CN101853881B - 半导体装置以及半导体装置的制造方法 - Google Patents

半导体装置以及半导体装置的制造方法 Download PDF

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Publication number
CN101853881B
CN101853881B CN2010101454662A CN201010145466A CN101853881B CN 101853881 B CN101853881 B CN 101853881B CN 2010101454662 A CN2010101454662 A CN 2010101454662A CN 201010145466 A CN201010145466 A CN 201010145466A CN 101853881 B CN101853881 B CN 101853881B
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mentioned
recess
semiconductor layer
insulating barrier
nitride semiconductor
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Expired - Fee Related
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CN2010101454662A
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CN101853881A (zh
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金子信男
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
CN2010101454662A 2009-03-31 2010-03-23 半导体装置以及半导体装置的制造方法 Expired - Fee Related CN101853881B (zh)

Applications Claiming Priority (2)

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JP2009083944A JP5564815B2 (ja) 2009-03-31 2009-03-31 半導体装置及び半導体装置の製造方法
JP2009-083944 2009-03-31

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CN101853881B true CN101853881B (zh) 2012-07-25

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US (1) US8207574B2 (ja)
JP (1) JP5564815B2 (ja)
CN (1) CN101853881B (ja)
TW (1) TWI431770B (ja)

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WO2014127150A1 (en) * 2013-02-15 2014-08-21 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
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JP6386454B2 (ja) * 2013-06-06 2018-09-05 日本碍子株式会社 １３族窒化物複合基板、半導体素子、および１３族窒化物複合基板の製造方法
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US10910491B2 (en) 2013-09-10 2021-02-02 Delta Electronics, Inc. Semiconductor device having reduced capacitance between source and drain pads
US10665709B2 (en) 2013-09-10 2020-05-26 Delta Electronics, Inc. Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad
TWI577022B (zh) 2014-02-27 2017-04-01 台達電子工業股份有限公司 半導體裝置與應用其之半導體裝置封裝體
US10833185B2 (en) 2013-09-10 2020-11-10 Delta Electronics, Inc. Heterojunction semiconductor device having source and drain pads with improved current crowding
JP6240460B2 (ja) * 2013-10-02 2017-11-29 トランスフォーム・ジャパン株式会社 電界効果型化合物半導体装置及びその製造方法
US9530853B2 (en) * 2014-03-10 2016-12-27 Qorvo Us, Inc. Semiconductor device with reduced leakage current and method for making the same
JP6565376B2 (ja) * 2014-10-29 2019-08-28 サンケン電気株式会社 半導体装置
US10177061B2 (en) * 2015-02-12 2019-01-08 Infineon Technologies Austria Ag Semiconductor device
JP2016171259A (ja) * 2015-03-13 2016-09-23 株式会社東芝 半導体装置およびその製造方法
US10985259B2 (en) * 2018-12-07 2021-04-20 Gan Systems Inc. GaN HEMT device structure and method of fabrication
CN112531025B (zh) * 2019-09-17 2024-01-30 联华电子股份有限公司 高电子迁移率晶体管
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CN110808211A (zh) * 2019-11-08 2020-02-18 中国电子科技集团公司第十三研究所 斜型栅结构氧化镓场效应晶体管及其制备方法
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Publication number Publication date
JP2010238838A (ja) 2010-10-21
TWI431770B (zh) 2014-03-21
JP5564815B2 (ja) 2014-08-06
TW201036156A (en) 2010-10-01
CN101853881A (zh) 2010-10-06
US20100244018A1 (en) 2010-09-30
US8207574B2 (en) 2012-06-26

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