WO2009082458A2 - Contact angle attenuations on multiple surfaces - Google Patents

Contact angle attenuations on multiple surfaces Download PDF

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Publication number
WO2009082458A2
WO2009082458A2 PCT/US2008/013827 US2008013827W WO2009082458A2 WO 2009082458 A2 WO2009082458 A2 WO 2009082458A2 US 2008013827 W US2008013827 W US 2008013827W WO 2009082458 A2 WO2009082458 A2 WO 2009082458A2
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WO
WIPO (PCT)
Prior art keywords
surfactant
template
contact angle
substrate
imprint fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2008/013827
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English (en)
French (fr)
Other versions
WO2009082458A3 (en
Inventor
Frank Y. Xu
Ian M. Mcmackin
Pankaj B. Lad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Nanotechnologies Inc
Original Assignee
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Priority to JP2010539479A priority Critical patent/JP5020385B2/ja
Priority to EP08865713A priority patent/EP2227575A4/en
Priority to CN2008801221593A priority patent/CN101903159A/zh
Publication of WO2009082458A2 publication Critical patent/WO2009082458A2/en
Publication of WO2009082458A3 publication Critical patent/WO2009082458A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Definitions

  • Nano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller.
  • One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits.
  • the semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, therefore nano-fabrication becomes increasingly important.
  • Nano- fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed.
  • Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like.
  • An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography.
  • An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent includes formation of a relief pattern in a formable (polymehzable) layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
  • the substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process.
  • the patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate.
  • the formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid.
  • the template is separated from the rigid layer such that the template and the substrate are spaced apart.
  • the substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.
  • FIG. 1 illustrates a simplified side view of a lithographic system in accordance with an embodiment of the present invention.
  • FIG. 2 illustrates a simplified side view of the substrate shown in
  • FIG. 1 having a patterned layer positioned thereon.
  • FIGS. 3A-3C illustrate simplified side views of a template being treated with imprint fluid containing polymerizable material and surfactant liquid.
  • FIGS. 4A-4C illustrate simplified side views of a testing substrate having surfactant solution and imprint fluid deposited thereon.
  • FIGS. 5A-5C illustrate simplified side views of a testing substrate having solvent and imprint fluid deposited thereon.
  • FIG. 6 illustrates a flow chart of an exemplary method for providing suitable wetting characteristics between a template and a polymerizable material.
  • FIGS. 7A-7B illustrate a simplified side view and a top down view, respectively, of surfactant depleted regions SDR and surfactant rich regions SRR after imprinting using a first drop pattern.
  • FIG. 8 illustrates a flow chart of another exemplary method for providing suitable wetting characteristics between a template and a polymerizable material.
  • a lithographic system 10 used to form a relief pattern on substrate 12.
  • Substrate 12 may be coupled to substrate chuck 14.
  • substrate chuck 14 is a vacuum chuck.
  • Substrate chuck 14, however, may be any chuck including, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or the like. Exemplary chucks are described in U.S. Patent No. 6,873,087, which is hereby incorporated by reference herein.
  • Stage 16 may provide motion along the x, y, and z axes. Stage 16, substrate 12, and substrate chuck 14 may also be positioned on a base (not shown).
  • Template 18 Spaced-apart from substrate 12 is template 18.
  • Template 18 may include mesa 20 extending therefrom towards substrate 12, mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20. Alternatively, template 18 may be formed without mesa 20.
  • Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like.
  • patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26, though embodiments of the present invention are not limited to such configurations. Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12.
  • Template 18 may be coupled to chuck 28.
  • Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Patent No. 6,873,087, which is hereby incorporated by reference herein. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18.
  • System 10 may further comprise fluid dispense system 32.
  • Fluid dispense system 32 may be used to deposit polymerizable material 34 on substrate 12.
  • Polymerizable material 34 may be positioned upon substrate 12 using techniques such as drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like.
  • Polymerizable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 20 and substrate 12 depending on design considerations.
  • Polymerizable material 34 may comprise a monomer mixture as described in U.S. Patent No. 7,157,036 and U.S. Patent Publication No.
  • system 10 may further comprise energy source 38 coupled to direct energy 40 along path 42.
  • Imprint head 30 and stage 16 may be configured to position template 18 and substrate 12 in superimposition with path 42.
  • System 10 may be regulated by processor 54 in communication with stage 16, imprint head 30, fluid dispense system 32, and/or source 38, and may operate on a computer readable program stored in memory 56.
  • Either imprint head 30, stage 16, or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by polymerizable material 34.
  • imprint head 30 may apply a force to template 18 such that mold 20 contacts polymerizable material 34.
  • source 38 produces energy 40, e.g., ultraviolet radiation, causing polymerizable material 34 to solidify and/or cross-link conforming to a shape of surface 44 of substrate 12 and patterning surface 22, defining patterned layer 46 on substrate 12.
  • Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52, with protrusions 50 having a thickness U and residual layer having a thickness t 2 .
  • the above-mentioned system and process may be further employed in imprint lithography processes and systems referred to in U.S. Patent No. 6,932,934, U.S. Patent Publication No. 2004/0124566, U.S. Patent Publication No. 2004/0188381 , and U.S. Patent Publication No. 2004/0211754, each of which is hereby incorporated by reference herein.
  • the above-mentioned system and process may be employed using techniques including, but not limited to, photolithography (e.g., various wavelengths including G line, I line, 248 nm, 193 nm, 157 nm and 13.2-13.4 nm), contact lithography, e-beam lithography, x-ray lithography, ion- beam lithography, atomic lithography, and the like.
  • photolithography e.g., various wavelengths including G line, I line, 248 nm, 193 nm, 157 nm and 13.2-13.4 nm
  • contact lithography e.g., various wavelengths including G line, I line, 248 nm, 193 nm, 157 nm and 13.2-13.4 nm
  • contact lithography e.g., various wavelengths including G line, I line, 248 nm, 193 nm, 157 nm and 13.2-13.4 nm
  • contact lithography e.g
  • FIGS. 3A-3C illustrate simplified side views of an exemplary embodiment for providing precise distribution of a surfactant on template 18 to provide two regions: a surfactant rich region SRR and a surfactant depleted region SDR.
  • treatment of template 18, by contacting template 18 with surfactant (e.g., surfactant liquid 60) deposited on substrate 12, may provide control over distribution of surfactant liquid 60 to provide surfactant rich region SRR and surfactant depleted region SDR. Control of the distribution may further allow for control over the magnitude of the contact angle ⁇ SR R within the surfactant rich region SRR and the magnitude of the contact angle ⁇ SDR within the surfactant depleted region SDR.
  • contact angles ⁇ SRR and/or ⁇ S D R may be controlled to target different applications providing for ⁇ SRR > ⁇ SDR; ⁇ S RR ⁇ ⁇ S DR; and/or ⁇ S RR ⁇ S DR- [0026]
  • surface 62 of template 18 initially may be substantially free of surfactant liquid 60.
  • surface 62 of template 18 may be pre-treated.
  • surface 62 of template 18 may be pre-treated with the diluted spray-on surfactant/solvent solution described above.
  • imprint fluid 58 may be deposited on substrate 12.
  • Imprint fluid 58 may include, but is not limited to, polymerizable material 34 and surfactant liquid 60.
  • Polymerizable material 34 may be formed from several different families of bulk materials.
  • polymerizable material 34 may be fabricated from bulk materials including, but not limited to, vinyl ethers, methacrylates, epoxies, thiol-enes and acrylates, and/or the like. Bulk materials are described in further detail in U.S. Patent No.
  • the surfactant liquid 60 may migrate to the gas/liquid interface. As such, by positioning template 18 in contact with imprint fluid 58 as shown in FIG. 3B, at least a portion of surface 62 of template 18 may be treated with surfactant liquid 60.
  • surface 62 of template 18 may be defined by the surfactant rich region SRR and/or the surfactant depleted region SDR as illustrated in FIG. 3C.
  • the surfactant rich region SRR may include a layer of surfactant liquid 60 having a thickness t 3 .
  • the layer of surfactant liquid 60 may have a thickness t 3 of approximately 0.2 to 5 nnh.
  • the surfactant depleted region SDR may include a layer of surfactant liquid 60 having a thickness U- Generally, the thickness U of the surfactant depleted region SDR may be substantially reduced as compared to the thickness t 3 of the surfactant rich region SRR. For example, the thickness t* of the surfactant depleted region may be zero or near zero.
  • the contact angle ⁇ S RR at the surfactant rich region SRR and the contact angle ⁇ S DR at the surfactant depleted region SDR may be less than approximately 55°.
  • composition of surfactant liquid 60 may provide for different contact angles; surfactant liquid 60 may be selected to provide an approximate contact angle ⁇ S RR at the surfactant rich regions SRR and an approximate contact angle ⁇ S DR at the surfactant depleted regions SDR. As such, selection of surfactant liquid 60 may provide ⁇ SRR > ⁇ S D R , ⁇ SRR ⁇ ⁇ S D R , and/or ⁇ SRR ⁇ SDR , depending on the design considerations of an application.
  • Exemplary surfactant may include surfactant components such as fluoro-aliphatic polymeric esters, fluorosurfactants of polyoxyethlene, fluorosurfactants of polyalkyl ether, fluroalkyl polyethers, and/or the like. Exemplary surfactant components are further described in U.S. Patent No. 3,403,122, U.S. Patent No. 3,787,351 , U.S. Patent No. 4,803,145, U.S. Patent No. 4,835,084, U.S. Patent No. 4,845,008, U.S. Patent No. 5,280,644, U.S. Patent No. 5,747,234, U.S. Patent No. 6,664,354, and U.S. Patent Publication No. 2006/0175736, all of which are hereby incorporated by reference herein.
  • surfactant components such as fluoro-aliphatic polymeric esters, fluorosurfactants of polyoxyethlene, fluorosurfactants of polyalkyl ether,
  • Exemplary commercially available surfactant components include, but are not limited to, ZONYL ® FSO, ZONYL ® FSO-100, ZONYL ® FSN-100, and ZONYL ® FS-300, manufactured by E.I.
  • Selection of surfactant may be provided through contact angle analysis.
  • Contact angle analysis may include simulated testing of the contact angles on simulated surfactant rich regions SRR SIM and/or simulated surfactant depleted regions SDR SIM -
  • testing substrate 72 may be formed of material that is substantially similar to template 18.
  • testing substrate 72 may be formed of fused silica.
  • testing substrate 72 may be sized such that it is substantially similar to template 18 and/or sized to accommodate at least one simulated surfactant rich region SRRS IM - [0036]
  • Testing substrate 72 may be cleaned, baked dry, and stored in a nitrogen box. As illustrated in FIG. 4A, testing substrate 72 may be rinsed with a surfactant solution to provide film 74 having a thickness t 5 .
  • the surfactant solution may be a diluted surfactant solution.
  • the surfactant solution may be a solution formed of a percentage of weight of surfactant molecules in lsopropyl Alcohol (IPA).
  • IPA lsopropyl Alcohol
  • Surfactant molecules within the surfactant solution may be similar to surfactant molecules within surfactant liquid 60.
  • Film 74 of the surfactant solution on testing substrate 72 may be dried, and/or a substantial portion of film 74 may evaporate, reducing thickness t 5 as illustrated in FIG. 4B. For example, after evaporation, thickness t 5 may be substantially zero as IPA within the surfactant solution may be substantially evaporated.
  • drops of imprint fluid 58 may be deposited on testing substrate 72 to form the simulated surfactant rich region SRRS IM -
  • Each drop of imprint fluid 58 may have a volume V D -
  • the volume Vp of each drop may be approximately 5 ⁇ l_.
  • the volume V 0 may include polymerizable material 34 and surfactant liquid 60.
  • Surfactant liquid 60 may be comprised of similar surfactant molecules as compared to surfactant solution 74.
  • surfactant liquid 60 may be comprised of different surfactant molecules as compared to surfactant solution 74.
  • the contact angle of imprint fluid 58 on testing substrate 72 may be measured at multiple locations on testing substrate 72.
  • the contact angle of imprint fluid 58 may be measured at several locations (e.g., seven locations) using goniometer 70. The contact angles at multiple locations may be averaged to provide the magnitude of the contact angle ⁇ R - SIM on the simulated surfactant rich regions SRR SIM - [0039]
  • contact angle analysis on simulated surfactant depleted regions SDRS IM may be provided contact angle measurements of goniometer 70 on testing substrate 72a.
  • Testing substrate 72a may be formed of material that is substantially similar to template 18 and/or material that is substantially similar to testing substrate 72.
  • testing substrate 72a may be formed of fused silica.
  • testing substrate 72a may be sized such that it is substantially similar to template 18 and/or sized to accommodate at least one simulated surfactant depleted region SDRS IM - [0040] Similar to testing substrate 72 in FIG. 4, testing substrate 72a in
  • FIG. 5A may be cleaned, baked dry, and stored in a nitrogen box.
  • Testing substrate 72a may then be rinsed with a solvent (e.g., IPA) to provide film 78 having a thickness t 6 .
  • Film 78 of solvent on testing substrate 72a may be dried and/or at least a portion of film 78 of solvent may evaporate reducing thickness t 6 as illustrated in FIG. 5B.
  • thickness t 6 may be substantially zero after evaporation of a substantial portion of IPA.
  • drops of imprint fluid 58 may be deposited on testing substrate 72a to form the simulated surfactant depleted region SDR SIM -
  • Each drop of imprint fluid 58 may have a volume V D2 -
  • the volume V D 2 of each drop may be approximately 5 ⁇ l_.
  • the volume V D 2 may be substantially similar to the volume V 0 of drops on testing substrate 72 in FIG. 4.
  • the volume V D 2 of drops on testing substrate 72a in FIG. 5C may include polymerizable material 34 and surfactant liquid 60.
  • the contact angle of imprint fluid 58 on testing substrate 72a may be measured at multiple locations on testing substrate 72a.
  • the contact angle of imprint fluid 58 may be measured at several locations (e.g., seven locations) by goniometer 70. The contact angles at multiple locations may be averaged to provide the magnitude of the contact angle 0D-SIM on the simulated surfactant depleted regions SDR SIM -
  • Variations of surfactant liquid 60 within imprint fluid 58 deposited on testing substrate 72a may provide control over the contact angles within the simulated surfactant rich regions SRR SIM and/or the simulated surfactant depleted regions SDRS IM leading to control over the surfactant rich regions SRR and the surfactant depleted regions SDR during imprinting.
  • imprint fluid 58 formed of surfactant liquid 60 having approximately 0.5% R-08 and polymerizable material 34 may provide for ⁇ R - SIM of approximately 15° and 0D-SIM of approximately 22° such that ⁇ R-SIM ⁇ 0D-SIM-
  • imprint fluid 58 formed of surfactant liquid 60 having approximately 0.5% FS200 and polymerizable material 34 may provide for ⁇ R .
  • FIG. 6 illustrates a flow chart of exemplary method 300 for providing suitable wetting characteristics between template 18 and polymerizable material 34.
  • Suitable wetting characteristics may be created by controlling the contact angles ⁇ S RR and ⁇ S D R -
  • surfactant liquid 60 providing approximate the contact angles ⁇ R-SIM and ⁇ D- S IM may be selected such that ⁇ SRR > ⁇ SDR-
  • Application of surfactant liquid 60 on template 18 may then be controlled to provide the surfactant rich region SRR and the surfactant depleted region SDR on template 18.
  • the reduced contact angle ⁇ S D R in the surfactant depleted region SDR on template 18, as compared to the contact angle ⁇ S R R in the surfactant rich region SRR, may provide polymerizable material 34 an additional driving force to wet the surfactant depleted region SDR.
  • voids formed within patterned layer 46 may be significantly reduced during imprinting.
  • a step 302 multiple surfactant solutions 74 and/or multiple surfactant liquids 60 may be provided.
  • the contact angle ⁇ R . SIM in the simulated surfactant rich regions SRRS IM on testing substrate 72 rinsed with surfactant solution 74 may be determined for each surfactant liquid 60.
  • the contact angle ⁇ R-SI M may be determined by a reference document (e.g., a database) from prior testing using surfactant liquid 60 and surfactant solution 74.
  • the contact angle ⁇ D- SIM in the simulated surfactant depleted region SDR SIM on testing substrate 72a rinsed in solvent 78 may be determined for each surfactant liquid 60.
  • the contact angle ⁇ D-SIM may be determined by a reference document (e.g., database) from prior testing using surfactant liquid 60 and solvent 78.
  • surfactant liquid 60 suitable for imprinting may be determined.
  • surfactant liquid 60 that provides ⁇ SRR > ⁇ S DR may be selected.
  • imprint material 58 formed of polymerizable material 34 and surfactant liquid 60 may be deposited on substrate 12. It should be noted that surfactant liquid 60 may be applied directly to template 18 and need not be directly added to polymerizable material 34 prior to contact of template 18 with polymerizable material 34. Generally, surfactant liquid 60 in imprint fluid 58 may migrate towards the gas/liquid interface.
  • template 18 may contact imprint fluid 58 providing at least a portion of surfactant liquid 60 on surface 62 of template 18 to form at least one surfactant rich region SRR and at least one surfactant depleted region SDR.
  • the approximate contact angle ⁇ S RR provided within at least one surfactant rich region SRR during imprinting may be less than, greater than, or substantially similar to the approximate contact angle ⁇ S DR within at least one surfactant depleted region SDR during imprinting.
  • polymerizable material 34 may be solidified to provide patterned layer 46.
  • the surfactant rich region SRR on template 18 may provide two regions: the surfactant rich region SRR and the surfactant depleted region SDR.
  • the surfactant rich region SRR on template 18 is generally located at the point of contact between template 18 and imprint fluid 58.
  • surfactant liquid 60 within imprint fluid 58 may migrate to the gas/liquid interface as template 18 contacts imprint fluid 58 and imprint fluid 58 spreads on surface 44 of substrate 12.
  • surfactant liquid 60 may build up in localized regions on template 18 forming surfactant depleted regions SDR at drop locations 80 and surfactant rich regions SRR between drop locations 80.
  • the surfactant rich regions SRR between drop locations 80 generally form interstitial areas where voids may occur. [0047] Drop shifting may even out surfactant distribution on template 18.
  • FIG. 7B illustrates surfactant depleted regions SDR and surfactant rich regions SRR after a first drop pattern imprint.
  • a second drop pattern may be used that provides drop locations 80 at a shifted location as compared to the first drop pattern.
  • the shifted location of drops 80 in the subsequent drop pattern may be positioned such that at least one of drops 80 of imprint fluid 58 contacts template 18 at a surfactant rich region SRR.
  • drop shift patterning may be used successively or sporadically.
  • a first drop pattern may be used to imprint followed by one or more drop shifted patterns.
  • a first drop pattern may be used multiple times prior to one or more drop shifted patterns being used.
  • a first drop pattern may be used once followed by multiple uses of one or more drop shifted patterns.
  • the lower contact angle ⁇ S DR of the surfactant depleted region SDR may provide additional driving force for polymerizable material 34 to wet and fill the surfactant depleted region SDR.
  • FIG. 8 illustrates a flow chart of another exemplary method 400 for providing suitable wetting characteristics between a template and a polymerizable material using drop pattern shifting.
  • a step 402 multiple surfactant solutions 74 and/or multiple surfactant liquids 60 may be provided.
  • the contact angle ⁇ R -S IM in the simulated surfactant rich regions SRRsiM on testing substrate 72 rinsed with surfactant solution 74 may be determined for each surfactant liquid 60.
  • the contact angle ⁇ D- S IM in the simulated surfactant depleted region SDR SIM on testing substrate 72a rinsed in solvent 78 may be determined for each surfactant liquid 60.
  • surfactant liquid 60 that provides a suitable contact angle may be selected. For example, surfactant liquid 60 that provides contact angles ⁇ S RR > ⁇ SD R may be selected.
  • surfactant liquid 60 may be dispensed on substrate 12 in a first pattern.
  • surfactant liquid 60 in imprint fluid 58 may migrate towards the gas/liquid interface.
  • template 18 may contact imprint fluid 58.
  • imprint fluid 58 may be solidified to provide first patterned layer 46.
  • template 18 may be separated from first patterned layer 46 with template 18 having the surfactant rich regions SRR and the surfactant depleted regions SDR upon removal.
  • surfactant liquid 60 may be dispensed in a second drop pattern on second substrate 12.
  • the second drop pattern may be substantially similar to the first drop pattern and shifted a position x and/or a position y such that at least one drop location contacts at least one surfactant depleted region SDR of template 18.
  • template 18 may contact imprint fluid 58.
  • imprint fluid 58 may be solidified to provide second patterned layer 46.
  • the second patterned layer 46 may have limited or no voids.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
PCT/US2008/013827 2007-12-18 2008-12-18 Contact angle attenuations on multiple surfaces Ceased WO2009082458A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010539479A JP5020385B2 (ja) 2007-12-18 2008-12-18 複数表面上の接触角の低減
EP08865713A EP2227575A4 (en) 2007-12-18 2008-12-18 CONTACT ANGLE MITIGATION ON MULTIPLE SURFACES
CN2008801221593A CN101903159A (zh) 2007-12-18 2008-12-18 多重表面上的接触角衰减

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US1457407P 2007-12-18 2007-12-18
US61/014,574 2007-12-18
US12/336,821 US8142703B2 (en) 2005-10-05 2008-12-17 Imprint lithography method
US12/336,821 2008-12-17

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WO2009082458A2 true WO2009082458A2 (en) 2009-07-02
WO2009082458A3 WO2009082458A3 (en) 2009-12-30

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US (1) US8142703B2 (enExample)
EP (1) EP2227575A4 (enExample)
JP (1) JP5020385B2 (enExample)
KR (1) KR20100105659A (enExample)
CN (1) CN101903159A (enExample)
WO (1) WO2009082458A2 (enExample)

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US10883006B2 (en) 2016-03-31 2021-01-05 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
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JP5020385B2 (ja) 2012-09-05
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US8142703B2 (en) 2012-03-27

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