CN101859698A - 槽刻蚀及多晶硅注入工艺 - Google Patents
槽刻蚀及多晶硅注入工艺 Download PDFInfo
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- CN101859698A CN101859698A CN200910049074A CN200910049074A CN101859698A CN 101859698 A CN101859698 A CN 101859698A CN 200910049074 A CN200910049074 A CN 200910049074A CN 200910049074 A CN200910049074 A CN 200910049074A CN 101859698 A CN101859698 A CN 101859698A
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CN2009100490743A CN101859698B (zh) | 2009-04-09 | 2009-04-09 | 槽刻蚀及多晶硅注入工艺 |
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CN2009100490743A CN101859698B (zh) | 2009-04-09 | 2009-04-09 | 槽刻蚀及多晶硅注入工艺 |
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CN101859698A true CN101859698A (zh) | 2010-10-13 |
CN101859698B CN101859698B (zh) | 2012-03-14 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102259828A (zh) * | 2011-07-04 | 2011-11-30 | 上海先进半导体制造股份有限公司 | 与半导体工艺兼容的制造隔离腔体的方法及隔离腔体 |
CN102259830A (zh) * | 2011-07-04 | 2011-11-30 | 上海先进半导体制造股份有限公司 | 与半导体工艺兼容的制造隔离腔体的方法及隔离腔体 |
CN102320560A (zh) * | 2011-09-14 | 2012-01-18 | 上海先进半导体制造股份有限公司 | Mems器件的薄膜制造方法 |
CN109545739A (zh) * | 2018-11-15 | 2019-03-29 | 武汉新芯集成电路制造有限公司 | 一种导电结构的形成方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100474537C (zh) * | 2006-08-24 | 2009-04-01 | 上海华虹Nec电子有限公司 | 沟槽型mos晶体管的制造方法 |
CN101307488B (zh) * | 2007-05-15 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | 多晶硅薄膜的制备方法 |
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2009
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102259828A (zh) * | 2011-07-04 | 2011-11-30 | 上海先进半导体制造股份有限公司 | 与半导体工艺兼容的制造隔离腔体的方法及隔离腔体 |
CN102259830A (zh) * | 2011-07-04 | 2011-11-30 | 上海先进半导体制造股份有限公司 | 与半导体工艺兼容的制造隔离腔体的方法及隔离腔体 |
CN102259828B (zh) * | 2011-07-04 | 2014-01-01 | 上海先进半导体制造股份有限公司 | 与半导体工艺兼容的制造隔离腔体的方法及隔离腔体 |
CN102259830B (zh) * | 2011-07-04 | 2014-02-12 | 上海先进半导体制造股份有限公司 | 与半导体工艺兼容的制造隔离腔体的方法及隔离腔体 |
CN102320560A (zh) * | 2011-09-14 | 2012-01-18 | 上海先进半导体制造股份有限公司 | Mems器件的薄膜制造方法 |
CN109545739A (zh) * | 2018-11-15 | 2019-03-29 | 武汉新芯集成电路制造有限公司 | 一种导电结构的形成方法 |
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CN101859698B (zh) | 2012-03-14 |
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Address after: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee after: SHANGHAI ADVANCED SEMICONDUCTO Address before: 200233, 385 Rainbow Road, Shanghai Patentee before: ADVANCED SEMICONDUCTOR MANUFACTURING Co.,Ltd. |
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Effective date of registration: 20210423 Address after: 200120 No.600 Yunshui Road, Pudong New Area, Shanghai Patentee after: Shanghai Jita Semiconductor Co.,Ltd. Address before: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee before: SHANGHAI ADVANCED SEMICONDUCTO |