CN101937850B - 封装制造方法和半导体装置 - Google Patents

封装制造方法和半导体装置 Download PDF

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Publication number
CN101937850B
CN101937850B CN2010102151737A CN201010215173A CN101937850B CN 101937850 B CN101937850 B CN 101937850B CN 2010102151737 A CN2010102151737 A CN 2010102151737A CN 201010215173 A CN201010215173 A CN 201010215173A CN 101937850 B CN101937850 B CN 101937850B
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China
Prior art keywords
leads
resin
region
lead
land
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Expired - Fee Related
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CN2010102151737A
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English (en)
Chinese (zh)
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CN101937850A (zh
Inventor
小野光司
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Canon Inc
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Canon Inc
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Publication of CN101937850A publication Critical patent/CN101937850A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/479—Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/153—Containers comprising an insulating or insulated base having interconnections in passages through the insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
CN2010102151737A 2009-06-30 2010-06-25 封装制造方法和半导体装置 Expired - Fee Related CN101937850B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-156325 2009-06-30
JP2009156325A JP5178648B2 (ja) 2009-06-30 2009-06-30 パッケージの製造方法、及び半導体装置

Publications (2)

Publication Number Publication Date
CN101937850A CN101937850A (zh) 2011-01-05
CN101937850B true CN101937850B (zh) 2012-08-22

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Application Number Title Priority Date Filing Date
CN2010102151737A Expired - Fee Related CN101937850B (zh) 2009-06-30 2010-06-25 封装制造方法和半导体装置

Country Status (3)

Country Link
US (2) US8450153B2 (https=)
JP (1) JP5178648B2 (https=)
CN (1) CN101937850B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106686888A (zh) * 2015-11-11 2017-05-17 旭景科技股份有限公司 形成增强型生物传感模块的印刷电路板元件及其制造方法
US9978675B2 (en) * 2015-11-20 2018-05-22 Canon Kabushiki Kaisha Package, electronic component, and electronic apparatus
CN106024823B (zh) * 2016-07-29 2020-04-21 格科微电子（上海）有限公司 Cmos图像传感器的封装方法
KR102847046B1 (ko) * 2019-05-08 2025-08-18 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024083A (ja) * 1999-07-09 2001-01-26 Matsushita Electronics Industry Corp 樹脂封止型半導体装置の製造方法
CN1369911A (zh) * 2001-02-14 2002-09-18 松下电器产业株式会社 导线框、使用该导线框的半导体装置及其制造方法
CN101162712A (zh) * 2006-10-13 2008-04-16 株式会社瑞萨科技 半导体装置及其制造方法
CN101345227A (zh) * 2007-07-09 2009-01-14 三星Techwin株式会社 引线框架、包括该引线框架的半导体封装及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3500361B2 (ja) 2001-02-14 2004-02-23 松下電器産業株式会社 リードフレーム及びその製造方法
JP2003234425A (ja) * 2002-02-07 2003-08-22 Mitsui Chemicals Inc 半導体素子装着用中空パッケージ
EP1357605A1 (en) * 2002-04-22 2003-10-29 Scientek Corporation Image sensor semiconductor package with castellation
JP4779614B2 (ja) * 2005-12-08 2011-09-28 ヤマハ株式会社 半導体装置
EP1795496A2 (en) * 2005-12-08 2007-06-13 Yamaha Corporation Semiconductor device for detecting pressure variations
WO2008057770A2 (en) * 2006-10-27 2008-05-15 Unisem (Mauritius) Holdings Limited Partially patterned lead frames and methods of making and using the same in semiconductor packaging

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024083A (ja) * 1999-07-09 2001-01-26 Matsushita Electronics Industry Corp 樹脂封止型半導体装置の製造方法
CN1369911A (zh) * 2001-02-14 2002-09-18 松下电器产业株式会社 导线框、使用该导线框的半导体装置及其制造方法
CN101162712A (zh) * 2006-10-13 2008-04-16 株式会社瑞萨科技 半导体装置及其制造方法
CN101345227A (zh) * 2007-07-09 2009-01-14 三星Techwin株式会社 引线框架、包括该引线框架的半导体封装及其制造方法

Also Published As

Publication number Publication date
CN101937850A (zh) 2011-01-05
US8450153B2 (en) 2013-05-28
JP5178648B2 (ja) 2013-04-10
US20100327428A1 (en) 2010-12-30
US8847379B2 (en) 2014-09-30
US20130200505A1 (en) 2013-08-08
JP2011014661A (ja) 2011-01-20

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Granted publication date: 20120822

Termination date: 20180625