CN101794793B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101794793B
CN101794793B CN201010107742.6A CN201010107742A CN101794793B CN 101794793 B CN101794793 B CN 101794793B CN 201010107742 A CN201010107742 A CN 201010107742A CN 101794793 B CN101794793 B CN 101794793B
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China
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voltage
low
misfet
terminal
region
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Expired - Fee Related
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CN201010107742.6A
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English (en)
Chinese (zh)
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CN101794793A (zh
Inventor
后藤聪
三宅智之
近藤将夫
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H10D84/0133—Manufacturing common source or drain regions between multiple IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83138—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different shapes or dimensions of their gate conductors

Landscapes

  • Transceivers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electronic Switches (AREA)
CN201010107742.6A 2009-01-29 2010-01-29 半导体器件 Expired - Fee Related CN101794793B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009017997A JP5237842B2 (ja) 2009-01-29 2009-01-29 半導体装置
JP2009-017997 2009-01-29

Publications (2)

Publication Number Publication Date
CN101794793A CN101794793A (zh) 2010-08-04
CN101794793B true CN101794793B (zh) 2014-03-19

Family

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Family Applications (1)

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CN201010107742.6A Expired - Fee Related CN101794793B (zh) 2009-01-29 2010-01-29 半导体器件

Country Status (3)

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US (2) US8244199B2 (https=)
JP (1) JP5237842B2 (https=)
CN (1) CN101794793B (https=)

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* Cited by examiner, † Cited by third party
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JP2011193191A (ja) * 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体集積回路およびそれを内蔵した高周波モジュール
JP5706103B2 (ja) * 2010-05-25 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
JP5648901B2 (ja) * 2010-08-31 2015-01-07 日立金属株式会社 高周波回路、高周波部品及び通信装置
JP5251953B2 (ja) * 2010-09-30 2013-07-31 株式会社村田製作所 スイッチ回路、半導体装置及び携帯無線機
JP5661448B2 (ja) * 2010-12-15 2015-01-28 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ
JP5735268B2 (ja) * 2010-12-20 2015-06-17 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波半導体スイッチ
JP5672098B2 (ja) * 2011-03-18 2015-02-18 富士通株式会社 無線端末装置
KR101215830B1 (ko) * 2011-03-24 2012-12-27 주식회사 실리콘웍스 Ｌｄｍｏｓ 소자를 이용한 스위치 회로
JP5763485B2 (ja) 2011-09-16 2015-08-12 ルネサスエレクトロニクス株式会社 アンテナスイッチ及び通信装置
CN103219365B (zh) * 2012-01-19 2016-06-22 三星电机株式会社 高频半导体开关
CN103219974B (zh) * 2012-01-19 2016-05-11 三星电机株式会社 高频开关
CN103219977B (zh) * 2012-01-19 2016-08-24 三星电机株式会社 高频半导体开关
CN103219975B (zh) * 2012-01-19 2016-10-19 三星电机株式会社 高频开关
CN103219566B (zh) * 2012-01-19 2016-08-03 三星电机株式会社 高频开关
US9035716B2 (en) 2012-01-20 2015-05-19 Samsung Electro-Mechanics Co., Ltd. High frequency switch
US9024838B2 (en) * 2012-08-09 2015-05-05 Qualcomm Incorporated Multi-throw antenna switch with off-state capacitance reduction
JP6024400B2 (ja) 2012-11-07 2016-11-16 ソニー株式会社 半導体装置、半導体装置の製造方法、及びアンテナスイッチモジュール
KR101963272B1 (ko) * 2014-03-05 2019-03-28 삼성전기주식회사 고주파 스위치
US9590611B2 (en) * 2014-04-10 2017-03-07 The United States Of America As Represented By The Secretary Of The Navy Radiation-hardened dual gate semiconductor transistor devices containing various improved structures including MOSFET gate and JFET gate structures and related methods
CN103986450B (zh) 2014-05-12 2017-04-12 华为技术有限公司 一种开关、天线的调谐器和射频装置
CN104883216B (zh) * 2015-02-17 2019-03-26 络达科技股份有限公司 可降低信号损失的天线切换装置
TWI547091B (zh) * 2015-02-17 2016-08-21 絡達科技股份有限公司 可降低訊號損失的天線切換裝置
KR102123600B1 (ko) 2015-05-29 2020-06-15 삼성전기주식회사 프론트 엔드 회로
JP6271605B2 (ja) 2016-01-12 2018-01-31 株式会社東芝 発振回路
CN105810647B (zh) * 2016-04-22 2018-11-06 宜确半导体（苏州）有限公司 射频开关集成模块及其集成方法、射频前端集成电路
JP6761374B2 (ja) 2017-05-25 2020-09-23 株式会社東芝 半導体装置
US10680605B2 (en) * 2018-02-28 2020-06-09 Infineon Technologies Ag Bias circuit and method for a high-voltage RF switch
WO2020245728A1 (ja) * 2019-06-07 2020-12-10 株式会社半導体エネルギー研究所 通信装置および電子機器
US11700028B2 (en) * 2020-02-26 2023-07-11 Dsp Group Ltd. Transmit receive radio frequency switch
JP7330146B2 (ja) * 2020-08-07 2023-08-21 株式会社東芝 スイッチ回路
CN113659932B (zh) * 2021-10-21 2021-12-24 成都明夷电子科技有限公司 一种高频高功率的soi射频收发开关
US11658657B1 (en) * 2022-02-08 2023-05-23 Infineon Technologies Ag Antenna tuning switch and system with a bypass function integrated in an RFIC
US12334960B2 (en) 2022-07-25 2025-06-17 Avago Technologies International Sales Pte. Limited Configurable radio frequency (RF) multiplexing switch for RF front end in 4G/5G applications

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CN1097910A (zh) * 1993-05-21 1995-01-25 索尼公司 无线接收—发射装置
US7123898B2 (en) * 2001-10-10 2006-10-17 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals

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JP2770846B2 (ja) * 1995-06-16 1998-07-02 日本電気株式会社 Ｆｅｔスイッチ回路
FR2742942B1 (fr) * 1995-12-26 1998-01-16 Sgs Thomson Microelectronics Generateur de creneaux de haute tension
US5777530A (en) * 1996-01-31 1998-07-07 Matsushita Electric Industrial Co., Ltd. Switch attenuator
JPH10242829A (ja) * 1997-02-24 1998-09-11 Sanyo Electric Co Ltd スイッチ回路装置
JP3711193B2 (ja) * 1998-01-16 2005-10-26 三菱電機株式会社 送受信切り換え回路
JP2006345398A (ja) * 2005-06-10 2006-12-21 Matsushita Electric Ind Co Ltd 高周波スイッチ回路及び高周波スイッチを用いた半導体装置
JP2008011503A (ja) * 2006-05-31 2008-01-17 Matsushita Electric Ind Co Ltd 高周波スイッチ回路、高周波スイッチ装置、及び送信モジュール装置
JP2008263523A (ja) * 2007-04-13 2008-10-30 Renesas Technology Corp 高周波スイッチ回路
US8093940B2 (en) * 2010-04-16 2012-01-10 Sige Semiconductor Inc. System and method of transistor switch biasing in a high power semiconductor switch

Patent Citations (3)

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CN1097910A (zh) * 1993-05-21 1995-01-25 索尼公司 无线接收—发射装置
US7123898B2 (en) * 2001-10-10 2006-10-17 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
EP2387094A1 (en) * 2001-10-10 2011-11-16 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals

Also Published As

Publication number Publication date
CN101794793A (zh) 2010-08-04
US8244199B2 (en) 2012-08-14
US8385876B2 (en) 2013-02-26
JP2010178026A (ja) 2010-08-12
US20120292703A1 (en) 2012-11-22
US20100188163A1 (en) 2010-07-29
JP5237842B2 (ja) 2013-07-17

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