CN101809541A - 快闪存储器中的错误扫描 - Google Patents

快闪存储器中的错误扫描 Download PDF

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Publication number
CN101809541A
CN101809541A CN200880109070A CN200880109070A CN101809541A CN 101809541 A CN101809541 A CN 101809541A CN 200880109070 A CN200880109070 A CN 200880109070A CN 200880109070 A CN200880109070 A CN 200880109070A CN 101809541 A CN101809541 A CN 101809541A
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China
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information
storage arrangement
unit
mistake
scanning
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CN200880109070A
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English (en)
Chinese (zh)
Inventor
威廉·H·拉德克
彼得·S·菲利
西亚马克·内马齐
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Micron Technology Inc
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Micron Technology Inc
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Publication of CN101809541A publication Critical patent/CN101809541A/zh
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/006—Identification
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/106—Correcting systematically all correctable errors, i.e. scrubbing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
CN200880109070A 2007-08-22 2008-08-22 快闪存储器中的错误扫描 Pending CN101809541A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/843,466 US7770079B2 (en) 2007-08-22 2007-08-22 Error scanning in flash memory
US11/843,466 2007-08-22
PCT/US2008/010005 WO2009025857A1 (en) 2007-08-22 2008-08-22 Error scanning in flash memory

Publications (1)

Publication Number Publication Date
CN101809541A true CN101809541A (zh) 2010-08-18

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CN200880109070A Pending CN101809541A (zh) 2007-08-22 2008-08-22 快闪存储器中的错误扫描

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US (4) US7770079B2 (enExample)
EP (1) EP2198368B1 (enExample)
JP (2) JP2010537314A (enExample)
KR (2) KR20160065222A (enExample)
CN (1) CN101809541A (enExample)
TW (1) TWI397078B (enExample)
WO (1) WO2009025857A1 (enExample)

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CN102467976A (zh) * 2010-11-18 2012-05-23 格兰迪斯股份有限公司 存储器写入错误校正电路
CN104919434A (zh) * 2012-12-07 2015-09-16 西部数据技术公司 用于在固态驱动器中进行较低页数据恢复的系统和方法
CN110211624A (zh) * 2018-02-28 2019-09-06 东芝存储器株式会社 用于估计nand快闪存储器的位错误率的快闪存储器系统和方法
WO2022133787A1 (en) * 2020-12-23 2022-06-30 Micron Technology, Inc. Dynamic read disturb management algorithm for flash-based memory

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KR102499061B1 (ko) 2018-08-22 2023-02-13 삼성전자주식회사 상 변화 메모리 장치를 포함하는 반도체 메모리 장치 및 상 변화 메모리 장치를 액세스하는 방법
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102467976A (zh) * 2010-11-18 2012-05-23 格兰迪斯股份有限公司 存储器写入错误校正电路
CN102467976B (zh) * 2010-11-18 2017-08-04 三星半导体股份有限公司 存储器写入错误校正电路
CN104919434A (zh) * 2012-12-07 2015-09-16 西部数据技术公司 用于在固态驱动器中进行较低页数据恢复的系统和方法
US9952939B1 (en) 2012-12-07 2018-04-24 Western Digital Technologies, Inc. System and method for lower page data recovery in a solid state drive
CN104919434B (zh) * 2012-12-07 2018-11-06 西部数据技术公司 用于在固态驱动器中进行较低页数据恢复的系统和方法
CN110211624A (zh) * 2018-02-28 2019-09-06 东芝存储器株式会社 用于估计nand快闪存储器的位错误率的快闪存储器系统和方法
CN110211624B (zh) * 2018-02-28 2023-08-11 铠侠股份有限公司 用于估计nand快闪存储器的位错误率的快闪存储器系统和方法
WO2022133787A1 (en) * 2020-12-23 2022-06-30 Micron Technology, Inc. Dynamic read disturb management algorithm for flash-based memory

Also Published As

Publication number Publication date
US20090055697A1 (en) 2009-02-26
KR20100046265A (ko) 2010-05-06
US8356216B2 (en) 2013-01-15
JP5719902B2 (ja) 2015-05-20
US20120110399A1 (en) 2012-05-03
US20100313077A1 (en) 2010-12-09
WO2009025857A1 (en) 2009-02-26
KR20160065222A (ko) 2016-06-08
US8095835B2 (en) 2012-01-10
US20130132805A1 (en) 2013-05-23
KR101660049B1 (ko) 2016-09-26
JP2010537314A (ja) 2010-12-02
EP2198368A1 (en) 2010-06-23
EP2198368B1 (en) 2018-11-14
JP2014041644A (ja) 2014-03-06
TWI397078B (zh) 2013-05-21
TW200917263A (en) 2009-04-16
US7770079B2 (en) 2010-08-03
US8713385B2 (en) 2014-04-29

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