CN101809499B - 掩模坯体以及压印用模具的制造方法 - Google Patents
掩模坯体以及压印用模具的制造方法 Download PDFInfo
- Publication number
- CN101809499B CN101809499B CN2008801089180A CN200880108918A CN101809499B CN 101809499 B CN101809499 B CN 101809499B CN 2008801089180 A CN2008801089180 A CN 2008801089180A CN 200880108918 A CN200880108918 A CN 200880108918A CN 101809499 B CN101809499 B CN 101809499B
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- China
- Prior art keywords
- pattern
- film
- mask blank
- etching
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000007789 gas Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 40
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000460 chlorine Substances 0.000 claims abstract description 34
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 239000011737 fluorine Substances 0.000 claims abstract description 8
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 127
- 238000005530 etching Methods 0.000 claims description 60
- 238000012545 processing Methods 0.000 claims description 38
- 239000011651 chromium Substances 0.000 claims description 36
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 31
- 229910052804 chromium Inorganic materials 0.000 claims description 30
- QKQUUVZIDLJZIJ-UHFFFAOYSA-N hafnium tantalum Chemical compound [Hf].[Ta] QKQUUVZIDLJZIJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 239000004615 ingredient Substances 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 150000003482 tantalum compounds Chemical class 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- CKXUIPNJGOORAU-UHFFFAOYSA-N [Hf].[Zr].[Ta] Chemical compound [Hf].[Zr].[Ta] CKXUIPNJGOORAU-UHFFFAOYSA-N 0.000 claims 1
- QBXVTOWCLDDBIC-UHFFFAOYSA-N [Zr].[Ta] Chemical compound [Zr].[Ta] QBXVTOWCLDDBIC-UHFFFAOYSA-N 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 7
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000010023 transfer printing Methods 0.000 description 8
- 229910001029 Hf alloy Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 230000008676 import Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000003973 paint Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 229910004162 TaHf Inorganic materials 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004179 HfZr Inorganic materials 0.000 description 1
- -1 TaHf Chemical class 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- FWFGVMYFCODZRD-UHFFFAOYSA-N oxidanium;hydrogen sulfate Chemical compound O.OS(O)(=O)=O FWFGVMYFCODZRD-UHFFFAOYSA-N 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/009—Manufacturing the stamps or the moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-251244 | 2007-09-27 | ||
| JP2007251244 | 2007-09-27 | ||
| PCT/JP2008/067380 WO2009041551A1 (ja) | 2007-09-27 | 2008-09-26 | マスクブランク、及びインプリント用モールドの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101809499A CN101809499A (zh) | 2010-08-18 |
| CN101809499B true CN101809499B (zh) | 2012-10-10 |
Family
ID=40511431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008801089180A Expired - Fee Related CN101809499B (zh) | 2007-09-27 | 2008-09-26 | 掩模坯体以及压印用模具的制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8273505B2 (enExample) |
| JP (1) | JP5161017B2 (enExample) |
| KR (1) | KR101530732B1 (enExample) |
| CN (1) | CN101809499B (enExample) |
| TW (1) | TWI437358B (enExample) |
| WO (1) | WO2009041551A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009080421A (ja) * | 2007-09-27 | 2009-04-16 | Hoya Corp | マスクブランク、及びインプリント用モールドの製造方法 |
| JP5428513B2 (ja) * | 2009-05-14 | 2014-02-26 | 大日本印刷株式会社 | ナノインプリントモールド用基材の処理方法およびそれを用いたナノインプリントモールドの製造方法 |
| JP5658920B2 (ja) * | 2009-06-23 | 2015-01-28 | 富士フイルム株式会社 | 化学増幅型レジスト組成物、並びに、これを用いたモールドの作成方法、及び、レジスト膜 |
| JP2011073305A (ja) * | 2009-09-30 | 2011-04-14 | Hoya Corp | インプリント用モールドの製造方法 |
| JP2011096686A (ja) * | 2009-09-30 | 2011-05-12 | Hoya Corp | インプリント用モールドの製造方法、残存ハードマスク層除去前モールドおよびその製造方法、ならびにマスクブランクス |
| TWI494682B (zh) * | 2009-11-18 | 2015-08-01 | Hoya Corp | 基板之再生方法、光罩基底之製造方法、附多層反射膜基板之製造方法及反射型光罩基底之製造方法 |
| WO2011122605A1 (ja) * | 2010-03-30 | 2011-10-06 | Hoya株式会社 | インプリント用離型層付きモールド及びインプリント用離型層付きモールドの製造方法、コピーモールドの製造方法 |
| JP5798349B2 (ja) * | 2010-03-30 | 2015-10-21 | Hoya株式会社 | 離型層付きモールドおよびその製造方法ならびにモールドの製造方法 |
| JP5606826B2 (ja) * | 2010-08-24 | 2014-10-15 | Hoya株式会社 | インプリント用離型層、インプリント用離型層付きモールド及びインプリント用離型層付きモールドの製造方法 |
| JP5599213B2 (ja) * | 2010-03-30 | 2014-10-01 | Hoya株式会社 | モールドの製造方法 |
| JP5453616B2 (ja) * | 2010-04-16 | 2014-03-26 | Hoya株式会社 | インプリント用モールドの製造方法 |
| JP2012069687A (ja) * | 2010-09-22 | 2012-04-05 | Toshiba Corp | パターンの形成方法、電子デバイスの製造方法、および電子デバイス |
| JP5627990B2 (ja) * | 2010-10-25 | 2014-11-19 | Hoya株式会社 | インプリント用モールドの製造方法 |
| JP5945410B2 (ja) * | 2010-12-13 | 2016-07-05 | Hoya株式会社 | レジスト現像装置およびモールド製造方法 |
| JP6002528B2 (ja) * | 2011-09-28 | 2016-10-05 | Hoya株式会社 | マスクブランク用ガラス基板の製造方法、マスクブランクの製造方法及びマスクの製造方法、並びにインプリントモールドの製造方法 |
| US20140234468A1 (en) * | 2011-09-30 | 2014-08-21 | Hoya Corporation | Mold blank, master mold, method of manufacturing copy mold and mold blank |
| US9623590B2 (en) * | 2012-01-27 | 2017-04-18 | Asahi Kasei E-Materials Corporation | Fine concavo-convex structure product, heat-reactive resist material for dry etching, mold manufacturing method and mold |
| JP2013182962A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | テンプレートの製造方法 |
| JP5739376B2 (ja) * | 2012-05-16 | 2015-06-24 | 信越化学工業株式会社 | モールド作製用ブランクおよびモールドの製造方法 |
| JP5626613B2 (ja) * | 2013-12-12 | 2014-11-19 | Hoya株式会社 | インプリントモールド用マスクブランク |
| WO2016132816A1 (ja) * | 2015-02-19 | 2016-08-25 | 日本碍子株式会社 | 光学デバイスの製造方法 |
| US10156786B2 (en) | 2015-09-30 | 2018-12-18 | Thomas E. Seidel | Method and structure for nanoimprint lithography masks using optical film coatings |
| KR102624985B1 (ko) | 2016-07-26 | 2024-01-16 | 삼성전자주식회사 | 마스크 블랭크, 위상 시프트 마스크 및 그 제조방법 |
| TWI613506B (zh) * | 2017-01-04 | 2018-02-01 | 光罩的製作方式 | |
| US12085852B2 (en) * | 2021-12-27 | 2024-09-10 | Canon Kabushiki Kaisha | Template, method of forming a template, apparatus and method of manufacturing an article |
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| EP1498936A1 (en) * | 2002-04-11 | 2005-01-19 | Hoya Corporation | Reflection type mask blank and reflection type mask and production methods for them |
| CN1596385A (zh) * | 2001-11-27 | 2005-03-16 | Hoya株式会社 | 半色调型相移掩膜坯料、半色调型相移掩膜及其制造方法 |
| JP2005345737A (ja) * | 2004-06-02 | 2005-12-15 | Hoya Corp | マスクブランク、位相シフトマスクの製造方法及びテンプレートの製造方法 |
| WO2007074810A1 (ja) * | 2005-12-26 | 2007-07-05 | Hoya Corporation | マスクブランク及びフォトマスク |
| CN101010631A (zh) * | 2004-09-10 | 2007-08-01 | 信越化学工业株式会社 | 光掩模坯件、光掩膜及其制造方法 |
| JP2007241135A (ja) * | 2006-03-10 | 2007-09-20 | Toppan Printing Co Ltd | レベンソン型位相シフトマスク及びその製造方法 |
| JP2007241136A (ja) * | 2006-03-10 | 2007-09-20 | Toppan Printing Co Ltd | クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法 |
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2008
- 2008-09-26 JP JP2008249233A patent/JP5161017B2/ja not_active Expired - Fee Related
- 2008-09-26 TW TW097137085A patent/TWI437358B/zh not_active IP Right Cessation
- 2008-09-26 WO PCT/JP2008/067380 patent/WO2009041551A1/ja not_active Ceased
- 2008-09-26 KR KR1020107006422A patent/KR101530732B1/ko not_active Expired - Fee Related
- 2008-09-26 US US12/680,355 patent/US8273505B2/en not_active Expired - Fee Related
- 2008-09-26 CN CN2008801089180A patent/CN101809499B/zh not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1596385A (zh) * | 2001-11-27 | 2005-03-16 | Hoya株式会社 | 半色调型相移掩膜坯料、半色调型相移掩膜及其制造方法 |
| EP1498936A1 (en) * | 2002-04-11 | 2005-01-19 | Hoya Corporation | Reflection type mask blank and reflection type mask and production methods for them |
| JP2005345737A (ja) * | 2004-06-02 | 2005-12-15 | Hoya Corp | マスクブランク、位相シフトマスクの製造方法及びテンプレートの製造方法 |
| CN101010631A (zh) * | 2004-09-10 | 2007-08-01 | 信越化学工业株式会社 | 光掩模坯件、光掩膜及其制造方法 |
| WO2007074810A1 (ja) * | 2005-12-26 | 2007-07-05 | Hoya Corporation | マスクブランク及びフォトマスク |
| JP2007241135A (ja) * | 2006-03-10 | 2007-09-20 | Toppan Printing Co Ltd | レベンソン型位相シフトマスク及びその製造方法 |
| JP2007241136A (ja) * | 2006-03-10 | 2007-09-20 | Toppan Printing Co Ltd | クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101809499A (zh) | 2010-08-18 |
| JP2009098689A (ja) | 2009-05-07 |
| KR20100061505A (ko) | 2010-06-07 |
| JP5161017B2 (ja) | 2013-03-13 |
| WO2009041551A1 (ja) | 2009-04-02 |
| KR101530732B1 (ko) | 2015-06-22 |
| TW200923569A (en) | 2009-06-01 |
| US20100255411A1 (en) | 2010-10-07 |
| US8273505B2 (en) | 2012-09-25 |
| TWI437358B (zh) | 2014-05-11 |
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