CN101903159A - 多重表面上的接触角衰减 - Google Patents

多重表面上的接触角衰减 Download PDF

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Publication number
CN101903159A
CN101903159A CN2008801221593A CN200880122159A CN101903159A CN 101903159 A CN101903159 A CN 101903159A CN 2008801221593 A CN2008801221593 A CN 2008801221593A CN 200880122159 A CN200880122159 A CN 200880122159A CN 101903159 A CN101903159 A CN 101903159A
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CN
China
Prior art keywords
surfactant
template
contact angle
substrate
region
Prior art date
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Pending
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CN2008801221593A
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English (en)
Chinese (zh)
Inventor
F·Y·徐
I·M·麦克麦基
P·B·拉德
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Canon Nanotechnologies Inc
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Molecular Imprints Inc
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Publication of CN101903159A publication Critical patent/CN101903159A/zh
Pending legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN2008801221593A 2007-12-18 2008-12-18 多重表面上的接触角衰减 Pending CN101903159A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US1457407P 2007-12-18 2007-12-18
US61/014,574 2007-12-18
US12/336,821 US8142703B2 (en) 2005-10-05 2008-12-17 Imprint lithography method
US12/336,821 2008-12-17
PCT/US2008/013827 WO2009082458A2 (en) 2007-12-18 2008-12-18 Contact angle attenuations on multiple surfaces

Publications (1)

Publication Number Publication Date
CN101903159A true CN101903159A (zh) 2010-12-01

Family

ID=40801728

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801221593A Pending CN101903159A (zh) 2007-12-18 2008-12-18 多重表面上的接触角衰减

Country Status (6)

Country Link
US (1) US8142703B2 (enExample)
EP (1) EP2227575A4 (enExample)
JP (1) JP5020385B2 (enExample)
KR (1) KR20100105659A (enExample)
CN (1) CN101903159A (enExample)
WO (1) WO2009082458A2 (enExample)

Cited By (1)

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CN102507393A (zh) * 2011-11-08 2012-06-20 国网技术学院 一种涂层表面接触角测量装置及测试方法

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JP6328001B2 (ja) 2013-08-30 2018-05-23 キヤノン株式会社 インプリント用硬化性組成物、膜、膜の製造方法
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US10883006B2 (en) 2016-03-31 2021-01-05 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10829644B2 (en) 2016-03-31 2020-11-10 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10754243B2 (en) 2016-03-31 2020-08-25 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10754244B2 (en) 2016-03-31 2020-08-25 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10845700B2 (en) 2016-03-31 2020-11-24 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10754245B2 (en) 2016-03-31 2020-08-25 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10578965B2 (en) 2016-03-31 2020-03-03 Canon Kabushiki Kaisha Pattern forming method
KR102385158B1 (ko) 2017-03-08 2022-04-12 캐논 가부시끼가이샤 패턴 형성 방법, 임프린트 전처리 코팅 재료, 및 기판의 전처리 방법
JP7071331B2 (ja) 2017-03-08 2022-05-18 キヤノン株式会社 光ナノインプリント技術を用いたパターン形成方法、インプリント装置、および硬化性組成物
JP7425602B2 (ja) 2017-03-08 2024-01-31 キヤノン株式会社 パターン形成方法、ならびに加工基板、光学部品及び石英モールドレプリカの製造方法、ならびにインプリント前処理コーティング材料及びそれとインプリントレジストとのセット
JP7034696B2 (ja) * 2017-12-14 2022-03-14 キヤノン株式会社 硬化物パターンの製造方法、加工基板の製造方法、回路基板の製造方法、電子部品の製造方法、およびインプリントモールドの製造方法
CN115970784A (zh) 2018-07-20 2023-04-18 布赖顿技术有限责任公司 从液体微滴分配系统收集样本确定微滴质量的方法和装置

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