应用。
目前尝试将LED设立为传统光源的1∶1替代方案。由此在更大功率和更高亮度的方向上加速LED开发。这些高功率要求和在此出现的点状散热对于所使用的材料来说是一种很大的挑战。LED管芯的发光通常处于15-20%的范围内,这有必要使用透镜系统。这目前通过作为部件直接一体化到LED中的初级光学系统或者作为透镜或者透镜系统事后与LED组合的次级光学系统来实现。
LED被应用在印制电路板上。热量通过一体化的或者事后安装的系统排出。装备LED的印制电路板一般情况下可以通过塑料外壳来防潮和防污染。该塑料外壳在LED射线的出射区域中是透明的并且必要时被构造为透镜体。
在微电子学中,支承元件——如印制电路板或者导电薄膜——装备有半导体芯片(所谓的“管芯”)。
长期以来公知和使用包括具有平面支承面的支承元件的组件,在支承面上布置LED管芯或其他电子元件。这种布置导致在支承面与布置在其上的元件上侧之间形成台阶。在实践中表明,这种组件难以操作。特别是用于制造电子元件与相邻部件(例如印制导线)的电接触的布置是不利的。此外,将元件精准地放置在支承面上——例如利用所谓的“Pick and Place(拾取和放置)”方法——是困难的和/或只能利用昂贵和复杂的装置进行。
发明内容
因此本发明的任务在于,避免上述缺点,特别是提供具有电子元件的发光体,这些电子元件可以简单操作、具有良好的发光特性并且可以不复杂地制造,特别是能够以简单的方式使电子元件(LED管芯)精准地定位在支承元件上。此外,可以简单地实施电接触的产生。
该任务通过根据本发明的发光体来解决。
根据本发明的方法表示更加经济和更加高效地将LED发光元件一体化到部件中并由此实现小的结构空间深度的一种新的可能性。
本发明的主题是由具有LED管芯(2)的透明塑料模制件(1)制成的发光体,其特征在于,凹陷(5)处于模制件中,在凹陷中分别布置一个LED管芯或者透明的LED单元,使得LED管芯或者透明的LED单元的一侧几乎与模制件的上侧平齐,并且LED管芯通过处于模制件上的电导线(3)与电源连接。
根据本发明的发光体的优点是其——如果希望的话——小的结构空间深度,这对平面应用是有利的。此外,尤其是通过优选的喷铸法在造型方面获得高自由度,其中利用所述的喷铸法来制造塑料模制件。
将电子元件(LED管芯)放入模制件的凹陷中具有各种优点。这样电子元件(LED管芯)可以精准地在塑料模制件上定位。此外,LED管芯的凹进布置导致模制件上侧与LED管芯的上侧或自由表面之间高度平衡。
凹陷可以被设计为使得LED管芯的上侧几乎与模制件上侧平齐。该布置所具有的优点是,可以以有利的方式来产生LED管芯与其他LED管芯和/或电导线(3)的电接触。塑料模制件的凹陷优选通过喷铸法来提供并且具有底部和将该底部与模制件上侧相连接的侧壁。在要实现的尺寸的情况下,切削加工法达到其性能极限。喷铸法允许可复现地和经济地生产大批量制造的塑料模制件。
塑料模制件优选地由透明塑料制成,所述透明塑料例如聚碳酸酯(PC)、聚苯乙烯(PS)和聚甲基丙烯酸甲酯(PMMA)、聚砜、耐高温PC(Bayer MaterialScience AG的Apec)、环烯共聚物(COC)(Ticona的Topas
Figure BPA00001216433900032
)。对于透明的无色材料来说,透光率至少为80%,优选地至少为85%,特别优选地至少为89%(在1mm的样本体厚度的情况下按照ISO 13468-2测量)。塑料应具有非常好的流动特性、耐热性和对LED射线的良好阻力、机械稳定性以及高折射率。该方法为光按照不同方式从塑料模制件发射的应用开辟了解决可能性。
优选地将LED管芯插入到凹陷中,使得发射的光通过凹陷的底部辐射。这也具有的优点是,LED管芯可以简单地与处于模制件上侧的凹陷敞开侧上的电印制导线接触。
可以在敞开凹陷的那侧上优选地用塑料保护薄膜、优选聚碳酸酯薄膜来覆盖塑料模制件。这种薄膜可以有利地额外具有反射层。
在LED管芯被插入到凹陷中使得光在凹陷的敞开面上辐射的情况下,LED管芯的两个极通过凹陷底部中的点状开口(例如可以通过激光在凹陷的底部中产生)贯穿接触。在此,印制导线处于塑料模制件的与凹陷敞开侧相对的那侧上。优选地,可以在凹陷的敞开侧上用透明塑料保护薄膜、优选由聚碳酸酯制成的透明塑料保护薄膜来覆盖塑料模制件以保护LED管芯。
特别有利的是在放入LED管芯之前被施加在塑料模制件上的附加的反射层。
也可以将LED管芯插入到凹陷中使得光通过凹陷的底部辐射。那样的话,LED管芯的两个极优选地在凹陷的敞开侧上与印制导线接触。
在不使用“Flip-Chip-LED(倒装芯片LED)”(极都位于一侧)的情况下,优选地有一个极在凹陷的敞开侧上与印制导线接触并且还有一个极在相对侧上(通过凹陷的底部)与印制导线接触。
用于将LED管芯与电源电连接的印制导线按照常规可以由铜线或银线或金线制成。但是优选使用导电聚合物、优选是透明的导电聚合物。导电聚合物优选从如下组中选择:聚吡咯、聚苯胺,聚噻吩,聚苯乙炔,聚对苯撑,聚乙烯二甲氧噻吩,聚芴,聚乙炔,特别优选聚乙烯二甲氧噻吩与聚苯乙烯磺酸盐(例如H.C.Starck的Baytron
Figure BPA00001216433900033
)相组合。
也可以使用基于纳米微粒(纳米银、纳米金)的导电墨水。通过使用注入有纳米范围内的金属微粒的墨水,例如可以利用喷墨技术在塑料上印刷具有实际上任意几何结构的窄的导电导线。在此特别值得期望的是,这种印制导线的线宽达到或低于约20μm。从这一极限起,结构一般对于人眼来说不再能够分辨并且由于印制导线消除干扰的光学作用。
此外,也可以将含有CNT的墨水(CNT-碳纳米管,例如Bayer MaterialScience股份公司的Baytubes
Figure BPA00001216433900041
)用于印制导线。
同样可以将铟锡氧化物作为导电材料使用。
LED管芯与印制导线之间的电连接例如可以利用“Wire Bonding(引线焊接)”方法来产生。
塑料模制件可以具有大量微空穴形式的凹陷(“容纳槽”)。
凹陷的侧壁可以被构造为直的、凹的或者凸的。具有直线走向的侧壁所的优点是,这些侧壁特别适合于高精度地容纳LED管芯。
侧壁的走向可以与底部或与模制件上侧垂直。
可替换地,侧壁可以关于模制件上侧倾斜处于1°至89°之间的倾斜角。
特别有利的是,凹陷的侧壁向底部变窄并且分别限定5°-85°,优选20°-70°并且特别优选地约45°的倾斜角。
凹陷可以根据LED管芯的涉及在俯视图中具有矩形、圆形或者多边形的轮廓。
凹陷(容纳槽)可以在截面中具有阶梯状的配置,该配置形成至少一个与底部或与模制件上侧平行的阶梯底部段。
LED管芯可以通过填料固定在凹陷中。所述填料可以由树脂,例如环氧树脂、2K聚氨酯铸模树脂(Bayer MaterialScience股份公司的Baygal、Baymidur
Figure BPA00001216433900043
)组成。该粘结剂可以优选是透明的。在需要时,该胶粘剂也可以含有发荧光的颜料(所谓的荧光体)。
发光体的制造优选按照如下方式进行:
a)将热塑性塑料通过喷铸放入到模具中。模具具有要生成的塑料模制件的阴模。在冷却后,将具有凹陷的透明塑料模制件从模具中取出。凹陷的边长处于50-4000μm的范围内。凹陷的高度特别优选地处于50-200μm之间。凹陷的尺寸与LED管芯的尺寸相配合,LED管芯优选具有40-3800μm范围内的边长。
b)优选通过丝网印刷或者喷墨技术将印制导线施加到模制件上。
c)在下一步骤中,将LED管芯放入或者粘贴到凹陷中。在使用所谓的“Flip-Chip-LED(倒装芯片LED)”的情况下,极都处于一侧,从而LED管芯可以在一侧上与印制导线接触。优选地,LED管芯的极处于凹陷的敞开侧上并且在该侧上与印制导线接触。
d)最后,可以将优选地配备有反射层的塑料薄膜作为保护层在凹陷的敞开侧上施加到装备有LED管芯的模制件上。
e)发光体通过插塞式连接与电源连接。
在LED管芯被放入到凹陷中使得所述极穿过凹陷的底部的情况下,该方法优选如下实施:
a′)将热塑性塑料通过喷铸放入到模具中。模具具有要生成的塑料模制件的阴模。在冷却之后,将具有凹陷的透明塑料模制件从模具中取出。凹陷的尺寸处于50-4000μm的范围内。
b′)必要时,经过喷铸的模制件可以在凹陷的敞开侧上配备有反射层,优选通过丝网印刷来配备该反射层。
c′)在模制件上,在与凹陷的敞开侧相对的那侧上,最好通过丝网印刷施加印制导线。
d′)将LED管芯插入或者粘贴到凹陷中,其中LED管芯的所述极通过凹陷的底部贯穿接触,
e′)为了保护该侧上的印制导线,装备有LED管芯的模制件可以配备有保护薄膜。附加地可以将透明薄膜或者透明的塑料模制体施加到凹陷的敞开侧上。
f′)发光体可以通过插塞式连接与电源连接。
特别优选地,在上述的实施方式中,在模具中的塑料变形之前给塑料添加导热的添加剂,从而由LED管芯生成的热量可以更加有效地被排出。
在e′)中必要时安装到发光体上的附加的透明塑料模制体优选由微透镜组成,其中这些微透镜被布置为使得分别有一个微透镜被定位在在LED管芯上方。
替代于具有微透镜的上述塑料模制体(具有聚焦和提高效率的效果),可以使用具有扩散特性的塑料模制体(塑料薄膜),从而产生“泛光”而不是具有点光源(LED管芯)的光。
如果在该塑料薄膜或者该塑料模制体中加入或者涂覆发荧光的颜料,则在使用蓝色LED管芯时例如可以生成白光。通过使用荧光体可以取得不同的效果。
在使用所述极不处于一侧的LED管芯的情况下,如下实施用于制造发光体的方法:
首先制造具有凹陷的塑料模制件。之后将印制导线施加到模制件的两侧上。凹陷装备有LED管芯,其中所述极与印制导线接触(有一个极在凹陷的敞开侧上,还有一个极穿过凹陷的底部)。借助电源通过插塞式连接经由印制导线向LED管芯施加电流。
优选地将必要时配备有反射层的塑料薄膜施加到模制件凹陷的敞开侧上,其中LED管芯通过凹陷的底部辐射。
优选地将透明塑料薄膜或者透明塑料模制体施加到模制件上凹陷的敞开侧上,其中LED管芯在凹陷的敞开侧上辐射。
附图说明
在附图和相关描述中进一步阐述本发明。
图1示出根据本发明的发光体的透视片段;
图2示出凹陷的透视图;
图3示出穿过根据图2的凹陷的截面。
具体实施方式
如图1所示,在用1表示的塑料模制件中将LED管芯2放入凹陷5中。
凹陷5被配置为使得LED管芯的上侧大致地与模制件上侧平齐。印制导线3在模制件的上侧延伸,LED管芯的极4、4′与这些印制导线3接触。
图2示出凹陷5在塑料模制件的片段中的布置。
图3以截面示出图2的片段。

Claims (7)

1.由具有LED管芯(2)的透明塑料模制件(1)制成的发光体,其特征在于,凹陷(5)处于模制件中,在凹陷中分别布置有一个LED管芯,使得LED管芯的一侧几乎与模制件上侧平齐,并且LED管芯通过处于模制件上的电导线(3)与电源连接。
2.根据权利要求1所述的发光体,其特征在于,LED管芯(2)通过填料被固定到凹陷(5)中。
3.用于制造根据权利要求1或2之一所述的发光体的方法,其特征在于,
a)将热塑性塑料通过喷铸放入到模具中,其中模具具有要生成的塑料模制件的阴模,在冷却后将具有凹陷的透明塑料模制件从模具中取出,
b)优选通过丝网印刷将印制导线施加到模制件上凹陷的敞开侧上,
c)将LED管芯放入或者粘贴到模制件的凹陷中,其中两个极处于凹陷的敞开侧上并且在该侧上与印制导线接触,
d)必要时将必要时配备有反射层的塑料薄膜作为保护层在凹陷的敞开侧上施加到装备有LED管芯的模制件上,
e)发光体通过插塞式连接与电源连接。
4.用于制造根据权利要求1或2之一所述的发光体的方法,其特征在于,
a′)将热塑性塑料通过喷铸放入到模具中,其中模具具有要生成的塑料模制件的阴模,在冷却后将具有凹陷的透明塑料模制件从模具中取出,
b′)比要时优选通过丝网印刷将反射层施加到凹陷的敞开侧上,
c′)优选通过丝网印刷在与凹陷的敞开侧相对的那侧上将印制导线施加到模制件上,
d′)将LED管芯放入或者粘贴到模制件的凹陷中,其中两个极通过凹陷的底部与印制导线贯穿接触,
e′)必要时将塑料薄膜作为保护层施加到装备有LED管芯的模制件上以保护印制导线,
f′)必要时将透明塑料薄膜或者透明塑料模制体在凹陷的敞开侧上施加到模制件上,
g′)发光体通过插塞式连接与电源连接。
5.用于制造根据权利要求1或2之一所述的发光体的方法,其特征在于,
a″)将热塑性塑料通过喷铸放入到模具中,其中模具具有要生成的塑料模制件的阴模,在冷却后将具有凹陷的透明塑料模制件从模具中取出,
b″)优选通过丝网印刷将印制导线在凹陷的敞开侧和相对侧上施加到模制件上,
c″)将LED管芯装入或者粘贴到凹陷中,其中一个极处于凹陷的敞开侧上并且在该侧上与印制导线接触,还有一个极通过凹陷的底部与印制导线贯穿接触,
d″)发光体通过插塞式连接与电源连接。
6.根据权利要求5所述的方法,其特征在于,将必要时配备有反射层的塑料薄膜施加到模制件的凹陷的敞开侧上并且LED管芯通过凹陷的底部辐射。
7.根据权利要求5所述的方法,其特征在于,将透明塑料薄膜或者透明塑料模制体在凹陷的敞开侧上施加到模制件上并且LED管芯在凹陷的敞开侧上辐射。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112936734A (zh) * 2021-03-08 2021-06-11 东莞广华汽车饰件科技有限公司 一种灯板定位式胶膜汽车装饰件的注塑制造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2675390A1 (en) * 2009-08-13 2011-02-13 Norik Bonyadi Moulding with embedded lighting
DE102009060896A1 (de) * 2009-12-30 2011-07-07 ERCO GmbH, 58507 Lichtquellenmodul u. a.
DE102014110470A1 (de) * 2014-07-24 2016-01-28 Osram Opto Semiconductors Gmbh Beleuchtungsmodul
KR101847100B1 (ko) * 2017-01-02 2018-04-09 박승환 Uv 임프린팅 기술을 이용한 투명 발광장치 제조 방법 및 그에 따라 제조되는 투명 발광장치
DE102019106546A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0553511A (ja) * 1991-08-28 1993-03-05 Toyoda Gosei Co Ltd カラーデイスプレイ装置
JPH10150227A (ja) * 1996-11-15 1998-06-02 Rohm Co Ltd チップ型発光素子
JPH10308535A (ja) * 1997-05-02 1998-11-17 Citizen Electron Co Ltd 表面実装型発光ダイオード及びその製造方法
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
JP3746173B2 (ja) * 1999-03-12 2006-02-15 松下電器産業株式会社 面照明装置及びそれを用いた携帯端末装置
JP3774616B2 (ja) * 2000-06-29 2006-05-17 株式会社日立製作所 照明装置及び導光板の製造方法
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
JP4431925B2 (ja) * 2000-11-30 2010-03-17 信越半導体株式会社 発光素子の製造方法
JP2003011416A (ja) * 2001-06-28 2003-01-15 Kyocera Corp 光プリンタヘッド
JP2003023183A (ja) * 2001-07-06 2003-01-24 Stanley Electric Co Ltd 面実装型ledランプ
JP4067802B2 (ja) * 2001-09-18 2008-03-26 松下電器産業株式会社 照明装置
JPWO2003030274A1 (ja) * 2001-09-27 2005-01-20 日亜化学工業株式会社 発光装置およびその製造方法
JP4108318B2 (ja) * 2001-11-13 2008-06-25 シチズン電子株式会社 発光装置
JP2003158301A (ja) * 2001-11-22 2003-05-30 Citizen Electronics Co Ltd 発光ダイオード
JP3875914B2 (ja) 2002-05-14 2007-01-31 株式会社ケンウッド 電子機器および書き込み動作制御方法
JP2005535144A (ja) * 2002-07-31 2005-11-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 表面実装可能な半導体素子及び該半導体素子の製造のための方法
US20040048033A1 (en) * 2002-09-11 2004-03-11 Osram Opto Semiconductors (Malaysia) Sdn. Bhd. Oled devices with improved encapsulation
BE1015302A3 (fr) * 2003-01-10 2005-01-11 Glaverbel Vitrage comportant des composants electroniques.
DE202004005799U1 (de) * 2003-04-29 2004-06-24 Potthoff, Marc Leuchtkörper
KR20050092300A (ko) * 2004-03-15 2005-09-21 삼성전기주식회사 고출력 발광 다이오드 패키지
KR101085144B1 (ko) * 2004-04-29 2011-11-21 엘지디스플레이 주식회사 Led 램프 유닛
US7055969B2 (en) * 2004-04-29 2006-06-06 Hewlett-Packard Development Company, L.P. Reflective optical assembly
US7997771B2 (en) * 2004-06-01 2011-08-16 3M Innovative Properties Company LED array systems
JP4395104B2 (ja) * 2004-11-08 2010-01-06 アルプス電気株式会社 照明装置
DE102004054822A1 (de) 2004-11-13 2006-05-18 Schefenacker Vision Systems Germany Gmbh Leuchte für Fahrzeuge, vorzugsweise für Kraftfahrzeuge
JP2006179572A (ja) * 2004-12-21 2006-07-06 Sharp Corp 発光ダイオード、バックライト装置および発光ダイオードの製造方法
JP5209177B2 (ja) * 2005-11-14 2013-06-12 新光電気工業株式会社 半導体装置および半導体装置の製造方法
KR100828891B1 (ko) * 2006-02-23 2008-05-09 엘지이노텍 주식회사 Led 패키지
TWM302039U (en) * 2006-03-13 2006-12-01 Belletech Technology Co Ltd LED backlight module of display
US20070263408A1 (en) * 2006-05-09 2007-11-15 Chua Janet Bee Y Backlight module and method of making the module
JP5028562B2 (ja) * 2006-12-11 2012-09-19 株式会社ジャパンディスプレイイースト 照明装置及びこの照明装置を用いた表示装置
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112936734A (zh) * 2021-03-08 2021-06-11 东莞广华汽车饰件科技有限公司 一种灯板定位式胶膜汽车装饰件的注塑制造方法

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