JP5251953B2 - スイッチ回路、半導体装置及び携帯無線機 - Google Patents
スイッチ回路、半導体装置及び携帯無線機 Download PDFInfo
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- JP5251953B2 JP5251953B2 JP2010221097A JP2010221097A JP5251953B2 JP 5251953 B2 JP5251953 B2 JP 5251953B2 JP 2010221097 A JP2010221097 A JP 2010221097A JP 2010221097 A JP2010221097 A JP 2010221097A JP 5251953 B2 JP5251953 B2 JP 5251953B2
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- switch
- circuit
- antenna
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- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000003990 capacitor Substances 0.000 claims description 34
- 230000008859 change Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 description 84
- 238000010586 diagram Methods 0.000 description 31
- 238000000034 method Methods 0.000 description 10
- 230000000295 complement effect Effects 0.000 description 7
- 102000006463 Talin Human genes 0.000 description 6
- 108010083809 Talin Proteins 0.000 description 6
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
- H03K17/6221—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
Description
図2は、本発明の第1の実施の形態に関わるスイッチ回路の構成を表す回路図である。また、図3は、このスイッチ回路がアンテナ切り替え器中でどのように用いられるのかを表す概念図である。
次に、本発明の第2の実施の形態について説明する。
次に、本発明の第3の実施の形態について説明する。
次に、本発明の第4の実施の形態について説明する。
次に、本発明の第5の実施の形態について説明する。
最後に、本発明の第6の実施の形態について説明する。
C1…増加分容量、C2…容量、C3…容量、C4…容量、
Cg1、Cg2…接地容量、Ir、It、Ix…インバータ、
M1、M2.M3、M3a、M3b、M4、M4a、M4b…スイッチ、
PG…ワンショットパルス発生回路、Rb、Rc、Rr、Rt…抵抗、
11、12…3段増幅器、21、21c、22、22c…スイッチ、
23、24…LPF、30…バイアス電流及びアンテナ切り替え制御回路、
31、32…カプラ、100…バイアス回路、
111、112…2段増幅器、121、122…スイッチ回路、
131、132…カプラ、141、142…マッチング回路、
151、152…検波回路、161、162…バイアス回路、
171、172…マッチング回路。
Claims (6)
- アンテナを外部回路と接続するかを決定するスイッチ回路であって、
該スイッチ回路は、
前記外部回路の出力を前記アンテナに通す第1のスイッチと、電気的に前記第1のスイッチと前記外部回路との電気的接続の間に位置する容量を含み、前記第1のスイッチの制御信号の極性をインバータで反転して前記第1のスイッチと前記容量の間の接続点に接続し、
前記接続点と前記インバータの間に第1の抵抗を含み、
前記第1の抵抗と並列に接続する第2の抵抗及び抵抗開閉スイッチを含み、前記抵抗開閉スイッチを開閉することで前記インバータに接続される抵抗値を可変とするスイッチ回路。 - 請求項1記載のスイッチ回路において、更に前記第1のスイッチの制御信号が入力されるワンショットパルス発生回路を含み、
前記第1のスイッチの制御信号の変化をタイミングに、前記ワンショットパルス発生回路が所定の期間に前記抵抗開閉スイッチを開閉するスイッチ回路。 - 請求項1又は2記載のスイッチ回路において、前記第1のスイッチがN型FETを含んで構成され、前記制御信号が前記第1のスイッチを構成するN型FETのゲート端子に入力されるスイッチ回路。
- 請求項1又は2記載のスイッチ回路において、前記第1のスイッチがP型FETを含んで構成され、前記制御信号が前記第1のスイッチを構成するP型FETのゲート端子に入力されるスイッチ回路。
- 請求項1又は2記載のスイッチ回路を用いる半導体装置。
- 請求項5記載の半導体装置を用いる携帯無線機。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010221097A JP5251953B2 (ja) | 2010-09-30 | 2010-09-30 | スイッチ回路、半導体装置及び携帯無線機 |
US13/180,751 US8868008B2 (en) | 2010-09-30 | 2011-07-12 | Switch circuit for controlling a connection between an antenna and an external circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010221097A JP5251953B2 (ja) | 2010-09-30 | 2010-09-30 | スイッチ回路、半導体装置及び携帯無線機 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012080187A JP2012080187A (ja) | 2012-04-19 |
JP5251953B2 true JP5251953B2 (ja) | 2013-07-31 |
Family
ID=45889328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010221097A Expired - Fee Related JP5251953B2 (ja) | 2010-09-30 | 2010-09-30 | スイッチ回路、半導体装置及び携帯無線機 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8868008B2 (ja) |
JP (1) | JP5251953B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI482434B (zh) * | 2012-04-17 | 2015-04-21 | Realtek Semiconductor Corp | 切換式電容電路以及控制切換式電容電路的方法 |
US20150171860A1 (en) * | 2013-11-13 | 2015-06-18 | Skyworks Solutions, Inc. | Circuits and methods for improved quality factor in a stack of transistors |
KR101642584B1 (ko) | 2014-08-14 | 2016-07-25 | 삼성전기주식회사 | 고주파 스위치 회로 |
TWI771205B (zh) | 2016-09-26 | 2022-07-11 | 美商天工方案公司 | 用於射頻應用之主輔場效電晶體組態 |
KR102624466B1 (ko) | 2017-01-12 | 2024-01-15 | 삼성전자주식회사 | 다중 대역 안테나를 구비한 전자 장치 및 다중 대역 안테나를 구비한 전자 장치에서 스위칭 방법 |
US10389400B2 (en) * | 2017-11-07 | 2019-08-20 | Qorvo Us, Inc. | Radio frequency switch circuitry |
US10666313B2 (en) | 2017-11-07 | 2020-05-26 | Qorvo Us, Inc. | Radio frequency switch branch circuitry |
US10720707B2 (en) | 2017-11-08 | 2020-07-21 | Qorvo Us, Inc. | Reconfigurable patch antenna and phased array |
EP3930203B1 (en) | 2020-06-22 | 2024-01-31 | Infineon Technologies AG | Switch device, system and corresponding methods |
JPWO2022137799A1 (ja) * | 2020-12-23 | 2022-06-30 | ||
GB2607419B (en) * | 2021-03-31 | 2024-05-01 | Skyworks Solutions Inc | Radio frequency switch biasing topologies |
US11658657B1 (en) * | 2022-02-08 | 2023-05-23 | Infineon Technologies Ag | Antenna tuning switch and system with a bypass function integrated in an RFIC |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3243892B2 (ja) * | 1993-05-21 | 2002-01-07 | ソニー株式会社 | 信号切り替え用スイッチ |
JP3169775B2 (ja) * | 1994-08-29 | 2001-05-28 | 株式会社日立製作所 | 半導体回路、スイッチ及びそれを用いた通信機 |
JP3288209B2 (ja) * | 1994-12-16 | 2002-06-04 | 松下電器産業株式会社 | 半導体集積回路 |
JP3544351B2 (ja) * | 1999-11-26 | 2004-07-21 | 松下電器産業株式会社 | 高周波増幅回路およびそれを用いた移動体通信端末 |
JP3637830B2 (ja) * | 2000-02-22 | 2005-04-13 | 株式会社村田製作所 | Spdtスイッチおよびそれを用いた通信機 |
US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
US6882829B2 (en) * | 2002-04-02 | 2005-04-19 | Texas Instruments Incorporated | Integrated circuit incorporating RF antenna switch and power amplifier |
JP2004096441A (ja) * | 2002-08-30 | 2004-03-25 | Fujitsu Quantum Devices Ltd | スイッチング回路、スイッチングモジュール及びその制御方法 |
US7295814B2 (en) * | 2003-02-05 | 2007-11-13 | Hitachi Metals, Ltd. | Antenna switch circuit and antenna switch module |
JP2005136948A (ja) * | 2003-10-08 | 2005-05-26 | Renesas Technology Corp | アンテナスイッチ回路 |
US7345545B2 (en) * | 2005-03-28 | 2008-03-18 | Freescale Semiconductor, Inc. | Enhancement mode transceiver and switched gain amplifier integrated circuit |
JP2006332416A (ja) * | 2005-05-27 | 2006-12-07 | Nec Electronics Corp | 半導体装置 |
CN1980463B (zh) * | 2005-11-29 | 2010-04-21 | 华为技术有限公司 | 一种移动终端上下文的管理方法 |
JP2008011120A (ja) | 2006-06-28 | 2008-01-17 | Toshiba Corp | 半導体スイッチ回路 |
JP5151145B2 (ja) * | 2006-12-26 | 2013-02-27 | ソニー株式会社 | スイッチ回路、可変コンデンサ回路およびそのic |
US8103221B2 (en) * | 2008-05-30 | 2012-01-24 | National Ict Australia Limited | High-isolation transmit/receive switch on CMOS for millimeter-wave applications |
JP5237842B2 (ja) * | 2009-01-29 | 2013-07-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8451044B2 (en) * | 2009-06-29 | 2013-05-28 | Sige Semiconductor, Inc. | Switching circuit |
-
2010
- 2010-09-30 JP JP2010221097A patent/JP5251953B2/ja not_active Expired - Fee Related
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2011
- 2011-07-12 US US13/180,751 patent/US8868008B2/en active Active
Also Published As
Publication number | Publication date |
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US8868008B2 (en) | 2014-10-21 |
JP2012080187A (ja) | 2012-04-19 |
US20120081262A1 (en) | 2012-04-05 |
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