CN101978096B - Ni-P层系统及其制备方法 - Google Patents
Ni-P层系统及其制备方法 Download PDFInfo
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- CN101978096B CN101978096B CN2009801100057A CN200980110005A CN101978096B CN 101978096 B CN101978096 B CN 101978096B CN 2009801100057 A CN2009801100057 A CN 2009801100057A CN 200980110005 A CN200980110005 A CN 200980110005A CN 101978096 B CN101978096 B CN 101978096B
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- 238000000034 method Methods 0.000 title claims description 30
- 238000002360 preparation method Methods 0.000 title claims description 8
- 229910018104 Ni-P Inorganic materials 0.000 claims abstract description 33
- 229910018536 Ni—P Inorganic materials 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052759 nickel Inorganic materials 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 238000005238 degreasing Methods 0.000 claims description 7
- 235000011007 phosphoric acid Nutrition 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 4
- MNAHQWDCXOHBHK-UHFFFAOYSA-N 1-phenylpropane-1,1-diol Chemical compound CCC(O)(O)C1=CC=CC=C1 MNAHQWDCXOHBHK-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007046 ethoxylation reaction Methods 0.000 claims description 3
- 150000004673 fluoride salts Chemical class 0.000 claims description 3
- 229910001506 inorganic fluoride Inorganic materials 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 238000005554 pickling Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 80
- 239000010931 gold Substances 0.000 description 36
- 238000007747 plating Methods 0.000 description 25
- 238000005260 corrosion Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 14
- 239000007788 liquid Substances 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000002253 acid Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 238000007598 dipping method Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 150000002815 nickel Chemical class 0.000 description 5
- DITXJPASYXFQAS-UHFFFAOYSA-N nickel;sulfamic acid Chemical compound [Ni].NS(O)(=O)=O DITXJPASYXFQAS-UHFFFAOYSA-N 0.000 description 5
- -1 poly(propylene oxide) Polymers 0.000 description 5
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000002816 nickel compounds Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 235000013024 sodium fluoride Nutrition 0.000 description 2
- 239000011775 sodium fluoride Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 229940095064 tartrate Drugs 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- HCUOEKSZWPGJIM-YBRHCDHNSA-N (e,2e)-2-hydroxyimino-6-methoxy-4-methyl-5-nitrohex-3-enamide Chemical compound COCC([N+]([O-])=O)\C(C)=C\C(=N/O)\C(N)=O HCUOEKSZWPGJIM-YBRHCDHNSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910015373 AuCo Inorganic materials 0.000 description 1
- 229910017392 Au—Co Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- 229930195725 Mannitol Natural products 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000594 mannitol Substances 0.000 description 1
- 235000010355 mannitol Nutrition 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 229920001983 poloxamer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
- C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/623—Porosity of the layers
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/48—Electroplating: Baths therefor from solutions of gold
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
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- Chemical Kinetics & Catalysis (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
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- General Chemical & Material Sciences (AREA)
- Electroplating Methods And Accessories (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明涉及一种层系统,其包含在表面已经过电抛光的基底上的(i)厚度≤3.0微米的Ni层,(ii)厚度≤1.0微米的Ni-P层,(iii)厚度≤1.0微米的Au层。
Description
技术领域
本发明涉及包含在基底、优选铜基基底上的Ni-P层和Au层的耐蚀导电层系统。本发明进一步涉及该系统的制备方法和包含该系统的电子器件。
背景技术
技术应用领域、尤其是连接器工业中的腐蚀要求变得越来越苛刻。一个实例是所要求的耐蚀性,其中使该技术要求标准化的努力在部分上不能满足市场要求。
镀金常用在电子器件中,以在铜上、通常在电连接器和印刷电路板中提供耐蚀导电层。如果不使用势垒金属,铜原子容易扩散穿过金层,造成其表面的锈蚀和氧化物和/或硫化物层的形成。在镀金之前在铜基底上沉积合适的势垒金属(例如镍)层。镍层为金层提供机械背衬,从而改进其耐磨性。镍层也降低该金层中存在的孔隙的影响。镍和金层通常都通过电镀或无电镀来沉积。
为了提高耐蚀、耐磨和耐热性,可以使用包含镍和磷的层代替纯镍。随着磷含量提高,该层的延性和脆性变低,这造成部件的裂化和弱化。此外,比镍低的镀覆速度是另一缺点,因为必须降低连续镀覆生产线的速度且必须分别增加镀槽的数量。
在 中,Heinisch和Leyendecker描述了Ni/Ni-P/Au-Co层组合的优化,用以制造含有较少贵金属的可靠连接器(W. ,T.Heinisch,K.Leyendecker,Galvanotechnik 9(2003),2130-2140)。在此,用镍、特别是具有更高镀覆速率和更好延性特性的氨基磺酸镍部分地替代镍-磷层。为了鉴定不同的层组合,使用IEC 61076-4-100/101/104和GR-1217-CORE标 准。已经使用用于电信用途的专用连接器作为试验部件。作为参考,同时测试Ni/NiPd/AuCo镀覆的连接器。该Ni/NiP/Au镀覆的连接器通过在4组分混合气体中暴露10天的试验——根据IEC标准——和125次插/拔周期的两倍。在10天后,在湿热(40℃,93%RH)中储存21天,多于一半的含Ni/NiP/Au的受试器件不合格,而Ni/NiPd/Au都通过。
最适宜的层厚度经证实为Ni(1.5微米)、NiP(0.7微米)、Au(0.15微米)。试验标准为接触电阻。
该文章没有给出关于弯曲特性的信息。Ni-P层厚度为0.5-1.0微米,仍然高。此外,没有评论该连接器的几何,因此没有暗示这些结果是否适用于具有不同几何的不同类型的连接器。接触电阻的试验标准仅给出较少关于接触面积的信息,但没有关于相邻区的信息。
发明概要
本发明的目的是提供具有最高耐蚀和耐磨的可焊金属涂层的层系统,其充分耐受在热处理下的锈蚀并表现出优异的机械性质,例如抗疲劳性、延性和抗张强度。
通过层系统的制备方法实现了所述目的,所述层系统包含在基底上的:
(i)厚度≤3.0微米的Ni层,
(ii)厚度≤1.0微米的Ni-P层,
(iii)≤1.0微米的Au层,
所述方法包括下述步骤:
(i)电抛光所述基底的表面,
(ii)将Ni层镀到上述步骤(i)中获得的电抛光表面上,使得所述Ni层的厚度≤3.0微米,
(iii)将Ni-P层镀到上述步骤(ii)中获得的Ni层上,使得所述Ni-P层的厚度≤1.0微米,
(iv)将Au层镀到上述步骤(iii)中获得的Ni-P层上,使得所述Au层的厚度≤1.0微米。
附图简述
图1显示了关于总孔隙面积的来自根据ASTM B 735-95标准的硝酸蒸气腐蚀试验的结果。总孔隙面积是指试样的孔隙面积与总表面积的比率。
实施例号根据表1a-c。
发明详述
根据本发明获得的层系统优选包含铜基基底。
本说明书中通篇使用的术语“铜基”是指纯铜和含铜的混合物,其中铜含量为至少50重量%。术语“纯铜”是指至少98重量%铜的铜。含铜的混合物可以是铜与任何其它化学元素或与多种化学元素(例如金属或半金属)的混合物,并且是合金。对于本发明,铜基材料最优选是纯铜材料。
根据本发明获得的层系统包含厚度为0.1至3.0微米的镍层,该层在沉积Ni-P层之前镀在基底表面上。该镍层优选具有1.0至2.0微米的厚度,更优选1.1至1.4微米的厚度。
如上所述,所述Ni-P层具有≤1.0微米的厚度。该Ni-P层优选具有0.05微米至0.8微米、更优选0.1微米至0.4微米的厚度。所述Ni-P层的绝对下限为0.05微米。
所述Ni-P层优选具有3至25重量%的磷含量。该磷含量更优选在4至17重量%、最优选8至16重量%的范围内。
所述Au层可包含选自由Fe、Co、Ni或纯Au组成的组的附加元素。在ASTM B488-95中描述了Au层中的少量Fe、Co、Ni对电子应用而言的好处。此类掺杂剂充当光亮剂,并提高Au涂层的耐磨性。此外,ASTMB488-95描述了纯Au涂层作为Fe或Co或Ni掺杂的Au涂层的替代物的适用性。
该Au层具有≤1.0微米的厚度。该Au层优选具有0.05微米至0.7微米、更优选0.1微米至0.4微米的厚度。所述Au层的绝对下限为0.01微米。
根据本发明,所述层系统通过包含下述步骤的方法制备:电抛光要涂布的基底的表面,将≤3.0微米的Ni层镀到该电抛光表面上,将≤1.0微米的Ni-P层镀到该Ni层上,和将厚度≤1.0微米的薄Au层镀到该Ni-P层上。
在电抛光步骤之前,优选通过热脱脂、阴极脱脂和酸洗处理基底表面。
在Ni-P层上镀覆Au层的步骤后,可以进行该层系统的后浸渍处理,这将在下面描述。该后浸渍改进了该层系统的表面在热和湿环境中的储存性能和可焊性。
本发明尤其基于令人惊讶的发现,即,在将Ni/Ni-P层镀到基底表面 上的步骤之前的电化学抛光步骤——通过在从金属表面上除去微小量的材料的同时金属表面的平滑化和抛光——对尽可能降低几何构造对要镀覆的部件上的电流密度分布的影响而言是必要的。
因此,0.05微米的极小Ni-P层足以显著改进最终耐蚀性。其优点是更好的机械性质以及为顺应较低速的Ni-P镀覆步骤而作出的2至4倍速度的极低调节,这意味着较低成本(从氨基磺酸镍镀浴中沉积的速度是从Ni-P镀浴中沉积的2-4倍)。可以根据不同腐蚀要求,通过电解槽中磷涂布物质和沉积过程中的电流密度的变化调节P-含量。
电化学抛光已知用于铜和铜合金的阳极抛光,并适合以条到条以及卷到卷形式应用。其具有去污能力并在操作过程中产生细密泡沫。
该电抛光过程使金属物体的微观表面平滑化和流线型化。因此,该表面变得微观无轮廓。在此从被抛光的表面上以一个个离子的形式(ion bv ion)除去金属。金属表面的平滑化是电抛光的主要和最有利的作用之一。
进一步有利的作用是在宽操作范围内的均匀抛光作用。此外,本发明中所用的电化学抛光步骤是各种铜合金基底的通用电抛光法,该方法具有去污能力。其优选为合并了电抛光和去夹杂物(合金元素)步骤的2合1法。其还可用于修边。
适用于电化学抛光步骤的组合物包含正磷酸、非离子型表面活性剂、乙氧基化的双酚A、无机氟化物盐和多元醇。
该组合物包含500至1700克/升85%正磷酸,更优选800至1200克/升的量的正磷酸。
该非离子型表面活性剂的含量为0.05至5克/升,优选0.1至1克/升,包括例如双酚衍生物、乙氧基化双酚A、Luton HF 3(BASF);聚环氧乙烷、聚环氧丙烷及其混合物、EO/PO嵌段共聚物及其包含末端芳基或烷基的衍生物。
适用在电化学抛光组合物中的无机氟化物盐包括,例如,氟化钠、氟化钾、二氟化氢铵,且含量为0.1至20克/升,优选1至5克/升(作为NaF计算)。
多元醇以1至100克/升、优选10至50克/升的量包含在该组合物中,并包括甘油、乙二醇和甘露醇。
用在本发明的电化学抛光步骤中的一种优选组合物是可购自Atotech Deutschland GmbH的ElectroGlow。
一般而言,电抛光步骤中所用的温度为20至60℃,20至30℃是优选的。
阳极电流密度通常为20至50ASD,优选20至30ASD。
浸渍时间为30至90秒。
操作过程中的搅拌通常不要求,但是优选的。
作为阴极材料,可以使用316型不锈钢。
操作过程中的阴极/阳极(引线框)面积比优选>3。
应至少每周进行阴极板的清洁,最佳结果取决于负荷。
如上所述,施加到基底表面上的第一涂层是纯镍涂层。
更特别地,该纯镍涂层具有大约0.1微米至大约3微米的厚度。其厚度可以为至少大约0.1微米,通常至少大约0.2微米,通常至少大约0.3微米,更优选至少大约0.4微米,再更优选至少大约0.5微米。其厚度可等于或小于大约3微米,优选等于或小于大约1.8微米。
通过使基底与纯镍电镀液接触,实现纯镍涂层的沉积。
此类纯镍电镀液是本领域中公知的,并例如描述在Schlesinger,Paunovic:Modern Electroplating,第4版,John Wiley & Sons,Inc.,New York,2000,第147页中,并可含有镍化合物的一种或多种可溶源,例如卤化镍,例如氯化镍,硫酸镍、氨基磺酸镍、氟硼酸镍及其混合物。此类镍化合物通常以足以在电镀液中提供大约10克/升至大约450克/升浓度镍的浓度使用。该镍电镀浴优选含有硫酸镍、氯化镍和氨基磺酸镍。该浴中氯化镍的量进一步优选为8克/升至15克/升,氨基磺酸镍形式的镍的量为80克/升至450克/升。
合适的镍电镀液通常含有一种或多种酸,例如硼酸、磷酸或其混合物。示例性的含硼酸的镍电镀浴含有30克/升至60克/升的硼酸,优选大约45 克/升。通常,此类浴的pH值为大约2.0至大约5.0,优选大约4.0。此类纯镍电镀液的工作温度可以为大约30℃至大约70℃,优选50℃至65℃。平均阴极电流密度可以为大约0.5至30A/dm2,3至6A/dm2提供最佳范围。
用在本发明中的优选镍电镀液是申请人的Ni-Sulphamate HS电镀液,其可用在为现代卷到卷和现场安装中所用的条带、线、连接器和引线框的连续镀覆设计的高速镀镍法中。其提供极延性的低应力镍沉积物,其根据要求可以是消光或光亮的。如果使用Ni-Sulphamate HS添加剂,可以在宽电流密度范围内实现具有低孔隙率和轻微匀平趋势的光亮延性沉积物。
通过使涂有纯镍涂层的基底与镍-磷电镀浴接触,实现镍-磷涂层的沉积。
此类镍-磷电镀液是本领域中公知的。此类浴可含有与纯镍电镀液相同的组分。这些液体可以例如含有氨基磺酸镍、硫酸镍、氯化镍、氨基磺酸、磷酸和硼酸。此外,这些液体含有磷源,如磷酸、亚磷酸或其衍生物,例如其盐,通常是钠盐。
优选的镍-磷电镀液是申请人的Novoplate HS电镀液,其在强酸法中用于镀覆磷含量为3至25重量%、优选4至17重量%、更优选8至16重量%的电解NiP沉积物。该无氨法不含有毒添加剂,并且不容易自分解。Novoplate HS可用于筒、架和高速用途。该沉积物表现出优异的腐蚀和磨损性质。
传统电镀条件可用于电解沉积镍-磷涂层。通常,该镍-磷电镀浴在50至80℃的温度使用。镍-磷电镀的合适电流密度为1至50A/dm2。
可以由已知金电镀液沉积金层。工艺条件基本如下:
金含量:4至18克/升
温度:40至65℃
pH值:4.0至4.8
电流密度:2.5至60A/dm2
电镀速度:0.5至20微米/分钟
此类电镀液的一个优选实例是申请人的Aurocor HSC/Aurocor HSN镀浴。其可用在为现代卷到卷和现场安装中所用的条带、线、连接器和引线框的连续镀覆设计的高速镀金法中。该方法产生硬的、光亮的钴或镍合金沉积物,其对加工需要延性以及抗化学和机械侵袭性的电触点而言是理想的。
对于镀金用途,可以使用申请人的市售镀浴。工艺条件基本如下:Aurocor K24HF或Aurochor HS:
金含量:1至18克/升
温度:40至75℃
pH值:3.8至7.0
电流密度:0.5至60A/dm2
电镀速度:0.2至15微米/分钟
为避免在热/湿储存条件下腐蚀,可以使用后浸渍。在申请人的共同待审欧洲专利申请07013447.3中描述了合适的后浸渍溶液,该申请涉及用于提高金属或金属合金表面的可焊性和耐蚀性的溶液和方法。这种溶液是水溶液,其包含:
(a)至少一种下式所示的磷化合物或其盐:
其中R1、R2和R3可以相同或不同,并独立地选自H或合适的抗衡离子,例如钠或钾,取代或未取代、直链或支链的C1-C20-烷基,直链或支链、取代或未取代的C1-C6-烷芳基,和取代或未取代的芳基,且其中n为1至15的整数。
(b)至少一种下式所示的增强可焊性的化合物或其盐:
其中R1和R7可以相同或不同,并独立地选自H或合适的抗衡离子,例如钠或钾,取代或未取代、直链或支链的C1-C20-烷基,直链或支链的C1-C6-烷芳基,烯丙基、芳基、硫酸根或硫酸酯基团、磷酸根或磷酸酯基团、卤素和磺酸根或磺酸酯基团,且其中多个R2、R3、R5和R6基团中的各个可以相同或不同,并独立地选自H或直链或支链、取代或未取代的C1-C6-烷基,且其中R4选自直链或支链、取代或未取代的C1-C12-亚烷基,1,2-、1,3-或1,4-取代的芳基,1,3-、1,4-、1,5-、1,6-或1,8-取代的萘基,更高级的成环芳基,环烷基和-O-(CH2(CH2)nOR1,其中R1具有上文定义的含义且R4选自下式所示的基团:
其中各个环的取代独立地为1,2-、1,3-或1,4,其中q和r相同或不同,并且是0至10,R8和R9独立地选自H或直链或支链C1-C6-烷基,且其中m、n、o和p是0至200的整数,并且可以相同或不同,且m+n+o+p为至少2。
在该申请的第7页第1行至第8页第7行中描述了优选的后浸渍水溶液,该溶液也是本发明中所用的优选溶液。
本发明中所用的水性组合物通常具有1-8、优选2-5的pH值。为了确保操作过程中的恒定pH值,优选对该溶液使用缓冲体系。合适的缓冲体系包含甲酸/甲酸盐、酒石酸/酒石酸盐、柠檬酸/柠檬酸盐、乙酸/乙酸盐和草酸/草酸盐。优选使用上述酸式盐的钠或钾盐。除所提到的酸和相应盐外,产生1-8、优选2-5的水性组合物pH值的所有缓冲体系都可用。
缓冲剂浓度对酸而言为5-200克/升,对其相应的盐而言为1-200克/升。
所述至少一种式I.至VI.所示的磷化合物在该水溶液中优选以0.0001至0.05摩尔/升、更优选0.001至0.01摩尔/升的量使用。
所述至少一种式VII.所示的可焊性增强化合物(b)通常以0.0001至0.1摩尔/升,优选0.001至0.005摩尔/升的量使用。
任选地,该溶液可另外含有市售防沫剂。
一种优选的后浸渍溶液是申请人的Protectostan溶液,其是高度有效的缓蚀剂。
本发明的层系统可成功地用于电子器件基底,更特别是电子部件的引线,更尤其是引线框或电连接器或电触点或无源元件(例如片状电容器和片状电阻器)的引线。
通过下述实施例进一步例证本发明。
制备例
按照表1中所示的工艺次序制备实施例3-6中所述的涂层。对于实施例1-2,省略工艺步骤3。
在镀覆之前,将基底脱脂(超声脱脂;阴极脱脂),在电抛光步骤之前,用申请人的Uniclean 675将基底活化。在Ni层镀覆之后,使用10%硫酸将该表面活化。在Ni-P镀覆之后,再用10%硫酸将该表面活化,然后镀覆Au层。在每一步骤之间,用自来水洗涤样品。
最后将基底干燥,并施以下述耐蚀性试验。
表1:所用实施例1-6的工艺次序
步骤 | 温度 | 组分 |
1 | 30℃ | Electroglow(电抛光) |
2 | 55℃ | Nickelsulphamate HS(Ni) |
3 | 70℃ | Novoplate HS(Ni-P) |
4 | 30℃ | Auchrochor HSC(pre-AU) |
5 | 室温至60℃ | Auchrochor HSC(AU) |
6 | 室温 | 后浸渍 |
作为基底,选择基材CuSn6,样品尺寸0.3×25×100毫米。
制备下述层组合Ni/Ni-P/Au,下面指明条件以及层厚度、磷含量和附加元素。
1)电抛光(ElctroGlow)
构成:见TDS(750毫升/升ElectroGlow A+60毫升/升ElectroGlow B)
温度:25℃
电流密度:60A/dm2
接触时间:5秒
2)Ni-电解质(Ni-Sulphamate HS)
构成:100至110克/升Ni、4至8克/升氯化物,无添加剂
温度:55℃
电流密度:10A/dm2
pH:3.5至4
厚度:1.2至1.4微米(N和NiP的总和=1.5微米)
3)NiP-电解质(Novoplate HS)
构成:100至120克/升Ni,100毫升/升Novoplate HS补充剂
温度:70℃
电流密度:10A/dm2
pH:1.2至1.8
厚度:0.1至0.3微米(Ni和NiP的总和=1.5微米)
沉积物的P含量:12至15重量%P
4)Au-电解质(Aurocor SC,Co-合金化)
构成:4克/升Au
温度:41至43℃
电流密度:11A/dm2
pH:4至4.2
厚度:0.3微米
耐蚀性试验(NAV试验)
使用金属基底上的Au涂层的孔隙率的标准试验(ASTM B 735-95),其在低相对湿度下使用硝酸蒸气(NAV)。在此试验中,气体混合物在孔隙位置处与可腐蚀基底金属反应,产生在Au表面上作为离散污点出现的反应产物。此试验法旨在用于孔隙率(即每单位面积的孔隙数)的定量描述。
所用试验参数如下:
(i)HNO3:70%
(ii)接触时间:120分钟(ASTM标准60分钟)
(iii)相对湿度:55%
(iv)温度:23℃
对上述实施例1至6中获得的层系统施以上述耐蚀性试验。
结果列在下表2a和2b中:
表2a
表2b
对实施例1至6测得的孔隙总数显示在图1中。
根据这些结果,可以得出下述结论:
对于涂布到在金属层沉积之前未经电抛光的基底上的层系统,与由Ni、Ni-P和Au构成的三层系统(实施例3和5)相比,由Ni和Au构成的两层系统(实施例1)实现了“孔隙总数”方面的最佳NAV试验性能。但是,实施例1的层系统相对较脆并可能形成裂纹,尤其是在挠性基底中。因此,物理(特别是机械)性质尤其在高温下受损。特别在连接器和引线框中可能形成此类裂纹。
如果在金属层沉积之前对该基底施以电抛光程序,耐蚀性大大增强。出乎意料地,与包含Ni和Au的两层系统(实施例2)相比,基底的电抛光对由Ni、Ni-P和Au构成的层系统(实施例4和6)具有更强的积极影响。此外,本发明的实施例4和6具有优异的机械性质,例如优异的抗疲劳性、延性和抗张强度。如果引线框或连接器被认为要确保充足的弯曲性能,特别需要此类优异的机械特性。
Claims (15)
1.层系统的制备方法,所述层系统包含在基底上的:
(i)厚度≤3.0微米的Ni层,
(ii)厚度≤1.0微米的Ni-P层,
(iii)≤1.0微米的Au层,
所述方法包括下述步骤:
(i)电抛光所述基底的表面,
(ii)将Ni层镀到上述步骤(i)中获得的电抛光表面上,使得所述Ni层的厚度≤3.0微米,
(iii)将Ni-P层镀到上述步骤(ii)中获得的Ni层上,使得所述Ni-P层的厚度≤1.0微米,
(iv)将Au层镀到上述步骤(iii)中获得的Ni-P层上,使得所述Au层的厚度≤1.0微米,
其中电抛光步骤(i)中所用的组合物包含正磷酸、非离子型表面活性剂、乙氧基化的双酚A、无机氟化物盐和多元醇。
2.根据权利要求1的方法,在电抛光步骤(i)之前进一步包括下述步骤:
(v)热脱脂,
(vi)阴极脱脂,和
(vii)酸洗。
3.根据权利要求1或2的方法,其中Ni层以1.0至2.0微米的厚度镀到所述电抛光表面上。
4.根据权利要求1或2的方法,进一步包括:
(viii)在步骤(iv)后通过后浸渍处理所述层系统的步骤。
5.根据权利要求1的方法,其中所述基底包含铜基基底。
6.根据权利要求1的方法,其中所述Ni-P层具有0.05微米至0.8微米的厚度。
7.根据权利要求6的方法,其中所述Ni-P层具有0.01微米至0.40微米的厚度。
8.根据权利要求1、5至7任一项的方法,其中所述Ni层具有1.0至2.0微米的厚度。
9.根据权利要求3的方法,进一步包括:
(viii)在步骤(iv)后通过后浸渍处理所述层系统的步骤。
10.根据权利要求1的方法,其中所述Ni-P层具有3至25重量%的磷含量。
11.根据权利要求1的方法,其中所述Au层进一步包含选自由Fe、Co和Ni组成的组的元素。
12.电子器件基底,包含通过根据权利要求1至11任一项的方法获得的层系统。
13.根据权利要求12的电子器件基底,其是电子部件的引线。
14.根据权利要求13的电子器件基底,其是引线框、电连接器、电触点或无源元件的引线。
15.根据权利要求14的电子器件基底,其中所述无源元件是片状电容器和片状电阻器。
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